Hitachi BB502 Build in biasing circuit mos fet ic uhf/vhf rf amplifier Datasheet

BB502C
Build in Biasing Circuit MOS FET IC
UHF RF Amplifier
ADE-208-810B(Z)
3rd. Edition
Jun. 1999
Features
•
•
•
•
Build in Biasing Circuit; To reduce using parts cost & PC board space.
Low noise; NF = 1.6 dB typ. at f = 900 MHz
High gain; PG = 22 dB typ. at f = 900 MHz
Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; CMPAK-4(SOT-343mod)
Outline
CMPAK-4
2
3
1
4
Note:
1.
2.
1. Source
2. Gate1
3. Gate2
4. Drain
Marking is “BS–”.
BB502C is individual type number of HITACHI BBFET.
BB502C
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDS
6
V
Gate1 to source voltage
VG1S
+6
−0
V
Gate2 to source voltage
VG2S
+6
−0
V
Drain current
ID
20
mA
Channel power dissipation
Pch
100
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
6
—
—
V
I D = 200µA
VG1S = VG2S = 0
Gate1 to source breakdown
voltage
V(BR)G1SS
+6
—
—
V
I G1 = +10µA
VG2S = VDS = 0
Gate2 to source breakdown
voltage
V(BR)G2SS
+6
—
—
V
I G2 = +10µA
VG1S = VDS = 0
Gate1 to source cutoff current I G1SS
—
—
+100
nA
VG1S = +5V
VG2S = VDS = 0
Gate2 to source cutoff current I G2SS
—
—
+100
nA
VG2S = +5V
VG1S = VDS = 0
Gate1 to source cutoff voltage VG1S(off)
0.5
0.7
1.0
V
VDS = 5V, VG2S = 4V
I D = 100µA
Gate2 to source cutoff voltage VG2S(off)
0.5
0.7
1.0
V
VDS = 5V, VG1S = 5V
I D = 100µA
Drain current
I D(op)
8
11
14
mA
VDS = 5V, VG1 = 5V
VG2S = 4V, RG = 180kΩ
Forward transfer admittance
|yfs|
20
25
30
mS
VDS = 5V, VG1 = 5V
VG2S =4V
RG = 180kΩ, f = 1kHz
Input capacitance
c iss
1.4
1.7
2.0
pF
VDS = 5V, VG1 = 5V
Output capacitance
c oss
0.7
1.1
1.5
pF
VG2S =4V, RG = 180kΩ
Reverse transfer capacitance c rss
—
0.02
0.05
pF
f = 1MHz
Power gain
PG
17
22
—
dB
VDS = 5V, VG1 = 5V
VG2S =4V, RG = 180kΩ
Noise figure
NF
—
1.6
2.2
dB
f = 900MHz
2
BB502C
Main Characteristics
Test Circuit for Operating Items (I D(op) , |yfs|, Ciss, Coss, Crss, NF, PG)
VG2
VG1
RG
Gate 2
Gate 1
Drain
Source
A
ID
Application Circuit
V DS = 5 V
VAGC = 4 to 0.3 V
BBFET
RFC
Output
Input
RG
V GG = 5 V
3
BB502C
900MHz Power Gain, Noise Test Circuit
VD
VG1 VG2
C6
C4
C5
R1
R2
C3
R3
RFC
Output (50 Ω)
D
G2
L3
Input (50 Ω)
L4
G1
S
L1
L2
C1
C1, C2 :
C3 :
C4 to C6 :
R1 :
R2 :
R3 :
C2
Variable Capacitor (10pF MAX)
Disk Capacitor (1000pF)
Air Capacitor (1000pF)
180 kΩ
47 kΩ
4.7 kΩ
L2:
L1:
10
3
3
8
10
26
(φ1mm Copper wire)
Unit: mm
21
L4:
L3:
18
10
10
7
7
29
RFC: φ1mm Copper wire with enamel 4turns inside dia 6mm
4
Typical Output Characteristics
20
100
50
0
50
100
150
Ambient Temperature
0
12
1
2
3
Drain to Source Voltage
kΩ
4
5
V DS (V)
Drain Current vs. Gate1 Voltage
I D (mA)
V DS = 5 V
R G = 120 kΩ
4V
3V
