STMicroelectronics M48T512V-85PM1 5.0 or 3.3 v, 4 mbit (512 kbit x 8) timekeeperâ® sram Datasheet

M48T512Y
M48T512V
5.0 or 3.3 V, 4 Mbit (512 Kbit x 8) TIMEKEEPER® SRAM
Features
■
Integrated ultra low power SRAM, real-time
clock, power-fail control circuit, battery, and
crystal
■
BCD coded year, month, day, date, hours,
minutes, and seconds
■
Automatic power-fail chip deselect and WRITE
protection
■
WRITE protect voltages:
(VPFD = Power-fail deselect voltage)
– M48T512Y: VCC = 4.5 to 5.5 V
4.2 V ≤ VPFD ≤ 4.5 V
– M48T512V: VCC = 3.0 to 3.6 V
2.7 V ≤ VPFD ≤ 3.0 V
(contact ST sales office for availability)
■
Conventional SRAM operation; unlimited
WRITE cycles
■
Software controlled clock calibration for high
accuracy applications
■
10 years of data retention and clock operation
in the absence of power
■
Pin and function compatible with industry
standard 512 K x 8 SRAMS
■
Self-contained battery and crystal in DIP
package
■
RoHS compliant
– Lead-free second level interconnect
June 2010
Doc ID 5747 Rev 6
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1
PMDIP32 module (PM)
1/23
www.st.com
1
Contents
M48T512Y, M48T512V
Contents
1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2
Operating modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3
2.1
READ mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.2
WRITE mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.3
Data retention mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Clock operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3.1
Reading the clock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3.2
Setting the clock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3.3
Stopping and starting the oscillator. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3.4
Calibrating the clock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
3.5
VCC noise and negative going transients . . . . . . . . . . . . . . . . . . . . . . . . . 14
4
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
5
DC and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6
Environmental information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
7
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
8
Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
2/23
Doc ID 5747 Rev 6
M48T512Y, M48T512V
List of tables
List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
Table 9.
Table 10.
Table 11.
Table 12.
Table 13.
Table 14.
Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Operating modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
READ mode AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
WRITE mode AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Register map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Operating and AC measurement conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
DC characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Power down/up AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Power down/up trip points DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
PMDIP32 – 32-pin plastic module DIP, package mechanical data. . . . . . . . . . . . . . . . . . . 20
Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Doc ID 5747 Rev 6
3/23
List of figures
M48T512Y, M48T512V
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Figure 10.
Figure 11.
Figure 12.
Figure 13.
4/23
Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
32-pin DIP connections. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
READ mode AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
WRITE AC waveforms, WRITE enable controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
WRITE AC waveforms, chip enable controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Crystal accuracy across temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Calibration waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Supply voltage protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
AC measurement load circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Power down/up mode AC waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Recycling symbols . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
PMDIP32 – 32-pin plastic module DIP, package outline . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Doc ID 5747 Rev 6
M48T512Y, M48T512V
1
Description
Description
The M48T512Y/V TIMEKEEPER® RAM is a 512 Kb x 8 non-volatile static RAM and realtime clock organized as 524,288 words by 8 bits. The special DIP package provides a fully
integrated battery-backed memory and real-time clock solution.
The M48T512Y/V directly replaces industry standard 512 Kb x 8 SRAMs. It also provides
the non-volatility of Flash without any requirement for special WRITE timing or limitations on
the number of WRITEs that can be performed.
Figure 1.
Logic diagram
VCC
19
8
A0-A18
W
DQ0-DQ7
M48T512Y
M48T512V
E
G
VSS
AI02262
Table 1.
Signal names
A0-A18
Address inputs
DQ0-DQ7
Data inputs / outputs
E
Chip enable input
G
Output enable input
W
WRITE enable input
VCC
Supply voltage
VSS
Ground
Doc ID 5747 Rev 6
5/23
Description
Figure 2.
M48T512Y, M48T512V
32-pin DIP connections
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
Figure 3.
