ON NCS20082DTBR2G Operational amplifier, rail-to-rail input Datasheet

NCS20081, NCV20081,
NCS20082, NCV20082,
NCS20084, NCV20084
Operational Amplifier,
Rail-to-Rail Input and
Output, 1.2 MHz
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The NCS2008 series operational amplifiers provide rail−to−rail
input and output operation, 1.2 MHz bandwidth, and are available in
single, dual, and quad configurations. Rail−to−rail operation gives
designers use of the entire supply voltage range while taking
advantage of the 1.2 MHz bandwidth. The NCS2008 can operate on
supply voltages from 1.8 to 5.5 V over a temperature range from
−40°C to 125°C. At a 1.8 V supply, this device has a slew rate of 0.4
V/ms while consuming only 42 mA of quiescent current per channel.
Since this is a CMOS device, high input impedance and low bias
currents make it ideal for interfacing to a wide variety of signal
sensors. The NCS2008 devices are available in a variety of compact
packages.
5
1
SC70−5
CASE 419A
TSOP−5/SOT23−5
CASE 483
8
1
SOIC−8
CASE 751
Micro8]/MSOP8
CASE 846A
Features
•
•
•
•
•
•
•
•
•
•
Rail−to−Rail Input and Output
Wide Supply Range: 1.8 to 5.5 V
Wide Bandwidth: 1.2 MHz
High Slew Rate: 0.4 V/ms at VS = 1.8 V
Low Supply Current: 42 mA per Channel at VS = 1.8 V
Low Input Bias Current: 1 pA Typical
Wide Temperature Range: −40°C to 125°C
Available in a Variety of Packages
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
TSSOP−8
CASE 948S
TSSOP−14
CASE 948G
6
14
1
SOIC−14
CASE 751A
1
UDFN6
CASE 517AP
DEVICE MARKING INFORMATION
See general marking information in the device marking
section on page 2 of this data sheet.
Applications
•
•
•
•
14
Unity Gain Buffer
Battery Powered / Low Quiescent Current Applications
Low Cost Current Sensing
Automotive
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
This document contains information on some products that are still under development.
ON Semiconductor reserves the right to change or discontinue these products without
notice.
© Semiconductor Components Industries, LLC, 2016
August, 2016 − Rev. 4
1
Publication Order Number:
NCS2008/D
NCS20081, NCV20081, NCS20082, NCV20082, NCS20084, NCV20084
MARKING DIAGRAMS
Single Channel Configuration
NCS20081, NCV20081
5
1
XXMG
G
XXXAYWG
G
XX MG
G
TSOP−5/SOT23−5
CASE 483
UDFN6
CASE 517AP
1
SC70−5
CASE 419A
Dual Channel Configuration
NCS20082, NCV20082
8
8
XXX
YWW
AG
G
XXXXXX
ALYW
G
XXXX
AYWG
G
1
1
Micro8]/MSOP8
CASE 846A
TSSOP−8
CASE 948S
SOIC−8
CASE 751
Quad Channel Configuration
NCS20084, NCV20084
14
14
XXXX
XXXX
ALYWG
G
XXXXX
AWLYWWG
1
1
TSSOP−14
CASE 948G
SOIC−14
CASE 751A
XXXXX
A
WL, L
Y
WW, W
G or G
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
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2
NCS20081, NCV20081, NCS20082, NCV20082, NCS20084, NCV20084
Single Channel Configuration
NCS20081, NCV20081
OUT
1
5
IN+
VDD
1
5
VDD
VSS
1
6
OUT
NC
2
5
VDD
IN−
3
4
IN+
VSS
2
IN+
2
3
4
3
IN−
IN−
SOT23−5 (TSOP−5)
SN2 Pinout
−
−
−
+
VSS
4
OUT
+
+
UDFN6 1.6 x 1.6
SC70−5, SOT23−5 (TSOP−5)
SQ3, SN3 Pinout
Quadruple Channel Configuration
NCS20084, NCV20084
Dual Channel Configuration
NCS20082, NCV20082
OUT 1
1
IN− 1
2
−
3
+
IN+ 1
VSS
VDD
7
OUT 2
6
−
+
4
8
5
IN− 2
IN+ 2
OUT 1
1
IN− 1
2
−
−
13 IN− 4
IN+ 1
3
+
+
12 IN+ 4
VDD
4
IN+ 2
5
+
+
10 IN+ 3
IN− 2
6
−
−
9
IN− 3
OUT 2
7
8
OUT 3
14 OUT 4
11 VSS
Figure 1. Pin Connections
ORDERING INFORMATION
Device
Configuration
Automotive
NCS20081SQ3T2G
NCS20081SN2T1G
No
NCS20081SN3T1G
NCS20081MUTAG
Single**
Marking
Package
AAP
SC70
AER
SOT23−5/TSOP−5
AEU
SOT23−5/TSOP−5
AP
UDFN6
NCV20081SQ3T2G*
AAP
SC70
NCV20081SN2T1G*
AER
SOT23−5/TSOP−5
Yes
NCV20081SN3T1G*
AEU
SOT23−5/TSOP−5
NCV20081MUTAG*
AP
UDFN6
NCS20082DMR2G
2K82
Micro8/MSOP8
NCS20082DR2G
No
NCS20082DTBR2G
NCV20082DMR2G*
Dual
NCV20082DR2G*
Yes
NCV20082DTBR2G*
NCS20084_
NCS20084_
No
NCS20084_
NCV20084_
NCV20084_
NCV20084_
Quad**
Yes
NCS20082
SOIC−8
K82
TSSOP−8
2K82
Micro8/MSOP8
NCS20082
SOIC−8
K82
TSSOP−8
TBD
SOIC−14
TBD
SOP−14
TBD
TSSOP−14
TBD
SOIC−14
TBD
SOP−14
TBD
TSSOP−14
Shipping†
Contact local sales office for
more information
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D
*NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP
Capable.