Drain Current
I D (mA)
Drain Current
330
20
12
2V
8
4
VG2S = 1 V
0
kΩ
=
4
Drain Current vs. Gate1 Voltage
20
16
kΩ
0
18 kΩ
0
22 Ω
k
0
27
8
Ta (°C)
0
G
12
0
200
k
16
15
150
V G2S = 4 V
V G1 = VDS
R
I D (mA)
200
Maximum Channel Power
Dissipation Curve
Drain Current
Channel Power Dissipation
Pch (mW)
BB502C
1
2
Gate1 Voltage
3
V G1
4
(V)
V DS = 5 V
R G = 180 kΩ
16
12
4V
3V
8
2V
4
VG2S = 1 V
5
0
1
2
3
Gate1 Voltage V G1
4
(V)
5
5
BB502C
Forward Transfer Admittance |y fs | (mS)
Drain Current vs. Gate1 Voltage
Drain Current
I D (mA)
20
16
V DS = 5 V
R G = 270 kΩ
12
8
4V
3V
2V
4
VG2S = 1 V
0
1
2
V G1
(V)
30
24
30
24
V DS = 5 V
R G = 180 kΩ
f = 1 kHz
4V
3V
18
2V
12
6
VG2S = 1 V
1
2
3
4
Gate1 Voltage V G1 (V)
5
4V
3V
2V
12
6
VG2S = 1 V
0
5
V DS = 5 V
R G = 120 kΩ
f = 1 kHz
18
Forward Transfer Admittance
vs. Gate1 Voltage
0
6
4
Forward Transfer Admittance |y fs | (mS)
Forward Transfer Admittance |y fs | (mS)
Gate1 Voltage
3
Forward Transfer Admittance
vs. Gate1 Voltage
1
2
3
4
Gate1 Voltage V G1 (V)
5
Forward Transfer Admittance
vs. Gate1 Voltage
30
24
V DS = 5 V
R G = 270 kΩ
f = 1 kHz
3V
4V
18
12
6
VG2S = 1 V
0
1
2
3
4
Gate1 Voltage V G1 (V)
5
BB502C
Noise Figure vs. Gate Resistance
Power Gain vs. Gate Resistance
4
25
Noise Figure NF (dB)
Power Gain PG (dB)
30
20
15
10
5
0
100
VDS = VG1 = 5 V
VG2S = 4 V
f = 900 MHz
3
2
1
0
100
1000
200
500
Gate Resistance R G (k Ω )
Power Gain vs. Drain Current
Noise Figure NF (dB)
Power Gain PG (dB)
20
15
0
0
1000
4
25
5
200
500
Gate Resistance R G (k Ω )
Noise Figure vs. Drain Current
30
10
VDS = VG1 = 5 V
VG2S = 4 V
f = 900 MHz
VDS = VG1 = 5 V
VG2S = 4 V
RG = variable
f = 900 MHz
5
10
15
Drain Current I D (mA)
20
VDS = VG1 = 5 V
VG2S = 4 V
RG = variable
f = 900 MHz
3
2
1
0
0
5
10
15
20
Drain Current I D (mA)
7
BB502C
Power Gain vs.
Gate2 to Source Voltage
Drain Current vs. Gate Resistance
25
10
5
Noise Figure NF (dB)
5
4
200
500
15
10
V DS = 5 V
R G = 180 kΩ
f = 900 MHz
0
1
1000
2
4
3
Gate Resistance R G (k Ω )
Gate2 to Source Voltage V G2S (V)
Noise Figure vs.
Gate2 to Source Voltage
Input Capacitance vs.
Gate2 to Source Voltage
V DS = 5 V
R G = 180 kΩ
f = 900 MHz
3
2
1
1
20
5
0
100
8
Power Gain PG (dB)
VDS = VG1 = 5 V
VG2S = 4 V
15
4
Input Capacitance Ciss (pF)
Drain Current I D (mA)
20
3
2
1
0
4
2
3
Gate2 to Source Voltage V G2S (V)
V DS = 5 V
R G = 180 kΩ
f = 1 MHz
0
1
2
3
Gate2 to Source Voltage V G2S (V)
4
BB502C
Gain Reduction vs.
Gate2 to Source Voltage
Gain Reduction GR (dB)
0
10
20
30
V DS = V G1 = 5 V
V G2S = 4 V
R G = 180 kΩ
40
50
4
3
2
1
0
Gate2 to Source Voltage V G2S (V)
9
BB502C
S21 Parameter vs. Frequency
S11 Parameter vs. Frequency
.8
1
.6
90°
1.5
Scale: 1 / div.