1
32
2
31
30
3
29
4
28
5
27
6
26
7
8 M48T512Y 25
9 M48T512V 24
23
10
22
11
21
12
20
13
19
14
18
15
17
16
VCC
A15
A17
W
A13
A8
A9
A11
G
A10
E
DQ7
DQ6
DQ5
DQ4
DQ3
AI02263
Block diagram
8x8
TIMEKEEPER
REGISTERS
OSCILLATOR AND
CLOCK CHAIN
32,768 Hz
CRYSTAL
A0-A18
POWER
524,280 x 8
SRAM ARRAY
LITHIUM
CELL
E
VOLTAGE SENSE
AND
SWITCHING
CIRCUITRY
W
VPFD
VCC
6/23
DQ0-DQ7
G
VSS
Doc ID 5747 Rev 6
AI02384
M48T512Y, M48T512V
2
Operating modes
Operating modes
The 32-pin, 600 mil hybrid DIP houses a controller chip, SRAM, quartz crystal, and a long
life lithium button cell in a single package. Figure 3 on page 6 illustrates the static memory
array and the quartz controlled clock oscillator. The clock locations contain the year, month,
date, day, hour, minute, and second in 24 hour BCD format. Corrections for 28, 29 (leap year
- compliant until the year 2100), 30, and 31 day months are made automatically. Byte
7FFF8h is the clock control register (see Table 5 on page 12). This byte controls user
access to the clock information and also stores the clock calibration setting. The seven clock
bytes (7FFFFh-7FFF9h) are not the actual clock counters; they are memory locations
consisting of BiPORT™ READ/WRITE memory cells within the static RAM array. The
M48T512Y/V includes a clock control circuit which updates the clock bytes with current
information once per second. The information can be accessed by the user in the same
manner as any other location in the static memory array. The M48T512Y/V also has its own
power-fail detect circuit. This control circuitry constantly monitors the supply voltage for an
out of tolerance condition. When VCC is out of tolerance, the circuit write protects the
TIMEKEEPER register data and SRAM, providing data security in the midst of unpredictable
system operation. As VCC falls, the control circuitry automatically switches to the battery,
maintaining data and clock operation until valid power is restored.
Table 2.
Operating modes
Mode
VCC
Deselect
WRITE
READ
4.5 to 5.5 V
or
3.0 to 3.6 V
READ
Deselect
Deselect
VSO to VPFD
≤
(min)(1)
VSO(1)
E
G
W
DQ0-DQ7
Power
VIH
X
X
High Z
Standby
VIL
X
VIL
DIN
Active
VIL
VIL
VIH
DOUT
Active
VIL
VIH
VIH
High Z
Active
X
X
X
High Z
CMOS standby
X
X
X
High Z
Battery backup mode
1. See Table 11 on page 18 for details.
Note:
X = VIH or VIL; VSO = Battery backup switchover voltage.
2.1
READ mode
The M48T512Y/V is in the READ mode whenever W (WRITE enable) is high and E (chip
enable) is low. The unique address specified by the 19 address inputs defines which one of
the 524,288 bytes of data is to be accessed. Valid data will be available at the data I/O pins
within address access time (tAVQV) after the last address input signal is stable, providing the
E and G access times are also satisfied. If the E and G access times are not met, valid data
will be available after the latter of the chip enable access times (tELQV) or output enable
access time (tGLQV). The state of the eight three-state data I/O signals is controlled by E and
G. If the outputs are activated before tAVQV, the data lines will be driven to an indeterminate
state until tAVQV. If the address inputs are changed while E and G remain active, output data
will remain valid for output data hold time (tAXQX) but will go indeterminate until the next
address access.
Doc ID 5747 Rev 6
7/23
Operating modes
Figure 4.
M48T512Y, M48T512V
READ mode AC waveforms
tAVAV
VALID
A0-A18
tAXQX
tAVQV
tELQV
tEHQZ
E
tELQX
tGLQV
tGHQZ
G
tGLQX
DQ0-DQ7
DATA OUT
AI02389
Note:
WE = High.
Table 3.
