DinTek DTM4964 N-channel 60-v (d-s) mosfet Datasheet

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N-Channel 60-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
60
RDS(on) (Ω)
ID (A)d
0.036 at VGS = 10 V
8
0.043 at VGS = 4.5 V
8
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Optimized for “Low Side” Synchronous
Rectifier Operation
• 100 % Rg and UIS Tested
Qg (Typ.)
10.5 nC
APPLICATIONS
D
• CCFL Inverter
SO-8
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
G
S
Top View
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
TC = 25 °C
TA = 25 °C
IS
Avalanche Current
Single-Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
2.1b, c
15
11.2
5
3.2
2.5b, c
1.6b, c
- 55 to 150
TJ, Tstg
Operating Junction and Storage Temperature Range
Unit
V
8a
6.8
6.1b, c
4.8b, c
25
4.2
IDM
Pulsed Drain Current
Continuous Source-Drain Diode Current
Limit
60
± 20
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Symbol
RthJA
RthJF
Typical
38
20
Maximum
50
25
Unit
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
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SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
60
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
V
55
mV/°C
- 6.3
1.5
2.5
V
± 100
nA
VDS = 60 V, VGS = 0 V
1
VDS = 60 V, VGS = 0 V, TJ = 55 °C
10
VDS ≥ 5 V, VGS = 10 V
VGS = 10 V, ID = 4.6 A
25
A
0.030
0.036
VGS = 4.5 V, ID = 4.2 A
0.035
0.043
VDS = 15 V, ID = 4.6 A
20
1100
VDS = 30 V, VGS = 0 V, f = 1 MHz
90
pF
55
VDS = 30 V, VGS = 10 V, ID = 4.6 A
21
32
10.5
16
3.5
f = 1 MHz
3.3
5
20
30
150
225
20
30
tf
60
90
td(on)
10
15
tr
td(off)
nC
4.2
td(on)
tr
Ω
S
VDS = 30 V, VGS = 4.5 V, ID = 4.6 A
td(off)
µA
VDD = 30 V, RL = 5.4 Ω
ID ≅ 5.6 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 30 V, RL = 5.4 Ω
ID ≅ 5.6 A, VGEN = 10 V, Rg = 1 Ω
tf
15
25
25
40
10
15
Ω
ns
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
IS
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
4.2
TC = 25 °C
25
IS = 2 A
IF = 5.5 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.8
1.2
V
25
50
ns
25
50
nC
19
6
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
5
25
VGS = 10 V thru 4 V
TC = – 55 °C
4
ID - Drain Current (A)
ID - Drain Current (A)
20
15
10
VGS = 3 V
5
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID = 25 °C
3
ID = 125 °C
2
1
0
0.0
2.0
0.5
VDS - Drain-to-Source Voltage (V)
1.5
2.0
2.5
3.0
3.5
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.040
1500
1200
Ciss
VGS = 4.5 V
0.036
0.032
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
1.0
VGS = 10 V
900
600
0.028
300
Coss
0.024
Crss
0
0
5
10
15
20
25
0
10
ID - Drain Current (A)
20
40
50
60
VDS - Drain-to-Source Voltage (V)
Capacitance
On-Resistance vs. Drain Current
2.0
10
ID = 4.6 A
1.8
8
VDS = 30 V
6
VDS = 48 V
4
VGS = 10 V,
ID = 4.6 A
1.6
(Normalized)
RDS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
30
1.4
1.2
1.0
2
0.8
0
0
5
10
15
20
25
0.6
- 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
150
3
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
RDS(on) - Drain-to-Source On-Resistance (Ω)
0.08
IS - Source Current (A)
TJ = 150 °C
10
TJ = 25 °C
1
0.0
ID = 4.6 A
0.07
0.06
125 °C
0.05
0.04
0.03
25 °C
0.02
0.2
0.4
0.6
0.8
1.0
1.2
0
2
VSD - Source-to-Drain Voltage (V)
4
6
8
10
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
2.6
50
2.4
ID = 250 µA
40
2.0
30
Power (W)
VGS(th) (V)
2.2
1.8
1.6
20
1.4
10
1.2
1.0
- 50
- 25
0
25
50
75
100
125
0
10-3
150
10-2
100
Limited by RDS(on)*
ID - Drain Current (A)
10
100 µs
1 ms
1
10 ms
100 ms
TA = 25 °C
Single Pulse
1s
10 s
BVDSS Limited
DC
10
100
0.01
1
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which R DS(on) is specified
Safe Operating Area
4
10
100
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
0.1
1
Time (s)
TJ - Temperature (°C)
0.1
10-1
600
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
12
5
4
Power (W)
ID - Drain Current (A)
9
Package Limited
6
3
2
3
1
0
0
0
25
50
75
100
125
150
25
50
75
100
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating*
Power, Junction-to-Foot
125
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
5
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 70 C/W
0.02
Single Pulse
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
6
1
10
Package Information
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
DIM
Min
INCHES
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
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Application Note
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
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1
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
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