Anpec APM3011NUC-TR N-channel enhancement mode mosfet Datasheet

APM3011N
N-Channel Enhancement Mode MOSFET
Features
•
•
•
•
Pin Description
30V/60A , RDS(ON)=9mΩ(typ.) @ VGS=10V
RDS(ON)=14mΩ(typ.) @ VGS=5V
Super High Dense Cell Design for Extremely
Low RDS(ON)
Reliable and Rugged
TO-220, TO-252 and TO-263 Packages
Applications
•
Top View of TO-220 , TO-252 and TO-263
Power Management in Desktop Computer or
DC/DC Converters Systems.
Ordering and Marking Information
APM3011N
Package Code
F : TO-220 U :TO-252
Temp. Range
C : 0 to 70 ° C
Handling Code
TU : Tube
TR : Tape & Reel
Handling Code
Temp. Range
Package Code
APM 3011N G/U/F :
APM 3011N
XXXXX
XXXXX - Date Code
Absolute Maximum Ratings
Symbol
G : TO-263
(TA = 25°C unless otherwise noted)
Parameter
Rating
VDSS
Drain-Source Voltage
30
VGSS
Gate-Source Voltage
±20
ID*
Maximum Drain Current – Continuous
60
IDM
Maximum Drain Current – Pulsed
120
Unit
V
A
* Surface Mounted on FR4 Board, t ≤ 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Mar., 2002
1
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APM3011N
Absolute Maximum Ratings Cont.
Symbol
PD
(TA = 25°C unless otherwise noted)
Parameter
Maxim um Power Dissipation
Rating
T A =25°C
T A =100°C
TJ
TO-252
50
TO-263
62.5
TO-252
20
TO-263
25
Maxim um Junction Tem perature
Unit
W
W
150
°C
-55 to 150
°C
T STG
Storage Tem perature Range
R θJA
Thermal Resistance – Junction to Ambient
50
°C/W
R θJC
Thermal Resistance – Junction to Case
2.5
°C/W
Electrical Characteristics
Symbol
Static
BVDSS
IDSS
VGS(th)
IGSS
RDS(ON)a
VSda
Dynamicb
Qg
Qgs
Qgd
td(ON)
Tr
td(OFF)
Tf
Ciss
Coss
Crss
Parameter
Drain-Source Breakdown
V
lt Gate Voltage Drain
Zero
Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
Resistance
Diode Forward Voltage
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(TA = 25°C unless otherwise noted)
Test Condition
VGS=0V, IDS=250µA
VDS=24V , VGS=0V
VDS=24V, VGS=0V, Tj= 55°C
VDS=VGS, IDS=250µA
VGS=±20V, VDS=0V
VGS=10V, IDS=30A
VGS=5V, IDS=15A
ISD=24A, VGS=0V
VDS=15V, IDS=30A
VGS=4.5V
VDD=15V, IDS=1A,
VGEN=10V, RG=0.2Ω
VGS=0V
VDS=15V
Frequency =1.0MHz
APM3011N
Typ.
Max.
Min.
30
Unit
V
1
9
14
0.6
22
12.8
5
9
6
30
8
2000
420
210
1
5
3
±100
11
18
1.2
µA
V
nA
mΩ
V
28
nC
14
12
45
16
ns
pF
Notes
a
b
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
: Guaranteed by design, not subject to production testing
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Mar., 2002
2
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APM3011N
Typical Characteristics
Output Characteristics
Transfer Characteristics
70
50
VDS=10V
IDS-Drain Current (A)
50
IDS-Drain Current (A)
VG=4,4.5,6,8,10V
60
V GS=3V
40
30
20
VGS=2.5V
40
30
TJ=25°C
20
TJ=125°C
10
TJ=-55°C
10
0
0
1
2
3
4
5
6
7
8
9
0
1.0
10
1.5
VDS-Drain-to-Source Voltage (V)
2.0
3.5
4.0
On-Resistance vs. Drain Current
1.2
0.020
RDS(ON)-On-Resistance (Ω)
IDS=250µA
VGS(th)-Variance (V)
3.0
VGS-Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.0
0.8
0.6
0.4
-50
2.5
-25
0
25
50
75
100
125
0.012
V GS=10V
0.008
0.004
0.000
150
Tj-Junction Temperature (°C)
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Mar., 2002
V GS=5V
0.016
0
10
20
30
40
50
60
IDS-Drain Current (A)
3
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APM3011N
Typical Characteristics Cont.