READ mode AC characteristics
Symbol
M48T512Y
M48T512V
–70
–85
Parameter(1)
Min
Max
Min
Unit
Max
tAVAV
READ cycle time
tAVQV
Address valid to output valid
70
85
ns
tELQV
Chip enable low to output valid
70
85
ns
tGLQV
Output enable low to output valid
55
ns
70
85
40
ns
tELQX(2)
Chip enable low to output transition
5
5
ns
tGLQX(2)
tEHQZ(2)
tGHQZ(2)
Output enable low to output transition
5
5
ns
tAXQX
Address transition to output transition
Chip enable high to output Hi-Z
25
30
ns
Output enable high to output Hi-Z
25
30
ns
10
5
1. Valid for ambient operating temperature: TA = 0 to 70 °C; VCC = 4.5 to 5.5 V or 3.0 to 3.6 V (except where noted).
2. CL = 5 pF.
8/23
Doc ID 5747 Rev 6
ns
M48T512Y, M48T512V
2.2
Operating modes
WRITE mode
The M48T512Y/V is in the WRITE mode whenever W (WRITE enable) and E (chip enable)
are low state after the address inputs are stable.
The start of a WRITE is referenced from the latter occurring falling edge of W or E. A WRITE
is terminated by the earlier rising edge of W or E. The addresses must be held valid
throughout the cycle. E or W must return high for a minimum of tEHAX from chip enable or
tWHAX from WRITE enable prior to the initiation of another READ or WRITE cycle. Data-in
must be valid tDVWH prior to the end of WRITE and remain valid for tWHDX afterward. G
should be kept high during WRITE cycles to avoid bus contention; although, if the output bus
has been activated by a low on E and G a low on W will disable the outputs tWLQZ after W
falls.
Figure 5.
WRITE AC waveforms, WRITE enable controlled
tAVAV
VALID
A0-A18
tAVWH
tAVEL
tWHAX
E
tWLWH
tAVWL
W
tWHQX
tWLQZ
tWHDX
DQ0-DQ7
DATA INPUT
tDVWH
AI02386
Figure 6.
WRITE AC waveforms, chip enable controlled
tAVAV
VALID
A0-A18
tAVEH
tAVEL
tELEH
tEHAX
E
tAVWL
W
tEHDX
DATA INPUT
DQ0-DQ7
tDVEH
AI02387
Doc ID 5747 Rev 6
9/23
Operating modes
Table 4.
M48T512Y, M48T512V
WRITE mode AC characteristics
Symbol
M48T512Y
M48T512V
-70
-85
Parameter(1)
Min
Max
Min
Unit
Max
tAVAV
WRITE cycle time
70
85
ns
tAVWL
Address valid to WRITE enable low
0
0
ns
tAVEL
Address valid to chip enable low
0
0
ns
tWLWH
WRITE enable pulse width
50
60
ns
tELEH
Chip enable low to chip enable high
55
65
ns
tWHAX
WRITE enable high to address transition
5
5
ns
tEHAX
Chip enable high to address transition
10
15
ns
tDVWH
Input valid to WRITE enable high
30
35
ns
tDVEH
Input valid to chip enable high
30
35
ns
tWHDX
WRITE enable high to input transition
5
5
ns
tEHDX
Chip enable high to input transition
10
15
ns
tWLQZ(2)(3)
WRITE enable low to output Hi-Z
tAVWH
Address valid to write enable high
60
70
ns
tAVEH
Address valid to chip enable high
60
70
ns
WRITE enable high to output transition
5
5
ns
tWHQX
(2)(3)
25
30
ns
1. Valid for ambient operating temperature: TA = 0 to 70 °C; VCC = 4.5 to 5.5 V or 3.0 to 3.6 V (except where noted).
2. CL = 5pF.
3. If E goes low simultaneously with W going low, the outputs remain in the high impedance state.
2.3
Data retention mode
With valid VCC applied, the M48T512Y/V operates as a conventional BYTEWIDE™ static
RAM. Should the supply voltage decay, the RAM will automatically deselect, write protecting
itself when VCC falls between VPFD (max) and VPFD (min). All outputs become high
impedance and all inputs are treated as “Don't care.”
Note:
10/23
A power failure during a WRITE cycle may corrupt data at the current addressed location,
but does not jeopardize the rest of the RAM's content. At voltages below VPFD (min), the
memory will be in a write protected state, provided the VCC fall time is not less than tF. The
M48T512Y/V may respond to transient noise spikes on VCC that cross into the deselect
window during the time the device is sampling VCC.Therefore, decoupling of the power
supply lines is recommended. When VCC drops below VSO, the control circuit switches
power to the internal battery, preserving data and powering the clock. The internal energy
source will maintain data in the M48T512Y/V for an accumulated period of at least 10 years
at room temperature. As system power rises above VSO, the battery is disconnected, and
the power supply is switched to external VCC. Write protection continues until VCC reaches
VPFD (min) plus tREC (min). Normal RAM operation can resume tREC after VCC exceeds
VPFD (max). Refer to Application Note (AN1012) on the ST website for more information on
battery life.
