EID1414A1-8 UPDATED 07/12/2007 14.00-14.50 GHz 8-Watt Internally-Matched Power FET FEATURES • • • • • • • 14.00-14.50 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 6.5 dB Power Gain at 1dB Compression 27% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH DESCRIPTION The EID1414A1-8 is a high power, highly linear, single stage MFET amplifier in a flange mount package. This amplifier features Excelics’ unique PHEMT transistor technology. Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 14.00-14.50GHz VDS = 10 V, IDSQ ≈ 2200mA Gain at 1dB Compression f = 14.00-14.50GHz VDS = 10 V, IDSQ ≈ 2200mA Gain Flatness f = 14.00-14.50GHz VDS = 10 V, IDSQ ≈ 2200mA Power Added Efficiency at 1dB Compression f = 14.00-14.50GHz VDS = 10 V, IDSQ ≈ 2200mA MIN TYP MAX UNITS 38.5 39.5 dBm 5.5 6.5 dB ±0.6 dB 27 % Id1dB Drain Current at 1dB Compression f = 14.00-14.50GHz 2800 3600 mA IDSS Saturated Drain Current VDS = 3 V, VGS = 0 V 4200 5760 mA VP Pinch-off Voltage VDS = 3 V, IDS = 40 mA -1.2 -2.5 V RTH Thermal Resistance2 3.5 4.0 o C/W Notes: 1. Tested with 100 Ohm gate resistor. 2. Overall Rth depends on case mounting. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 4 Revised July 2007 EID1414A1-8 14.00-14.50 GHz 8-Watt Internally-Matched Power FET UPDATED 07/12/2007 ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2 SYMBOL CHARACTERISTIC VALUE VDS Drain to Source Voltage 10 V VGS Gate to Source Voltage -4.5 V IDS Drain Current IDSS IGSF Forward Gate Current 80 mA PIN Input Power PT Total Power Dissipation 35 W TCH Channel Temperature 150°C TSTG Storage Temperature -65/+150°C @ 3dB compression Notes: 1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF. 2. Bias conditions must also satisfy the following equation PT < (TCH –TPKG)/RTH; where TPKG = temperature of package, and PT = (VDS * IDS) – (POUT – PIN). PERFORMANCE DATA Typical S-Parameters (T= 25°C, 50Ω system, de-embedded to edge of package) VDS = 10 V, IDSQ ≈ 2200mA 0 0. 4 .0 3. 10 0 4. .0 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0.2 0 10 .0 0 0. 2 - 5. 0 .0 0. 4. -1.0 -145.55 -155.39 -166.06 -178.28 168.69 152.39 132.83 109.53 86.10 61.35 41.09 23.89 9.26 -3.80 DB(|S[1,2]|) * EID1414-8 -20 -30 13.5 - 3. 0 0 --- S11 --MAG ANG 0.4077 0.3666 0.3254 0.2798 0.2373 0.1971 0.1656 0.1424 0.1325 0.1346 0.1456 0.1612 0.1724 0.1832 4 DB(|S[2,1]|) * EID1414-8 0 2. 0.8 1.0 -0.8 6 -0 0. 0 .6 S[2,2] * EID1414-8 -3 2. 13.60 13.70 13.80 13.90 14.00 14.10 14.20 14.30 14.40 14.50 14.60 14.70 14.80 14.90 .0 .4 -10 -4 5 .0 S[1,1] * EID1414-8 0 -10. 0 .2 2 0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0. 2 -0 FREQ (GHz) -0. 10 .0 0 10.0 - 0 5 .0 0 S 21 and S 12 (dB ) .4 -10. 2. 0.8 6 0. .0 - 5. S21 and S12 20 -0 .6 -2 -3 -4 Swp Max 15GHz -0 -0.8 -1.0 1.0 S11 and S22 --- S21 --MAG ANG 2.5516 2.6444 2.6910 2.7499 2.7742 2.7890 2.7922 2.7801 2.7470 2.7206 2.6903 2.6450 2.5955 2.5416 14 14.5 15 Frequency (GHz) Swp Min 13.5GHz 132.84 123.30 114.68 104.97 95.48 86.00 76.30 66.44 57.12 47.94 38.72 29.91 20.97 12.02 --- S12 --MAG ANG --- S22 --MAG ANG 0.0504 0.0528 0.0542 0.0560 0.0561 0.0580 0.0610 0.0601 0.0615 0.0610 0.0610 0.0606 0.0602 0.0587 0.4354 0.3997 0.3624 0.3259 0.2990 0.2760 0.2647 0.2660 0.2747 0.2865 0.3018 0.3201 0.3389 0.3527 118.29 105.14 97.21 87.14 76.29 65.56 55.52 46.74 37.32 27.10 15.70 5.80 -2.53 -14.26 Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com 159.24 149.67 138.73 126.21 111.82 96.10 80.39 63.22 48.13 35.06 23.52 13.11 4.09 -4.26 page 2 of 4 Revised July 2007 EID1414A1-8 UPDATED 07/12/2007 14.00-14.50 GHz 8-Watt Internally-Matched Power FET Power De-rating Curve Power Dissipation vs. Temperature 40 Total Power Dissipation (W) 35 30 Potentially Unsafe Operating Region 25 20 Safe Operating Region 15 10 5 0 0 25 50 75 100 Case Temperature (°C) 125 150 Typical Power Data (VDS = 10 V, IDSQ = 2200 mA) P-1dB & G-1dB vs Frequency 11 41 10 40 9 39 8 38 7 P-1dB (dBm) 37 13.6 G-1dB (dB) P-1dB (dBm) 42 13.8 14.0 14.2 G-1dB (dB) 14.4 6 14.6 Frequency (GHz) Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 3 of 4 Revised July 2007 EID1414A1-8 14.00-14.50 GHz 8-Watt Internally-Matched Power FET UPDATED 07/12/2007 PACKAGE OUTLINE SOURCE Dimensions in inches, Tolerance + .005 unless otherwise specified Excelics .060 MIN. .060 MIN. EID1414A1-8 .650±.008 .512 GATE DRAIN .319 .022 YYWW SN .045 .094 .382 .004 .129 .070 ±.008 ALL DIMENSIONS IN INCHES ORDERING INFORMATION Notes: Part Number Grade1 fTest (GHz) P1dB (min) EID1414A1-8 Industrial 14.00-14.50 GHz 38.5 1. Contact factory for military and hi-rel grades. 2. Exact test conditions are specified in “Electrical Characteristics” table. DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 4 of 4 Revised July 2007