Eon EN25Q128-104FIP 128 megabit serial flash memory with 4kbyte uniform sector Datasheet

EN25Q128
EN25Q128
128 Megabit Serial Flash Memory with 4Kbyte Uniform Sector
FEATURES
• Software and Hardware Write Protection:
- Write Protect all or portion of memory via
software
- Enable/Disable protection with WP# pin
• Single power supply operation
- Full voltage range: 2.7-3.6 volt
• Serial Interface Architecture
- SPI Compatible: Mode 0 and Mode 3
•
-
• 128 M-bit Serial Flash
- 128 M-bit/16,384 K-byte/65,536 pages
- 256 bytes per programmable page
•
-
Standard, Dual or Quad SPI
Standard SPI: CLK, CS#, DI, DO, WP#
Dual SPI: CLK, CS#, DQ0, DQ1, WP#
Quad SPI: CLK, CS#, DQ0, DQ1, DQ2, DQ3
•
-
High performance
104MHz clock rate for Standard SPI
80MHz clock rate for two data bits
50MHz clock rate for four data bits
• Lockable 512 byte OTP security sector
• Minimum 100K endurance cycle
•
-
• Low power consumption
- 12 mA typical active current
- 1 μA typical power down current
•
-
High performance program/erase speed
Page program time: 0.8ms typical
Sector erase time: 50ms typical
Block erase time 200ms typical
Chip erase time: 45 seconds typical
Package Options
8 contact VDFN (5x6mm)
8 contact VDFN (6x8mm)
16 pins SOP 300mil body width
24 balls TFBGA (6x8mm)
All Pb-free packages are RoHS compliant
• Industrial and Automotive temperature Range
Uniform Sector Architecture:
4096 sectors of 4-Kbyte
256 blocks of 64-Kbyte
Any sector or block can be erased individually
GENERAL DESCRIPTION
The EN25Q128 is a 128 Megabit (16,384K-byte) Serial Flash memory, with advanced write protection
mechanisms. The EN25Q128 supports the standard Serial Peripheral Interface (SPI), and a high
performance Dual output as well as Dual/Quad I/O using SPI pins: Serial Clock, Chip Select, Serial
DQ0(DI), DQ1(DO), DQ2(WP#) and DQ3(NC). SPI clock frequencies of up to 80MHz are supported
allowing equivalent clock rates of 160MHz (80MHz x 2) for Dual Output when using the Dual Output
Fast Read instructions, and SPI clock frequencies of up to 50MHz are supported allowing equivalent
clock rates of 200MHz (50MHz x 4) for Quad Output when using the Quad Output Fast Read
instructions. The memory can be programmed 1 to 256 bytes at a time, using the Page Program
instruction.
The EN25Q128 is designed to allow either single Sector/Block at a time or full chip erase operation. The
EN25Q128 can be configured to protect part of the memory as the software protected mode. The
device can sustain a minimum of 100K program/erase cycles on each sector or block.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
1
©2004 Eon Silicon Solution, Inc.,
Rev. J, Issue Date: 2011/09/19
www.eonssi.com
EN25Q128
Figure.1 CONNECTION DIAGRAMS
CS#
1
8
VCC
DO (DQ1)
2
7
NC (DQ3)
WP# (DQ2)
3
6
CLK
4
5
DI (DQ0)
VSS
8 - LEAD VDFN
16 - LEAD SOP
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
2
©2004 Eon Silicon Solution, Inc.,
Rev. J, Issue Date: 2011/09/19
www.eonssi.com
EN25Q128
Top View, Balls Facing Down
24 - Ball TFBGA
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
3
©2004 Eon Silicon Solution, Inc.,
Rev. J, Issue Date: 2011/09/19
www.eonssi.com
EN25Q128
Figure 2. BLOCK DIAGRAM
Note:
1. DQ0 and DQ1 are used for Dual and Quad instructions.
2. DQ0 ~ DQ3 are used for Quad instructions.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
4
©2004 Eon Silicon Solution, Inc.,
Rev. J, Issue Date: 2011/09/19
www.eonssi.com
EN25Q128
Table 1. Pin Names
Symbol
Pin Name
CLK
Serial Clock Input
DI (DQ0)
Serial Data Input (Data Input Output 0)
DO (DQ1)
Serial Data Output (Data Input Output 1)
CS#
Chip Enable
WP# (DQ2)
Write Protect (Data Input Output 2)
NC(DQ3)
Not Connect (Data Input Output 3)
Vcc
Supply Voltage (2.7-3.6V)
Vss
Ground
NC
No Connect
*1
*1
*2
*2
Note:
1. DQ0 and DQ1 are used for Dual and Quad instructions.
2. DQ0 ~ DQ3 are used for Quad instructions.
SIGNAL DESCRIPTION
Serial Data Input, Output and IOs (DI, DO and DQ0, DQ1, DQ2, DQ3)
The EN25Q128 support standard SPI, Dual SPI and Quad SPI operation. Standard SPI instructions
use the unidirectional DI (input) pin to serially write instructions, addresses or data to the device on the
rising edge of the Serial Clock (CLK) input pin. Standard SPI also uses the unidirectional DO (output) to
read data or status from the device on the falling edge CLK.
Dual and Quad SPI instruction use the bidirectional IO pins to serially write instruction, addresses or
data to the device on the rising edge of CLK and read data or status from the device on the falling edge
of CLK.
Serial Clock (CLK)
The SPI Serial Clock Input (CLK) pin provides the timing for serial input and output operations. ("See
SPI Mode")
Chip Select (CS#)
The SPI Chip Select (CS#) pin enables and disables device operation. When CS# is high the device is
deselected and the Serial Data Output (DO, or DQ0, DQ1, DQ2 and DQ3) pins are at high impedance.
When deselected, the devices power consumption will be at standby levels unless an internal erase,
program or status register cycle is in progress. When CS# is brought low the device will be selected,
power consumption will increase to active levels and instructions can be written to and data read from
the device. After power-up, CS# must transition from high to low before a new instruction will be
accepted.
Write Protect (WP#)
The Write Protect (WP#) pin can be used to prevent the Status Register from being written. Used in
conjunction with the Status Register’s Block Protect (BP0, BP1, BP2 and BP3) bits and Status Register
Protect (SRP) bits, a portion or the entire memory array can be hardware protected. The WP# function
is only available for standard SPI and Dual SPI operation, when during Quad SPI, this pin is the Serial
Data IO (DQ2) for Quad I/O operation.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
5
©2004 Eon Silicon Solution, Inc.,
Rev. J, Issue Date: 2011/09/19
www.eonssi.com
EN25Q128
MEMORY ORGANIZATION
The memory is organized as:
z
16,777,216 bytes
z
Uniform Sector Architecture
256 blocks of 64-Kbyte
4,096 sectors of 4-Kbyte
65,536 pages (256 bytes each)
Each page can be individually programmed (bits are programmed from 1 to 0). The device is Sector,
Block or Chip Erasable but not Page Erasable.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
6
©2004 Eon Silicon Solution, Inc.,
Rev. J, Issue Date: 2011/09/19
www.eonssi.com
EN25Q128
Table 2. Uniform Block Sector Architecture ( 1/4 )
3328
D00000h
D00FFFh
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
193
192
7
….
….
….
….
….
….
….
….
….
….
E10FFFh
E0FFFFh
….
….
….
E10000h
E0F000h
….
3600
3599
….
….
….
E20FFFh
E1FFFFh
….
E20000h
E1F000h
3584
E00000h
E00FFFh
CF0000h
CEF000h
CF0FFFh
CEFFFFh
CE0000h
CDF000h
CE0FFFh
CDFFFFh
….
3296
3295
….
….
3312
3311
….
….
Address range
CFF000h
CFFFFFh
….
Sector
3327
3280
CD0000h
CD0FFFh
C2FFFFh
….
C2F000h
….
3119
3014
3103
C20000h
C1F000h
C20FFFh
C1FFFFh
….
D10FFFh
D0FFFFh
3616
3615
3088
3087
C10000h
C0F000h
C10FFFh
C0FFFFh
….
D10000h
D0F000h
….
3344
3343
….
….
D20FFFh
D1FFFFh
….
D20000h
D1F000h
E2FFFFh
….
3360
3359
194
E2F000h
….
D2FFFFh
3631
….
D2F000h
205
….
3375
206
ED0FFFh
….
DD0FFFh
….
DD0000h
….
3536
207
ED0000h
….
DE0FFFh
DDFFFFh
….
DE0000h
DDF000h
….
3552
3551
Block
3792
….
….
DF0FFFh
DEFFFFh
….
DF0000h
DEF000h
….
3568
3567
….
….
Address range
DFF000h
DFFFFFh
….
Sector
3583
224
EE0FFFh
EDFFFFh
….
F00FFFh
EE0000h
EDF000h
….
F00000h
225
3808
3807
….
3840
226
EF0FFFh
EEFFFFh
….
….
F10FFFh
F0FFFFh
….
F10000h
F0F000h
….
3856
3855
237
EF0000h
EEF000h
….
….
F20FFFh
F1FFFFh
….
….
….
….
….
F20000h
F1F000h
….
….
….
….
….
….
….
….
3872
3871
….
F2FFFFh
….
208
F2F000h
….
209
3887
….
….
210
FD0FFFh
3824
3823
….
221
FD0000h
238
Address range
EFF000h
EFFFFFh
….
222
4048
239
Sector
3839
….
223
FE0FFFh
FDFFFFh
Block
….
Block
FE0000h
FDF000h
….
240
4064
4063
….
241
FF0FFFh
FEFFFFh
….
….
242
FF0000h
FEF000h
….
253
4080
4079
….
254
Address range
FFF000h
FFFFFFh
….
255
Sector
4095
….
Block
3072
C00000h
C00FFFh
©2004 Eon Silicon Solution, Inc.,
Rev. J, Issue Date: 2011/09/19
www.eonssi.com
EN25Q128
Table 2. Uniform Block Sector Architecture ( 2/4 )
2304
900000h
900FFFh
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
129
128
8
….
….
….
….
….
….
….
….
….
….
A10FFFh
A0FFFFh
….
….
….
A10000h
A0F000h
….
2576
2575
….
….
….
A20FFFh
A1FFFFh
….
A20000h
A1F000h
2560
A00000h
A00FFFh
8F0000h
8EF000h
8F0FFFh
8EFFFFh
8E0000h
8DF000h
8E0FFFh
8DFFFFh
….