**In Development. Not yet released.
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3
NCS20081, NCV20081, NCS20082, NCV20082, NCS20084, NCV20084
ABSOLUTE MAXIMUM RATINGS (Note 1)
Rating
Symbol
Limit
Unit
Supply Voltage (VDD – VSS) (Note 2)
VS
7
V
Input Voltage
VI
VSS − 0.5 to VDD + 0.5
V
Differential Input Voltage
VID
±Vs
V
Maximum Input Current
II
±10
mA
Maximum Output Current
IO
±100
mA
Continuous Total Power Dissipation (Note 2)
PD
200
mW
Maximum Junction Temperature
TJ
150
°C
Storage Temperature Range
TSTG
−65 to 150
°C
Mounting Temperature (Infrared or Convection – 20 sec)
Tmount
260
°C
ESDHBM
ESDMM
ESDCDM
2000
100
2000
V
ILU
100
mA
MSL
Level 1
ESD Capability (Note 3)
Human Body Model
Machine Model
Charge Device Model
Latch−Up Current (Note 4)
Moisture Sensitivity Level (Note 5)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS for Safe Operating Area.
2. Continuous short circuit operation to ground at elevated ambient temperature can result in exceeding the maximum allowed junction
temperature of 150°C. Output currents in excess of the maximum output current rating over the long term may adversely affect reliability.
Shorting output to either VDD or VSS will adversely affect reliability.
3. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per AEC−Q100−002 (JEDEC standard: JESD22−A114)
ESD Machine Model tested per AEC−Q100−003 (JEDEC standard: JESD22−A115)
4. Latch−up Current tested per JEDEC standard: JESD78
5. Moisture Sensitivity Level tested per IPC/JEDEC standard: J-STD-020A
THERMAL INFORMATION
Parameter
Symbol
Channels
Single Layer
Board (Note 6)
Multi−Layer
Board (Note 7)
Micro8/MSOP8
236
167
SOIC−8
190
131
TSSOP−8
253
194
Package
Unit
SC−70
Single
SOT23−5/TSOP−5
UDFN6
Junction to Ambient
Thermal Resistance
qJA
Dual
°C/W
SOIC−14
Quad
SOP−14
TSSOP−14
6. Value based on 1S standard PCB according to JEDEC51−3 with 1.0 oz copper and a 300 mm2 copper area
7. Value based on 1S2P standard PCB according to JEDEC51−7 with 1.0 oz copper and a 100 mm2 copper area
OPERATING RANGES
Parameter
Symbol
Min
Max
Unit
Operating Supply Voltage
VS
1.8
5.5
V
Differential Input Voltage
VID
VS
V
Input Common Mode Range
Ambient Temperature
VICM
VSS – 0.2
VDD + 0.2
V
TA
−40
125
°C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
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4
NCS20081, NCV20081, NCS20082, NCV20082, NCS20084, NCV20084
ELECTRICAL CHARACTERISTICS AT VS = 1.8 V
TA = 25°C; RL ≥ 10 kW; VCM = VOUT = mid−supply unless otherwise noted.
