NCV8406A, NCV8406B Self-Protected Low Side Driver with Temperature and Current Limit 65 V, 7.0 A, Single N−Channel www.onsemi.com NCV8406A/B is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and integrated Drain-to-Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh automotive environments. VDSS (Clamped) RDS(on) TYP ID TYP (Limited) 65 V 210 mW 7.0 A Features • • • • • • • • • • Drain Short Circuit Protection Thermal Shutdown with Automatic Restart Over Voltage Protection Integrated Clamp for Inductive Switching ESD Protection dV/dt Robustness Analog Drive Capability (Logic Level Input) These Devices are Faster than the Rest of the NCV Devices NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Overvoltage Protection Gate Input ESD Protection Temperature Limit Current Limit Source MARKING DIAGRAM 4 Typical Applications • Switch a Variety of Resistive, Inductive and Capacitive Loads • Can Replace Electromechanical Relays and Discrete Circuits • Automotive / Industrial Current Sense 1 2 DRAIN 4 3 SOT−223 CASE 318E STYLE 3 4 1 2 3 AYW xxxxxG G 1 2 3 SOURCE GATE DRAIN YWW xxxxxG DPAK CASE 369C A = Assembly Location Y = Year W, WW = Work Week xxxxx = 8406A or 8406B G or G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 10 of this data sheet. © Semiconductor Components Industries, LLC, 2017 March, 2017 − Rev. 6 1 Publication Order Number: NCV8406/D NCV8406A, NCV8406B MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Internally Clamped VDSS 60 Vdc Gate−to−Source Voltage VGS "14 Vdc Drain Current Continuous ID Total Power Dissipation − SOT−223 Version @ TA = 25°C (Note 1) @ TA = 25°C (Note 2) PD Total Power Dissipation − DPAK Version @ TA = 25°C (Note 1) @ TA = 25°C (Note 2) PD Internally Limited W 1.25 1.81 W 1.31 2.31 °C/W Thermal Resistance − SOT−223 Version Junction−to−Soldering Point Junction−to−Ambient (Note 1) Junction−to−Ambient (Note 2) RqJS RqJA RqJA 7.0 100 69 Thermal Resistance − DPAK Version Junction−to−Soldering Point Junction−to−Ambient (Note 1) Junction−to−Ambient (Note 2) RqJS RqJA RqJA 1.0 95 54 Single Pulse Inductive Load Switching Energy (Starting TJ = 25°C, VDD = 50 Vdc, VGS = 5.0 Vdc, IL = 2.1 Apk, L = 50 mH, RG = 25 W) EAS 110 mJ Load Dump Voltage (VGS = 0 and 10 V, RI = 2 W, RL = 7 W, td = 400 ms) VLD 75 V Operating Junction Temperature Range TJ −40 to 150 °C Storage Temperature Range Tstg −55 to 150 °C °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface mounted onto minimum pad size (100 sq/mm) FR4 PCB, 1 oz cu. 2. Mounted onto 1″ square pad size (700 sq/mm) FR4 PCB, 1 oz cu. + ID DRAIN IG + VDS GATE SOURCE VGS − − Figure 1. Voltage and Current Convention www.onsemi.com 2 NCV8406A, NCV8406B MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 60 65 70 V − 22 100 − 30 100 1.2 − 1.66 4.0 2.0 − − 185 210 − − 210 445 240 520 − 0.9 1.1 OFF CHARACTERISTICS V(BR)DSS Drain−to−Source Clamped Breakdown Voltage (VGS = 0 V, ID = 2 mA) Zero Gate Voltage Drain Current (VDS = 52 V, VGS = 0 V) IDSS Gate Input Current (VGS = 5.0 V, VDS = 0 V) IGSS mA mA ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = 150 mA) Threshold Temperature Coefficient VGS(th) Static Drain−to−Source On−Resistance (Note 3) (VGS = 10 V, ID = 2.0 A, TJ @ 25°C) RDS(on) Static Drain−to−Source On−Resistance (Note 3) (VGS = 5.0 V, ID = 2.0 A, TJ @ 25°C) (VGS = 5.0 V, ID = 2.0 A, TJ @ 150°C) RDS(on) Source−Drain Forward On Voltage (IS = 7.0 A, VGS = 0 V) V −mV/°C mW mW VSD V SWITCHING CHARACTERISTICS (Note 6) Turn−on Delay Time RL = 6.6 W, Vin = 0 to 10 V, VDD = 13.8 V, ID = 2.0 A, 10% Vin to 10% ID td(on) − 127 − ns Turn−on Rise Time RL = 6.6 W, Vin = 0 to 10 V, VDD = 13.8 V, ID = 2.0 A, 10% ID