DT. www.daysemi.jp N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A)d 0.036 at VGS = 10 V 8 0.043 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Optimized for “Low Side” Synchronous Rectifier Operation • 100 % Rg and UIS Tested Qg (Typ.) 10.5 nC APPLICATIONS D • CCFL Inverter SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID TC = 25 °C TA = 25 °C IS Avalanche Current Single-Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD 2.1b, c 15 11.2 5 3.2 2.5b, c 1.6b, c - 55 to 150 TJ, Tstg Operating Junction and Storage Temperature Range Unit V 8a 6.8 6.1b, c 4.8b, c 25 4.2 IDM Pulsed Drain Current Continuous Source-Drain Diode Current Limit 60 ± 20 A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Symbol RthJA RthJF Typical 38 20 Maximum 50 25 Unit °C/W Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 °C/W. 1 DT. www.daysemi.jp SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 60 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time V 55 mV/°C - 6.3 1.5 2.5 V ± 100 nA VDS = 60 V, VGS = 0 V 1 VDS = 60 V, VGS = 0 V, TJ = 55 °C 10 VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 4.6 A 25 A 0.030 0.036 VGS = 4.5 V, ID = 4.2 A 0.035 0.043 VDS = 15 V, ID = 4.6 A 20 1100 VDS = 30 V, VGS = 0 V, f = 1 MHz 90 pF 55 VDS = 30 V, VGS = 10 V, ID = 4.6 A 21 32 10.5 16 3.5 f = 1 MHz 3.3 5 20 30 150 225 20 30 tf 60 90 td(on) 10 15 tr td(off) nC 4.2 td(on) tr Ω S VDS = 30 V, VGS = 4.5 V, ID = 4.6 A td(off) µA VDD = 30 V, RL = 5.4 Ω ID ≅ 5.6 A, VGEN = 4.5 V, Rg = 1 Ω VDD = 30 V, RL = 5.4 Ω ID ≅ 5.6 A, VGEN = 10 V, Rg = 1 Ω tf 15 25 25 40 10 15 Ω ns Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 4.2 TC = 25 °C 25 IS = 2 A IF = 5.5 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.8 1.2 V 25 50 ns 25 50 nC 19 6 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 DT. www.daysemi.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 5 25 VGS = 10 V thru 4 V TC = – 55 °C 4 ID - Drain Current (A) ID - Drain Current (A) 20 15 10 VGS = 3 V 5 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ID = 25 °C 3 ID = 125 °C 2 1 0 0.0 2.0 0.5 VDS - Drain-to-Source Voltage (V) 1.5 2.0 2.5 3.0 3.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.040 1500 1200 Ciss VGS = 4.5 V 0.036 0.032 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 1.0 VGS = 10 V 900 600 0.028 300 Coss 0.024 Crss 0 0 5 10 15 20 25 0 10 ID - Drain Current (A) 20 40 50 60 VDS - Drain-to-Source Voltage (V) Capacitance On-Resistance vs. Drain Current 2.0 10 ID = 4.6 A 1.8 8 VDS = 30 V 6 VDS = 48 V 4 VGS = 10 V, ID = 4.6 A 1.6 (Normalized) RDS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 30 1.4 1.2 1.0 2 0.8 0 0 5 10 15 20 25 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 3 DT. www.daysemi.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 RDS(on) - Drain-to-Source On-Resistance (Ω) 0.08 IS - Source Current (A) TJ = 150 °C 10 TJ = 25 °C 1 0.0 ID = 4.6 A 0.07 0.06 125 °C 0.05 0.04 0.03 25 °C 0.02 0.2 0.4 0.6 0.8 1.0 1.2 0 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.6 50 2.4 ID = 250 µA 40 2.0 30 Power (W) VGS(th) (V) 2.2 1.8 1.6 20 1.4 10 1.2 1.0 - 50 - 25 0 25 50 75 100 125 0 10-3 150 10-2 100 Limited by RDS(on)* ID - Drain Current (A) 10 100 µs 1 ms 1 10 ms 100 ms TA = 25 °C Single Pulse 1s 10 s BVDSS Limited DC 10 100 0.01 1 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified Safe Operating Area 4 10 100 Single Pulse Power, Junction-to-Ambient Threshold Voltage 0.1 1 Time (s) TJ - Temperature (°C) 0.1 10-1 600 DT. www.daysemi.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 12 5 4 Power (W) ID - Drain Current (A) 9 Package Limited 6 3 2 3 1 0 0 0 25 50 75 100 125 150 25 50 75 100 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power, Junction-to-Foot 125 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 5 DT. www.daysemi.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 70 C/W 0.02 Single Pulse 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot 6 1 10 Package Information SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS DIM Min INCHES Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 www.daysemi.jp 1 Application Note RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.daysemi.jp 1 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Legal Disclaimer Notice www.daysemi.jp Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Din-Tek Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Din-Tek makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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