Boldface limits apply over the specified temperature range, TA = −40°C to 125°C. (Note 8)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
0.5
3.5
mV
4
mV
INPUT CHARACTERISTICS
Input Offset Voltage
Offset Voltage Drift
Input Bias Current (Note 8)
VOS
DVOS/DT
1
IIB
1
mV/°C
pA
1500
Input Offset Current (Note 8)
IOS
1
pA
1100
Channel Separation
XTLK
DC
pA
pA
125
dB
Differential Input Resistance
RID
10
GW
Common Mode Input Resistance
RIN
10
GW
Differential Input Capacitance
CID
1
pF
Common Mode Input Capacitance
CCM
5
pF
73
dB
120
dB
mA
Common Mode Rejection Ratio
CMRR
VCM = VSS – 0.2 to VDD + 0.2
48
VCM = VSS + 0.2 to VDD − 0.2
45
OUTPUT CHARACTERISTICS
Open Loop Voltage Gain
AVOL
86
80
Short Circuit Current
ISC
Output to positive rail, sinking current
15
Output to negative rail, sourcing current
11
Output Voltage High
VOH
Voltage output swing from positive rail
3
Output Voltage Low
VOL
Voltage output swing from negative rail
3
19
mV
20
19
mV
20
AC CHARACTERISTICS
Unity Gain Bandwidth
UGBW
Slew Rate at Unity Gain
SR
Phase Margin
ym
Gain Margin
Am
Settling Time
tS
Open Loop Output Impedance
VID = 1.2 Vpp, Gain = 1
VIN = 1.2 Vpp,
Gain = 1
1.2
MHz
0.4
V/ms
60
°
19
dB
Settling time to 0.1%
5
ms
Settling time to 0.01%
6
W
ZOL
f = 100 Hz
0.8
THD+N
VIN = 1.2 Vpp, f = 1 kHz, Av = 1
0.005
%
en
f = 1 kHz
30
nV/√Hz
f = 10 kHz
24
in
f = 1 kHz
300
fA/√Hz
PSRR
No Load
90
dB
NOISE CHARACTERISTICS
Total Harmonic Distortion plus Noise
Input Referred Voltage Noise
Input Referred Current Noise
SUPPLY CHARACTERISTICS
Power Supply Rejection Ratio
67
64
Power Supply Quiescent Current
IDD
Per channel, no load
8. Performance guaranteed over the indicated operating temperature range by design and/or characterization.
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5
42
60
mA
NCS20081, NCV20081, NCS20082, NCV20082, NCS20084, NCV20084
ELECTRICAL CHARACTERISTICS AT VS = 3.3 V
TA = 25°C; RL ≥ 10 kW; VCM = VOUT = mid−supply unless otherwise noted.
Boldface limits apply over the specified temperature range, TA = −40°C to 125°C. (Note 9)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
0.5
3.5
mV
4
mV
INPUT CHARACTERISTICS
Input Offset Voltage
Offset Voltage Drift
Input Bias Current (Note 9)
VOS
DVOS/DT
1
IIB
1
mV/°C
pA
1500
Input Offset Current (Note 9)