60°
120°
2
.4
3
30°
150°
4
5
.2
10
.2
0
.4
.6 .8 1
1.5 2
3 45
10
180°
0°
–10
–5
–4
–.2
–3
–.4
–30°
–150°
–2
–.6
–.8
–1
–90°
Test Condition: V DS = 5 V , V G1 = 5 V
V G2S = 4 V , R G = 180 k Ω ,
Zo = 50 Ω
Test Condition: V DS = 5 V , V G1 = 5 V
V G2S = 4 V , R G = 180 k Ω ,
Zo = 50 Ω
50 to 1000 MHz (50 MHz step)
50 to 1000 MHz (50 MHz step)
S12 Parameter vs. Frequency
90°
S22 Parameter vs. Frequency
Scale: 0.002 / div.
.8
60°
120°
–60°
–120°
–1.5
1
.6
1.5
2
.4
3
30°
150°
4
5
.2
10
180°
0°
.2
0
.4
.6 .8 1
1.5 2
3 45
10
–10
–5
–4
–.2
–30°
–150°
–3
–.4
–60°
–120°
–90°
Test Condition: V DS = 5 V , V G1 = 5 V
V G2S = 4 V , R G = 180 k Ω ,
Zo = 50 Ω
50 to 1000 MHz (50 MHz step)
10
–2
–.6
–.8
–1
–1.5
Test Condition: V DS = 5 V , V G1 = 5 V
V G2S = 4 V , R G = 180 k Ω ,
Zo = 50 Ω
50 to 1000 MHz (50 MHz step)
BB502C
Sparameter (VDS = VG1 = 5V, VG2S = 4V, RG = 180kΩ, Zo = 50Ω)
S11
S21
S12
S22
f (MHz) MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
50
0.994
–2.8
2.52
176.2
0.00072
88.6
0.995
–2.2
100
0.994
–5.7
2.51
172.4
0.00161
80.9
0.998
–4.0
150
0.991
–9.2
2.50
168.1
0.00230
86.6
0.997
–6.2
200
0.985
–12.5
2.47
164.1
0.00297
78.0
0.996
–8.2
250
0.985
–15.5
2.46
160.0
0.00374
78.9
0.994
–10.2
300
0.975
–18.7
2.43
156.4
0.00436
80.6
0.992
–12.2
350
0.969
–22.0
2.40
152.3
0.00507
70.9
0.990
–14.2
400
0.962
–24.9
2.38
148.6
0.00557
77.3
0.989
–16.3
450
0.954
–27.7
2.35
144.6
0.00625
72.4
0.987
–18.5
500
0.945
–30.8
2.31
141.0
0.00663
70.0
0.984
–20.4
550
0.935
–33.8
2.28
136.7
0.00721
70.5
0.981
–22.4
600
0.925
–36.6
2.25
133.4
0.00747
68.4
0.978
–24.3
650
0.918
–39.5
2.21
130.3
0.00761
65.6
0.975
–26.4
700
0.909
–42.5
2.18
126.1
0.00807
65.6
0.972
–28.3
750
0.898
–45.0
2.14
122.9
0.00828
67.6
0.969
–30.2
800
0.887
–47.8
2.09
119.5
0.00801
65.1
0.965
–32.2
850
0.874
–50.6
2.07
116.0
0.00815
63.6
0.961
–34.2
900
0.862
–53.0
2.03
112.7
0.00832
65.1
0.958
–36.1
950
0.855
–55.5
1.99
109.4
0.00738
61.8
0.954
–37.9
1000
0.845
–58.1
1.95
108.1
0.00802
65.8
0.951
–39.8
11
BB502C
Package Dimensions
Unit: mm
1.3
0.65 0.65
+ 0.1
+ 0.1
0.3 — 0.05
0.3 — 0.05
3
0.425
2.0 –0.2
+ 0.1
0.16 — 0.06
2.1 –0.3
1.25
2
0 ~ 0.1
1
4
+ 0.1
0.4 — 0.05
0.65
0.6
0.425
+ 0.1
0.3 — 0.05
0.9 –0.1
0.2
1.25
12
Hitahi Code
EIAJ
JEDEC
CMPAK-4
SC-82AB
BB502C
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
: http:semiconductor.hitachi.com/
Europe
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan)
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Hitachi Europe GmbH
Electronic components Group
Dornacher Straße 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.
13