Doc ID 5747 Rev 6
M48T512Y, M48T512V
3
Clock operations
3.1
Reading the clock
Clock operations
Updates to the TIMEKEEPER® registers should be halted before clock data is read to
prevent reading data in transition (see Table 5 on page 12). The BiPORT™ TIMEKEEPER
cells in the RAM array are only data registers and not the actual clock counters, so updating
the registers can be halted without disturbing the clock itself.
Updating is halted when a '1' is written to the READ bit, D6 in the control register (7FFF8h).
As long as a '1' remains in that position, updating is halted. After a halt is issued, the
registers reflect the count; that is, the day, date, and time that were current at the moment
the halt command was issued. All of the TIMEKEEPER registers are updated
simultaneously. A halt will not interrupt an update in progress. The next update occurs 1
second after the READ bit is reset to a '0.'
3.2
Setting the clock
Bit D7 of the control register (7FFF8h) is the WRITE bit. Setting the WRITE bit to a '1,' like
the READ bit, halts updates to the TIMEKEEPER registers. The user can then load them
with the correct day, date, and time data in 24 hour BCD format (see Table 5 on page 12).
Resetting the WRITE bit to a '0' then transfers the values of all time registers 7FFFFh7FFF9h to the actual TIMEKEEPER counters and allows normal operation to resume. After
the WRITE bit is reset, the next clock update will occur approximately one second later.
Note:
Upon power-up, both the WRITE bit and the READ bit will be reset to '0.'
3.3
Stopping and starting the oscillator.
The oscillator may be stopped at any time. If the device is going to spend a significant
amount of time on the shelf, the oscillator can be turned off to minimize current drain on the
battery. The STOP bit is located at bit D7 within 7FFF9h. Setting it to a '1' stops the
oscillator. The M48T512Y/V is shipped from STMicroelectronics with the STOP bit set to a
'1.' When reset to a '0,' the M48T512Y/V oscillator starts after approximately one second.
Note:
It is not necessary to set the WRITE bit when setting or resetting the FREQUENCY TEST
bit (FT) or the STOP bit (ST).
Doc ID 5747 Rev 6
11/23
Clock operations
Table 5.
M48T512Y, M48T512V
Register map
Data
Function/range
Address
D7
D6
7FFFEh
0
0
0
7FFFDh
0
0
10 date
7FFFCh
0
0
0
7FFFBh
0
0
10 hours
7FFFAh
0
7FFF9h
ST
7FFF8h
W
7FFFFh
D5
D4
D3
D2
10 years
D1
D0
BCD format
Year
Year
00-99
Month
Month
01-12
Date
Date
01-31
Day
01-07
Hours
Hours
00-23
10 minutes
Minutes
Minutes
00-59
10 seconds
Seconds
Seconds
00-59
R
10 M
0
S
0
Day
Calibration
Control
Keys:
S = SIGN bit
R = READ bit
W = WRITE bit
ST = STOP bit
0 = Must be set to '0'
3.4
Calibrating the clock
The M48T512Y/V is driven by a quartz controlled oscillator with a nominal frequency of
32,768 Hz. The devices are factory calibrated at 25 °C and tested for accuracy. Clock
accuracy will not exceed 35 ppm (parts per million) oscillator frequency error at 25 °C, which
equates to about ±1.53 minutes per month. When the Calibration circuit is properly
employed, accuracy improves to better than +1/–2 ppm at 25 °C. The oscillation rate of
crystals changes with temperature. The M48T512Y/V design employs periodic counter
correction. The calibration circuit adds or subtracts counts from the oscillator divider circuit
at the divide by 256 stage (see Figure 8 on page 13).
