APM9904K Dual N-Channel Enhancement Mode MOSFET Pin Description Features • 30V/8A, D1 D1 RDS(ON) =20mΩ(typ.) @ VGS = 10V RDS(ON) =25mΩ(typ.) @ VGS = 4.5V • • • S1 G1 S2 G2 Super High Dense Cell Design Reliable and Rugged SOP − 8 Lead Free Available (RoHS Compliant) (7) (8) D1 D1 Applications • D2 D2 Power Management in Notebook Computer, (4) G2 (2) G1 Portable Equipment and Battery Powered (5) (6) D2 D2 Systems S1 (1) S2 (3) N-Channel MOSFET Ordering and Marking Information Package Code K : SOP-8 Operating Junction Tem p. Range C : -55 to 150°C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device APM9904 Lead Free Code Handling Code Tem p. Range Package Code APM9904 K : APM9904 XXXXX XXXXX - Date Code Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 1 www.anpec.com.tw APM9904K Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±16 Continue Drain Current IDM* 300µs Pulsed Drain Current IS* Diode Continuous Forward Current TJ Maximum Junction Temperature Storage Temperature Range PD* Maximum Power Dissipation RθJA* V 8 ID* TSTG Unit VGS=10V A 30 A 4 150 °C -55 to 150 TA=25°C 2 TA=100°C 0.8 Thermal Resistance-Junction to Ambient W 62.5 °C/W Note: *Surface Mounted on 1in pad area, t ≤ 10sec. 2 Electrical Characteristics Symbol Parameter Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) VSD a a (TA = 25°C unless otherwise noted) Test Condition VGS=0V, IDS=250µA Typ. Gate Leakage Current VGS=±16V, VDS=0V Max. 30 1 30 0.8 Unit V TJ=85°C VDS=VGS, IDS=250µA Diode Forward Voltage Min. VDS=24V, VGS=0V Gate Threshold Voltage Drain-Source On-state Resistance APM9904K 1 µA 1.6 V ±100 nA VGS=10V, IDS=8A 20 26 VGS=4.5V, IDS=5.6A 25 32 ISD=4A, VGS=0V 0.8 1.3 mΩ V b Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 VGS=0V, VDS=15V, Frequency=1.0MHz VGS=0V, VDS=0V, f=1MHz 2 790 130 pF 80 2 Ω www.anpec.com.tw APM9904K Electrical Characteristics(Cont.) Symbol Parameter (TA = 25°C unless otherwise noted) Test Condition APM9904K Min. Typ. Max. 3 6 15 28 24 44 18 33 15.5 20 Unit b Dynamic Characteristics td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω Turn-off Fall Time Gate Charge Characteristics Qg Total Gate Charge ns b Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=15V, VGS=10V, IDS=8A 1.8 nC 2.2 Notes: a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 3 www.anpec.com.tw APM9904K Typical Characteristics Drain Current 2.5 10 2.0 8 ID - Drain Current (A) Ptot - Power (W) Power Dissipation 1.5 1.0 6 4 2 0.5 o o TA=25 C 0.0 0 0 20 40 60 80 100 120 140 160 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance Normalized Transient Thermal Resistence it im n) L (o 10 Rd s ID - Drain Current (A) 0 Tj - Junction Temperature (°C) 100 300µs 1ms 1 10ms 100ms 1s 0.1 DC o TA=25 C 0.01 0.01 TA=25 C,VG=10V 0.1 1 10 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 2 1E-3 1E-4 100 VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 2 Mounted on 1in pad o RθJA : 62.5 C/W 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) 4 www.anpec.com.tw APM9904K Typical Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 30 36 ID - Drain Current (A) 25 RDS(ON) - On - Resistance (mΩ) VGS= 4,5,6,7,8,9,10V 3V 20 15 2.5V 10 5 2V 0 0 1 2 32 28 VGS=4.5V 24 VGS=10V 20 16 12 3 4 5 0 5 10 15 20 25 