2272
2271
….
….
2288
2287
….
….
Address range
8FF000h
8FFFFFh
….
Sector
2303
2256
8D0000h
8D0FFFh
82FFFFh
….
82F000h
….
2095
2080
2079
820000h
81F000h
820FFFh
81FFFFh
….
910FFFh
90FFFFh
2592
2591
2064
2063
810000h
80F000h
810FFFh
80FFFFh
….
910000h
90F000h
….
2320
2319
….
….
920FFFh
91FFFFh
….
920000h
91F000h
A2FFFFh
….
2336
2335
130
A2F000h
….
92FFFFh
2607
….
92F000h
141
….
2351
142
AD0FFFh
….
9D0FFFh
….
9D0000h
….
2512
143
AD0000h
….
9E0FFFh
9DFFFFh
….
9E0000h
9DF000h
….
2528
2527
Block
2768
….
….
9F0FFFh
9EFFFFh
….
9F0000h
9EF000h
….
2544
2543
….
….
Address range
9FF000h
9FFFFFh
….
Sector
2559
160
AE0FFFh
ADFFFFh
….
B00FFFh
AE0000h
ADF000h
….
B00000h
161
2784
2783
….
2816
162
AF0FFFh
AEFFFFh
….
….
B10FFFh
B0FFFFh
….
B10000h
B0F000h
….
2832
2831
173
AF0000h
AEF000h
….
….
B20FFFh
B1FFFFh
….
….
….
….
….
B20000h
B1F000h
….
….
….
….
….
….
….
….
2848
2847
….
B2FFFFh
….
144
B2F000h
….
145
2863
….
….
146
BD0FFFh
2800
2799
….
157
BD0000h
174
Address range
AFF000h
AFFFFFh
….
158
3024
175
Sector
2815
….
159
BE0FFFh
BDFFFFh
Block
….
Block
BE0000h
BDF000h
….
176
3040
3039
….
177
BF0FFFh
BEFFFFh
….
….
178
BF0000h
BEF000h
….
189
3056
3055
….
190
Address range
BFF000h
BFFFFFh
….
191
Sector
3071
….
Block
2048
800000h
800FFFh
©2004 Eon Silicon Solution, Inc.,
Rev. J, Issue Date: 2011/09/19
www.eonssi.com
EN25Q128
Table 2. Uniform Block Sector Architecture ( 3/4 )
1280
500000h
500FFFh
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
65
64
9
….
….
….
….
….
….
….
….
….
….
….
….
….
….
620FFFh
61FFFFh
….
620000h
61F000h
1552
1551
….
1536
610000h
60F000h
….
600000h
610FFFh
60FFFFh
….
600FFFh
4F0000h
4EF000h
4F0FFFh
4EFFFFh
4E0000h
4DF000h
4E0FFFh
4DFFFFh
….
1248
1247
….
….
1264
1263
….
….
Address range
4FF000h
4FFFFFh
….
Sector
1279
1232
4D0000h
4D0FFFh
42FFFFh
….
42F000h
….
1071
1056
1055
420000h
41F000h
420FFFh
41FFFFh
….
510FFFh
50FFFFh
1568
1567
1040
1039
410000h
40F000h
410FFFh
40FFFFh
….
510000h
50F000h
….
1296
1295
….
….
520FFFh
51FFFFh
….
520000h
51F000h
62FFFFh
….
1312
1311
66
62F000h
….
52FFFFh
1583
….
52F000h
….
1327
77
6D0FFFh
….
5D0FFFh
….
5D0000h
….
1488
78
6D0000h
….
5E0FFFh
5DFFFFh
79
1744
….
….
5E0000h
5DF000h
….
1504
1503
….
….
….
5F0FFFh
5EFFFFh
….
5F0000h
5EF000h
….
1520
1519
Block
6E0FFFh
6DFFFFh
….
96
Address range
5FF000h
5FFFFFh
….
Sector
1535
97
6E0000h
6DF000h
….
710FFFh
70FFFFh
….
700FFFh
1760
1759
….
710000h
70F000h
….
700000h
98
6F0FFFh
6EFFFFh
….
1808
1807
….
1792
109
6F0000h
6EF000h
….
….
720FFFh
71FFFFh
….
….
….
….
….
720000h
71F000h
….
….
….
….
….
….
….
….
1824
1823
….
72FFFFh
….
80
72F000h
….
81
1839
….
….
82
7D0FFFh
1776
1775
….
93
7D0000h
110
Address range
6FF000h
6FFFFFh
….
94
2000
111
Sector
1791
….
95
7E0FFFh
7DFFFFh
Block
….
Block
7E0000h
7DF000h
….
112
2016
2015
….
113
7F0FFFh
7EFFFFh
….
….
114
7F0000h
7EF000h
….
125
2032
2031
….
126
Address range
7FF000h
7FFFFFh
….
127
Sector
2047
….
Block
1024
400000h
400FFFh
©2004 Eon Silicon Solution, Inc.,
Rev. J, Issue Date: 2011/09/19
www.eonssi.com
EN25Q128
Table 2. Uniform Block Sector Architecture ( 4/4 )
256
100000h
100FFFh
1
0
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
10
….
….
….
….
….
….
….
….
….
….
210FFFh
20FFFFh
….
….
….
210000h
20F000h
….
528
527
….
….
….
220FFFh
21FFFFh
….
220000h
21F000h
512
200000h
200FFFh
0F0000h
0EF000h
0F0FFFh
0EFFFFh
0E0000h
0DF000h
0E0FFFh
0DFFFFh
….
224
223
….
….
240
239
….
….
Address range
0FF000h
0FFFFFh
….
Sector
255
208
0D0000h
0D0FFFh
02FFFFh
….
02F000h
….
47
32
31
020000h
01F000h
020FFFh
01FFFFh
….
110FFFh
10FFFFh
544
543
16
15
010000h
00F000h
010FFFh
00FFFFh
….
110000h
10F000h
….
272
271
….
….
120FFFh
11FFFFh
….
120000h
11F000h
22FFFFh
….
288
287
2
22F000h
….
12FFFFh
559
….
12F000h
13
….
303
14
2D0FFFh
….
1D0FFFh
….
1D0000h
….
464
15
2D0000h
….
1E0FFFh
1DFFFFh
….
1E0000h
1DF000h
….
480
479
Block
720
….
….
1F0FFFh
1EFFFFh
….
1F0000h
1EF000h
….
496
495
….
….
Address range
1FF000h
1FFFFFh
….
Sector
511
32
2E0FFFh
2DFFFFh
….
300FFFh
2E0000h
2DF000h
….
300000h
736
735
….
768
33
2F0FFFh
2EFFFFh
….
….
310FFFh
30FFFFh
….
310000h
30F000h
….
784
783
34
2F0000h
2EF000h
….
….
….
320FFFh
31FFFFh
….
….
….
….
….
320000h
31F000h
….
….
….
….
….
….
….
800
799
….
32FFFFh
….
16
32F000h
….
17
815
….
….
18
3D0FFFh
45
752
751
….
29
3D0000h
46
Address range
2FF000h
2FFFFFh
….
30
976
47
Sector
767
….
31
3E0FFFh
3DFFFFh
Block
….
Block
3E0000h
3DF000h
….
48
992
991
….
49
3F0FFFh
3EFFFFh
….
….
50
3F0000h
3EF000h
….
61
1008
1007
….
62
Address range
3FF000h
3FFFFFh
….
63
Sector
1023
….
Block
4
3
2
1
0
004000h
003000h
002000h
001000h
000000h
004FFFh
003FFFh
002FFFh
001FFFh
000FFFh
©2004 Eon Silicon Solution, Inc.,
Rev. J, Issue Date: 2011/09/19
www.eonssi.com
EN25Q128
OPERATING FEATURES
Standard SPI Modes
The EN25Q128 is accessed through a SPI compatible bus consisting of four signals: Serial Clock
(CLK), Chip Select (CS#), Serial Data Input (DI) and Serial Data Output (DO). Both SPI bus operation
Modes 0 (0,0) and 3 (1,1) are supported. The primary difference between Mode 0 and Mode 3, as
shown in Figure 3, concerns the normal state of the CLK signal when the SPI bus master is in standby
and data is not being transferred to the Serial Flash. For Mode 0 the CLK signal is normally low. For
Mode 3 the CLK signal is normally high. In either case data input on the DI pin is sampled on the rising
edge of the CLK. Data output on the DO pin is clocked out on the falling edge of CLK.
Figure 3. SPI Modes
Dual SPI Instruction
The EN25Q128 supports Dual SPI operation when using the “Dual Output Fast Read and Dual I/O
Fast Read “ (3Bh and BBh) instructions. These instructions allow data to be transferred to or from the
Serial Flash memory at two to three times the rate possible with the standard SPI. The Dual Read
instructions are ideal for quickly downloading code from Flash to RAM upon power-up (code-shadowing)
or for application that cache code-segments to RAM for execution. The Dual output feature simply
allows the SPI input pin to also serve as an output during this instruction. When using Dual SPI
instructions the DI and DO pins become bidirectional I/O pins; DQ0 and DQ1. All other operations use
the standard SPI interface with single output signal.
Quad SPI Instruction
The EN25Q128 supports Quad output operation when using the Quad I/O Fast Read (EBh).This
instruction allows data to be transferred to or from the Serial Flash memory at four to six times the rate
possible with the standard SPI. The Quad Read instruction offer a significant improvement in
continuous and random access transfer rates allowing fast code-shadowing to RAM or for application
that cache code-segments to RAM for execution. The EN25Q128 also supports full Quad Mode
function while using the Enable Quad Peripheral Interface mode (EQPI) (38h). When using Quad SPI
instruction the DI and DO pins become bidirectional I/O pins; DQ0 and DQ1, and the WP# and NC pins
become DQ2 and DQ3 respectively.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
11
©2004 Eon Silicon Solution, Inc.,
Rev. J, Issue Date: 2011/09/19
www.eonssi.com
EN25Q128
Figure 4. Quad SPI Modes
Page Programming
To program one data byte, two instructions are required: Write Enable (WREN), which is one byte, and
a Page Program (PP) sequence, which consists of four bytes plus data. This is followed by the internal
Program cycle (of duration tPP).
To spread this overhead, the Page Program (PP) instruction allows up to 256 bytes to be programmed
at a time (changing bits from 1 to 0) provided that they lie in consecutive addresses on the same page
of memory.