The number of times pulses are blanked (subtracted, negative calibration) or split (added,
positive calibration) depends upon the value loaded into the five calibration bits found in the
control register. Adding counts speeds the clock up, subtracting counts slows the clock
down. The calibration bits occupy the five lower order bits (D4-D0) in the control register
7FFF8h. These bits can be set to represent any value between 0 and 31 in binary form. Bit
D5 is a sign bit; '1' indicates positive calibration, '0' indicates negative calibration. Calibration
occurs within a 64 minute cycle. The first 62 minutes in the cycle may, once per minute, have
one second either shortened by 128 or lengthened by 256 oscillator cycles. If a binary '1' is
loaded into the register, only the first 2 minutes in the 64 minute cycle will be modified; if a
binary 6 is loaded, the first 12 will be affected, and so on. Therefore, each calibration step
has the effect of adding 512 or subtracting 256 oscillator cycles for every 125, 829, 120
actual oscillator cycles; that is, +4.068 or –2.034 ppm of adjustment per calibration step in
the calibration register.
Assuming that the oscillator is running at exactly 32,768 Hz, each of the 31 increments in
the calibration byte would represent +10.7 or –5.35 seconds per month which corresponds
to a total range of +5.5 or –2.75 minutes per month.
12/23
Doc ID 5747 Rev 6
M48T512Y, M48T512V
Clock operations
One method for ascertaining how much calibration a given M48T512Y/V may require
involves setting the clock, letting it run for a month and comparing it to a known accurate
reference and recording deviation over a fixed period of time.
Calibration values, including the number of seconds lost or gained in a given period, can be
found in STMicroelectronics’ application note AN934, “TIMEKEEPER® calibration.” This
allows the designer to give the end user the ability to calibrate the clock as the environment
requires, even if the final product is packaged in a non-user serviceable enclosure. The
designer could provide a simple utility that accesses the calibration bits. For more
information on calibration see application note AN934, “TIMEKEEPER® calibration” on the
ST website.
Figure 7.
Crystal accuracy across temperature
Frequency (ppm)
20
0
–20
–40
–60
–80
–100
ΔF = -0.038 ppm (T - T )2 ± 10%
0
F
C2
–120
T0 = 25 °C
–140
–160
–40
–30
–20
–10
0
10
20
30
Temperature °C
Figure 8.
40
50
60
70
80
AI00999
Calibration waveform
NORMAL
POSITIVE
CALIBRATION
NEGATIVE
CALIBRATION
AI00594B
Doc ID 5747 Rev 6
13/23
Clock operations
3.5
M48T512Y, M48T512V
VCC noise and negative going transients
ICC transients, including those produced by output switching, can produce voltage
fluctuations, resulting in spikes on the VCC bus. A ceramic bypass capacitor value of 0.1 µF
is recommended to filter these spikes.
In addition to transients that are caused by normal SRAM operation, power cycling can
generate negative voltage spikes on VCC that drive it to values below VSS by as much as
one volt. These negative spikes can cause data corruption in the SRAM while in battery
backup mode. To protect from these voltage spikes, ST recommends connecting a schottky
diode from VCC to VSS (cathode connected to VCC, anode to VSS). (Schottky diode 1N5817
is recommended for through hole and MBRS120T3 is recommended for surface mount).
Figure 9.
Supply voltage protection
VCC
VCC
0.1µF
DEVICE
VSS
AI02169
Caution:
14/23
Negative undershoots below –0.3 V are not allowed on any pin while in the battery backup
mode.
Doc ID 5747 Rev 6
M48T512Y, M48T512V
4
Maximum ratings
Maximum ratings
Stressing the device above the ratings listed in the absolute maximum ratings table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Table 6.
Absolute maximum ratings
Symbol
TA
TSTG
TSLD(1)(2)
Parameter
Value
Unit
0 to 70
°C
–40 to 85
°C
260
°C
–0.3 to VCC +0.3
V
M48T512Y
–0.3 to 7.0
V
M48T512V
–0.3 to 4.6
V
Ambient operating temperature
Storage temperature (VCC off, oscillator off)
Lead solder temperature for 10 seconds
VIO
Input or output voltages
VCC
Supply voltage
IO
Output current
20
mA
PD
Power dissipation
1
W
1. Soldering temperature of the IC leads is to not exceed 260 °C for 10 seconds. In order to protect the lithium
battery, preheat temperatures must be limited such that the battery temperature does not exceed +85 °C.
Furthermore, the devices shall not be exposed to IR reflow.
2. For DIP packaged devices, ultrasonic vibrations should not be used for post-solder cleaning to avoid
damaging the crystal.
