Infineon IKCM20R60GD Control integrated power system Datasheet

C o ntrol In t eg ra t ed P Owe r
Sys te m (C IPOS™)
I KCM 20R 6 0GD
Datasheet
For Power Management Application
1
Ver. 1.0, 2015-06-01
CIPOS™ IKCM20R60GD
Table of Contents
CIPOS™ Control Integrated POwer System ........................................................................................................ 3
Features .............................................................................................................................................................. 3
Target Applications ........................................................................................................................................... 3
Description ......................................................................................................................................................... 3
System Configuration ....................................................................................................................................... 3
Pin Configuration .................................................................................................................................................... 4
Internal Electrical Schematic ................................................................................................................................. 4
Pin Assignment ....................................................................................................................................................... 5
Pin Description .................................................................................................................................................. 5
HIN(A, B) and LIN(A, B) (IGBT control pins, Pin 7 - 10) ................................................................................... 5
VFO (Fault-output, Pin 12) ................................................................................................................................ 6
ITRIP (Over current detection function, Pin 13) ................................................................................................ 6
VDD, VSS (Low side control supply and reference, Pin 11, 14) ....................................................................... 6
VB(A, B) and VS(A, B) (High side supplies, Pin 3 - 6) ...................................................................................... 6
NL (IGBT emitter, Pin 17) .................................................................................................................................. 6
NH (Diode anode, Pin 18) ................................................................................................................................. 6
P (Positive bus input voltage, Pin 23)................................................................................................................ 6
Absolute Maximum Ratings................................................................................................................................... 7
Module Section .................................................................................................................................................. 7
Inverter Section.................................................................................................................................................. 7
Control Section .................................................................................................................................................. 7
Recommended Operation Conditions .................................................................................................................. 8
Dynamic Parameters ............................................................................................................................................ 10
Bootstrap Parameters .......................................................................................................................................... 10
Thermistor ............................................................................................................................................................. 11
Mechanical Characteristics and Ratings............................................................................................................ 11
Circuit of a Typical Application ........................................................................................................................... 12
Switching Times Definition .................................................................................................................................. 12
Electrical characteristic ....................................................................................................................................... 13
Package Outline .................................................................................................................................................... 14
Datasheet
2
Ver. 1.0, 2015-06-01
CIPOS™ IKCM20R60GD
CIPOS™
Control Integrated POwer System
Dual In-Line Intelligent Power Module
Two Phase Switched Reluctance Drives 600V / 20A
Features
Description
Dual In-Line molded module
The CIPOS™ module family offers the chance for
integrating various power and control components
to increase reliability, optimize PCB size and system
costs.
• TrenchStop® IGBTs
• Rugged SOI gate driver technology with stability
against transient and negative voltage
• Allowable negative VS potential up to -11V for
signal transmission at VBS=15V
• Integrated bootstrap functionality
• Over current shutdown
• Under-voltage lockout at all channels
• All of 4 switches turn off during protection
• Lead-free terminal plating; RoHS compliant
• Very low thermal resistance due to DCB
• Temperature monitor
It is designed to control two phase switched
reluctance motors in variable speed drives for
applications like a vacuum cleaner. The package
concept is specially adapted to power applications,
which need good thermal conduction and electrical
isolation, but also EMI-save control and overload
protection.
®
TrenchStop IGBTs and anti parallel diodes are
combined with an optimized SOI gate driver for
excellent electrical performance.
