Analogic AAT7103IAS-T1 25v n-channel power mosfet Datasheet

AAT7103
25V N-Channel Power MOSFET
General Description
Features
The AAT7103 25V N-Channel Power MOSFET is a
member of AnalogicTech™'s TrenchDMOS™
product family. Using the ultra-high density proprietary TrenchDMOS technology, the product
demonstrates high power handling and small size.
•
•
•
Applications
Dual SOP-8 Package
Battery Packs
Cellular & Cordless Telephones
PDAs, Camcorders, and Cell Phones
Absolute Maximum Ratings
Symbol
VDS
VGS
Top View
Description
D1
D2
D2
8
7
6
5
1
S1
2
G1
3
S2
4
G2
Value
Drain-Source Voltage
Gate-Source Voltage
TA = 25°C
TA = 70°C
Continuous Drain Current @ TJ=150°C
IDM
IS
Pulsed Drain Current 3
Continuous Source Current (Source-Drain Diode) 1
TA = 25°C
Maximum Power Dissipation 1
TA = 70°C
Operating Junction and Storage Temperature Range
TJ, TSTG
D1
(TA=25°C unless otherwise noted)
ID
PD
Preliminary Information
•
•
•
VDS(MAX) = 25V
ID(MAX)(1) = 6.8 A @ 25°C
Low RDS(ON):
• 26 mΩ @VGS = 4.5V
• 41 mΩ @VGS = 2.5V
1
Units
25
±12
±6.8
±5.4
±24
1.8
2.0
1.25
-55 to 150
°C
Value
Units
100
62.5
35
°C/W
°C/W
°C/W
V
A
W
Thermal Characteristics
Symbol
RθJA
RθJA2
RθJF
7103.2003.04.0.61
Description
Typical Junction-to-Ambient steady state, one FET on
Maximum Junction-to-Ambient Figure, t < 10 sec. 1
Typical Junction-to-Foot, one FET on 1
2
1
AAT7103
25V N-Channel Power MOSFET
Electrical Characteristics
(TJ=25°C unless otherwise noted)
Symbol Description
Conditions
DC Characteristics
BVDSS
Drain-Source Breakdown Voltage
RDS(ON)
I
D(ON)
VGS(th)
IGSS
IDSS
Drain-Source ON-Resistance
3
On-State Drain Current 3
Gate Threshold Voltage
Gate-Body Leakage Current
Drain Source Leakage Current
gfs
Forward Transconductance 3
Dynamic Characteristics 4
QG
Total Gate Charge
QGS
Gate-Source Charge
QGD
Gate-Drain Charge
tD(ON)
Turn-ON Delay
tR
Turn-ON Rise Time
tD(OFF)
Turn-OFF Delay
tF
Turn-OFF Fall Time
Source-Drain Diode Characteristics
VSD
Source-Drain Forward Voltage
IS
Continuous Diode Current 1
VGS=0V, ID=250µA
VGS=4.5V, ID=6.8A
VGS=2.5V, ID=5.4A
VGS=4.5V ,VDS=5V (Pulsed)
VGS=VDS, ID=250µA
VGS= ±12V, VDS=0V
VGS=0V, VDS=25V
VGS=0V, VDS=20V, TJ=70°C
VDS=5V, ID=6.8A
VDS=15V, RD=2.2Ω, VGS=4.5V
VDS=15V, RD=2.2Ω, VGS=4.5V
VDS=15V, RD=2.2Ω, VGS=4.5V
VDD=15V, VGS=10V, RD=2.2Ω, RG=6Ω
VDD=15V, VGS=10V, RD=2.2Ω, RG=6Ω
VDD=15V, VGS=10V, RD=2.2Ω, RG=6Ω
VDD=15V, VGS=10V, RD=2.2Ω, RG=6Ω
3
VGS=0, IS=6.8A
Min
Typ
Max
25
Units
V
19
28
26
41
24
0.6
±100
1
5
20
13
1.9
2.9
15
18
36
27
mΩ
A
V
nA
µA
S
19
nC
ns
1.5
1.8
V
A
Note 1: Based on thermal dissipation from junction to ambient while mounted on a 1” x 1” PCB with optimized layout. A 10 second pulse
on a 1” x 1” PCB approximates testing a device mounted on a large multi-layer PCB as in many applications. RθJF + RθFA = RθJA
where the foot thermal reference is defined as the normal solder mounting surface of the device’s leads. RθJF is guaranteed by
design; however, RθFA is determined by PCB design. Actual maximum continuous current is limited by the application’s design.
Note 2: Steady state thermal response while mounted on a 1” x 1” PCB with maximum copper area is provided for comparison with
other devices. This test condition approximates many battery pack applications.
Note 3: Pulsed measurement 300 µs, single pulse.
Note 4: Guaranteed by design. Not subject to production testing.
2
7103.2003.04.0.61
AAT7103
25V N-Channel Power MOSFET
Typical Characteristics
(TJ = 25ºC unless otherwise noted)
Transfer Characteristics
Output Characteristics
32
4V
3.5V
3V
5V
4.5V
24
32
VD=VG
25°C
24
-55°C
ID (A)
IDS (A)
2.5V
2V
16
125°C
16
8
8
1.5V
0
0
0
0.5
1
1.5
2
2.5
0
3
1
2
4
3
VGS (V)
VDS (V)
On-Resistance vs. Drain Current
On-Resistance vs. Gate to Source Voltage
60
60
50
50
40
VGS = 2.5 V
RDS(ON) (mΩ)
RDS(ON) (mΩ)
ID = 5.5A
30
20
VGS = 4.5 V
10
40
30
20
10
0
0
8
16
24
0
32
0
3
4
5
Gate Charge
Source-Drain Diode Forward Voltage
100
VD=15V
ID=5.5A
10
3
TJ = 150°C
IS (A)
VGS (V)
2
VGS (V)
5
4
1
ID (A)
2
TJ = 25°C
1
1
0.1
0
0
2
4
6
8
10
QG, Charge (nC)
7103.2003.04.0.61
12
14
16
0
0.2
0.4
0.6
0.8
1
1.2
VSD (V)
3
AAT7103
25V N-Channel Power MOSFET
Ordering Information
Package
Marking
Part Number (Tape and Reel)
SOP-8
7103
AAT7103IAS-T1
Note: Sample stock is generally held on all part numbers listed in BOLD.
6.00 ± 0.20
3.90 ± 0.10
Package Information
4.90 ± 0.10
0.42 ± 0.09 × 8
1.27 BSC
45°
4° ± 4°
0.175 ± 0.075
1.55 ± 0.20
0.375 ± 0.125
0.235 ± 0.045
0.825 ± 0.445
All dimensions in millimeters.
AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech product. No circuit patent licenses, copyrights, mask work
rights, or other intellectual property rights are implied.
AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice, and advise customers to obtain the latest
version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale
supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability.
AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech’s standard warranty. Testing and
other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed.
Advanced Analogic Technologies, Inc.
830 E. Arques Avenue, Sunnyvale, CA 94085
Phone (408) 737-4600
Fax (408) 737-4611
4
7103.2003.04.0.61
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