IOS
1
pA
1100
Channel Separation
XTLK
DC
pA
pA
125
dB
Differential Input Resistance
RID
10
GW
Common Mode Input Resistance
RIN
10
GW
Differential Input Capacitance
CID
1
pF
Common Mode Input Capacitance
CCM
5
pF
76
dB
120
dB
mA
Common Mode Rejection Ratio
CMRR
VCM = VSS – 0.2 to VDD + 0.2
53
VCM = VSS + 0.2 to VDD − 0.2
48
OUTPUT CHARACTERISTICS
Open Loop Voltage Gain
AVOL
90
86
Short Circuit Current
ISC
Output to positive rail, sinking current
15
Output to negative rail, sourcing current
11
Output Voltage High
VOH
Voltage output swing from positive rail
3
Output Voltage Low
VOL
Voltage output swing from negative rail
3
24
mV
25
24
mV
25
AC CHARACTERISTICS
Unity Gain Bandwidth
UGBW
Slew Rate at Unity Gain
SR
Phase Margin
ym
Gain Margin
Am
Settling Time
tS
Open Loop Output Impedance
VIN = 2.5 Vpp, Gain = 1
VIN = 2.5 Vpp,
Gain = 1
1.2
MHz
0.4
V/ms
60
°
18
dB
Settling time to 0.1%
5
ms
Settling time to 0.01%
6
W
ZOL
f = 100 Hz
0.8
THD+N
VIN = 2.5 Vpp, f = 1 kHz, Av = 1
0.005
%
en
f = 1 kHz
30
nV/√Hz
f = 10 kHz
24
in
f = 1 kHz
300
fA/√Hz
PSRR
No Load
90
dB
NOISE CHARACTERISTICS
Total Harmonic Distortion plus Noise
Input Referred Voltage Noise
Input Referred Current Noise
SUPPLY CHARACTERISTICS
Power Supply Rejection Ratio
67
64
Power Supply Quiescent Current
IDD
Per channel, no load
9. Performance guaranteed over the indicated operating temperature range by design and/or characterization.
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6
42
60
mA
NCS20081, NCV20081, NCS20082, NCV20082, NCS20084, NCV20084
ELECTRICAL CHARACTERISTICS AT VS = 5.5 V
TA = 25°C; RL ≥ 10 kW; VCM = VOUT = mid−supply unless otherwise noted.
Boldface limits apply over the specified temperature range, TA = −40°C to 125°C. (Note 10)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
0.5
3.5
mV
4
mV
INPUT CHARACTERISTICS
Input Offset Voltage
Offset Voltage Drift
Input Bias Current (Note 10)
VOS
DVOS/DT
1
IIB
1
mV/°C
pA
1500
Input Offset Current (Note 10)
IOS
1
pA
1100
Channel Separation
XTLK
DC
pA
pA
125
dB
Differential Input Resistance
RID
10
GW
Common Mode Input Resistance
RIN
10
GW
Differential Input Capacitance
CID
1
pF
Common Mode Input Capacitance
CCM
5
pF
79
dB
120
dB
mA
Common Mode Rejection Ratio
CMRR
VCM = VSS – 0.2 to VDD + 0.2
55
VCM = VSS + 0.2 to VDD − 0.2
51
OUTPUT CHARACTERISTICS
Open Loop Voltage Gain
AVOL
90
86
Short Circuit Current
ISC
Output to positive rail, sinking current
15
Output to negative rail, sourcing current
11
Output Voltage High
VOH
Voltage output swing from positive rail
3
Output Voltage Low
VOL
Voltage output swing from negative rail
3
24
mV
25
24
mV
25
AC CHARACTERISTICS
Unity Gain Bandwidth
UGBW
Slew Rate at Unity Gain
SR
Phase Margin
ym
Gain Margin
Am
Settling Time
tS
Open Loop Output Impedance
VID = 5 Vpp, Gain = 1
VIN = 5 Vpp,
Gain = 1
1.2
MHz
0.4
V/ms
60
°
17
dB
Settling time to 0.1%
5
ms
Settling time to 0.01%
6
W
ZOL
f = 100 Hz
0.8
THD+N
VIN = 5 Vpp, f = 1 kHz, Av = 1
0.005
%
en
f = 1 kHz
30
nV/√Hz
f = 10 kHz
24
in
f = 1 kHz
300
fA/√Hz
PSRR
No Load
90
dB
NOISE CHARACTERISTICS
Total Harmonic Distortion plus Noise
Input Referred Voltage Noise
Input Referred Current Noise
SUPPLY CHARACTERISTICS
Power Supply Rejection Ratio
67
64
Power Supply Quiescent Current
IDD
Per channel, no load
48
70
mA
10. Performance guaranteed over the indicated operating temperature range by design and/or characterization.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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NCS20081, NCV20081, NCS20082, NCV20082, NCS20084, NCV20084
TYPICAL PERFORMANCE CHARACTERISTICS
TA = 25°C, RL ≥ 10 kW, VCM = VOUT = mid−supply unless otherwise specified
60
60
VS = 3.3 V
50
T = 25°C
40
T = −40°C
20
40
20
10
10
0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
−40 −20
5.5
5.0
40
60
80
100
120 140
Figure 2. Quiescent Current per Channel vs.
