ASI BLW80 Npn silicon rf power transistor Datasheet

BLW80
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .280 4L STUD
DESCRIPTION:
The ASI BLW80 is Designed for
Class A,B or C UHF & VHF
Communication applications up to 470
MHz.
A
45°
C
E
B
E
B
FEATURES:
C
D
• PG = 8.0 dB Typical at 470 MHz
• Omnigold™ Metallization System
J
E
I
F
G
H
K
MAXIMUM RATINGS
1.0 A
IC
VCES
PDISS
36 V
17 W @ TC = 25 °C
DIM
MINIMUM
inches / mm
inches / mm
A
1.010 / 25.65
1.055 / 26.80
.220 / 5.59
.230 /5.84
C
.270 / 6.86
.285 / 7.24
D
.003 / 0.08
.007 / 0.18
E
.117 / 2.97
.130 / 3.30
G
θJC
-65 °C to +150 °C
.245 / 6.22
CHARACTERISTICS
J
.175 / 4.45
.217 / 5.51
K
.275 / 6.99
.285 / 7.24
TC = 25 °C
SYMBOL
TEST CONDITIONS
BVCEO
IC = 50 mA
BVCES
IC = 10 mA
BVEBO
IE = 4.0 mA
ICES
VCE = 17 V
hFE
VCE = 5 V
IC = 5.0 A
VCE
IC = 1.5 A
IB = 300 mA
CC
VCB = 12.5 V
PG
VCE = 12.5 V
η
.255 / 6.48
.640 / 16.26
I
10.3 °C/W
.137 / 3.48
.572 / 14.53
H
TSTG
MAXIMUM
B
F
-65 °C to +200 °C
TJ
#8-32 UNC
MINIMUM TYPICAL MAXIMUM
VBE = 0 V
V
36
V
4
V
4.0
10
F = 1. 0 MHz
POUT = 4.0 W
F = 470 MHz
UNITS
17
8.0
35
---
0.75
V
14
pF
15
60
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
mA
DB
%
REV 0
1/1
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