Caution:
Negative undershoots below –0.3 V are not allowed on any pin while in the battery backup
mode.
Doc ID 5747 Rev 6
15/23
DC and AC parameters
5
M48T512Y, M48T512V
DC and AC parameters
This section summarizes the operating and measurement conditions, as well as the DC and
AC characteristics of the device. The parameters in the following DC and AC Characteristic
tables are derived from tests performed under the measurement conditions listed in the
relevant tables. Designers should check that the operating conditions in their projects match
the measurement conditions when using the quoted parameters.
Table 7.
Operating and AC measurement conditions
Parameter
Supply voltage (VCC)
M48T512Y
M48T512V
Unit
4.5 to 5.5
3.0 to 3.6
V
0 to 70
0 to 70
°C
Load capacitance (CL)
Ambient operating temperature (TA)
100
50
pF
Input rise and fall times
≤5
≤5
ns
0 to 3
0 to 3
V
1.5
1.5
V
Input pulse voltages
Input and output timing ref. voltages
Figure 10. AC measurement load circuit
650Ω
DEVICE
UNDER
TEST
(1)
1.75V
CL
CL includes JIG capacitance
AI03971
1. CL = 50 pF for M48T512V.
Table 8.
Capacitance
Parameter(1)(2)
Min
Max
Unit
Input capacitance
-
20
pF
Input / output capacitance
-
20
pF
Symbol
CIN
CIO(3)
1. Effective capacitance measured with power supply at 5 V (M48T512Y) or 3.3 V (M48T512V). Sampled
only, not 100% tested.
2. At 25 °C, f = 1 MHz.
3. Outputs deselected.
16/23
Doc ID 5747 Rev 6
M48T512Y, M48T512V
Table 9.
DC and AC parameters
DC characteristics
Symbol
M48T512Y
M48T512V
–70
–85
Test condition(1)
Parameter
Min
ILI
ILO
(2)
0 V ≤ VIN ≤ VCC
Input leakage current
Output leakage current
ICC
Supply current
ICC1
Supply current (standby) TTL
ICC2
Supply current (standby) CMOS
Max
Min
Unit
Max
±2
±2
µA
0 V ≤ VOUT ≤ VCC
±2
±2
µA
Outputs open
115
60
mA
E = VIH
8
4
mA
E ≥ VCC – 0.2 V
4
3
mA
VIL
Input low voltage
–0.3
0.8
–0.3
0.4
V
VIH
Input high voltage
2.2
VCC +0.3
2.2
VCC +0.3
V
VOL
Output low voltage
IOL = 2.1 mA
0.4
V
VOH
Output high voltage
IOH = –1 mA
0.4
2.4
2.2
V
1. Valid for ambient operating temperature: TA = 0 to 70 °C; VCC = 4.5 to 5.5 V or 3.0 to 3.6 V (except where noted).
2. Outputs deselected.
Figure 11. Power down/up mode AC waveforms
VCC
VPFD (max)
VPFD (min)
VSO
VSS
tF
tDR
tR
tFB
INPUTS
RECOGNIZED
(Including E)
tRB
DON'T CARE
tREC
RECOGNIZED
HIGH-Z
OUTPUTS
VALID
VALID
AI02385
Doc ID 5747 Rev 6
17/23
DC and AC parameters
Table 10.
M48T512Y, M48T512V
Power down/up AC characteristics
Parameter(1)
Symbol
tF(2)
VPFD (max) to VPFD (min) VCC fall time
tFB(3)
VPFD (min) to VSS VCC fall time
Min
Max
300
Unit
µs
M48T512Y
10
µs
M48T512V
150
µs
tR
VPFD (min) to VPFD (max) VCC rise time
10
µs
tRB
VSS to VPFD (min) VCC rise time
1
µs
tREC
E recovery time
40
200
ms
1. Valid for ambient operating temperature: TA = 0 to 70 °C; VCC = 4.5 to 5.5 V or 3.0 to 3.6 V (except where noted).
2. VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring until 200µs after
VCC passes VPFD (min).
3. VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data.
Table 11.