System Configuration
• Two phase switched reluctance drive with
TrenchStop® IGBTs
Target Applications
• Two Phase Switched Reluctance Drive
• SOI gate driver
• Thermistor
• Pin-to-heatsink creepage distance typ. 1.6mm
Datasheet
3
Ver. 1.0, 2015-06-01
CIPOS™ IKCM20R60GD
Pin Configuration
Bottom View
(24) NC
(1) NC
(2) NC
(23) P
(3) VS(A)
(4) VB(A)
(22) HA
(5) VS(B)
(6) VB(B)
(21) HB
(7) HIN(A)
(8) HIN(B)
(9) LIN(A)
(10) LIN(B)
(11) VDD
(12) VFO
(13) ITRIP
(14) VSS
(15) NTC
(20) LA
(19) LB
(18) NH
(16) NC
(17) NL
Figure 1: Pin configuration
Internal Electrical Schematic
NC (24)
(1) NC
(2) NC
P (23)
VB1
HOA
RBS1
HA (22)
VSA
(3) VS(A)
(4) VB(A)
VB2
RBS2
HOB
HB (21)
VSB
(5) VS(B)
(6) VB(B)
LA (20)
(7) HIN(A)
HINA
(8) HIN(B)
HINB
(9) LIN(A)
(10) LIN(B)
LINA
(11) VDD
VDD
(12) VFO
VFO
(13) ITRIP
ITRIP
(14) VSS
VSS
(15) NTC
LINB
LB (19)
LOA
NH (18)
LOB
(16) NC
NL (17)
Figure 2: Internal schematic
Datasheet
4
Ver. 1.0, 2015-06-01
CIPOS™ IKCM20R60GD
Pin Assignment
Pin Number
Pin Name
Pin Description
1
NC
No Connection
2
NC
No Connection
3
VS(A)
A-phase high side floating IC supply offset voltage
4
VB(A)
A-phase high side floating IC supply voltage
5
VS(B)
B-phase high side floating IC supply offset voltage
6
VB(B)
B-phase high side floating IC supply voltage
7
HIN(A)
A phase high side gate driver input
8
HIN(B)
B phase high side gate driver input
9
LIN(A)
A phase low side gate driver input
10
LIN(B)
B phase low side gate driver input
11
VDD
Low side control supply
12
VFO
Fault output
13
ITRIP
Over current shutdown input
14
VSS
Low side control negative supply
15
NTC
Temperature monitor
16
NC
No Connection
17
NL
LA, LB IGBT emitter
18
NH
HA, HB diode anode
19
LB
LB phase output
20
LA
LA phase output
21
HB
HB phase output
22
HA
HA phase output
23
P
Positive bus input voltage
24
NC
No Connection
Pin Description
CIPOS
HIN(A, B) and LIN(A, B) (IGBT control pins,
Pin 7 - 10)
These pins are positive logic and they are
responsible for the control of the integrated IGBT.
The Schmitt-trigger input thresholds of them are
such to guarantee LSTTL and CMOS compatibility
down to 3.3V controller outputs. Pull-down resistor
of about 5kΩ is internally provided to pre-bias inputs
during supply start-up and a zener clamp is
provided for pin protection purposes. Input Schmitttrigger and noise filter provide beneficial noise
rejection to short input pulses.
Figure 3: Input pin structure
The noise filter suppresses control pulses which are
below the filter time tFILIN. The filter acts according to
Figure 4.
Figure 4: Input filter timing diagram
Datasheet
Schmitt-Trigger
HINx
LINx
≈ 5kΩ
UZ=10.5V
VSS
a)
5
tFILIN
INPUT NOISE
FILTER
SWITCH LEVEL
VIH; VIL
b)
tFILIN
HIN
LIN
HIN
LIN
HO
LO
HO
LO
high
low
Ver. 1.0, 2015-06-01
CIPOS™ IKCM20R60GD
VS(A, B) provide a high robustness against
negative voltage in respect of VSS of -50V
transiently. This ensures very stable designs even
under rough conditions.
It is recommended for proper work of CIPOS™ not
to provide input pulse-width lower than 1us.
VFO (Fault-output, Pin 12)
The VFO pin indicates a module failure in case of
under voltage at pin VDD or in case of triggered
over current detection at ITRIP.
CIPOS
VDD
VFO
VSS
NL (IGBT emitter, Pin 17)
The low side IGBT emitters are available for current
measurements. It is recommended to keep the
connection to pin VSS as short as possible in order
to avoid unnecessary inductive voltage drops.
RON,FLT
From ITRIP - Latch
NH (Diode anode, Pin 18)
The low side anodes of the integrated diodes are
connected.
1
From UV detection
P (Positive bus input voltage, Pin 23)
The high sides of IGBT are connected to the bus
voltage. It is noted that the bus voltage does not
exceed 450 V.
