UTC HJ44H11L-TN3-T Npn epitaxial planar transistor Datasheet

UNISONIC TECHNOLOGIES CO., LTD
HJ44H11
NPN SILICON TRANSISTOR
NPN EPITAXIAL PLANAR
TRANSISTOR
„
DESCRIPTION
The UTC HJ44H11 is designed for such applications as: series,
shunt and switching regulators; output and driver stages of
amplifiers operating at frequencies from DC to greater than 1MHz;
low and high frequency inverters/converters; and many others.
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
HJ44H11L-AA3-R
HJ44H11G-AA3-R
HJ44H11L-TA3-T
HJ44H11G-TA3-T
HJ44H11L-TN3-R
HJ44H11G-TN3-R
HJ44H11L-TN3-T
HJ44H11G-TN3-T
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
Package
SOT-223
TO-220
TO-252
TO-252
Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
B
C
E
Packing
Tape Reel
Tube
Tape Reel
Tube
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QW-R209-024.D
HJ44H11
„
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25℃)
PARAMETER
Collector- Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
RATINGS
UNIT
80
V
80
V
5
V
8
A
5
A
SOT-223
5
Power Dissipation (TC=25℃)
TO-220
PD
65
W
TO-252
20
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55~+150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
SYMBOL
VCEO
VCES
VEBO
IC
IB
ELECTRICAL CHARACTERISTICS (TA=25℃)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-Emitter Breakdown Voltage
BVCEO IC=30mA, IB=0
80
Collector-Emitter Breakdown Voltage
BVCES IC=1mA, IB=0
80
Emitter-Base Breakdown Voltage
BVEBO IE=1mA, IC=0
5
Collector Cut-Off Current
ICES
VCB=80V, VEB=0
Emitter Cut-off Current
IEBO
VEB=5V, IC=0
Collector-Emitter Saturation Voltage(Note) VCE(SAT) IC=8A, IB=0.4A
Base-Emitter Saturation Voltage(Note)
VBE(SAT) IC=8A, IB=0.8A
VCE=1V, IC=2A
60
hFE1
DC Current Gain (Note)
hFE2
VCE=1V, IC=4A
40
Output Capacitance
COB
VCB=10V
Transition Frequency
fT
VCE=10V, IC=500mA, f=20MHz
Note: Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TYP
MAX
10
50
1
1.5
130
50
UNIT
V
V
V
uA
uA
V
V
pF
MHz
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HJ44H11
„
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
1000
Current Gain vs. Collector Current
100
Saturation Voltage vs. Collector Current
1000
100
VCE=1V
VCE(SAT)@IC=20IB
10
100
10000
1000
Collector Current (mA)
10000
Saturation Voltage vs. Collector Current
1000
10
10
1000
100
1000
Collector Current (mA)
Capacitance vs. Reverse-Biased Voltage
100
COB
VBE(SAT)@IC=10IB
10
100
10000
10
1000
10000
Collector Current (mA)
1
10
Reverse Biased Voltage (V)
100
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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