CMT06N60 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy Diode is Characterized for Use in Bridge Circuits efficient design also offers a drain-to-source diode with a IDSS Specified at Elevated Temperature fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. PIN CONFIGURATION SYMBOL TO-220/TO-220FP D SOURCE DRAIN GATE Front View G 1 2 S 3 N-Channel MOSFET 2006/10/11 Rev. 1.2 Champion Microelectronic Corporation Page 1 CMT06N60 POWER FIELD EFFECT TRANSISTOR ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit A Drain to Current － Continuous ID 6.0 IDM 18 VGS ±20 V VGSM ±40 V － Pulsed Gate-to-Source Voltage － Continue － Non-repetitive Total Power Dissipation PD W TO-220 125 TO-220FP 45 Operating and Storage Temperature Range TJ, TSTG -55 to 150 Single Pulse Drain-to-Source Avalanche Energy － TJ = 25℃ ℃ mJ (VDD = 100V, VGS = 10V, IL = 6A, L = 10mH, RG = 25Ω) EAS 180 Thermal Resistance － Junction to Case θJC 1.0 θJA 62.5 TL 260 － Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds ℃/W ℃ (1) VDD = 50V, ID = 6A (2) Pulse Width and frequency is limited by TJ(max) and thermal response ORDERING INFORMATION Part Number CMT06N60N220 CMT06N60N220FP Package TO-220 TO-220FP TEST CIRCUIT Test Circuit – Avalanche Capability 2006/10/11 Rev. 1.2 Champion Microelectronic Corporation Page 2 CMT06N60 POWER FIELD EFFECT TRANSISTOR ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25℃. CMT06N60 Characteristic Drain-Source Breakdown Voltage Symbol Min V(BR)DSS 600 Typ Max Units V (VGS = 0 V, ID = 250 μA) Drain-Source Leakage Current IDSS μA (VDS = 600 V, VGS = 0 V) 100 (VDS = 480 V, VGS = 0 V, TJ = 125℃) 50 Gate-Source Leakage Current-Forward IGSSF 100 nA IGSSR 100 nA 4.0 V (Vgsf = 20 V, VDS = 0 V) Gate-Source Leakage Current-Reverse (Vgsr = 20 V, VDS = 0 V) VGS(th) Gate Threshold Voltage 2.0 (VDS = VGS, ID = 250 μA) Static Drain-Source On-Resistance (VGS = 10 V, ID = 3.5A) * Forward Transconductance (VDS = 15 V, ID = 3.0A) * Input Capacitance f = 1.0 MHz) Reverse Transfer Capacitance Turn-On Delay Time Rise Time (VDD = 300 V, ID = 6.0 A, VGS = 10 V, Turn-Off Delay Time RG = 9.1Ω) * Fall Time Total Gate Charge Gate-Source Charge gFS (VDS = 25 V, VGS = 0 V, Output Capacitance (VDS = 300 V, ID = 6.0 A, Gate-Drain Charge RDS(on) VGS = 10 V)* Internal Drain Inductance 1.2 Ω 3.4 mhos Ciss 1498 2100 Coss 158 220 pF pF Crss 29 60 pF td(on) 14 30 tr 19 40 ns ns td(off) 40 80 ns tf 26 55 ns Qg 35.5 50 Qgs 8.1 nC nC Qgd 14.1 nC LD 4.5 nH LS 7.5 nH VSD 0.83 ton ** ns trr 266 ns (Measured from the drain lead 0.25” from package to center of die) Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) Forward Turn-On Time Reverse Recovery Time (IS = 6.0 A, dIS/dt = 100A/μs) 1.2 V * Pulse Test: Pulse Width ≦300μs, Duty Cycle ≦2% ** Negligible, Dominated by circuit inductance 2006/10/11 Rev. 1.2 Champion Microelectronic Corporation Page 3 CMT06N60 POWER FIELD EFFECT TRANSISTOR TYPICAL ELECTRICAL CHARACTERISTICS 2006/10/11 Rev. 1.2 Champion Microelectronic Corporation Page 4 CMT06N60 POWER FIELD EFFECT TRANSISTOR PACKAGE DIMENSION TO-220 A D c1 PIN 1: GATE PIN 2: DRAIN PIN 3: SOURCE E1 E F φ A A1 L1 b b1 c c1 D L E E1 e e1 F L b1 A1 c e b e1 L1 φ Side View Front View TO-220FP C R 8± 3.1 I 0 0.1 R1 .5 0 B J H Q D R1 .5 0 A A B C D E E G H I O P K J K R M 60 1. N O P G Q b R b b1 b2 e b1 e Front View 2006/10/11 Rev. 1.2 N M b2 R Side View Back View Champion Microelectronic Corporation Page 5 CMT06N60 POWER FIELD EFFECT TRANSISTOR IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. Use of CMC products in such applications is understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the customer should provide adequate design and operating safeguards. HsinChu Headquarter Sales & Marketing 5F, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan T E L : +886-3-567 9979 F A X : +886-3-567 9909 7F-6, No.32, Sec. 1, Chenggong Rd., Nangang District, Taipei City 115, Taiwan 2006/10/11 Rev. 1.2 T E L : +886-2-2788 0558 F A X : +886-2-2788 2985 Champion Microelectronic Corporation Page 6