Sector Erase, Block Erase and Chip Erase
The Page Program (PP) instruction allows bits to be reset from 1 to 0. Before this can be applied, the
bytes of memory need to have been erased to all 1s (FFh). This can be achieved a sector at a time,
using the Sector Erase (SE) instruction, a block at a time using the Block Erase (BE) instruction or
throughout the entire memory, using the Chip Erase (CE) instruction. This starts an internal Erase cycle
(of duration tSE tBE or tCE). The Erase instruction must be preceded by a Write Enable (WREN)
instruction.
Polling During a Write, Program or Erase Cycle
A further improvement in the time to Write Status Register (WRSR), Program (PP) or Erase (SE, BE or
CE) can be achieved by not waiting for the worst case delay (tW, tPP, tSE, tBE or tCE). The Write In
Progress (WIP) bit is provided in the Status Register so that the application program can monitor its
value, polling it to establish when the previous Write cycle, Program cycle or Erase cycle is complete.
Active Power, Stand-by Power and Deep Power-Down Modes
When Chip Select (CS#) is Low, the device is enabled, and in the Active Power mode. When Chip
Select (CS#) is High, the device is disabled, but could remain in the Active Power mode until all internal
cycles have completed (Program, Erase, and Write Status Register). The device then goes into the
Stand-by Power mode. The device consumption drops to ICC1.
The Deep Power-down mode is entered when the specific instruction (the Enter Deep Power-down
Mode (DP) instruction) is executed. The device consumption drops further to ICC2. The device remains
in this mode until another specific instruction (the Release from Deep Power-down Mode and Read
Device ID (RDI) instruction) is executed.
All other instructions are ignored while the device is in the Deep Power-down mode. This can be used
as an extra software protection mechanism, when the device is not in active use, to protect the device
from inadvertent Write, Program or Erase instructions.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
12
©2004 Eon Silicon Solution, Inc.,
Rev. J, Issue Date: 2011/09/19
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EN25Q128
Status Register
The Status Register contain a number of status and control bits that can be read or set (as appropriate)
by specific instructions.
WIP bit. The Write In Progress (WIP) bit indicates whether the memory is busy with a Write Status
Register, Program or Erase cycle.
WEL bit. The Write Enable Latch (WEL) bit indicates the status of the internal Write Enable Latch.
BP3, BP2, BP1, BP0 bits. The Block Protect (BP3, BP2, BP1, BP0) bits are non-volatile. They define
the size of the area to be software protected against Program and Erase instructions.
WPDIS bit. The Write Protect disable (WPDIS) bit, non-volatile bit, when it is reset to “0” (factory
default) to enable WP# function or is set to “1” to disable WP# function (can be floating during SPI
mode.)
SRP bit / OTP_LOCK bit The Status Register Protect (SRP) bit operates in conjunction with the Write
Protect (WP#) signal. The Status Register Protect (SRP) bit and Write Protect (WP#) signal allow the
device to be put in the Hardware Protected mode. In this mode, the non-volatile bits of the Status
Register (SRP, BP3, BP2, BP1, BP0) become read-only bits.
In OTP mode, this bit serves as OTP_LOCK bit, user can read/program/erase OTP sector as normal
sector while OTP_LOCK bit value is equal 0, after OTP_LOCK bit is programmed with 1 by WRSR
command, the OTP sector is protected from program and erase operation. The OTP_LOCK bit can only
be programmed once.
Note : In OTP mode, the WRSR command will ignore any input data and program OTP_LOCK bit to 1,
user must clear the protect bits before entering OTP mode and program the OTP code, then execute
WRSR command to lock the OTP sector before leaving OTP mode.
Write Protection
Applications that use non-volatile memory must take into consideration the possibility of noise and other
adverse system conditions that may compromise data integrity. To address this concern the EN25Q128
provides the following data protection mechanisms:
z
Power-On Reset and an internal timer (tPUW) can provide protection against inadvertent changes
while the power supply is outside the operating specification.
z
Program, Erase and Write Status Register instructions are checked that they consist of a number
of clock pulses that is a multiple of eight, before they are accepted for execution.
z
All instructions that modify data must be preceded by a Write Enable (WREN) instruction to set
the Write Enable Latch (WEL) bit. This bit is returned to its reset state by the following events:
– Power-up
– Write Disable (WRDI) instruction completion or Write Status Register (WRSR) instruction
completion or Page Program (PP) instruction completion or Sector Erase (SE) instruction
completion or Block Erase (BE) instruction completion or Chip Erase (CE) instruction
completion
z
The Block Protect (BP3, BP2, BP1, BP0) bits allow part of the memory to be configured as readonly. This is the Software Protected Mode (SPM).
z
The Write Protect (WP#) signal allows the Block Protect (BP3, BP2, BP1, BP0) bits and Status
Register Protect (SRP) bit to be protected. This is the Hardware Protected Mode (HPM).
z
In addition to the low power consumption feature, the Deep Power-down mode offers extra
software protection from inadvertent Write, Program and Erase instructions, as all instructions are
ignored except one particular instruction (the Release from Deep Power-down instruction).
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
13
©2004 Eon Silicon Solution, Inc.,
Rev. J, Issue Date: 2011/09/19
www.eonssi.com
EN25Q128
Table 3. Protected Area Sizes Sector Organization
Status Register Content
BP3
Bit
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
BP2
Bit
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
BP1
Bit
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
BP0
Bit
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
Memory Content
Protect Areas
Addresses
None
Block 0 to 254
Block 0 to 253
Block 0 to 251
Block 0 to 247
Block 0 to 239
Block 0 to 223
All
None
Block 255 to 1
Block 255 to 2
Block 255 to 4
Block 255 to 8
Block 255 to 16
Block 255 to 32
All
None
000000h-FEFFFFh
000000h-FDFFFFh
000000h-FBFFFFh
000000h-F7FFFFh
000000h-EFFFFFh
000000h-DFFFFFh
000000h-FFFFFFh
None
FFFFFFh-010000h
FFFFFFh-020000h
FFFFFFh-040000h
FFFFFFh-080000h
FFFFFFh-100000h
FFFFFFh-200000h
FFFFFFh-000000h
Density(KB)
None
16320KB
16256KB
16128KB
15872KB
15360KB
14336KB
16384KB
None
16320KB
16256KB
16128KB
15872KB
15360KB
14336KB
16384KB
Portion
None
Lower 255/256
Lower 254/256
Lower 252/256
Lower 248/256
Lower 240/256
Lower 224/256
All
None
Upper 255/256
Upper 254/256
Upper 252/256
Upper 248/256
Upper 240/256
Upper 224/256
All
INSTRUCTIONS
All instructions, addresses and data are shifted in and out of the device, most significant bit first. Serial
Data Input (DI) is sampled on the first rising edge of Serial Clock (CLK) after Chip Select (CS#) is
driven Low. Then, the one-byte instruction code must be shifted in to the device, most significant bit first,
on Serial Data Input (DI), each bit being latched on the rising edges of Serial Clock (CLK).
The instruction set is listed in Table 4. Every instruction sequence starts with a one-byte instruction
code. Depending on the instruction, this might be followed by address bytes, or by data bytes, or by
both or none. Chip Select (CS#) must be driven High after the last bit of the instruction sequence has
been shifted in. In the case of a Read Data Bytes (READ), Read Data Bytes at Higher Speed
(Fast_Read), Dual Output Fast Read (3Bh), Dual I/O Fast Read (BBh), Quad Input/Output
FAST_READ (EBh), Read Status Register (RDSR) or Release from Deep Power-down, and Read
Device ID (RDI) instruction, the shifted-in instruction sequence is followed by a data-out sequence.
Chip Select (CS#) can be driven High after any bit of the data-out sequence is being shifted out.
In the case of a Page Program (PP), Sector Erase (SE), Block Erase (BE), Chip Erase (CE), Write
Status Register (WRSR), Write Enable (WREN), Write Disable (WRDI) or Deep Power-down (DP)
instruction, Chip Select (CS#) must be driven High exactly at a byte boundary, otherwise the instruction
is rejected, and is not executed. That is, Chip Select (CS#) must driven High when the number of clock
pulses after Chip Select (CS#) being driven Low is an exact multiple of eight. For Page Program, if at
any time the input byte is not a full byte, nothing will happen and WEL will not be reset.
In the case of multi-byte commands of Page Program (PP), and Release from Deep Power Down
(RES ) minimum number of bytes specified has to be given, without which, the command will be
ignored.
In the case of Page Program, if the number of byte after the command is less than 4 (at least 1
data byte), it will be ignored too. In the case of SE and BE, exact 24-bit address is a must, any
less or more will cause the command to be ignored.
All attempts to access the memory array during a Write Status Register cycle, Program cycle or Erase
cycle are ignored, and the internal Write Status Register cycle, Program cycle or Erase cycle continues
unaffected.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
14
©2004 Eon Silicon Solution, Inc.,
Rev. J, Issue Date: 2011/09/19
www.eonssi.com
EN25Q128
Table 4A. Instruction Set
Instruction Name
Byte 1
Code
EQPI
38h
RSTQIO(2)
FFh
RSTEN
66h
RST(1)
99h
Write Enable
Write Disable / Exit
OTP mode
Read Status
Register
Write Status
Register
Page Program
Sector Erase / OTP
erase
Block Erase
06h
Chip Erase
C7h/ 60h
Deep Power-down
Release from Deep
Power-down, and
read Device ID
Release from Deep
Power-down
Manufacturer/
Device ID
Read Identification
Enter OTP mode
B9h
Byte 2
Byte 3
Byte 4
Byte 5
Byte 6
n-Bytes
04h
05h
(S7-S0)(3)
01h
S7-S0
02h
A23-A16
A15-A8
A7-A0
20h
A23-A16
A15-A8
A7-A0
D8h
A23-A16
A15-A8
A7-A0
continuous(4)
D7-D0
Next byte
continuous
(5)
dummy
dummy
90h
dummy
dummy
9Fh
3Ah
(M7-M0)
(ID15-ID8)
dummy
(ID7-ID0)
00h
01h
(ID7-ID0)
(M7-M0)
(ID7-ID0)
(7)
ABh
(ID7-ID0)
(M7-M0)
(6)
Notes:
