AOSMD AO4420A 30v n-channel mosfet Datasheet

AO4420A
30V N-Channel MOSFET
General Description
Product Summary
The AO4420A uses advanced trench technology to
provide excellent RDS(ON), shoot-through immunity
and body diode characteristics. This device is
suitable for use as a synchronous switch in PWM
applications.
VDS (V) = 30V
ID = 13.7A (VGS = 10V)
RDS(ON) < 10.5mΩ (VGS = 10V)
RDS(ON) < 12mΩ (VGS = 4.5V)
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D
D
D
Bottom View
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
AF
Current
VGS
TA=25°C
TA=70°C
Avalanche Current B
Power Dissipation
B
Junction and Storage Temperature Range
Maximum Junction-to-Lead C
±12
V
ID
9.7
IDM
60
IAR
20
A
60
mJ
EAR
-55 to 150
Symbol
Alpha & Omega Semiconductor, Ltd.
W
2
TJ, TSTG
t ≤ 10s
Steady-State
Steady-State
A
3.1
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Units
V
13.7
Pulsed Drain Current B
Repetitive avalanche energy L=0.3mH
TA=25°C
Maximum
30
RθJA
RθJL
Typ
28
54
21
°C
Max
40
75
30
Units
°C/W
°C/W
°C/W
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AO4420A
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±12V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
0.6
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
40
Static Drain-Source On-Resistance
TJ=125°C
gFS
Forward Transconductance
VDS=5V, ID=13.7A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Gate Source Charge
Units
V
30
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=15V, ID=13.7A
100
nA
2
V
8.3
10.5
12.5
15
9.7
12
mΩ
1
V
5
A
A
mΩ
37
0.76
S
4050
pF
256
pF
168
pF
0.86
1.1
Ω
30.5
36
nC
4.6
Qgd
Gate Drain Charge
8.6
tD(on)
Turn-On DelayTime
5.5
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
VGS=10V, VDS=15V, RL=1.1Ω,
RGEN=3Ω
µA
1.1
3656
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS
Qg(4.5V) Total Gate Charge
Qgs
1
5
VGS=4.5V, ID=12.7A
Output Capacitance
0.004
TJ=55°C
VGS=10V, ID=13.7A
Coss
Max
30
VDS=24V, VGS=0V
IDSS
RDS(ON)
Typ
nC
nC
9
ns
ns
3.4
7
49.8
75
ns
5.9
11
ns
IF=13.7A, dI/dt=100A/µs
22.5
28
Body Diode Reverse Recovery Charge IF=13.7A, dI/dt=100A/µs
12.5
16
ns
nC
Body Diode Reverse Recovery Time
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F.The current rating is based on the t ≤ 10s thermal resistance rating.
Rev 1 : Nov. 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AO4420A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
30
10V
VGS=5V
4.5V
50
25
VGS =2.5V
20
ID(A)
ID(A)
40
30
125°C
15
10
20
25°C
VGS =2.0V
5
10
0
0
0.0
0
1
2
3
4
0.5
5
1.0
1.5
2.0
2.5
3.0
VGS(Volts)
Figure 2: Transfer Characteristics
VDS(Volts)
Figure 1: On-Regions Characteristics
1.8
Normalize ON-Resistance
12
11
RDS(ON)(mΩ )
VGS =4.5V
10
9
8
VGS =10V
7
ID=13.7A
1.6
VGS=4.5V
1.4
VGS=10V
1.2
1.0
0.8
0
6
0
5
10
15
20
25
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
30
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1E+01
30
1E+00
ID=13.7A
25
125°C
IS(A)
RDS(ON)(mΩ )
1E-01
125°C
20
15
1E-02
1E-03
10
25°C
25°C
1E-04
5
1E-05
0
0
2
4
6
8
VGS(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
10
0.0
0.2
0.4
0.6
0.8
1.0
VSD(Volts)
Figure 6: Body-Diode Characteristics
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AO4420A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
10000
VDS=15V
ID=13.7A
Ciss
Capacitance (pF)
VGS(Volts)
4
3
2
1000
Coss
1
Crss
100
0
0
10
20
30
0
40
10
15
20
25
30
VDS(Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
50
100
10µs
RDS(ON)
limited
40
100µs
ID(A)
0.1s
1s
1
1ms
Power (W)
10ms
10
10s
20
DC
0.1
0.1
30
10
TJ(Max) =150°C
TA =25°C
1
10
100
0
0.01
VDS(Volts)
Figure 9: Maximum Forward Biased Safe Operating
Area (Note E)
10
Zθ JA Normalized Transient
Thermal Resistance
5
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (S)
Figure 11: Normalized Maximum Transient Thermal Impedence
Alpha & Omega Semiconductor, Ltd.
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