to 90% ID trise − 486 − ns Turn−off Delay Time RL = 6.6 W, Vin = 0 to 10 V, VDD = 13.8 V, ID = 2.0 A, 90% Vin to 90% ID td(off) − 1600 − ns Turn−off Fall Time RL = 6.6 W, Vin = 0 to 10 V, VDD = 13.8 V, ID = 2.0 A, 90% ID to 10% ID tfall − 692 − ns Slew Rate ON RL = 6.6 W, Vin = 0 to 10 V, VDD = 13.8 V, ID = 2.0 A, 70% to 50% VDD dVDS/dTon − 79 − V/ms Slew Rate OFF RL = 6.6 W, Vin = 0 to 10 V, VDD = 13.8 V, ID = 2.0 A, 50% to 70% VDD dVDS/dToff − 27 − V/ms VDS = 10 V, VGS = 5.0 V, TJ = 25°C (Note 5) VDS = 10 V, VGS = 5.0 V, TJ = 150°C (Notes 5, 6) VDS = 10 V, VGS = 10 V, TJ = 25°C (Notes 5) ILIM 5.0 3.5 6.5 7.0 4.5 8.5 9.5 6.0 10.5 A VGS = 5.0 V (Note 6) TLIM(off) 150 180 200 °C SELF PROTECTION CHARACTERISTICS (Note 4) Current Limit Temperature Limit (Turn−off) VGS = 5.0 V DTLIM(on) − 10 − °C VGS = 10 V (Note 6) TLIM(off) 150 180 200 °C Thermal Hysteresis VGS = 10 V DTLIM(on) − 20 − °C Input Current during Thermal Fault VDS = 0 V, VGS = 5.0 V, TJ = TJ > T(fault) (Note 6) VDS = 0 V, VGS = 10 V, TJ = TJ > T(fault) (Note 6) Ig(fault) − − 5.9 12.3 − mA 6000 500 − − − − Thermal Hysteresis Temperature Limit (Turn−off) ESD ELECTRICAL CHARACTERISTICS ESD Electro−Static Discharge Capability Human Body Model (HBM) Machine Model (MM) V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Fault conditions are viewed as beyond the normal operating range of the part. 5. Current limit measured at 380 ms after gate pulse. 6. Not subject to production test. www.onsemi.com 3 NCV8406A, NCV8406B TYPICAL PERFORMANCE CURVES Emax (mJ) 1000 ILmax (A) 10 TJstart = 25°C TJstart = 25°C 100 TJstart = 150°C TJstart = 150°C 10 1 10 10 100 L (mH) L (mH) Figure 2. Single Pulse Maximum Switch−off Current vs. Load Inductance Figure 3. Single−Pulse Maximum Switching Energy vs. Load Inductance 1000 Emax (mJ) ILmax (A) 10 TJstart = 25°C 1 TJstart = 150°C TJstart = 25°C 100 TJstart = 150°C 10 0.1 1 1 10 10 TIME IN CLAMP (ms) TIME IN CLAMP (ms) Figure 4. Single Pulse Maximum Inductive Switch−off Current vs. Time in Clamp Figure 5. Single−Pulse Maximum Inductive Switching Energy vs. Time in Clamp 6V 12 7V 8V 9V 12 −40°C 10 V VDS = 10 V 10 25°C 9 100°C ID (A) 5V 8 ID (A) 100 4V Ta = 25°C 6 6 150°C 3.3 V 4 3V 3 2 VGS = 2.5 V 0 0 0 5 10 0 15 1 2 3 4 VDS (V) VGS (V) Figure 6. On−state Output Characteristics Figure 7. Transfer Characteristics www.onsemi.com 4 5 NCV8406A, NCV8406B TYPICAL PERFORMANCE CURVES 500 600 ID = 2 A ID = 0.5 A 550 150°C, VGS = 10 V 400 450 150°C RDS(on) (mW) RDS(on) (mW) 500 400 350 100°C 300 250 200 150 100 100°C, VGS = 5 V 350 300 100°C, VGS = 10 V 250 25°C, VGS = 5 V 200 25°C 150 −40°C 100 25°C, VGS = 10 V −40°C, VGS = 5 V −40°C, VGS = 10 V 50 3 4 5 6 7 8 9 0.5 0.75 10 1 1.25 1.5 1.75 2 2.25 2.5 2.75 VGS (V) ID (A) Figure 8. RDS(on) vs. Gate−Source Voltage Figure 9. RDS(on) vs. Drain Current 3 15 2.5 ID = 2 A VGS = 10 V 2.0 VGS = 5 V ILIM (A) NORMALIZED RDS(on) 150°C, VGS = 5 V 450 1.5 13 −40°C 11 25°C 9 100°C 7 1.0 150°C 5 VDS = 10 V 0.5 −40 −20 3 0 20 40 60 80 100 120 4 140 5 6 7 8 9 T (°C) VGS (V) Figure 10. Normalized RDS(on) vs. Temperature Figure 11. Current Limit vs. Gate−Source Voltage 15 10 1000 VGS = 10 V VDS = 10 V 100 13 11 IDSS (mA) ILIM (A) 10 VGS = 5 V 9 150°C 1 100°C 0.1 0.01 25°C VGS = 0 V 7 0.001 −40°C 5 −40 −20 0.0001 0 20 40 60 80 100 120 140 10 20 30 40 50 60 TJ (°C) VDS (V) Figure 12. Current Limit vs. Junction Temperature Figure 13. Drain−to−Source Leakage Current www.onsemi.com 5 70 NCV8406A, NCV8406B TYPICAL PERFORMANCE CURVES 1100 ID = 150 mA VDS = VGS 1.1 1000 −40°C 900 1.0 VSD (mV) NORMALIZED VGS(th) (V) 1.2 0.9 25°C 800 100°C 0.8 700 0.7 600 0.6 −40 −20 500 150°C VGS = 0 V 0 20 40 80 60 