1. RST command only executed if RSTEN command is executed first. Any intervening command will disable Reset.
2. Device accepts eight-clocks command in Standard SPI mode, or two-clocks command in Quad SPI mode
3. Data bytes are shifted with Most Significant Bit first. Byte fields with data in parenthesis “( )” indicate data being read from the
device on the DO pin
4. The Status Register contents will repeat continuously until CS# terminate the instruction
5. The Device ID will repeat continuously until CS# terminates the instruction
6. The Manufacturer ID and Device ID bytes will repeat continuously until CS# terminates the instruction.
00h on Byte 4 starts with MID and alternate with DID, 01h on Byte 4 starts with DID and alternate with MID
7. (M7-M0) : Manufacturer, (ID15-ID8) : Memory Type, (ID7-ID0) : Memory Capacity
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
15
©2004 Eon Silicon Solution, Inc.,
Rev. J, Issue Date: 2011/09/19
www.eonssi.com
EN25Q128
Table 4B. Instruction Set (Read Instruction)
Instruction Name
Byte 1
Code
Byte 2
Byte 3
Byte 4
Byte 5
Byte 6
Read Data
03h
A23-A16
A15-A8
A7-A0
(D7-D0)
(Next byte)
Fast Read
0Bh
A23-A16
A15-A8
A7-A0
dummy
(D7-D0)
Dual Output Fast
Read
3Bh
A23-A16
A15-A8
A7-A0
dummy
(D7-D0, …) (1)
Dual I/O Fast Read
BBh
A23-A8(2)
A7-A0,
dummy (2)
(D7-D0, …) (1)
Quad I/O Fast Read
EBh
A23-A0,
(dummy,
dummy (4)
D7-D0 ) (5)
(D7-D0, …) (3)
n-Bytes
continuous
(Next Byte)
continuous
(one byte
per 4 clocks,
continuous)
(one byte
per 4 clocks,
continuous)
(one byte
per 2 clocks,
continuous)
Notes:
1. Dual Output data
DQ0 = (D6, D4, D2, D0)
DQ1 = (D7, D5, D3, D1)
2. Dual Input Address
DQ0 = A22, A20, A18, A16, A14, A12, A10, A8 ; A6, A4, A2, A0, dummy 6, dummy 4, dummy 2, dummy 0
DQ1 = A23, A21, A19, A17, A15, A13, A11, A9 ; A7, A5, A3, A1, dummy 7, dummy 5, dummy 3, dummy 1
3. Quad Data
DQ0 = (D4, D0, …… )
DQ1 = (D5, D1, …… )
DQ2 = (D6, D2, …... )
DQ3 = (D7, D3, …... )
4. Quad Input Address
DQ0 = A20, A16, A12, A8, A4, A0, dummy 4, dummy 0
DQ1 = A21, A17, A13, A9, A5, A1, dummy 5, dummy 1
DQ2 = A22, A18, A14, A10, A6, A2, dummy 6, dummy 2
DQ3 = A23, A19, A15, A11, A7, A3, dummy 7, dummy 3
5. Quad I/O Fast Read Data
DQ0 = ( dummy 12, dummy 8, dummy 4, dummy 0, D4, D0 )
DQ1 = ( dummy 13, dummy 9, dummy 5, dummy 1, D5, D1 )
DQ2 = ( dummy 14, dummy 10, dummy 6, dummy 2, D6, D2 )
DQ3 = ( dummy 15, dummy 11, dummy 7, dummy 3, D7, D3 )
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
16
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Rev. J, Issue Date: 2011/09/19
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EN25Q128
Table 5. Manufacturer and Device Identification
OP Code
(M7-M0)
(ID15-ID0)
ABh
(ID7-ID0)
17h
90h
1Ch
9Fh
1Ch
17h
3018h
Enable Quad Peripheral Interface mode (EQPI) (38h)
The Enable Quad Peripheral Interface mode (EQPI) instruction will enable the flash device for Quad
SPI bus operation. Upon completion of the instruction, all instructions thereafter will be 4-bit multiplexed
input/output until a power cycle or “ Reset Quad I/O instruction “ instruction, as shown in Figure 5. The
device did not support the Read Data Bytes (READ) (03h), Dual Output Fast Read (3Bh) and Dual
Input/Output FAST_READ (BBh) modes while the Enable Quad Peripheral Interface mode (EQPI) (38h)
turns on.
Figure 5. Enable Quad Peripheral Interface mode Sequence Diagram
Reset Quad I/O (RSTQIO) (FFh)
The Reset Quad I/O instruction resets the device to 1-bit Standard SPI operation. To execute a Reset
Quad I/O operation, the host drives CS# low, sends the Reset Quad I/O command cycle (FFh) then,
drives CS# high. This command can’t be used in Standard SPI mode.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
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EN25Q128
Reset-Enable (RSTEN) (66h) and Reset (RST) (99h)
The Reset operation is used as a system (software) reset that puts the device in normal operating
Ready mode. This operation consists of two commands: Reset-Enable (RSTEN) and Reset (RST).
To reset the EN25Q128 the host drives CS# low, sends the Reset-Enable command (66h), and drives
CS# high. Next, the host drives CS# low again, sends the Reset command (99h), and drives CS# high.
The Reset operation requires the Reset-Enable command followed by the Reset command. Any
command other than the Reset command after the Reset-Enable command will disable the ResetEnable.
A successful command execution will reset the Status register to data = 00h, see Figure 6 for SPI Mode
and Figure 6.1 for EQPI Mode. A device reset during an active Program or Erase operation aborts the
operation, which can cause the data of the targeted address range to be corrupted or lost. Depending
on the prior operation, the reset timing may vary. Recovery from a Write operation requires more
software latency time (tSR) than recovery from other operations.
Figure 6. Reset-Enable and Reset Sequence Diagram
Figure 6.1 Reset-Enable and Reset Sequence Diagram under EQPI Mode
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
18
©2004 Eon Silicon Solution, Inc.,
Rev. J, Issue Date: 2011/09/19
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EN25Q128
Software Reset Flow
Initial
No
Command
= 66h ?
Yes
Reset enable
No
Command
= 99h ?
Yes
Reset start
No
WIP = 0 ?
Embedded
Reset Cycle
Yes
Reset done
Note:
1. Reset-Enable (RSTEN) (66h) and Reset (RST) (99h) commands need to match standard SPI or
EQPI (Quad) mode.
2. Continue (Enhance) EB mode need to use quad Reset-Enable (RSTEN) (66h) and quad Reset (RST)
(99h) commands.
3. If user is not sure it is in SPI or Quad mode, we suggest to execute sequence as follows:
Quad Reset-Enable (RSTEN) (66h) -> Quad Reset (RST) (99h) -> SPI Reset-Enable (RSTEN) (66h)
-> SPI Reset (RST) (99h) to reset.
4. The reset command could be executed during embedded program and erase process, EQPI mode
and Continue EB mode to back to SPI mode.
5. This flow cannot release the device from Deep power down mode.
6. The Status Register Bit will reset to default value after reset done.
7. If user reset device during erase, the embedded reset cycle software reset latency will take about
28us in worst case.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
19
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EN25Q128
Write Enable (WREN) (06h)
The Write Enable (WREN) instruction (Figure 7) sets the Write Enable Latch (WEL) bit. The Write
Enable Latch (WEL) bit must be set prior to every Page Program (PP), Sector Erase (SE), Block Erase
(BE), Chip Erase (CE) and Write Status Register (WRSR) instruction.
The Write Enable (WREN) instruction is entered by driving Chip Select (CS#) Low, sending the
instruction code, and then driving Chip Select (CS#) High.
The instruction sequence is shown in Figure 8.1 while using the Enable Quad Peripheral Interface mode
(EQPI) (38h) command.
Figure 7. Write Enable Instruction Sequence Diagram
Write Disable (WRDI) (04h)
The Write Disable instruction (Figure 8) resets the Write Enable Latch (WEL) bit in the Status Register
to a 0 or exit from OTP mode to normal mode. The Write Disable instruction is entered by driving Chip
Select (CS#) low, shifting the instruction code “04h” into the DI pin and then driving Chip Select (CS#)
high. Note that the WEL bit is automatically reset after Power-up and upon completion of the Write
Status Register, Page Program, Sector Erase, Block Erase (BE) and Chip Erase instructions.
The instruction sequence is shown in Figure 8.1 while using the Enable Quad Peripheral Interface mode
(EQPI) (38h) command.
Figure 8. Write Disable Instruction Sequence Diagram
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
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Rev. J, Issue Date: 2011/09/19
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EN25Q128
Figure 8.1 Write Enable/Disable Instruction Sequence under EQPI Mode
Read Status Register (RDSR) (05h)
The Read Status Register (RDSR) instruction allows the Status Register to be read. The Status
Register may be read at any time, even while a Program, Erase or Write Status Register cycle is in
progress. When one of these cycles is in progress, it is recommended to check the Write In Progress
(WIP) bit before sending a new instruction to the device. It is also possible to read the Status Register
continuously, as shown in Figure 9.
The instruction sequence is shown in Figure 9.1 while using the Enable Quad Peripheral Interface mode
(EQPI) (38h) command.
Figure 9. Read Status Register Instruction Sequence Diagram
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
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EN25Q128
Figure 9.1 Read Status Register Instruction Sequence under EQPI Mode
Table 6. Status Register Bit Locations
S7
S6
S5
SRP
OTP_LOCK
Status
Register
Protect
bit
(note 1)
1 = status
register write
disable
1 = OTP
sector is
protected
Non-volatile bit
WPDIS
BP3
S4
S3
S2
S1
BP2
BP1
BP0
WEL
(Block
(Block
(Block
(Block
(Write Enable
(WP# disable)
Protected bits) Protected bits) Protected bits) Protected bits)
Latch)
1 = WP#
disable
0 = WP#
enable
(note 2)
(note 2)
(note 2)
(note 2)
S0
WIP
(Write In
Progress bit)
(Note 3)
1 = write
enable
0 = not write
enable
1 = write
operation
0 = not in write
operation
volatile bit
volatile bit
Non-volatile bit Non-volatile bit. Non-volatile bit Non-volatile bit Non-volatile bit
Note
1. In OTP mode, SRP bit is served as OTP_LOCK bit.
2. See the table “Protected Area Sizes Sector Organization”.
The status and control bits of the Status Register are as follows:
WIP bit. The Write In Progress (WIP) bit indicates whether the memory is busy with a Write Status
Register, Program or Erase cycle. When set to 1, such a cycle is in progress, when reset to 0 no such
cycle is in progress.
WEL bit. The Write Enable Latch (WEL) bit indicates the status of the internal Write Enable Latch.