Supply Voltage
Figure 3. Quiescent Current vs. Temperature
0.8
T = −40°C
0.6
VS = 1.8 V
0.7
OFFSET VOLTAGE (mV)
OFFSET VOLTAGE (mV)
20
TEMPERATURE (°C)
0.7
T = 25°C
0.5
0.4
T = 125°C
0.3
0.2
VS = 3.3 V
0.6
VS = 5.5 V
0.5
0.4
0.3
0.2
0.1
0.1
0
−40 −20
0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.5
5.0
0
20
40
60
80
100
120 140
SUPPLY VOLTAGE (V)
TEMPERATURE (°C)
Figure 4. Offset Voltage vs. Supply Voltage
Figure 5. Offset Voltage vs. Temperature
140
4
VS = 5.5 V
10 units
180
120
Gain
2
100
1
80
GAIN (dB)
OFFSET VOLTAGE (mV)
0
SUPPLY VOLTAGE (V)
0.8
3
VS = 1.8 V
30
0
−1
135
Phase Margin
60
40
RL = 10 kW
CL = 15 pF
T = 25°C
20
−2
−3
0
−4
−2.75 −2.00 −1.25
45
−20
−0.50
0
0.50
1.25
2.00
1
2.75
90
10
100
1k
10k
100k
1M
0
10M 100M
COMMON MODE VOLTAGE (V)
FREQUENCY (Hz)
Figure 6. Offset Voltage vs. Common Mode
Voltage
Figure 7. Open−loop Gain and Phase Margin
vs. Frequency
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8
PHASE MARGIN (°)
30
50 VS = 5.5 V
SUPPLY CURRENT (mA)
SUPPLY CURRENT (mA)
T = 125°C
NCS20081, NCV20081, NCS20082, NCV20082, NCS20084, NCV20084
TYPICAL PERFORMANCE CHARACTERISTICS
TA = 25°C, RL ≥ 10 kW, VCM = VOUT = mid−supply unless otherwise specified
60
100
VS = 5.5 V
RL = 10 kW
T = 25°C
VS = 5.5 V
fIN = 1 kHz
AV = 1
10
40
THD+N (%)
PHASE MARGIN (°)
50
30
1
0.1
20
0.01
10
0.001
0
0.0001
0
100
200
300
400
500
0.01
0.1
1
CAPACITIVE LOAD (pF)
OUTPUT VOLTAGE (Vpp)
Figure 8. Phase Margin vs. Capacitive Load
Figure 9. THD + N vs. Output Voltage
600
1
AV = 1
VOLTAGE NOISE (nV/√Hz)
VS = 5.5 V
THD+N (%)
VS = 1.8 V
0.1
VS = 3.3 V
VS = 5.5 V
0.01
0.001
400
300
200
100
0
10
100
1k
10k
100k
1
10
100
1k
10k
100k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 10. THD + N vs. Frequency
Figure 11. Input Voltage Noise vs. Frequency
120
900
VS = 5.5 V
800
VS = 5.5 V, PSRR+
100
VS = 5.5 V, PSRR−
700
600
PSRR (dB)
CURRENT NOISE (fA/√Hz)
500
500
400
300
80
VS = 1.8 V, PSRR+
60 VS = 1.8 V, PSRR−
40
200
20
100
0
0
1
10
100
1k
10k
100k
10
100
1k
10k
100k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 12. Input Current Noise vs. Frequency
Figure 13. PSRR vs. Frequency
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9
1M
NCS20081, NCV20081, NCS20082, NCV20082, NCS20084, NCV20084
TYPICAL PERFORMANCE CHARACTERISTICS
TA = 25°C, RL ≥ 10 kW, VCM = VOUT = mid−supply unless otherwise specified
120
500
OUTPUT VOLTAGE TO POSITIVE
RAIL (mV)
AV = 1
VS = 5.5 V
100
CMRR (dB)
VS = 3.3 V
80
VS = 1.8 V
60
40
20
0
100
1k
10k
100k
300
200
VS = 3.3 V
100
VS = 5.5 V
1M
0
2
4
6
8
10
12
FREQUENCY (Hz)
OUTPUT CURRENT (mA)
Figure 14. CMRR vs. Frequency
Figure 15. Output Voltage High to Rail
500
0.10
VS = 1.8 V
Input
CL = 10 pF
CL = 100 pF
0.08
400
0.06
300
VOLTAGE (V)
OUTPUT VOLTAGE TO NEGATIVE RAIL (mV)
400
0
10
VS = 3.3 V
200
VS = 5.5 V
0.04
0.02
0
−0.02
−0.04
100
−0.06
0
0
2.5
7.5
5.0
12.5
10.0
15.0
−0.08
−0.10
−2
−1
0
1
2
3
4
5
OUTPUT CURRENT (mA)
TIME (ms)
Figure 16. Output Voltage Low to Rail
Figure 17. Non−Inverting Small Signal
Transient Response
0.10
6
1.0
Input
CL = 10 pF
CL = 100 pF
0.08
0.06
Input
Output
0.8
0.6
0.04
VOLTAGE (V)
VOLTAGE (V)
VS = 1.8 V
0.02
0
−0.02
−0.04
0.4
0.2
0
−0.2
−0.4
−0.06
−0.6
−0.08
−0.10
−2
−0.8
−1.0
−5.0 −2.5
−1
0
1
2
3
4
5
6
0
2.5
5.0
7.5
10.0 12.5 15.0 17.5
TIME (ms)
TIME (ms)
Figure 18. Inverting Small Signal Transient
Response
Figure 19. Non−Inverting Large Signal
Transient Response
www.onsemi.com
10
NCS20081, NCV20081, NCS20082, NCV20082, NCS20084, NCV20084
TYPICAL PERFORMANCE CHARACTERISTICS
TA = 25°C, RL ≥ 10 kW, VCM = VOUT = mid−supply unless otherwise specified
2.0
600
Input
Output
1.5
500
CURRENT (pA)
VOLTAGE (V)
1.0
0.5
0
−0.5
−1.0
−2.0
−2.5
0
2.5
5.0
7.5
200
100
IOS
−100
−40 −20
10.0 12.5 15.0 17.5 20.0
0
20
40
60
80
100
120 140
TIME (ms)
TEMPERATURE (°C)
Figure 20. Inverting Large Signal Transient
Response
Figure 21. Input Bias and Offset Current vs.
