HF150-50S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF150-50S is a 50 V epitaxial transistor designed for SSB communications. The device utilizes emitter ballastiong for ruggedness. PACKAGE STYLE .500 4L STUD (A) .112 x 45° FEATURES: A Ø .630 NOM C • PG = 14 dB min. at 150 W/30 MHz • IMD3 = 100 dBc max. at 150 W (PEP) • Omnigold™ Metalization System • Common Emitter configuration B C E E B D E G 1/4-28 UNF-2A F H MAXIMUM RATINGS IC 10 A VCBO 110 V VEBO 4.0 V DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 MAXIMUM 1.050 / 26.67 B C .545 / 13.84 .555 / 14.10 D .495 / 12.57 .505 / 12.83 E .003 / 0.08 VCEO 55 V PDISS 233 W @ TC = 25 °C F G .185 / 4.70 .198 / 5.03 TJ -65 °C to +200 °C H .497 / 12.62 .530 / 13.46 TSTG -65 °C to +150 °C θJC 0.75 °C/W CHARACTERISTICS ORDER CODE: ASI10613 TC = 25 °C NONETEST CONDITIONS SYMBOL .007 / 0.18 .830 / 21.08 MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 100 mA 110 V BVCES IC = 100 mA 110 V BVCEO IC = 100 mA 55 V BVEBO IE = 10 mA 4.0 V ICEO VCE = 30 V 5 mA ICES VE = 60 V 5 mA hFE VCE = 6 V 43.5 --- Cob VCB = 50 V 220 pF GP IMD3 ηC VCE = 50 V -30 dB dBc % IC = 1.4 A 18 f = 1.0 MHz 14 ICQ =100 mA f1 = 30.000 MHz POUT = 150 W (PEP) f2 = 30.001 MHz 37 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 1/1