VS-FCSP230LTR www.vishay.com Vishay Semiconductors FlipKY®, 1.5 A Chip Scale Package Schottky Barrier Rectifier FEATURES • Ultra low VF per footprint area • Low leakage • Low thermal resistance • One-fifth footprint of SMA • Super low profile (0.6 mm) • Available tested on tape and reel • Compliant to RoHS Directive 2002/95/EC APPLICATIONS FlipKY® • Reverse polarity protection • Current steering • Freewheeling • Flyback • Oring PRODUCT SUMMARY IF(AV) 1.5 A DESCRIPTION VR 30 V VF at IF 0.37 V Vishay’s FlipKY® product family utilizes wafer level chip scale packaging to deliver Schottky diodes with the lowest VF to PCB footprint area in industry. The four bump 1.5 x 1.5 mm devices can deliver up to 1.5 A and occupy only 2.3 mm2 of board space. The anode and cathode connections are made through solder bump pads on one side of the silicon enabling designers to strategically place the diodes on the PCB. This design not only minimizes board space but also reduces thermal resistance and inductance, which can improve overall circuit efficiency. IRM max. at 25 °C 100 μA IRM max. at 125 °C 30 mA TJ max. 150 °C EAS 10 mJ Typical applications include hand-held, portable equipment such as cell phones, MP3 players, bluetooth, GPS, PDAs, and portable hard disk drives where space savings and performance are crucial. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VRRM IF(AV) UNITS 30 V 1.5 Rectangular waveform IFSM 250 1.5 Apk, TJ = 125 °C VF MAX. TJ A 0.37 V - 55 to 150 °C VS-FCSP230LTR UNITS 30 V VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage Revision: 04-Jul-11 SYMBOL VR VRWM Document Number: 94497 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FCSP230LTR www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES Maximum average forward current IF(AV) 50 % duty cycle at TPCB = 103 °C, rectangular waveform 1.5 Maximum peak one cycle non-repetitive surge current at 25 °C 5 µs sine or 3 µs rect. pulse 220 IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 2.0 A, L = 5.0 mH 10 mJ IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 2.0 A Repetitive avalanche current 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied UNITS A 21 ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS 1.5 A Maximum forward voltage drop See fig. 1 VFM (1) TJ = 25 °C 3A 1.5 A TJ = 125 °C 3A Maximum reverse leakage current See fig. 2 Maximum junction capacitance Maximum voltage rate of charge IRM (1) CT dV/dt VR = Rated VR TYP. MAX. 0.44 0.48 0.52 0.56 0.34 0.37 UNITS V 0.44 0.48 TJ = 25 °C 30 100 µA TJ = 125 °C 10 30 mA VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C - 210 pF Rated VR - 10 000 V/µs Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ (1), TStg Typical thermal resistance, junction to PCB Maximum thermal resistance, junction to ambient RthJL (2) TEST CONDITIONS DC operation VALUES UNITS - 55 to 150 °C 40 °C/W RthJA 62 Notes (1) (2) dP tot 1 ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT J R thJA Mounted 1" square PCB Revision: 04-Jul-11 Document Number: 94497 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FCSP230LTR www.vishay.com Vishay Semiconductors 160 Allowable Case Temperature (°C) IF - Instantaneous Forward Current (A) 10 TJ = 150 °C TJ = 125 °C TJ = 25 °C 1.0 0.1 150 140 130 120 110 100 Square wave (D = 0.50) 80 % rated VR applied 90 80 70 See note (1) 60 0 0.2 0.4 0.6 0.8 1.0 0 0.5 1.0 1.5 2.0 2.5 VFM - Forward Voltage Drop (V) IF(AV) - Average Forward Current (A) Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) 1.0 100 Average Power Loss (W) TJ = 150 °C IR - Reverse Current (mA) D = 3/4 D = 1/2 D = 1/3 D = 1/4 D = 1/5 DC TJ = 125 °C 10 TJ = 100 °C 1 TJ = 75 °C 0.1 TJ = 50 °C 0.01 D = 3/4 D = 1/2 D = 1/3 D = 1/4 D = 1/5 0.8 0.6 0.4 RMS limit DC 0.2 TJ = 25 °C 0.001 0 0 5 10 15 20 25 0.5 1.0 1.5 2.0 2.5 IF(AV) - Average Forward Current (A) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage (Per Leg) Fig. 5 - Forward Power Loss Characteristics (Per Leg) TJ = 25 °C 100 10 0 5 10 15 20 25 30 IFSM - Non-Repetitive Surge Current (A) VR - Reverse Voltage (V) 1000 CT - Junction Capacitance (pF) 0 30 100 At any rated load condition and with rated VRRM applied following surge 100 10 10 100 1000 10 000 VR - Reverse Voltage (V) tp - Square Wave Pulse Duration (µs) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) Fig. 6 - Maximum Non-Repetitive Surge Current (Per Leg) Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at 80 % VR applied (1) Revision: 04-Jul-11 Document Number: 94497 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FCSP230LTR www.vishay.com Vishay Semiconductors L D.U.T. IRFP460 Rg = 25 Ω Current monitor High-speed switch Freewheel diode + Vd = 25 V 40HFL40S02 Fig. 7 - Unclamped Inductive Test Circuit LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95282 Part marking information www.vishay.com/doc?95281 Packaging information www.vishay.com/doc?95062 Revision: 04-Jul-11 Document Number: 94497 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay High Power Products FlipKY® 1 A/1.5 A (Large Bump Pad Design) DIMENSIONS in millimeters Ball assignments 0.10 (0.004) C 2x 1.524 B 4 A 1 = Cathode 2 = Cathode 3 = Anode 4 = Anode 0.600 0.520 0.205 0.175 0.10 (0.004) C 2x 3 2 x 0.400 1.524 1.524 0.300 1 2 0.800 4x 0.395 0.355 Recommended footprint 0.800 Cathode ball 1 Cathode ball 2 0.800 Anode ball 4 Anode ball 3 4 x Ø 0.35 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Controlling dimension: millimeter Document Number: 95282 Revision: 02-Apr-08 For technical questions concerning discrete products, contact: [email protected] For technical questions concerning module products, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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