Temperature
6
6
4
4
IIB+
2
VOLTAGE (mV)
CURRENT (pA)
IIB−
300
0
−1.5
IIB−
0
IOS
−2
2
0
−2
−4
−4
−6
−6
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
0
1
2
3
4
5
6
7
8
COMMON MODE VOLTAGE (V)
TIME (s)
Figure 22. Input Bias Current vs. Common
Mode Voltage
Figure 23. 0.1 Hz to 10 Hz Noise
−60
9
10
10k
OUTPUT IMPEDANCE (W)
CHANNEL SEPARATION (dB)
IIB+
400
−80
−100
−120
AV = 1
1k
VS = 1.8 V
100
10
VS = 5.5 V
1
0.1
0.01
−140
100
1k
10k
100k
1M
10
10M
100
1k
10k
100k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 24. Channel Separation vs. Frequency
Figure 25. Output Impedance vs. Frequency
www.onsemi.com
11
1M
NCS20081, NCV20081, NCS20082, NCV20082, NCS20084, NCV20084
TYPICAL PERFORMANCE CHARACTERISTICS
TA = 25°C, RL ≥ 10 kW, VCM = VOUT = mid−supply unless otherwise specified
0.6
SLEW RATE (V/ms)
0.5
0.4
SR+
SR−
0.3
0.2
0.1
0
−40 −20
0
20
40
60
80
100
120
TEMPERATURE (°C)
Figure 26. Slew Rate vs. Temperature
www.onsemi.com
12
140
NCS20081, NCV20081, NCS20082, NCV20082, NCS20084, NCV20084
PACKAGE DIMENSIONS
SC−88A (SC−70−5/SOT−353)
CASE 419A−02
ISSUE L
A
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419A−01 OBSOLETE. NEW STANDARD
419A−02.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
G
5
4
−B−
S
1
2
DIM
A
B
C
D
G
H
J
K
N
S
3
D 5 PL
0.2 (0.008)
M
B
M
N
J
C
K
H
SOLDER FOOTPRINT
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
www.onsemi.com
13
SCALE 20:1
mm Ǔ
ǒinches
INCHES
MIN
MAX
0.071
0.087
0.045
0.053
0.031
0.043
0.004
0.012
0.026 BSC
--0.004
0.004
0.010
0.004
0.012
0.008 REF
0.079
0.087
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.10
0.10
0.30
0.65 BSC
--0.10
0.10
0.25
0.10
0.30
0.20 REF
2.00
2.20
NCS20081, NCV20081, NCS20082, NCV20082, NCS20084, NCV20084
PACKAGE DIMENSIONS
TSOP−5
CASE 483
ISSUE L
NOTE 5
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT
EXCEED 0.15 PER SIDE. DIMENSION A.
5. OPTIONAL CONSTRUCTION: AN ADDITIONAL
TRIMMED LEAD IS ALLOWED IN THIS LOCATION.
TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2
FROM BODY.