When set to 1 the internal Write Enable Latch is set, when set to 0 the internal Write Enable Latch is
reset and no Write Status Register, Program or Erase instruction is accepted.
BP3, BP2, BP1, BP0 bits. The Block Protect (BP3, BP2, BP1, BP0) bits are non-volatile. They define
the size of the area to be software protected against Program and Erase instructions. These bits are
written with the Write Status Register (WRSR) instruction. When one or both of the Block Protect (BP3,
BP2, BP1, BP0) bits is set to 1, the relevant memory area (as defined in Table 3.) becomes protected
against Page Program (PP) Sector Erase (SE) and , Block Erase (BE), instructions. The Block Protect
This Data Sheet may be revised by subsequent versions
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EN25Q128
(BP3, BP2, BP1, BP0) bits can be written provided that the Hardware Protected mode has not been set.
The Chip Erase (CE) instruction is executed if, and only if, all Block Protect (BP3, BP2, BP1, BP0) bits
are 0.
WPDIS bit. The Write Protect disable (WPDIS) bit, non-volatile bit, when it is reset to “0” (factory
default) to enable WP# function or is set to “1” to disable WP# function (can be floating during SPI
mode.)
SRP bit / OTP_LOCK bit. The Status Register Protect (SRP) bit operates in conjunction with the Write
Protect (WP#) signal. The Status Register Write Protect (SRP) bit and Write Protect (WP#) signal allow
the device to be put in the Hardware Protected mode (when the Status Register Protect (SRP) bit is set
to 1, and Write Protect (WP#) is driven Low). In this mode, the non-volatile bits of the Status Register
(SRP, BP3, BP2, BP1, BP0) become read-only bits and the Write Status Register (WRSR) instruction is
no longer accepted for execution.
In OTP mode, this bit serves as OTP_LOCK bit, user can read/program/erase OTP sector as normal
sector while OTP_LOCK value is equal 0, after OTP_LOCK is programmed with 1 by WRSR command,
the OTP sector is protected from program and erase operation. The OTP_LOCK bit can only be
programmed once.
Note : In OTP mode, the WRSR command will ignore any input data and program OTP_LOCK bit to 1,
user must clear the protect bits before enter OTP mode and program the OTP code, then execute
WRSR command to lock the OTP sector before leaving OTP mode.
Write Status Register (WRSR) (01h)
The Write Status Register (WRSR) instruction allows new values to be written to the Status Register.
Before it can be accepted, a Write Enable (WREN) instruction must previously have been executed.
After the Write Enable (WREN) instruction has been decoded and executed, the device sets the Write
Enable Latch (WEL).
The Write Status Register (WRSR) instruction is entered by driving Chip Select (CS#) Low, followed by
the instruction code and the data byte on Serial Data Input (DI).
The instruction sequence is shown in Figure 10. The Write Status Register (WRSR) instruction has no
effect on S1 and S0 of the Status Register. Chip Select (CS#) must be driven High after the eighth bit of
the data byte has been latched in. If not, the Write Status Register (WRSR) instruction is not executed.
As soon as Chip Select (CS#) is driven High, the self-timed Write Status Register cycle (whose
duration is tW) is initiated. While the Write Status Register cycle is in progress, the Status Register may
still be read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1
during the self-timed Write Status Register cycle, and is 0 when it is completed. When the cycle is
completed, the Write Enable Latch (WEL) is reset.
The Write Status Register (WRSR) instruction allows the user to change the values of the Block Protect
(BP3, BP2, BP1, BP0) bits, to define the size of the area that is to be treated as read-only, as defined in
Table 3. The Write Status Register (WRSR) instruction also allows the user to set or reset the Status
Register Protect (SRP) bit in accordance with the Write Protect (WP#) signal. The Status Register
Protect (SRP) bit and Write Protect (WP#) signal allow the device to be put in the Hardware Protected
Mode (HPM). The Write Status Register (WRSR) instruction is not executed once the Hardware
Protected Mode (HPM) is entered.
The instruction sequence is shown in Figure 10.1 while using the Enable Quad Peripheral Interface mode
(EQPI) (38h) command.
NOTE : In the OTP mode, WRSR command will ignore input data and program OTP_LOCK bit to 1.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
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EN25Q128
Figure 10. Write Status Register Instruction Sequence Diagram
Figure 10.1 Write Status Register Instruction Sequence under EQPI Mode
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
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EN25Q128
Read Data Bytes (READ) (03h)
The device is first selected by driving Chip Select (CS#) Low. The instruction code for the Read Data
Bytes (READ) instruction is followed by a 3-byte address (A23-A0), each bit being latched-in during the
rising edge of Serial Clock (CLK). Then the memory contents, at that address, is shifted out on Serial
Data Output (DO), each bit being shifted out, at a maximum frequency fR, during the falling edge of
Serial Clock (CLK).
The instruction sequence is shown in Figure 11. The first byte addressed can be at any location. The
address is automatically incremented to the next higher address after each byte of data is shifted out.
The whole memory can, therefore, be read with a single Read Data Bytes (READ) instruction. When
the highest address is reached, the address counter rolls over to 000000h, allowing the read sequence
to be continued indefinitely.
The Read Data Bytes (READ) instruction is terminated by driving Chip Select (CS#) High. Chip Select
(CS#) can be driven High at any time during data output. Any Read Data Bytes (READ) instruction,
while an Erase, Program or Write cycle is in progress, is rejected without having any effects on the
cycle that is in progress.
Figure 11. Read Data Instruction Sequence Diagram
Read Data Bytes at Higher Speed (FAST_READ) (0Bh)
The device is first selected by driving Chip Select (CS#) Low. The instruction code for the Read Data
Bytes at Higher Speed (FAST_READ) instruction is followed by a 3-byte address (A23-A0) and a
dummy byte, each bit being latched-in during the rising edge of Serial Clock (CLK). Then the memory
contents, at that address, is shifted out on Serial Data Output (DO), each bit being shifted out, at a
maximum frequency FR, during the falling edge of Serial Clock (CLK).
The instruction sequence is shown in Figure 12. The first byte addressed can be at any location. The
address is automatically incremented to the next higher address after each byte of data is shifted out.
The whole memory can, therefore, be read with a single Read Data Bytes at Higher Speed
(FAST_READ) instruction. When the highest address is reached, the address counter rolls over to
000000h, allowing the read sequence to be continued indefinitely.
The Read Data Bytes at Higher Speed (FAST_READ) instruction is terminated by driving Chip Select
(CS#) High. Chip Select (CS#) can be driven High at any time during data output. Any Read Data Bytes
at Higher Speed (FAST_READ) instruction, while an Erase, Program or Write cycle is in progress, is
rejected without having any effects on the cycle that is in progress.
The instruction sequence is shown in Figure 12.1 while using the Enable Quad Peripheral Interface mode
(EQPI) (38h) command.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
25
©2004 Eon Silicon Solution, Inc.,
Rev. J, Issue Date: 2011/09/19
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EN25Q128
Figure 12. Fast Read Instruction Sequence Diagram
Figure 12.1 Fast Read Instruction Sequence under EQPI Mode
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
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EN25Q128
Dual Output Fast Read (3Bh)
The Dual Output Fast Read (3Bh) is similar to the standard Fast Read (0Bh) instruction except that
data is output on two pins, DQ0 and DQ1, instead of just DQ0. This allows data to be transferred from
the EN25Q128 at twice the rate of standard SPI devices. The Dual Output Fast Read instruction is ideal
for quickly downloading code from to RAM upon power-up or for applications that cache codesegments to RAM for execution.
Similar to the Fast Read instruction, the Dual Output Fast Read instruction can operation at the highest
possible frequency of FR (see AC Electrical Characteristics). This is accomplished by adding eight
“dummy clocks after the 24-bit address as shown in Figure 13. The dummy clocks allow the device’s
internal circuits additional time for setting up the initial address. The input data during the dummy clock
is “don’t care”. However, the DI pin should be high-impedance prior to the falling edge of the first data
out clock.
Figure 13. Dual Output Fast Read Instruction Sequence Diagram
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EN25Q128
Dual Input / Output FAST_READ (BBh)
The Dual I/O Fast Read (BBh) instruction allows for improved random access while maintaining two IO
pins, DQ0 and DQ1. It is similar to the Dual Output Fast Read (3Bh) instruction but with the capability to
input the Address bits (A23-0) two bits per clock. This reduced instruction overhead may allow for code
execution (XIP) directly from the Dual SPI in some applications.
The Dual I/O Fast Read instruction enable double throughput of Serial Flash in read mode. The
address is latched on rising edge of CLK, and data of every two bits (interleave 2 I/O pins) shift out on
the falling edge of CLK at a maximum frequency. The first address can be at any location. The address
is automatically increased to the next higher address after each byte data is shifted out, so the whole
memory can be read out at a single Dual I/O Fast Read instruction. The address counter rolls over to 0
when the highest address has been reached. Once writing Dual I/O Fast Read instruction, the following
address/dummy/data out will perform as 2-bit instead of previous 1-bit, as shown in Figure 14.
Figure 14. Dual Input / Output Fast Read Instruction Sequence Diagram
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EN25Q128
Quad Input / Output FAST_READ (EBh)
The Quad Input/Output FAST_READ (EBh) instruction is similar to the Dual I/O Fast Read (BBh)
instruction except that address and data bits are input and output through four pins, DQ0, DQ1, DQ2 and
DQ3 and six dummy clocks are required prior to the data output. The Quad I/O dramatically reduces
instruction overhead allowing faster random access for code execution (XIP) directly from the Quad SPI.
The Quad Input/Output FAST_READ (EBh) instruction enable quad throughput of Serial Flash in read
mode. The address is latching on rising edge of CLK, and data of every four bits (interleave on 4 I/O
pins) shift out on the falling edge of CLK at a maximum frequency FR. The first address can be any
location. The address is automatically increased to the next higher address after each byte data is
shifted out, so the whole memory can be read out at a single Quad Input/Output FAST_READ
instruction. The address counter rolls over to 0 when the highest address has been reached. Once
writing Quad Input/Output FAST_READ instruction, the following address/dummy/data out will perform
as 4-bit instead of previous 1-bit.
The sequence of issuing Quad Input/Output FAST_READ (EBh) instruction is: CS# goes low ->
sending Quad Input/Output FAST_READ (EBh) instruction -> 24-bit address interleave on DQ3, DQ2,
DQ1 and DQ0 -> 6 dummy clocks -> data out interleave on DQ3, DQ2, DQ1 and DQ0 -> to end Quad
Input/Output FAST_READ (EBh) operation can use CS# to high at any time during data out, as shown
in Figure 15.
