DISCRETE SEMICONDUCTORS DATA SHEET BLT92/SL UHF power transistor Product specification May 1989 Philips Semiconductors Product specification UHF power transistor DESCRIPTION NPN silicon planar epitaxial transistor primarily intended for use in handheld radio stations in the 900 MHz communications band. BLT92/SL QUICK REFERENCE DATA RF performance at Tmb = 25 °C in a common-emitter class-B circuit MODE OF OPERATION CW (class-B) VCE (V) f (MHz) PL (W) Gp (dB) ηC (%) 7.5 900 3.0 > 7.0 > 50 This device has been designed specifically for class-B operation. PIN CONFIGURATION FEATURES • internal input matching capacitor for a high power gain • gold metallization ensures excellent reliability handbook, halfpage The transistor has a 4-lead studless envelope with a ceramic cap (SOT122D). All leads are isolated from the mounting base. 4 1 3 PINNING 2 1 = collector MSB055 2 = emitter 3 = base Fig.1 Simplified outline, SOT122D. 4 = emitter PRODUCT SAFETY This device incorporates beryllium oxide (BeO), the dust of which is toxic. The device is entirely safe provided that the internal BeO disc is not damaged. May 1989 2 Philips Semiconductors Product specification UHF power transistor BLT92/SL RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (open emitter) VCBO max. 20 V Collector-emitter voltage (open base) VCEO max. 10 V Emitter-base voltage (open collector) VEBO max. 3.0 V DC or average IC; IC(AV) max. 1.2 A (peak value); f > 800 MHz ICM max. 3.6 A Ptot max. 10 W Collector current Total power dissipation at Tamb < 120 °C; f > 800 MHz Storage temperature range Tstg −65 to +150 °C Operating junction temperature Tj max. 200 °C THERMAL RESISTANCE Dissipation = 10 W; Tmb = 25 °C From junction to mounting base (f > 800 MHz) Rth j-mb(RF) max. MDA297 20 handbook, halfpage Ptot (W) 16 (1) 12 (2) 8 4 0 0 40 80 120 160 200 Tmb (°C) (1) Short-time RF operation during mismatch (f > 800 MHz). (2) Continuous RF operation (f > 800 MHz). Fig.2 Total power dissipation as a function of temperature. May 1989 3 6.0 K/W Philips Semiconductors Product specification UHF power transistor BLT92/SL CHARACTERISTICS Tj = 25 °C unless otherwise specified Collector-base breakdown voltage open emitter; IC = 10 mA V(BR)CBO > 20 V V(BR)CEO > 10 V V(BR)EBO > 3.0 V ICES < 5.0 mA ESBR > 1.0 mJ hFE > 25 Cc typ. 11 pF Cre typ. 6.0 pF Cc-mb typ. 1.2 pF Collector-emitter breakdown voltage open base; IC = 20 mA Emitter-base breakdown voltage open collector; IE = 2 mA Collector cut-off current VBE = 0; VCE = 10 V Second breakdown energy L = 25 mH; f = 50 Hz; RBE = 10 Ω DC current gain IC = 600 mA; VCE = 5 V Collector capacitance at f = 1 MHz IE = ie = 0; VCB = 7.5 V Feedback capacitance at f = 1 MHz IC = 0; VCE = 7.5 V Collector-mounting base capacitance MDA298 24 handbook, halfpage Cc (pF) 16 8 0 0 2 4 6 8 10 VCB (V) Fig.3 Collector capacitance as a function of collector-base voltage; f = 1 MHz; IE = ie = 0; typical values. May 1989 4 Philips Semiconductors Product specification UHF power transistor BLT92/SL APPLICATION INFORMATION RF performance in CW operation (common-emitter circuit; class-B); f = 900 MHz; Tmb = 25 °C MODE OF OPERATION Class-B; CW VCE (V) PL (W) 7.5 3.0 ηC (%) Gp (dB) > typ. > typ. 7.0 8.5 ,,,,,,,, ,,,,,,, ,,,,,,,, ,,,,,,, 50 57 handbook, full pagewidth 50 Ω C4 L2 L1 C1 C2 L3 D.U.T. C5 L5 L4 C3 C6 C9 L6 C7 L7 C8 C10 C13 C14 C11 L8 L10 R1 L9 C12 R2 +VCC MDA299 Fig.4 Class-B test circuit at f = 900 MHz. List of components: C1 = C2 = C8 = C10 = 1.4 to 5.5 pF film dielectric trimmer (cat. no. 2222 809 09001) C3 = C6 = C7 = 3.3 pF multilayer ceramic chip capacitor(1) C4 = C5 = C9 = 5.6 pF multilayer ceramic chip capacitor(1) C11 = C12 = C13 = 180 pF multilayer ceramic chip capacitor C14 = 1 µF (35 V) tantalum capacitor L1 = 50 Ω stripline (25 mm × 2.4 mm) L2 = 50 Ω stripline (11 mm × 2.4 mm) L3 = L4 = 25 Ω stripline (11.5 mm × 6.0 mm) L5 = 50 Ω stripline (7.0 mm × 2.4 mm) L6 = 50 Ω stripline (27.0 mm × 2.4 mm) L7 = 4 turns closely wound enamelled Cu wire (0.4 mm), int. dia;. 