100 120 140 1 3 4 5 6 7 8 9 T (°C) IS (A) Figure 14. Normalized Threshold Voltage vs. Temperature Figure 15. Source−Drain Diode Forward Characteristics 1600 3400 VDD = 13.8 V ID = 2 A RG = 0 W 1400 1200 td(off) 10 td(off), VGS = 10 V 3000 2600 2200 800 TIME (ns) 1000 tf 600 tr td(off), VGS = 5 V tf, VGS = 10 V 1400 tf, VGS = 5 V tr, VGS = 10 V 1000 600 td(on) 200 td(on), VGS = 5 V 200 0 tr, VGS = 5 V 1800 400 td(on), VGS = 10 V −200 3 4 5 6 7 8 9 10 0 500 1000 1500 2000 VGS (V) RG (W) Figure 16. Resistive Load Switching Time vs. Gate−Source Voltage Figure 17. Resistive Load Switching Time vs. Gate Resistance DRAIN−SOURCE VOLTAGE SLOPE (V/ms) TIME (ns) 2 35 30 25 dVDS/dt(off), VGS = 5 V 20 dVDS/dt(off), VGS = 10 V 15 10 5 0 500 1000 1500 2000 RG (W) Figure 18. Drain−Source Voltage Slope during Turn On and Turn Off vs. Gate Resistance www.onsemi.com 6 NCV8406A, NCV8406B TYPICAL PERFORMANCE CURVES 110 110 100 100 90 PCB Cu thickness, 1.0 oz RqJA (°C/W) RqJA (°C/W) 90 80 70 PCB Cu thickness, 2.0 oz 60 80 70 PCB Cu thickness, 1.0 oz 60 50 50 40 40 PCB Cu thickness, 2.0 oz 100 200 300 400 500 600 100 200 300 400 500 COPPER HEAT SPREADER AREA (mm2) COPPER HEAT SPREADER AREA (mm2) Figure 19. RqJA vs. Copper Area − SOT−223 Figure 20. RqJA vs. Copper Area − DPAK 600 1000 R(t) (°C/W) 100 50% Duty Cycle 20% 10% 10 5% 2% 1 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10 100 1000 PULSE TIME (sec) Figure 21. Transient Thermal Resistance − SOT−223 Version 100 50% Duty Cycle R(t) (°C/W) 10 20% 10% 5% 2% 1 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 PULSE TIME (sec) Figure 22. Transient Thermal Resistance − DPAK Version www.onsemi.com 7 NCV8406A, NCV8406B TEST CIRCUITS AND WAVEFORMS RL VIN + D RG VDD G DUT − S IDS Figure 23. Resistive Load Switching Test Circuit 90% 10% VIN td(ON) tr td(OFF) tf 90% 10% IDS Figure 24. Resistive Load Switching Waveforms www.onsemi.com 8 NCV8406A, NCV8406B TEST CIRCUITS AND WAVEFORMS L VDS VIN D RG + VDD G DUT − S tp IDS Figure 25. Inductive Load Switching Test Circuit 5V VIN 0V Tav Tp V(BR)DSS Ipk VDD VDS VDS(on) IDS 0 Figure 26. Inductive Load Switching Waveforms www.onsemi.com 9 NCV8406A, NCV8406B ORDERING INFORMATION Package Shipping† NCV8406ASTT1G SOT−223 (Pb−Free) 1000 / Tape & Reel NCV8406ASTT3G SOT−223 (Pb−Free) 4000 / Tape & Reel NCV8406ADTRKG DPAK (Pb−Free) 2500 / Tape & Reel NCV8406BDTRKG DPAK (Pb−Free) 2500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 10 NCV8406A, NCV8406B PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE N D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 4 HE E 1 2 3 b e1 e 0.08 (0003) A1 C q A DIM A A1 b b1 c D E e e1 L L1 HE MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 0.20 1.50 6.70 0° q L STYLE 3: PIN 1. 2. 3. 4. L1 MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 −−− −−− 1.75 2.00 7.00 7.30 − 10° GATE DRAIN SOURCE DRAIN SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 11 MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.008 0.060 0.264 0° INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 −−− 0.069 0.276 − MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 −−− 0.078 0.287 10° NCV8406A, NCV8406B PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. A E C A b3 B c2 4 L3 Z D 1 2 H DETAIL A 3 L4 NOTE 7 c SIDE VIEW b2 e b TOP VIEW 0.005 (0.13) M C Z H L2 GAUGE PLANE C L L1 DETAIL A DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z BOTTOM VIEW Z SEATING PLANE BOTTOM VIEW A1 ALTERNATE CONSTRUCTIONS ROTATED 905 CW 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− 6.17 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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