On-Resistaence vs. Junction Temperature
RDS(ON)-On Resistance (Ω) (Normalized)
On-Resistance vs. Gate-to-Source Voltage
0.035
RDS (ON)-On-Resistance (Ω)
IDS=30A
0.030
0.025
0.020
0.015
0.010
0.005
0.000
3
4
5
6
7
8
9
10
VGS=10V
IDS=30A
1.4
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75
100
125
Gate Voltage (V)
Tj-Junction Temperature (°C)
Gate Charge
Capacitance Characteristics
10
150
3000
VDS=15V
IDS=20A
2000
8
C-Capacitance (pF)
VGS-Gate-to-Source Voltage (V)
1.6
6
4
Ciss
1000
Coss
500
Crss
2
Frequency=1MHz
0
0
10
20
30
40
100
0.1
50
QG-Total-Gate Charge (nC)
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Mar., 2002
1
10
30
VDS-Drain-to-Source Voltage (V)
4
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APM3011N
Typical Characteristics Cont.
Source-Drain Diode Forward Voltage
Single Pulse Power
3000
100
2000
10
TJ=125°C
1
Power (W)
ISD-Source Current (A)
2500
TJ=-55°C
TJ=25°C
0.1
0.0
0.2
0.4
0.6
1500
1000
500
0.8
1.0
1.2
0 1 05
1.4
-
-
-
-
1 04
1 03
1 02
1 01
VSD-Source to Drain Voltage
1 00
Time (sec)
Transient Thermal Response Curve
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle=0.5
D=0.2
D=0.1
0 .1
D=0.05
D=0.02
D=0.01
SINGLE PULSE
0 .0 1
-5
10
10
-4
1. Duty Cycle , D=t1/t2
2. Per Unit Base=RthJA=62.5°C/W
3. TJM-TA=PDMZthJA
10
-3
10
-2
10
-1
10
0
Square Wave Pulse Duration (sec)
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Mar., 2002
5
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APM3011N
Package Informaion
TO-252( Reference JEDEC Registration TO-252)
E
A
b2
C1
L2
D
H
L1
L
b
C
e1
Dim
A
A1
Mi ll im et er s
Inc he s
Min .
Ma x .
Min .
Ma x .
2. 1 8
2. 3 9
0. 0 86
0. 0 94
A1
0. 8 9
1. 2 7
0. 0 35
0. 0 50
b
0. 5 08
0. 8 9
0. 0 20
0. 0 35
b2
5. 2 07
5. 4 61
0. 2 05
0. 2 15
C
0. 4 6
0. 5 8
0. 0 18
0. 0 23
C1
0. 4 6
0. 5 8
0. 0 18
0. 0 23
D
5. 3 34
6. 2 2
0. 2 10
0. 2 45
E
6. 3 5
6. 7 3
0. 2 50
0. 2 65
e1
3. 9 6
5. 1 8
0. 1 56
0. 2 04
H
9. 3 98
10 . 41
0. 3 70
0. 4 10
L
0. 5 1
L1
0. 6 4
1. 0 2
0. 0 25
0. 0 40
L2
0. 8 9
2. 0 32
0. 0 35
0. 0 80
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Mar., 2002
0. 0 20
6
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APM3011N
Packaging Information Cont.
TO-263 ( Reference JEDEC Registration TO-263)
E
L2
E1
TERMINAL 4
D1
D
L
L3
A
c2
R
Φ1
L1
L4
DETAIL "A"ROTED
c
Millimeters
Dim
A
b
b2
c
c2
D
E
L
L1
L2
L3
Min.
4.06
0.51
1.14
1.14
8.64
9.65
14.60
2.24
1.02
1.20
0.38 TYP.
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Mar., 2002
Inches
Max.
4.83
1.016
1.651
Min.