3 mm, with ferrite beat (cat. no. 4330 830 32221) over the coldside lead L8 = 1 turn Cu wire (1.0 mm); int. dia. 5.5 mm; length 2 mm; leads 2 × 5 mm L9 = L10 = Ferroxcube wideband HF choke, grade 3B (cat. no. 4312 020 36642) R1 = R2 = 10 Ω ± 5%; 0.25 W metal film resistor The striplines on a double Cu-clad printed circuit board with PTFE fibreglass dielectric (εr = 2.2); thickness 1/32 inch; thickness of copper-sheet 2 × 35 µm. Note 1. American Technical Ceramics capacitor type 100 A or capacitor of same quality. May 1989 5 50 Ω Philips Semiconductors Product specification UHF power transistor BLT92/SL 135 mm handbook, full pagewidth 70 mm +VCC L8 L5 C8 R2 C7 R1 C1 C2 L1 C4 L2 C6 L4 L7 C13 C10 C11 C14 L3 C3 L9 L6 C5 L10 C9 C12 MDA300 Fig.5 Printed circuit board and component layout for 900 MHz class-B test circuit. Note: The circuit and the components are on one side of the PTFE fibreglass board; the other side is un-etched copper serving as groundplane. Earth connections are made by hollow rivets and also by fixing-screws and copper straps around the board and under the emitters to provide a direct contact between the copper on the component side and the groundplane. May 1989 6 Philips Semiconductors Product specification UHF power transistor BLT92/SL MDA301 5 MDA302 10 Gp handbook, halfpage handbook, halfpage PL (W) 4 Gp 100 ηC (%) (dB) 8 80 Gp ηC 3 6 2 4 40 1 2 20 0 0 0.4 0.8 PS (W) 60 ηC 0 1.2 0 0 1 2 3 4 5 PL (W) f = 900 MHz; Tmb = 25 °C; class-B operation; typical values. VCE = 7.5 V − − − VCE = 5.0 V f = 900 MHz; Tmb = 25 °C; class-B operation; typical values. VCE = 7.5 V − − − VCE = 5.0 V Fig.6 Fig.7 Load power as a function of source power. RUGGEDNESS The device is capable of withstanding a full load mismatch (VSWR = 50; all phases) at rated load power up to a supply voltage of 9.0 V at Tmb = 25 °C. May 1989 7 Power gain and efficiency as a function of load power. Philips Semiconductors Product specification UHF power transistor BLT92/SL MDA303 10 MDA304 5 handbook, halfpage handbook, halfpage Zi (Ω) ZL (Ω) 4 xi 8 RL ri 6 3 4 2 XL 2 1 0 750 800 850 900 0 750 950 1000 f (MHz) 800 850 900 950 1000 f (MHz) VCE = 7,5 V; PL = 3 W; f = 800 - 960 MHz; Tmb = 25 °C; class-B operation; typical values. VCE = 7,5 V; PL = 3 W; f = 800 - 960 MHz; Tmb = 25 °C; class-B operation; typical values. Fig.8 Fig.9 Input impedance as a function of frequency (series components). MDA305 10 handbook, halfpage Gp (dB) 8 6 4 2 0 750 800 850 900 950 1000 f (MHz) VCE = 7,5 V; PL = 3 W; f = 800 - 960 MHz; Tmb = 25 °C; class-B operation; typical values. Fig.10 Power gain as a function of frequency. May 1989 8 Load impedance as a function of frequency (series components). Philips Semiconductors Product specification UHF power transistor BLT92/SL PACKAGE OUTLINE Studless ceramic package; 4 leads SOT122D D A Q c D2 H b α 4 L 3 H 1 2 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D2 H L Q α mm 4.17 3.27 5.85 5.58 0.18 0.14 7.50 7.23 7.24 6.98 27.56 25.78 9.91 9.14 1.58 1.27 90° OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-04-18 SOT122D May 1989 EUROPEAN PROJECTION 9 Philips Semiconductors Product specification UHF power transistor BLT92/SL DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. May 1989 10