The instruction sequence is shown in Figure 15.1 while using the Enable Quad Peripheral Interface mode (EQPI)
(38h) command.
Figure 15. Quad Input / Output Fast Read Instruction Sequence Diagram
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EN25Q128
Figure 15.1. Quad Input / Output Fast Read Instruction Sequence under EQPI Mode
Another sequence of issuing Quad Input/Output FAST_READ (EBh) instruction especially useful in
random access is : CS# goes low -> sending Quad Input/Output FAST_READ (EBh) instruction -> 24bit address interleave on DQ3, DQ2, DQ1 and DQ0 -> performance enhance toggling bit P[7:0] -> 4
dummy clocks -> data out interleave on DQ3, DQ2, DQ1 and DQ0 till CS# goes high -> CS# goes low
(reduce Quad Input/Output FAST_READ (EBh) instruction) -> 24-bit random access address, as shown
in Figure 16.
In the performance – enhancing mode, P[7:4] must be toggling with P[3:0] ; likewise P[7:0] = A5h, 5Ah,
F0h or 0Fh can make this mode continue and reduce the next Quad Input/Output FAST_READ (EBh)
instruction. Once P[7:4] is no longer toggling with P[3:0] ; likewise P[7:0] = FFh, 00h, AAh or 55h. And
afterwards CS# is raised, the system then will escape from performance enhance mode and return to
normal operation.
While Program/ Erase/ Write Status Register is in progress, Quad Input/Output FAST_READ (EBh)
instruction is rejected without impact on the Program/ Erase/ Write Status Register current cycle.
The instruction sequence is shown in Figure 16.1 while using the Enable Quad Peripheral Interface mode (EQPI)
(38h) command.
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EN25Q128
Figure 16. Quad Input/Output Fast Read Enhance Performance Mode Sequence Diagram
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EN25Q128
Figure 16.1 Quad Input/Output Fast Read Enhance Performance Mode Sequence under EQPI Mode
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EN25Q128
Page Program (PP) (02h)
The Page Program (PP) instruction allows bytes to be programmed in the memory. Before it can be
accepted, a Write Enable (WREN) instruction must previously have been executed. After the Write
Enable (WREN) instruction has been decoded, the device sets the Write Enable Latch (WEL).
The Page Program (PP) instruction is entered by driving Chip Select (CS#) Low, followed by the instruction code, three address bytes and at least one data byte on Serial Data Input (DI). If the 8 least
significant address bits (A7-A0) are not all zero, all transmitted data that goes beyond the end of the
current page are programmed from the start address of the same page (from the address whose 8
least significant bits (A7-A0) are all zero). Chip Select (CS#) must be driven Low for the entire duration
of the sequence.
The instruction sequence is shown in Figure 17. If more than 256 bytes are sent to the device, previously latched data are discarded and the last 256 data bytes are guaranteed to be programmed correctly within the same page. If less than 256 Data bytes are sent to device, they are correctly programmed at the requested addresses without having any effects on the other bytes of the same page.
Chip Select (CS#) must be driven High after the eighth bit of the last data byte has been latched in,
otherwise the Page Program (PP) instruction is not executed.
As soon as Chip Select (CS#) is driven High, the self-timed Page Program cycle (whose duration is tPP)
is initiated. While the Page Program cycle is in progress, the Status Register may be read to check the
value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Page
Program cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed,
the Write Enable Latch (WEL) bit is reset.
A Page Program (PP) instruction applied to a page which is protected by the Block Protect (BP3, BP2,
BP1, BP0) bits (see Table 3) is not executed.
The instruction sequence is shown in Figure 17.1 while using the Enable Quad Peripheral Interface mode
(EQPI) (38h) command.
Figure 17. Page Program Instruction Sequence Diagram
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EN25Q128
Figure 17.1 Program Instruction Sequence under EQPI Mode
Sector Erase (SE) (20h)
The Sector Erase (SE) instruction sets to 1 (FFh) all bits inside the chosen sector. Before it can be
accepted, a Write Enable (WREN) instruction must previously have been executed. After the Write
Enable (WREN) instruction has been decoded, the device sets the Write Enable Latch (WEL).
The Sector Erase (SE) instruction is entered by driving Chip Select (CS#) Low, followed by the instruction code, and three address bytes on Serial Data Input (DI). Any address inside the Sector (see
Table 2) is a valid address for the Sector Erase (SE) instruction. Chip Select (CS#) must be driven Low
for the entire duration of the sequence.
The instruction sequence is shown in Figure 18. Chip Select (CS#) must be driven High after the eighth
bit of the last address byte has been latched in, otherwise the Sector Erase (SE) instruction is not
executed. As soon as Chip Select (CS#) is driven High, the self-timed Sector Erase cycle (whose duration is tSE) is initiated. While the Sector Erase cycle is in progress, the Status Register may be read
to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the
self-timed Sector Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle
is completed, the Write Enable Latch (WEL) bit is reset.
A Sector Erase (SE) instruction applied to a sector which is protected by the Block Protect (BP3, BP2,
BP1, BP0) bits (see Table 3) is not executed.
The instruction sequence is shown in Figure 19.1 while using the Enable Quad Peripheral Interface mode
(EQPI) (38h) command.
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EN25Q128
Figure 18. Sector Erase Instruction Sequence Diagram
Block Erase (BE) (D8h)
The Block Erase (BE) instruction sets to 1 (FFh) all bits inside the chosen block. Before it can be
accepted, a Write Enable (WREN) instruction must previously have been executed. After the Write
Enable (WREN) instruction has been decoded, the device sets the Write Enable Latch (WEL).
The Block Erase (BE) instruction is entered by driving Chip Select (CS#) Low, followed by the instruction code, and three address bytes on Serial Data Input (DI). Any address inside the Block (see
Table 2) is a valid address for the Block Erase (BE) instruction. Chip Select (CS#) must be driven Low
for the entire duration of the sequence.
The instruction sequence is shown in Figure 19. Chip Select (CS#) must be driven High after the eighth
bit of the last address byte has been latched in, otherwise the Block Erase (BE) instruction is not
executed. As soon as Chip Select (CS#) is driven High, the self-timed Block Erase cycle (whose duration is tBE) is initiated. While the Block Erase cycle is in progress, the Status Register may be read to
check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the selftimed Block Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is
completed, the Write Enable Latch (WEL) bit is reset.
A Block Erase (BE) instruction applied to a block which is protected by the Block Protect (BP3, BP2,
BP1, BP0) bits (see Table 3) is not executed.
The instruction sequence is shown in Figure 19.1 while using the Enable Quad Peripheral Interface mode
(EQPI) (38h) command.
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EN25Q128
Figure 19. Block Erase Instruction Sequence Diagram
Figure 19.1 Block/Sector Erase Instruction Sequence under EQPI Mode
This Data Sheet may be revised by subsequent versions
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EN25Q128
Chip Erase (CE) (C7h/60h)
The Chip Erase (CE) instruction sets all bits to 1 (FFh). Before it can be accepted, a Write Enable
(WREN) instruction must previously have been executed. After the Write Enable (WREN) instruction
has been decoded, the device sets the Write Enable Latch (WEL).
The Chip Erase (CE) instruction is entered by driving Chip Select (CS#) Low, followed by the instruction
code on Serial Data Input (DI). Chip Select (CS#) must be driven Low for the entire duration of the
sequence.
The instruction sequence is shown in Figure 20. Chip Select (CS#) must be driven High after the eighth
bit of the instruction code has been latched in, otherwise the Chip Erase instruction is not executed. As
soon as Chip Select (CS#) is driven High, the self-timed Chip Erase cycle (whose duration is tCE) is
initiated. While the Chip Erase cycle is in progress, the Status Register may be read to check the value
of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Chip Erase
cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write
Enable Latch (WEL) bit is reset.
The Chip Erase (CE) instruction is executed only if all Block Protect (BP3, BP2, BP1, BP0) bits are 0.
The Chip Erase (CE) instruction is ignored if one, or more blocks are protected.
The instruction sequence is shown in Figure 20.1 while using the Enable Quad Peripheral Interface mode
(EQPI) (38h) command.
Figure 20. Chip Erase Instruction Sequence Diagram
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EN25Q128
Figure 20.1 Chip Erase Sequence under EQPI Mode
Deep Power-down (DP) (B9h)
Executing the Deep Power-down (DP) instruction is the only way to put the device in the lowest consumption mode (the Deep Power-down mode). It can also be used as an extra software protection
mechanism, while the device is not in active use, since in this mode, the device ignores all Write,
Program and Erase instructions.
Driving Chip Select (CS#) High deselects the device, and puts the device in the Standby mode (if there
is no internal cycle currently in progress). But this mode is not the Deep Power-down mode. The Deep
Power-down mode can only be entered by executing the Deep Power-down (DP) instruction, to reduce
the standby current (from ICC1 to ICC2, as specified in Table 9.)
Once the device has entered the Deep Power-down mode, all instructions are ignored except the
Release from Deep Power-down and Read Device ID (RDI) instruction. This releases the device from
this mode. The Release from Deep Power-down and Read Device ID (RDI) instruction also allows the
Device ID of the device to be output on Serial Data Output (DO).
The Deep Power-down mode automatically stops at Power-down, and the device always Powers-up in
the Standby mode. The Deep Power-down (DP) instruction is entered by driving Chip Select (CS#) Low,
followed by the instruction code on Serial Data Input (DI). Chip Select (CS#) must be driven Low for the
entire duration of the sequence.
The instruction sequence is shown in Figure 21. Chip Select (CS#) must be driven High after the eighth
bit of the instruction code has been latched in, otherwise the Deep Power-down (DP) instruction is not
executed. As soon as Chip Select (CS#) is driven High, it requires a delay of tDP before the supply
current is reduced to ICC2 and the Deep Power-down mode is entered.
Any Deep Power-down (DP) instruction, while an Erase, Program or Write cycle is in progress, is
rejected without having any effects on the cycle that is in progress.
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EN25Q128
Figure 21. Deep Power-down Instruction Sequence Diagram
Release from Deep Power-down and Read Device ID (RDI)
Once the device has entered the Deep Power-down mode, all instructions are ignored except the
Release from Deep Power-down and Read Device ID (RDI) instruction. Executing this instruction takes
the device out of the Deep Power-down mode.