D 5X
0.20 C A B
0.10 T
M
2X
0.20 T
B
5
1
4
2
S
3
K
B
DETAIL Z
G
A
A
TOP VIEW
DIM
A
B
C
D
G
H
J
K
M
S
DETAIL Z
J
C
0.05
H
SIDE VIEW
C
SEATING
PLANE
END VIEW
MILLIMETERS
MIN
MAX
3.00 BSC
1.50 BSC
0.90
1.10
0.25
0.50
0.95 BSC
0.01
0.10
0.10
0.26
0.20
0.60
0_
10 _
2.50
3.00
SOLDERING FOOTPRINT*
0.95
0.037
1.9
0.074
2.4
0.094
1.0
0.039
0.7
0.028
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
14
NCS20081, NCV20081, NCS20082, NCV20082, NCS20084, NCV20084
PACKAGE DIMENSIONS
UDFN6 1.6x1.6, 0.5P
CASE 517AP
ISSUE O
2X
0.10 C
PIN ONE
REFERENCE
2X
0.10 C
ÉÉ
ÉÉ
ÉÉ
E
DETAIL A
OPTIONAL
CONSTRUCTION
EXPOSED Cu
(A3)
DETAIL B
A
0.05 C
A1
DETAIL A
6X
ÉÉÉ
ÉÉÉ
DIM
A
A1
A3
b
D
E
e
D2
E2
K
L
L1
MOLD CMPD
A3
DETAIL B
OPTIONAL
CONSTRUCTION
0.05 C
SIDE VIEW
L
L1
TOP VIEW
6X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.30 mm FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
A
B
D
C
A1
SEATING
PLANE
SOLDERMASK DEFINED
MOUNTING FOOTPRINT*
D2
L
1
MILLIMETERS
MIN
MAX
0.45
0.55
0.00
0.05
0.13 REF
0.20
0.30
1.60 BSC
1.60 BSC
0.50 BSC
1.10
1.30
0.45
0.65
0.20
−−−
0.20
0.40
0.00
0.15
1.26
3
E2
6X
6X
K
6
5
e
BOTTOM VIEW
0.52
6X
0.61 1.90
b
0.10 C A B
0.05 C
1
NOTE 3
0.50 PITCH
6X
0.32
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
15
NCS20081, NCV20081, NCS20082, NCV20082, NCS20084, NCV20084
PACKAGE DIMENSIONS
Micro8t
CASE 846A−02
ISSUE J
D
HE
PIN 1 ID
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE
BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED
0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE.
5. 846A-01 OBSOLETE, NEW STANDARD 846A-02.
E
b 8 PL
0.08 (0.003)
−T−
DIM
A
A1
b
c
D
E
e
L
HE
e
M
T B
S
A
S
SEATING
PLANE
A
0.038 (0.0015)
A1
MILLIMETERS
NOM
MAX
−−
1.10
0.08
0.15
0.33
0.40
0.18
0.23
3.00
3.10
3.00
3.10
0.65 BSC
0.40
0.55
0.70
4.75
4.90
5.05
MIN
−−
0.05
0.25
0.13
2.90
2.90
L
c
RECOMMENDED
SOLDERING FOOTPRINT*
8X
8X
0.48
0.80
5.25
0.65
PITCH
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
16
INCHES
NOM
−−
0.003
0.013
0.007
0.118
0.118
0.026 BSC
0.021
0.016
0.187
0.193
MIN
−−
0.002
0.010
0.005
0.114
0.114
MAX
0.043
0.006
0.016
0.009
0.122
0.122
0.028
0.199
NCS20081, NCV20081, NCS20082, NCV20082, NCS20084, NCV20084
PACKAGE DIMENSIONS
SOIC−8 NB
CASE 751−07
ISSUE AK
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
−X−
A
8
5
S
B
0.25 (0.010)
M
Y
M
1
4
K
−Y−
G
C
N
DIM
A
B
C
D
G
H
J
K
M
N
S
X 45 _
SEATING
PLANE
−Z−
0.10 (0.004)
H
M
D
0.25 (0.010)
M
Z Y
S
X
J
S
STYLE 11:
PIN 1. SOURCE 1
2. GATE 1
3. SOURCE 2
4. GATE 2
5. DRAIN 2
6. DRAIN 2
7. DRAIN 1
8. DRAIN 1
SOLDERING FOOTPRINT*
1.52
0.060
7.0
0.275
4.0
0.155
0.6
0.024
1.270
0.050
SCALE 6:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
17
MILLIMETERS
MIN
MAX
4.80
5.00
3.80
4.00
1.35
1.75
0.33
0.51
1.27 BSC
0.10
0.25
0.19
0.25
0.40
1.27
0_
8_
0.25
0.50
5.80
6.20
INCHES
MIN
MAX
0.189
0.197
0.150
0.157
0.053
0.069
0.013
0.020
0.050 BSC
0.004
0.010
0.007
0.010
0.016
0.050
0 _
8 _
0.010
0.020
0.228
0.244
NCS20081, NCV20081, NCS20082, NCV20082, NCS20084, NCV20084
PACKAGE DIMENSIONS
TSSOP−8
CASE 948S
ISSUE C
8x
0.20 (0.008) T U
K REF
0.10 (0.004)
S
2X
L/2
8
B
−U−
1
PIN 1
IDENT
S
T U
S
5
L
0.20 (0.008) T U
M
J J1
4
V
ÉÉÉÉ
ÉÉÉÉ
ÇÇÇÇ
ÉÉÉÉ
ÇÇÇÇ
K1
K
A
−V−
SECTION N−N
−W−
C
0.076 (0.003)
D
−T− SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH.