0.160
0.02
0.045
1.40
9.65
10.54
15.88
2.84
2.92
1.78
0.045
0.340
0.380
0.575
0.090
0.040
0.050
7
0.015 TYP.
Max.
0.190
0.040
0.065
0.055
0.380
0.415
0.625
0.110
0.112
0.070
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APM3011N
Package Information Cont.
TO-220 ( Reference JEDEC Registration TO-220)
D
R
Q
b
E
e
b1
e1
L1
L
H1
A
c
F
Dim
A
b1
b
c
D
e
e1
E
F
H1
J1
L
L1
R
Q
Millimeters
Min.
3.56
1.14
0.51
0.31
14.23
2.29
4.83
9.65
0.51
5.84
2.03
12.7
3.65
3.53
2.54
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Mar., 2002
J1
Inches
Max.
4.83
1.78
1.14
1.14
16.51
2.79
5.33
10.67
1.40
6.86
2.92
14.73
6.35
4.09
3.43
8
Min.
0.140
0.045
0.020
0.012
0.560
0.090
0.190
0.380
0.020
0.230
0.080
0.500
0.143
0.139
0.100
Max.
0.190
0.070
0.045
0.045
0.650
0.110
0.210
0.420
0.055
0.270
0.115
0.580
0.250
0.161
0.135
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APM3011N
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
temperature
Reference JEDEC Standard J-STD-020A APRIL 1999
Peak temperature
183°C
Pre-heat temperature
Time
Classification Reflow Profiles
Average ramp-up rate(183 °C to Peak)
Preheat temperature 125 ± 25 °C)
Temperature maintained above 183 °C
Time within 5 °C of actual peak temperature
Peak temperature range
Ramp-down rate
Time 25 °C to peak temperature
Convection or IR/
Convection
3 °C/second max.
120 seconds max.
60 ~ 150 seconds
10 ~ 20 seconds
220 +5/-0 °C or 235 +5/-0 °C
6 °C /second max.
6 minutes max.
VPR
10 °C /second max.
60 seconds
215~ 219 °C or 235 +5/-0 °C
10 °C /second max.
Package Reflow Conditions
pkg. thickness ≥ 2.5mm
and all bags
Convection 220 +5/-0 °C
VPR 215-219 °C
IR/Convection 220 +5/-0 °C
pkg. thickness < 2.5mm and
pkg. volume ≥ 350 mm
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Mar., 2002
9
pkg. thickness < 2.5mm and pkg.
volume <
Convection 235 +5/-0 °C
VPR 235 +5/-0 °C
IR/Convection 235 +5/-0 °C
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APM3011N
Reliability test program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimension
t
D
P
Po
E
P1
W
Bo
F
Ao
D1
Ko
T2
J
C
A
B
T1
Application
A
B
C
J
2.5± 0.5
Po
T1
16.4 +0.3
-0.2
P1
TO-252
330±3
100 ± 2
13 ± 0. 5
2 ± 0.5
Application
F
D
D1
TO-252
7.5 ± 0.1
1.5± 0.1
Application
A
TO-263
T2
P
E
8 ± 0.1
1.75± 0.1
Ao
W
16 + 0.3
16 - 0.1
Bo
Ko
t
1.5+ 0.25
4.0 ± 0.1
2.0 ± 0.1
6.8 ± 0.1
10.4± 0.1
2.5± 0.1
0.3±0.05
B
C
J
T1
T2
P
E
13 ± 0. 5
2 ± 0.5
24 ± 4
2± 0.3
16 ± 0.1
1.75± 0.1
D
D1
Po
P1
Ao
W
24 + 0.3
- 0.1
Bo
380±3
80 ± 2
Application
F
Ko
t
TO-263
11.5 ± 0.1
1.5 +0.1
1.5± 0.25
4.0 ± 0.1
2.0 ± 0.1 10.8 ± 0.1 16.1± 0.1
5.2± 0.1 0.35±0.013
(mm)
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Mar., 2002
10
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APM3011N
Cover Tape Dimensions
Application
TO- 252
TO- 263
Carrier Width
16
24
Cover Tape Width
13.3
21.3
Devices Per Reel
2500
1000
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Mar., 2002
11
www.anpec.com.tw
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