Power down/up trip points DC characteristics
Parameter(1)(2)
Symbol
VPFD
Power-fail deselect voltage
VSO
Battery backup switchover voltage
tDR(3)
Expected data retention time
Min
Typ
Max
Unit
M48T512Y
4.2
4.35
4.5
V
M48T512V
2.7
2.9
3.0
V
M48T512Y
3.0
V
M48T512V
VPFD –100mV
V
10
1. All voltages referenced to VSS.
2. Valid for ambient operating temperature: TA = 0 to 70 °C; VCC = 4.5 to 5.5 V or 3.0 to 3.6 V (except where noted).
3. At 25 °C, VCC = 0 V.
18/23
Doc ID 5747 Rev 6
YEARS
M48T512Y, M48T512V
6
Environmental information
Environmental information
Figure 12. Recycling symbols
This product contains a non-rechargeable lithium (lithium carbon monofluoride chemistry)
button cell battery fully encapsulated in the final product.
Recycle or dispose of batteries in accordance with the battery manufacturer's instructions
and local/national disposal and recycling regulations.
Please refer to the following web site address for additional information regarding
compliance statements and waste recycling.
Go to www.st.com/nvram, then select "Lithium Battery Recycling" from "Related Topics".
Doc ID 5747 Rev 6
19/23
Package mechanical data
7
M48T512Y, M48T512V
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Figure 13. PMDIP32 – 32-pin plastic module DIP, package outline
A
A1
B
S
L
C
eA
e1
e3
D
N
E
1
PMDIP
Note:
Drawing is not to scale.
Table 12.
PMDIP32 – 32-pin plastic module DIP, package mechanical data
mm
inches
Symb
Typ
Min
Max
A
9.27
A1
Min
Max
9.52
0.365
0.375
0.38
–
0.015
–
B
0.43
0.59
0.017
0.023
C
0.20
0.33
0.008
0.013
D
42.42
43.18
1.670
1.700
E
18.03
18.80
0.710
0.740
2.29
2.79
0.090
0.110
0.590
0.630
e1
e3
20/23
38.1
Typ
0.100
1.500
eA
14.99
16.00
L
3.05
3.81
0.120
0.150
S
1.91
2.79
0.075
0.110
N
32
Doc ID 5747 Rev 6
0.600
32
M48T512Y, M48T512V
8
Part numbering
Part numbering
Table 13.
Ordering information scheme
Example:
M48T
512Y
–70
PM
1
Device type
M48T
Supply voltage and write protect voltage
512Y = VCC = 4.5 to 5.5 V; VPFD = 4.2 to 4.5 V
512V(1) = VCC = 3.0 to 3.6 V; VPFD = 2.7 to 3.0 V
Speed
–70 = 70 ns (512Y)
–85 = 85 ns (512V)
Package
PM = PMDIP32
Temperature range
1 = 0 to 70 °C
Shipping method
Blank = ECOPACK® package, tubes
1. Contact the local ST sales office for availability.
For other options, or for more information on any aspect of this device, please contact the
ST sales office nearest you.
Doc ID 5747 Rev 6
21/23
Revision history
9
Revision history
Table 14.
22/23
M48T512Y, M48T512V
Document revision history
Date
Revision
Changes
June-1998
1
03-Dec-1999
1.1
11-Dec-2000
2
20-Jul-2001
2.1
Segments re-ordered; temp./voltage info. added to tables (Table 8, 9, 3,
4, 10, 11)
07-Aug-2001
2.2
Text re-ordered from last adjustment (“Operating modes” section)
20-May-2002
2.3
Add countries to disclaimer
07-Aug-2002
2.4
Add marketing status
31-Mar-2003
3
v2.2 template applied; data retention condition updated (Table 11)
22-Feb-2005
4
Reformatted; IR reflow update (Table 6)
25-Mar-2008
5
Reformatted document, minor text changes; updated cover page and
Table 13 concerning availability of M48T512V (3.3 V version); updated
Figure 9, 10, 11, Table 9, 12, Section 7: Package mechanical data.
21-Jun-2010
6
Updated Features, Section 4, Table 12, 13; text in Section 7; added
Section 6: Environmental information; reformatted document.
First issue
M48T512Y: VPFD (Min) changed; AC measurement load circuit changed
(Figure 10); tFB and tRB changed (Figure 11, Table 10)
Reformatted
Doc ID 5747 Rev 6
M48T512Y, M48T512V
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Doc ID 5747 Rev 6
23/23