Please note that this is not the same as, or even a subset of, the JEDEC 16-bit Electronic Signature
that is read by the Read Identifier (RDID) instruction. The old-style Electronic Signature is supported for
reasons of backward compatibility, only, and should not be used for new designs. New designs should,
instead, make use of the JEDEC 16-bit Electronic Signature, and the Read Identifier (RDID) instruction.
When used only to release the device from the power-down state, the instruction is issued by driving
the CS# pin low, shifting the instruction code “ABh” and driving CS# high as shown in Figure 22. After
the time duration of tRES1 (See AC Characteristics) the device will resume normal operation and other
instructions will be accepted. The CS# pin must remain high during the tRES1 time duration.
When used only to obtain the Device ID while not in the power-down state, the instruction is initiated by
driving the CS# pin low and shifting the instruction code “ABh” followed by 3-dummy bytes. The Device
ID bits are then shifted out on the falling edge of CLK with most significant bit (MSB) first as shown in
Figure 23. The Device ID value for the EN25Q128 are listed in Table 5. The Device ID can be read
continuously. The instruction is completed by driving CS# high.
When Chip Select (CS#) is driven High, the device is put in the Stand-by Power mode. If the device
was not previously in the Deep Power-down mode, the transition to the Stand-by Power mode is
immediate. If the device was previously in the Deep Power-down mode, though, the transition to the
Standby Power mode is delayed by tRES2, and Chip Select (CS#) must remain High for at least tRES2
(max), as specified in Table 11. Once in the Stand-by Power mode, the device waits to be selected, so
that it can receive, decode and execute instructions.
Except while an Erase, Program or Write Status Register cycle is in progress, the Release from Deep
Power-down and Read Device ID (RDI) instruction always provides access to the 8bit Device ID of the
device, and can be applied even if the Deep Power-down mode has not been entered.
Any Release from Deep Power-down and Read Device ID (RDI) instruction while an Erase, Program or
Write Status Register cycle is in progress, is not decoded, and has no effect on the cycle that is in
progress.
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EN25Q128
Figure 22. Release Power-down Instruction Sequence Diagram
Figure 23. Release Power-down / Device ID Instruction Sequence Diagram
Read Manufacturer / Device ID (90h)
The Read Manufacturer/Device ID instruction is an alternative to the Release from Power-down /
Device ID instruction that provides both the JEDEC assigned manufacturer ID and the specific device
ID.
The Read Manufacturer/Device ID instruction is very similar to the Release from Power-down / Device
ID instruction. The instruction is initiated by driving the CS# pin low and shifting the instruction code
“90h” followed by a 24-bit address (A23-A0) of 000000h. After which, the Manufacturer ID for Eon (1Ch)
and the Device ID are shifted out on the falling edge of CLK with most significant bit (MSB) first as
shown in Figure 24. The Device ID values for the EN25Q128 are listed in Table 5. If the 24-bit address
is initially set to 000001h the Device ID will be read first
The instruction sequence is shown in Figure 24.1 while using the Enable Quad Peripheral Interface mode
(EQPI) (38h) command.
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EN25Q128
Figure 24. Read Manufacturer / Device ID Diagram
Figure 24.1. Read Manufacturer / Device ID Diagram under EQPI Mode
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EN25Q128
Read Identification (RDID) (9Fh)
The Read Identification (RDID) instruction allows the 8-bit manufacturer identification to be read,
followed by two bytes of device identification. The device identification indicates the memory type in the
first byte , and the memory capacity of the device in the second byte .
Any Read Identification (RDID) instruction while an Erase or Program cycle is in progress, is not
decoded, and has no effect on the cycle that is in progress. The Read Identification (RDID) instruction
should not be issued while the device is in Deep Power down mode.
The device is first selected by driving Chip Select Low. Then, the 8-bit instruction code for the
instruction is shifted in. This is followed by the 24-bit device identification, stored in the memory, being
shifted out on Serial Data Output, each bit being shifted out during the falling edge of Serial Clock . The
instruction sequence is shown in Figure 25. The Read Identification (RDID) instruction is terminated by
driving Chip Select High at any time during data output.
When Chip Select is driven High, the device is put in the Standby Power mode. Once in the Standby
Power mode, the device waits to be selected, so that it can receive, decode and execute instructions.
The instruction sequence is shown in Figure 25.1 while using the Enable Quad Peripheral Interface mode
(EQPI) (38h) command.
Figure 25. Read Identification (RDID)
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EN25Q128
Figure 25.1. Read Identification (RDID) under EQPI Mode
Enter OTP Mode (3Ah)
This Flash has an extra 512 bytes OTP sector, user must issue ENTER OTP MODE command to read,
program or erase OTP sector. After entering OTP mode, the OTP sector is mapping to sector 4095,
SRP bit becomes OTP_LOCK bit and can be read with RDSR command. Program / Erase command
will be disabled when OTP_LOCK bit is ‘1’
WRSR command will ignore the input data and program OTP_LOCK bit to 1.
User must clear the protect bits before enter OTP mode.
OTP sector can only be program and erase before OTP_LOCK bit is set to ‘1’ and BP [3:0] = ‘0000’. In
OTP mode, user can read other sectors, but program/erase other sectors only allowed when
OTP_LOCK bit equal to ‘0’.
User can use WRDI (04h) command to exit OTP mode.
While in OTP mode, user can use Sector Erase (20h) command only to erase OTP data.
The instruction sequence is shown in Figure 26.1 while using the Enable Quad Peripheral Interface mode
(EQPI) (38h) command.
Table 7. OTP Sector Address
Sector
Sector Size
Address Range
4095
512 byte
FFF000h – FFF1FFh
Note: The OTP sector is mapping to sector 4095
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EN25Q128
Figure 26. Enter OTP Mode Sequence
Figure 26.1 Enter OTP Mode Sequence under EQPI Mode
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EN25Q128
Power-up Timing
Figure 27. Power-up Timing
Table 8. Power-Up Timing and Write Inhibit Threshold
Symbol
Parameter
Min.
Max.
Unit
tVSL(1)
VCC(min) to CS# low
10
tPUW(1)
Time delay to Write instruction
1
10
ms
Write Inhibit Voltage
1
2.5
V
VWI(1)
µs
Note:
1.The parameters are characterized only.
2. VCC (max.) is 3.6V and VCC (min.) is 2.7V
INITIAL DELIVERY STATE
The device is delivered with the memory array erased: all bits are set to 1 (each byte contains FFh).
The Status Register contains 00h (all Status Register bits are 0).
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EN25Q128
Table 9. DC Characteristics
(Ta = - 40°C to 85°C or -40°C ~125°C; VCC = 2.7-3.6V)
Symbol
ILI
Parameter
Test Conditions
Min.
Max.
Unit
-
±2
µA
-
±2
µA
-
20
µA
-
20
µA
-
25
mA
-
20
mA
Input Leakage Current
ILO
Output Leakage Current
ICC1
Standby Current
ICC2
Deep Power-down Current
ICC3
Operating Current (READ)
CS# = VCC, VIN = VSS or VCC
CS# = VCC, VIN = VSS or VCC
CLK = 0.1 VCC / 0.9 VCC at
104MHz, DQ = open
CLK = 0.1 VCC / 0.9 VCC at
80MHz, DQ = open
CS# = VCC
ICC4
Operating Current (PP)
ICC5
Operating Current (WRSR)
ICC6
ICC7
VIL
Input Low Voltage
VIH
Input High Voltage
VOL
Output Low Voltage
IOL = 1.6 mA
VOH
Output High Voltage
IOH = –100 µA
-
28
mA
-
18
mA
Operating Current (SE)
CS# = VCC
CS# = VCC
-
25
mA
Operating Current (BE)
CS# = VCC
-
25
mA
– 0.5
0.2 VCC
V
0.7VCC
VCC+0.4
V
-
0.4
V
VCC-0.2
-
V
Table 10. AC Measurement Conditions
Symbol
CL
Parameter
Min.
Load Capacitance
Max.
Unit
20/30
pF
5
ns
Input Pulse Voltages
0.2VCC to 0.8VCC
V
Input Timing Reference Voltages
0.3VCC to 0.7VCC
V
VCC / 2
V
Input Rise and Fall Times
Output Timing Reference Voltages
Notes:
1.
CL = 20 pF when CLK=104MHz, CL = 30 pF when CLK = 80MHz,
Figure 28. AC Measurement I/O Waveform
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EN25Q128
Table 11. AC Characteristics
(Ta = - 40°C to 85°C or -40°C ~125°C; VCC = 2.7-3.6V)
Symbol
FR
Alt
fC
Parameter
Serial Clock Frequency for:
FAST_READ, PP, SE, BE, DP, RES, WREN,
WRDI, WRSR
Serial Clock Frequency for:
RDSR, RDID, Dual Output Fast Read
Serial Clock Frequency for READ, Quad I/O Fast
Read
Serial Clock High Time
fR
tCH
1
tCL1
Serial Clock Low Time
Min
Typ
Max
Unit
D.C.
-
104
MHz
D.C.
-
80
MHz
D.C.
