AOC2417 20V P-Channel MOSFET General Description Product Summary The AOC2417 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. VDS ID (at VGS=-10V) -20V -3.5A RDS(ON) (at VGS=-10V) < 32mΩ RDS(ON) (at VGS=-4.5V) < 38mΩ RDS(ON) (at VGS=-2.5V) < 50mΩ Typical ESD protection MCSP 1.57x1.57_4 Top View HBM Class 2 D Bottom View Top View Bottom View 3 2 D D S G G Pin1(G) 4 1 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Source Current (DC) Note1 TA=25°C Source Current (Pulse) Note2 TA=25°C Power Dissipation Note1 Junction and Storage Temperature Range VGS ID Rev 0 : Nov. 2012 ±12 V A -50 TJ, TSTG www.aosmd.com Units V -3.5 IDM PD Thermal Characteristics Parameter Symbol t ≤ 10s Maximum Junction-to-Ambient A RθJA Maximum Junction-to-Ambient A D Steady-State Note 1. Mounted on minimum pad PCB Note 2. PW <300 µs pulses, duty cycle 0.5% max Maximum -20 Typ 140 190 0.55 W -55 to 150 °C Max 170 230 Units °C/W °C/W Page 1 of 5 AOC2417 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -20 -1 TJ=55°C Gate-Body leakage current VDS=0V, VGS=±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA TJ=125°C VGS=-4.5V, ID=-1A Total Gate Charge Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Qrr mΩ mΩ VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs 32 44 50 DYNAMIC PARAMETERS Input Capacitance Ciss Qg(4.5V) 26 36 37 IS=-1A,VGS=0V Gate resistance V 12 Diode Forward Voltage Rg µA mΩ VSD Reverse Transfer Capacitance ±10 -1.4 38 VDS=-5V, ID=-1.5A Crss -0.98 µA 29 Forward Transconductance Output Capacitance Units VGS=-2.5V, ID=-1A gFS Coss -5 -0.6 VGS=-10V, ID=-1.5A Static Drain-Source On-Resistance Max V VDS=-20V, VGS=0V IGSS RDS(ON) Typ VGS=-10V, VDS=-10V, ID=-1.5A -0.68 S -1 V 1355 pF 225 pF 150 pF 15 Ω 28 40 14 20 nC nC 2.5 nC Gate Drain Charge 4 nC Turn-On DelayTime 7 ns VGS=-10V, VDS=-10V, RL=6.67Ω, RGEN=3Ω 6 ns 190 ns Turn-Off Fall Time 60 ns IF=-1.5A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-1.5A, dI/dt=100A/µs 20 ns nC 6 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. 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Rev 0: Nov. 2012 www.aosmd.com Page 2 of 5 AOC2417 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 -10V 60 -4.5V 50 VDS=-5V 50 -3.0V 40 -2.5V -ID(A) -ID (A) 40 30 30 20 20 -2.0V 125°C 10 10 25°C VGS=-1.5V 0 0 0 1 2 3 4 0 5 50 2 3 4 Normalized On-Resistance 1.6 VGS=-2.5V 40 RDS(ON) (mΩ Ω) 1 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics VGS=-4.5V 30 VGS=-10V 20 VGS=-10V ID=-1.5A 1.4 VGS=-4.5V ID=-1A 1.2 VGS=-2.5V ID=-1A 1 0.8 10 0 1 0 2 3 4 5 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 60 1.0E+01 ID=-1.5A 1.0E+00 50 1.0E-01 -IS (A) RDS(ON) (mΩ Ω) 125°C 40 125°C 1.0E-02 30 1.0E-03 25°C 20 25°C 1.0E-04 1.0E-05 10 0 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: Nov. 2012 2 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AOC2417 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 2500 VDS=-10V ID=-1.5A 2000 Capacitance (pF) -VGS (Volts) 8 6 4 1000 2 500 0 0 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics Ciss 1500 30 Coss Crss 0 5 10 15 -VDS (Volts) Figure 8: Capacitance Characteristics 50 100.0 TJ(Max)=150°C TA=25°C 10µs 40 Power (W) 100µs RDS(ON) limited 10.0 -ID (Amps) 20 1ms 1.0 10ms TJ(Max)=150°C TA=25°C 0.1 30 20 10 10s DC 0 0.0 0.00001 0.01 0.1 1 -VDS (Volts) 10 0.001 0.1 10 1000 100 Pulse Width (s) Figure 9: Maximum Forward Biased Safe Operating Area Figure 10: Single Pulse Power Rating Junction-toAmbient Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=230°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Rev 0: Nov. 2012 www.aosmd.com Page 4 of 5 AOC2417 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s RL V ds Vds DUT Vgs 90 % + Vdd VDC - Rg 1 0% Vgs V gs t d (o n ) tr t d (o ff) to n tf t o ff D iode R ecovery T est C ircuit & W aveform s Q rr = - V ds + Idt DUT V gs V ds - Isd V gs Ig Rev 0: Nov. 2012 L Isd + VD C - IF t rr dI/dt I RM V dd V dd V ds www.aosmd.com Page 5 of 5