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics Gate Threshold Voltage 30 1.4 30 IDS=250µA Normalized Threshold Voltage ID - Drain Current (A) 25 20 15 o Tj=125 C 10 o Tj=-55 C o Tj=25 C 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 1.0 0.8 0.6 0.4 -50 -25 4.0 VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 1.2 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 5 www.anpec.com.tw APM9904K Typical Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 30 1.8 VGS =10V IDS =8A o Tj=150 C 10 1.4 IS - Source Current (A) Normalized On Resistance 1.6 1.2 1.0 0.8 o Tj=25 C 1 0.6 o RON@Tj=25 C: 20mΩ 0.4 -50 -25 0 25 50 75 0.1 0.0 100 125 150 0.4 0.6 0.8 1.0 1.2 Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V) Capacitance Gate Charge 1400 1.4 10 Frequency=1MHz VDS=15V IDS=8A VGS - Gate - source Voltage (V) 1200 C - Capacitance (pF) 0.2 1000 Ciss 800 600 400 200 Coss 8 6 4 2 Crss 0 0 5 10 15 20 25 0 30 2 4 6 8 10 12 14 16 QG - Gate Charge (nC) VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 0 6 www.anpec.com.tw APM9904K Packaging Information E e1 0.015X45 SOP-8 pin ( Reference JEDEC Registration MS-012) H e2 D A1 1 L 0.004max. Dim A Mi ll im et er s Inche s A Min. 1. 35 Max . 1. 75 Min. 0. 053 Max . 0. 069 A1 D E 0. 10 4. 80 3. 80 0. 25 5. 00 4. 00 0. 004 0. 189 0. 150 0. 010 0. 197 0. 157 H L e1 e2 5. 80 0. 40 0. 33 6. 20 1. 27 0. 51 0. 228 0. 016 0. 013 0. 244 0. 050 0. 020 1. 27B S C 0. 50B S C 8° 8° φ 1 Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 7 www.anpec.com.tw APM9904K Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) tp TP C ritical Zone T L to T P T e m p e ra tu re R am p-up TL tL T sm ax T sm in R am p-down ts Preheat 25 t 25 °C to Peak T im e Classificatin Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly Pb-Free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 217°C 60-150 seconds See table 1 See table 2 10-30 seconds 20-40 seconds 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 8 www.anpec.com.tw APM9904K Classificatin Reflow Profiles(Cont.) Table 1. SnPb Entectic Process – Package Peak Reflow Tem peratures 3 3 Package Thickness Volum e m m Volum e m m <350 ≥350 <2.5 m m 240 +0/-5°C 225 +0/-5°C ≥2.5 m m 225 +0/-5°C 225 +0/-5°C Table 2. Pb-free Process – Package Classification Reflow Tem peratures 3 3 3 Package Thickness Volum e mm Volum e mm Volum e mm <350 350-2000 >2000 <1.6 m m 260 +0°C* 260 +0°C* 260 +0°C* 1.6 m m – 2.5 m m 260 +0°C* 250 +0°C* 245 +0°C* ≥2.5 m m 250 +0°C* 245 +0°C* 245 +0°C* *Tolerance: The device m anufacturer/supplier shall assure process com patibility up to and including the stated classification tem perature (this m eans Peak reflow tem perature +0°C. For exam ple 260°C+0°C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E D P Po P1 Bo F W Ao Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 D1 9 Ko www.anpec.com.tw APM9904K Carrier Tape & Reel Dimensions(Cont.) T2 J C A B T1 Application SOP-8 A 330±1 B 62 ± 1.5 C 12.75 + 0.1 5 J 2 + 0.5 T1 12.4 +0.2 T2 2± 0.2 F D D1 Po P1 Ao 5.5 ± 0.1 1.55±0.1 1.55+ 0.25 4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 W 12 + 0.3 - 0.1 Bo 5.2± 0.1 P 8± 0.1 E 1.75± 0.1 Ko t 2.1± 0.1 0.3±0.013 (mm) Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 10 www.anpec.com.tw