Figure 5: Internal circuit at pin VFO
ITRIP (Over current detection function, Pin 13)
CIPOS™ provides an over current detection
function by connecting the ITRIP input with the
motor current feedback. The ITRIP comparator
threshold (typ. 0.47V) is referenced to VSS ground.
A input noise filter (typ: tITRIPMIN = 530ns) prevents
the driver to detect false over-current events.
Over current detection generates a shut down of all
outputs of the gate driver after the shutdown
propagation delay of typically 1000ns.
The fault-clear time is set to typical 65us.
VDD, VSS (Low side control supply and
reference, Pin 11, 14)
VDD is the low side supply and it provides power
both to input logic and to low side output power
stage. Input logic is referenced to VSS ground.
The under-voltage circuit enables the device to
operate at power on when a supply voltage of at
least a typical voltage of VDDUV+ = 12.1V is present.
The IC shuts down all the gate drivers’
outputs, when the VDD supply voltage is
VDDUV- = 10.4V. This prevents the external
switches from critically low gate voltage
during on-state and therefore from excessive
dissipation.
power
below
power
levels
power
VB(A, B) and VS(A, B) (High side supplies,
Pin 3 - 6)
VB to VS is the high side supply voltage. The high
side circuit can float with respect to VSS following
the external high side power device emitter voltage.
Due to the low power consumption, the floating
driver stage is supplied by integrated bootstrap
circuit.
The under-voltage detection operates with a rising
supply threshold of typical VBSUV+ = 12.1V and a
falling threshold of VBSUV- = 10.4V.
Datasheet
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Ver. 1.0, 2015-06-01
CIPOS™ IKCM20R60GD
Absolute Maximum Ratings
(VDD = 15V and TJ = 25°C, if not stated otherwise)
Module Section
Description
Condition
Storage temperature range
Insulation test voltage
RMS, f=60Hz, t =1min
Operating case temperature range
Refer to Figure 6
Symbol
Value
Unit
min
max
Tstg
-40
125
°C
VISOL
2000
-
V
TC
-40
100
°C
Inverter Section
Description
Condition
Symbol
Value
min
max
Unit
Max. blocking voltage
IC=250µA
VCES
600
-
V
DC link supply voltage of P-N
Applied between P-N
VPN
-
450
V
DC link supply voltage (surge) of P-N
Applied between P-N
VPN(surge)
-
500
V
Output current
TC = 25°C, TJ ≤ 150°C
IC
-20
20
A
Maximum peak output current
TC = 25°C,
less than 1 ms
IC
-40
40
A
Short circuit withstand time 1
VDC ≤ 400V,
TJ ≤ 150°C
tSC
-
5
µs
Power dissipation per IGBT
Ptot
-
73.0
W
Operating junction temperature range
TJ
-40
150
°C
Single IGBT thermal resistance,
junction-case
RthJC
-
1.71
K/W
Single diode thermal resistance,
junction-case
RthJCD
-
3.32
K/W
Control Section
Description
Condition
Value
min
max
Unit
Module supply voltage
VDD
-1
20
V
High side floating supply voltage
(VB vs. VS)
VBS
-1
20
V
VIN, VITRIP
-1
10
V
fPWM
-
20
kHz
Input voltage
LIN, HIN, ITRIP
Switching frequency
1
Symbol
Allowed number of short circuits: <1000; time between short circuits: >1s.
Datasheet
7
Ver. 1.0, 2015-06-01
CIPOS™ IKCM20R60GD
Recommended Operation Conditions
All voltages are absolute voltages referenced to VSS -potential unless otherwise specified.
Description
Symbol
Value
min
typ
max
Unit
DC link supply voltage of P-N
VPN
0
-
400
V
High side floating supply voltage (VB vs. VS)
VBS
13.5
-
18.5
V
Low side supply voltage
VDD
14.5
16
18.5
V
Control supply variation
ΔVBS
ΔVDD
-1
-1
-
1
1
V/µs
Logic input voltages LIN,HIN,ITRIP
VIN
VITRIP
0
0
-
5
5
V
Between VSS - N (including surge)
VSS
-5
-
5
V
Figure 6: TC measurement point 1
1
Any measurement except for the specified point in figure 6 is not relevant for the temperature verification and
brings wrong or different information.