PROTRUSIONS OR GATE BURRS. MOLD FLASH
OR GATE BURRS SHALL NOT EXCEED 0.15
(0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD
FLASH OR PROTRUSION. INTERLEAD FLASH OR
PROTRUSION SHALL NOT EXCEED 0.25 (0.010)
PER SIDE.
5. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
6. DIMENSION A AND B ARE TO BE DETERMINED
AT DATUM PLANE -W-.
S
DETAIL E
G
0.25 (0.010)
N
M
N
F
DETAIL E
www.onsemi.com
18
DIM
A
B
C
D
F
G
J
J1
K
K1
L
M
MILLIMETERS
MIN
MAX
2.90
3.10
4.30
4.50
--1.10
0.05
0.15
0.50
0.70
0.65 BSC
0.09
0.20
0.09
0.16
0.19
0.30
0.19
0.25
6.40 BSC
0_
8_
INCHES
MIN
MAX
0.114
0.122
0.169
0.177
--0.043
0.002
0.006
0.020
0.028
0.026 BSC
0.004
0.008
0.004
0.006
0.007
0.012
0.007
0.010
0.252 BSC
0_
8_
NCS20081, NCV20081, NCS20082, NCV20082, NCS20084, NCV20084
PACKAGE DIMENSIONS
SOIC−14 NB
CASE 751A−03
ISSUE K
D
A
B
14
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE PROTRUSION
SHALL BE 0.13 TOTAL IN EXCESS OF AT
MAXIMUM MATERIAL CONDITION.
4. DIMENSIONS D AND E DO NOT INCLUDE
MOLD PROTRUSIONS.
5. MAXIMUM MOLD PROTRUSION 0.15 PER
SIDE.
8
A3
E
H
L
1
0.25
M
DETAIL A
7
B
13X
M
DIM
A
A1
A3
b
D
E
e
H
h
L
M
b
0.25
M
C A
S
B
S
X 45 _
M
A1
e
DETAIL A
h
A
C
SEATING
PLANE
SOLDERING FOOTPRINT*
6.50
14X
1.18
1
1.27
PITCH
14X
0.58
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
19
MILLIMETERS
MIN
MAX
1.35
1.75
0.10
0.25
0.19
0.25
0.35
0.49
8.55
8.75
3.80
4.00
1.27 BSC
5.80
6.20
0.25
0.50
0.40
1.25
0_
7_
INCHES
MIN
MAX
0.054 0.068
0.004 0.010
0.008 0.010
0.014 0.019
0.337 0.344
0.150 0.157
0.050 BSC
0.228 0.244
0.010 0.019
0.016 0.049
0_
7_
NCS20081, NCV20081, NCS20082, NCV20082, NCS20084, NCV20084
PACKAGE DIMENSIONS
TSSOP−14
CASE 948G
ISSUE B
14X K REF
0.10 (0.004)
0.15 (0.006) T U
T U
M
V
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MOLD FLASH OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL
NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.08 (0.003) TOTAL
IN EXCESS OF THE K DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE −W−.
S
S
N
2X
14
L/2
0.25 (0.010)
8
M
B
−U−
L
PIN 1
IDENT.
F
7
1
0.15 (0.006) T U
N
S
DETAIL E
K
A
−V−
ÉÉÉ
ÇÇÇ
ÇÇÇ
ÉÉÉ
K1
J J1
SECTION N−N
−W−
C
0.10 (0.004)
−T− SEATING
PLANE
D
H
G
DIM
A
B
C
D
F
G
H
J
J1
K
K1
L
M
DETAIL E
MILLIMETERS
INCHES
MIN
MAX
MIN MAX
4.90
5.10 0.193 0.200
4.30
4.50 0.169 0.177
−−−
1.20
−−− 0.047
0.05
0.15 0.002 0.006
0.50
0.75 0.020 0.030
0.65 BSC
0.026 BSC
0.50
0.60 0.020 0.024
0.09
0.20 0.004 0.008
0.09
0.16 0.004 0.006
0.19
0.30 0.007 0.012
0.19
0.25 0.007 0.010
6.40 BSC
0.252 BSC
0_
8_
0_
8_
SOLDERING FOOTPRINT
7.06
1
0.65
PITCH
14X
0.36
14X
1.26
DIMENSIONS: MILLIMETERS
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