-
50
MHz
4
-
-
ns
4
-
-
ns
tCLCH
2
Serial Clock Rise Time (Slew Rate)
0.1
-
-
V / ns
tCHCL
2
Serial Clock Fall Time (Slew Rate)
0.1
-
-
V / ns
CS# Active Setup Time (Relative to CLK)
5
-
-
ns
tCHSH
CS# Active Hold Time (Relative to CLK)
5
-
-
ns
tSHCH
CS# Not Active Setup Time (Relative to CLK)
5
-
-
ns
tCHSL
CS# Not Active Hold Time (Relative to CLK)
5
-
-
ns
CS# High Time for read
CS# High Time for program/erase
15
50
-
-
ns
ns
tSLCH
tSHSL
tCSS
tCSH
tSHQZ 2
tDIS
Output Disable Time
-
-
6
ns
tCLQX
tHO
Output Hold Time
0
-
-
ns
tDVCH
tDSU
Data In Setup Time
2
-
-
ns
tCHDX
tDH
Data In Hold Time
5
-
-
ns
tCLQV
tV
Output Valid from CLK
-
-
8
ns
tWHSL3
Write Protect Setup Time before CS# Low
20
-
-
ns
tSHWL3
Write Protect Hold Time after CS# High
100
-
-
ns
-
-
3
µs
-
-
3
µs
tDP
2
CS# High to Deep Power-down Mode
-
-
1.8
µs
tW
CS# High to Standby Mode without Electronic
Signature read
CS# High to Standby Mode with Electronic
Signature read
Write Status Register Cycle Time
-
15
50
ms
tPP
Page Programming Time
-
0.8
5
ms
tSE
Sector Erase Time
-
0.05
0.3
s
tBE
Block Erase Time
-
0.2
2
s
tCE
Chip Erase Time
-
45
140
s
tSR
Software Reset
Latency
WIP = write operation
-
-
28
µs
WIP = not in write operation
-
-
0
µs
tRES1 2
tRES2 2
Note: 1. tCH + tCL must be greater than or equal to 1/ fC
2. Value guaranteed by characterization, not 100% tested in production.
3. Only applicable as a constraint for a Write status Register instruction when Status Register Protect Bit is set at 1.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
47
©2004 Eon Silicon Solution, Inc.,
Rev. J, Issue Date: 2011/09/19
www.eonssi.com
EN25Q128
Figure 29. Serial Output Timing
Figure 30. Input Timing
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
48
©2004 Eon Silicon Solution, Inc.,
Rev. J, Issue Date: 2011/09/19
www.eonssi.com
EN25Q128
ABSOLUTE MAXIMUM RATINGS
Stresses above the values so mentioned above may cause permanent damage to the device. These
values are for a stress rating only and do not imply that the device should be operated at conditions up
to or above these values. Exposure of the device to the maximum rating values for extended periods of
time may adversely affect the device reliability.
Parameter
Value
Unit
Storage Temperature
-65 to +150
°C
Plastic Packages
-65 to +125
°C
Output Short Circuit Current1
200
mA
Input and Output Voltage
(with respect to ground) 2
-0.5 to +4.0
V
Vcc
-0.5 to +4.0
V
Notes:
1.
No more than one output shorted at a time. Duration of the short circuit should not be greater than one second.
2.
Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions, inputs may undershoot Vss to –1.0V for periods of
up to 50ns and to –2.0 V for periods of up to 20ns. See figure below. Maximum DC voltage on output and I/O pins is Vcc + 0.5 V.
During voltage transitions, outputs may overshoot to Vcc + 1.5 V for periods up to 20ns. See figure below.
RECOMMENDED OPERATING RANGES 1
Parameter
Ambient Operating Temperature
Industrial Devices
Automotive Devices
Operating Supply Voltage
Vcc
Value
Unit
-40 to 85
-40 to125
°C
Full: 2.7 to 3.6
V
Notes:
1. Recommended Operating Ranges define those limits between which the functionality of the device is guaranteed.
Vcc
+1.5V
Maximum Negative Overshoot Waveform
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
Maximum Positive Overshoot Waveform
49
©2004 Eon Silicon Solution, Inc.,
Rev. J, Issue Date: 2011/09/19
www.eonssi.com
EN25Q128
Table 12. DATA RETENTION and ENDURANCE
Parameter Description
Test Conditions
Min
Unit
150°C
10
Years
125°C
20
Years
-40 to 85 °C
100k
cycles
Data Retention Time
Erase/Program Endurance
Table 13. CAPACITANCE
( VCC = 2.7-3.6V)
Parameter Symbol
Parameter Description
Test Setup
Max
Unit
CIN
Input Capacitance
VIN = 0
6
pF
COUT
Output Capacitance
VOUT = 0
8
pF
Note : Sampled only, not 100% tested, at TA = 25°C and a frequency of 20MHz.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
50
©2004 Eon Silicon Solution, Inc.,
Rev. J, Issue Date: 2011/09/19
www.eonssi.com
EN25Q128
PACKAGE MECHANICAL
Figure 31. VDFN 8 ( 5x6 mm )
Controlling dimensions are in millimeters (mm).
DIMENSION IN MM
MIN.
NOR
MAX
A
0.70
0.75
0.80
A1
0.00
0.02
0.04
A2
--0.20
--D
5.90
6.00
6.10
E
4.90
5.00
5.10
D2
3.30
3.40
3.50
E2
3.90
4.00
4.10
e
--1.27
--b
0.35
0.40
0.45
L
0.55
0.60
0.65
Note : 1. Coplanarity: 0.1 mm
SYMBOL
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
51
©2004 Eon Silicon Solution, Inc.,
Rev. J, Issue Date: 2011/09/19
www.eonssi.com
EN25Q128
Figure 32. VDFN 8 ( 6x8 mm )
Notice:
This package can’t contact to metal
trace or pad on board due to expose
metal pad underneath the package.
DIMENSION IN MM
MIN.
NOR
A
0.70
0.75
A1
0.00
0.02
A2
--0.20
D
7.90
8.00
E
5.90
6.00
D1
4.65
4.70
E1
4.55
4.60
e
--1.27
b
0.35
0.40
L
0.4
0.50
Note : 1. Coplanarity: 0.1 mm
SYMBOL
MAX
0.80
0.05
--8.10
6.10
4.75
4.65
--0.48
0.60
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
52
©2004 Eon Silicon Solution, Inc.,
Rev. J, Issue Date: 2011/09/19
www.eonssi.com
EN25Q128
Figure 33. 16 LEAD SOP 300 mil
SYMBOL
DIMENSION IN MM
NOR
MAX
--2.65
0.20
0.30
--2.40
0.25
0.30
10.30
10.50
--10.65
7.50
7.60
1.27
----0.51
--1.27
MIN.
A
--A1
0.10
A2
2.25
C
0.20
D
10.10
E
10.00
E1
7.40
e
--b
0.31
L
0.4
θ
00
50
Note : 1. Coplanarity: 0.1 mm
80
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
53
©2004 Eon Silicon Solution, Inc.,
Rev. J, Issue Date: 2011/09/19
www.eonssi.com
EN25Q128
Figure 34. 24-ball Thin Profile Fine-Pitch Ball Grid Array (6 x 8 mm) Package
SYMBOL
DIMENSIONIN MM
A
MIN.
- --
NOR
- --
MAX
1.20
A1
0.27
- --
0.37
0.21 REF
0.54 REF
A2
A3
D
E
6
BSC
8
BSC
D1
- --
3.00
- --
E1
e
- -- --
5.00
1.00
- -- --
b
- --
0.40
- --
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
54
©2004 Eon Silicon Solution, Inc.,
Rev. J, Issue Date: 2011/09/19
www.eonssi.com
EN25Q128
Purpose
Eon Silicon Solution Inc. (hereinafter called “Eon”) is going to provide its products’ top marking on
ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the
compositions of the Ics. Eon is still keeping the promise of quality for all the products with the
same as that of Eon delivered before. Please be advised with the change and appreciate your
kindly cooperation and fully support Eon’s product family.
Eon products’ Top Marking
cFeon Top Marking Example:
cFeon
Part Number: XXXX-XXX
Lot Number: XXXXX
Date Code:
XXXXX
For More Information
Please contact your local sales office for additional information about Eon memory solutions.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
55
©2004 Eon Silicon Solution, Inc.,
Rev. J, Issue Date: 2011/09/19
www.eonssi.com
EN25Q128
ORDERING INFORMATION
EN25Q128
-
104
F
I
P
PACKAGING CONTENT
P = RoHS compliant
TEMPERATURE RANGE
I = Industrial (-40°C to +85°C)
A = Automotive (-40°C to +125°C)
PACKAGE
W = 8-pin VDFN (5x6mm)
Y = 8-pin VDFN (6x8mm)
F = 16-pin 300mil SOP
BB = 24-ball Ball Grid Array (6 x 8 mm)
SPEED
104 = 104 MHz
BASE PART NUMBER
EN = Eon Silicon Solution Inc.
25Q = 3V Serial Flash with 4KB Uniform-Sector,
Dual and Quad I/O
128 = 128 Megabit (16,384K x 8)
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
56
©2004 Eon Silicon Solution, Inc.,
Rev. J, Issue Date: 2011/09/19
www.eonssi.com
EN25Q128
Revisions List
Revision No Description
Date
A
2009/07/13
B
C
Initial Release
1. Update Page programming, Sector, Block and Chip erase time (typ.)
and (max.) parameter on page 1 and 50.
(1). Page programming: from 1.3ms to 0.8ms (typ.)
, from 5ms to 3ms (max.)
(2). Sector erase: from 0.06s to 0.05s (typ.)
, from 0.3s to 0.25s (max.)
(3). Block erase: from 0.25s to 0.2s (typ.)
, from 2s to 1.6s (max.)
(4). Chip erase: from 50s to 45s (typ.)
, from 100s to 90s (max.)
2. Add Figure 23. Write Suspend/Resume Flow on page 39
1. Add VDFN 8 ( 6 x 8 mm ) dimension on page 55.
2. Modify Table 10. DC Characteristics ICC1 (Standby) and ICC2 (Deep
2009/09/03
2009/10/21
Power-down) Current from 5µA to 20µA on page 49.
D
E
F
1. Add 24-ball Ball Grid Array (6 x 8 mm) package option.
2. Remove Write Suspend and Write Resume information.
3. Modify Software Reset Latency from 20µs to 28µs on page 47.
1. Update AC Characteristics in Table 11 on page 47.
(1). Page Programming time from 3ms to 5ms (max.)
(2). Sector Erase time from 0.25s to 0.3s (max.)
(3). Block Erase time from 1.6s to 2s (max.)
1. Rename 38h command from Enable Quad I/O (EQIO) to Enable Quad
2010/02/04
2010/04/19
2011/01/10
Peripheral Interface mode (EQPI).
2. Revise the speed of Quad SPI from 80MHz to 50MHz.
1. Update Write Status Register Cycle Time from 10 (typ.) /15 (max.) ms to 15
G
H
I
J
(typ.) / 50 (max.) ms on page 47.
2011/04/19
2. Remove the package option of 8 contact VDFN (5x6mm).
3. Rename 24 Ball package from BGA to TFBGA.
1. Add the note “5. This flow cannot release the device from Deep power
down mode.” on page 19.
2011/07/01
2. Correct the typo of 6 dummy clocks for EBh command on page 29.
3. Update Chip Erase Time (max.) from 90s to 140s on page 47.
Add Automotive (-40°C to +125°C) grade temperature option.
2011/09/06
Add VDFN 8 ( 5 x 6 mm ) package option.
2011/09/19
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
57
©2004 Eon Silicon Solution, Inc.,
Rev. J, Issue Date: 2011/09/19
www.eonssi.com