Datasheet
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Ver. 1.0, 2015-06-01
CIPOS™ IKCM20R60GD
Static Parameters
(VDD = 15V and TJ = 25°C, if not stated otherwise)
Description
Condition
Symbol
Value
Unit
min
typ
max
VCE(sat)
-
1.55
1.85
2.1
-
V
VF
-
1.75
1.8
2.45
-
V
ICES
-
-
1
mA
Logic "1" input voltage (LIN,HIN)
VIH
-
2.1
2.5
V
Logic "0" input voltage (LIN,HIN)
VIL
0.7
0.9
-
V
ITRIP positive going threshold
VIT,TH+
400
470
540
mV
ITRIP input hysteresis
VIT,HYS
40
70
-
mV
VDD and VBS supply under voltage
positive going threshold
VDDUV+
VBSUV+
10.8
12.1
13.0
V
VDD and VBS supply under voltage
negative going threshold
VDDUVVBSUV-
9.5
10.4
11.2
V
VDD and VBS supply under voltage
lockout hysteresis
VDDUVH
VBSUVH
1.0
1.7
-
V
Collector-Emitter saturation voltage
Emitter-Collector forward voltage
Collector-Emitter leakage current
IC = 15A,
Tj = 25°C
150°C
IC= -15A,
Tj = 25°C
150°C
VCE = 600V
Input clamp voltage
(HIN, LIN, ITRIP)
Iin=4mA
VINCLAMP
9.0
10.1
12.5
V
Quiescent VBx supply current
(VBx only)
HIN = 0V
IQBS
-
300
500
µA
Quiescent VDD supply current
(VDD only)
LIN = 0V, HINX=5V
IQDD
-
370
900
µA
Input bias current
VIN = 5V
IIN+
-
1
1.5
mA
Input bias current
VIN = 0V
IIN-
-
2
-
µA
ITRIP input bias current
VITRIP = 5V
IITRIP+
-
65
150
µA
VFO input bias current
VFO = 5V, VITRIP = 0V
IFO
-
2
-
nA
VFO output voltage
IFO = 10mA, VITRIP = 1V
VFO
-
0.5
-
V
Datasheet
9
Ver. 1.0, 2015-06-01
CIPOS™ IKCM20R60GD
Dynamic Parameters
(VDD = 15V and TJ = 25°C, if not stated otherwise)
Condition
Description
Symbol
typ
max
ton
-
620
-
ns
tr
-
30
-
ns
tc(on)
-
200
-
ns
trr
-
130
-
ns
toff
-
910
-
ns
tf
-
75
-
ns
tc(off)
-
120
-
ns
tSCP
-
1200
-
ns
tITRIPmin
-
530
-
ns
tFILIN
-
290
-
ns
tFLTCLR
40
-
-
µs
Eon
-
470
610
-
µJ
Eoff
-
270
360
-
µJ
Erec
-
55 105
-
µJ
VLIN,HIN = 5V,
Iout = 15A,
VDC = 300V
Turn-on switching time
Reverse recovery time
Turn-off propagation delay time
Turn-off fall time
Turn-off switching time
VLIN,HIN = 0V,
Iout = 15A,
VDC = 300V
Short circuit propagation delay time
From VIT,TH+ to 10% ISC
Input filter time ITRIP
VITRIP = 1V
Input filter time at LIN, HIN for turn
on and off
VLIN,HIN = 0V & 5V
Fault clear time after ITRIP-fault
VITRIP = 1V
IGBT turn-on energy (includes
reverse recovery of diode)
VDC = 300V,
VDC = 300V,
IGBT turn-off energy
Tj = 25°C
IC = 15A
150°C
Tj = 25°C
IC = 15A
VDC = 300V,
Diode recovery energy
150°C
Tj = 25°C
IC = 15A
Unit
min
Turn-on propagation delay time
Turn-on rise time
Value
150°C
Bootstrap Parameters
(TJ = 25°C, if not stated otherwise)
Description
Condition
Symbol
Repetitive peak reverse
voltage
1
Value
min
VRRM
600
-
Bootstrap resistance of
U-phase 1
VS2 or VS3 = 300V, TJ = 25°C
VS2 and VS3 = 0V, TJ = 25°C
VS2 or VS3 = 300V, TJ = 125°C
VS2 and VS3 = 0V, TJ = 125°C
RBS1
Reverse recovery time
IF = 0.6A, di/dt = 80A/µs
Forward voltage drop
IF = 20mA, VS2 and VS3 = 0V
typ
max
Unit
V
35
40
50
65
-
Ω
trr_BS
50
-
ns
VF_BS
2.6
-
V
RBS2 and RBS3 have same values to RBS1.
Datasheet
10
Ver. 1.0, 2015-06-01
CIPOS™ IKCM20R60GD
Thermistor
Condition
Description
Resistor
Unit
min
typ
max
RNTC
-
85
-
kΩ
B(25/100)
-
4092
-
K
TNTC = 25°C
B-constant of NTC
(Negative temperature coefficient)
Value
Symbol
35
3000
2500
2000
1500
Min.
Typ.
Max.
30
Thermistor resistance [kΩ ]
Thermistor resistance [kΩ ]
3500
1000
25
20
15
10
5
0
50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 125 130
Thermistor temperature [℃]
500
0
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130
Thermistor temperature [℃]
Figure 7: Thermistor resistance – temperature curve and table
(For more information, please refer to the application note ‘AN CIPOS mini-1 Technical Description’)
Mechanical Characteristics and Ratings
Description
Condition
Value
min
typ
max
Unit
Mounting torque
M3 screw and washer
0.49
-
0.78
Nm
Flatness
Refer to Figure 8
-50
-
100
µm
-
6.84
-
g
Weight
Figure 8: Flatness measurement position
Datasheet
11
Ver. 1.0, 2015-06-01
CIPOS™ IKCM20R60GD
Circuit of a Typical Application
NC (24)
P (23)
(1) NC
VB1
(2) NC
RBS1
(3) VS(A)
(4) VB(A)
VB2
RBS2
HOA
VSA
HA (22)
HOB
VSB
HB (21)
2phase
SR Motor
(5) VS(B)
(6) VB(B)
LA (20)
(7) HIN(A)
Micro
Controller
HINA
(8) HIN(B)
HINB
(9) LIN(A)
LINA
(10) LIN(B)
VDD line
5 or 3.3V
line
LOA
(11) VDD
VDD
(12) VFO
NH (18)
VFO
(13) ITRIP
ITRIP
(14) VSS
VSS
(15) NTC
LOB
(16) NC
Signal
for over-circuit protection
LB (19)
LINB
NL (17)
Current sensing
Current sensing
Temperature monitor
Figure 9: Application circuit
Switching Times Definition
HINx
LINx
2.1V
0.9V
trr
toff
ton
10%
iCx
90%
90%
tf
vCEx
10%
tr
10%
10%
10%
tc(on)
tc(off)
Figure 10: Switching times definition
Datasheet
12
Ver. 1.0, 2015-06-01
CIPOS™ IKCM20R60GD
Electrical characteristic
40
TJ=25℃
20
VDD=15V
VDD=20V
15
10
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VCE(sat), Collector - Emitter voltage [V]
VDC=300V
VDD=15V
High side @TJ=25℃dd
High side @TJ=150℃d
Low side @TJ=25℃dd
Low side @TJ=150℃d
2.5
2.0
1.5
1.0
0.5
0.0
0
5
10
15
20
25
30
Ic, Collector current [A]
35
720
1.5
2.0
2.5
3.0
660
630
600
0.8
0.7
0.6
0.5
0.4
0.3
0.2
VDC=300V
VDD=15V
0.1
0
5
10
15
20
25
30
Ic, Collector current [A]
35
15
20
25
30
35
High side @TJ=25℃dd
High side @TJ=150℃d
Low side @TJ=25℃dd
Low side @TJ=150℃d
600
500
400
300
200
0
40
0
Typ. Turn on propagation delay time
trr, Reverse recovery time [ns]
High side @TJ=25℃
High side @TJ=150℃
Low side @TJ=25℃
Low side @TJ=150℃
300
250
200
150
100
50
10
15
20
25
30
Ic, Collector current [A]
35
5
10
15
20
25
30
Ic, Collector current [A]
Typ. Turn off switching time
Datasheet
35
40
500
High side @TJ=25℃dd
450
High side @TJ=150℃d
400
Low side @TJ=25℃dd
350
Low side @TJ=150℃d
2.0
2.5
3.0
3.5
VDC=300V
VDD=15V
220
200
High side @TJ=25℃dd
High side @TJ=150℃d
Low side @TJ=25℃dd
Low side @TJ=150℃d
180
160
140
d
120
100
80
60
40
20
0
5
10
15
20
25
30
35
Ic, Collector current [A]
40
VDC=300V
VDD=15V
High side @TJ=25℃
High side @TJ=150℃
Low side @TJ=25℃
Low side @TJ=150℃
1300
1200
1100
1000
900
800
700
0
5
10
15
20
25
30
35
Ic, Collector current [A]
40
1
0.1
0.01
300
250
1E-3
200
150
100
0
1.5
Typ. Turn off propagation delay time
1E-4
50
0
1.0
VF, Emitter - Collector voltage [V]
1400
40
VDC=300V
VDD=15V
550
350
0.5
10
600
VDC=300V
VDD=15V
400
5
240
0
Typ. Turn on switching time
450
5
1500
VDC=300V
VDD=15V
700
TJ=25℃
TJ=150℃
10
Typ. Emitter – Collector forward voltage
ZthJC, IGBT transient thermal resistance [K/W]
10
15
Typ. Reverse recovery energy loss
100
Ic, Collector current [A]
20
0
0.0
40
570
5
25
3.5
High side @TJ=25℃dd
High side @TJ=150℃d
Low side @TJ=25℃dd
Low side @TJ=150℃d
0.9
800
690
0
tc(off), Turn off switching time [ns]
1.0
30
1.0
0.0
tc(on), Turn on switching time [ns]
ton, Turn on propagation delay time [ns]
750
0.5
VCE(sat), Collector - Emitter voltage [V]
Typ. Turn off switching energy loss
High side @TJ=25℃dd
High side @TJ=150℃d
Low side @TJ=25℃dd
Low side @TJ=150℃d
780
5
Typ. Collector – Emitter saturation voltage
40
VDC=300V
VDD=15V
810
TJ=25℃
TJ=150℃
0
0.0
Typ. Turn on switching energy loss
840
15
Eoff, Turn off switching energy loss [mJ]
Eon, Turn on switching energy loss [mJ]
4.0
3.0
20
3.5
Typ. Collector – Emitter saturation voltage
3.5
25
10
35
IF, Emitter - Collector current [A]
25
30
Erec, Reverse recovery energy loss [uJ]
30
40
VDD=15V
35
toff, Turn off propagation delay time [ns]
35
Ic, Collector - Emitter current [A]
Ic, Collector - Emitter current [A]
40
0
5
10
15
20
25
30
Ic, Collector current [A]
Typ. Reverse recovery time
13
35
40
D : duty ratio
D=50%
D=20%
D=10%
D=5%
D=2%
Single pulse
1E-5
1E-7 1E-6 1E-5 1E-4 1E-3 0.01 0.1
tP, Pulse width [sec.]
1
10
100
IGBT transient thermal resistance at all
six IGBTs operation
Ver. 1.0, 2015-06-01
CIPOS™ IKCM20R60GD
Package Outline
Datasheet
14
Ver. 1.0, 2015-06-01
CIPOS™ IKCM20R60GD
Revision History
Major changes since the last revision
Page or Reference
Datasheet
Description of change
15
Ver. 1.0, 2015-06-01
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Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex.
Last Trademarks Update 2014-07-17
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Edition 2014-06-01
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