® SEM ICON DU CTO R 20A SCHOTTKY BARRIER DIODE Full Pack High Voltage Schottky Rectifier Specification Features: 1 2 3 High Voltage Wide Range Selection, 100V, 150V & 200V TO-220FP DEVICE MARKING DIAGRAM High Switching Speed Device Low Forward Voltage Drop Low Power Loss and High Efficiency Guard Ring for Over-voltage Protection L = Tak Cheong Logo xxyy = Monthly Date Code Line 2 = MBRF Line 3 = 20xxxCT Line 4 = Polarity L xxyy Line 2 Line 3 Line 4 High Surge Capability RoHS Compliant Matte Tin(Sn) Lead Finish Terminal Leads Surface is Corrosion Resistant and can withstand to 260°C Wave Soldering or per MIL-STD-750, Method 2026. POLARITY CONFIGURATION 1. Anode 2. Cathode 3. Anode MAXIMUM RATINGS (Per Leg, unless otherwise specified ) Symbol Parameter VRRM VRWM VR Maximum Repetitive Reverse Voltage Working Peak Reverse Voltage Maximum DC Reverse Voltage Average Rectified Forward Current Per Leg Per Package Non-repetitive Peak Forward Surge Current 8.3mS Single Phase @ Rated Load Storage Temperature Range IF(AV) IFSM TSTG TJ MBRF20100CT MBRF20150CT MBRF20200CT Units 100 150 200 V A 10 20 150 A -65 to +150 °C +150 °C Operating Junction Temperature These ratings are limiting values above which the serviceability of the diode may be impaired. THERMAL CHARACTERISTICS TA = 25°C unless otherwise noted Parameter Symbol Value Units RθJC Maximum Thermal Resistance, Junction-to-Case 2.0 °C/W RθJA Maximum Thermal Resistance, Junction-to-Ambient (per leg) 60 °C/W ELECTRICAL CHARACTERISTICS (Per Diode ) Symbol Parameter IR Reverse Current VF Forward Voltage TA = 25°C unless otherwise noted MBRF20100CT MBRF20150CT MBRF20200CT (Note 1) Min Max Min Max Min Max @ rated VR --- 200 --- 200 --- 200 Test Condition IF = 10A IF = 20A 0.85 --- 0.92 --- 0.95 μA 1.00 --- 1.00 Units V 1.25 Note/s: 1. Tested under pulse condition of 300μS. Number: DB-151 March 2010, Revision D Page 1 MBRF20100CT through MBRF20200CT TAK CHEONG TAK CHEONG ® SEM ICON DU CTO R TYPICAL CHARACTERISTICS Figure 2. Junction Capacitance (Per Diode) Figure 1. Forward Current Derating Curve (Per Diode) 1000.0 f = 1MHz Typical Junction Capacitance [pF] Average Forw ard Current [A] 20 16 12 8 4 0 Ta = 25℃ MBRF20100CT MBRF20150CT 100.0 MBRF20200CT 10.0 0 25 50 75 100 125 150 0 5 10 Tc - Case Temperature [ ℃ ] Figure 3. MBRF20100CT Typical Reverse Current (Per Diode) 25 30 35 40 10000.000 IR - Reverse Current [uA]) IR - Reverse Current [uA]) 20 Figure 4. MBRF20150CT Typical Reverse Current (Per Diode) 10000.000 Ta= 150℃ 1000.000 Ta=125℃ 100.000 Ta=75℃ 10.000 1.000 Ta=25℃ 0.100 1000.000 Ta= 150℃ 100.000 Ta=125℃ 10.000 Ta=75℃ 1.000 0.100 0.010 Ta=25℃ 0.001 0.010 0 10 20 30 40 50 60 70 80 90 0 100 15 30 45 60 75 90 105 120 135 150 VR - Reverse Voltage [V] VR - Reverse Voltage [V] Figure 5. MBRF20200CT Typical Reverse Current (Per Diode) Figure 6. MBRF20100CT Typical Forward Voltage (Per Diode) 10000.000 100 1000.000 IF - Forward Current [mA] IR - Reverse Current [uA]) 15 Reverse Voltage [V] Ta= 150℃ 100.000 Ta=125℃ 10.000 Ta=75℃ 1.000 0.100 0.010 10 Ta=150℃ 1 Ta=125℃ Ta=75℃ 0.1 Ta=25℃ Ta=25℃ 0.01 0.001 0 20 40 60 80 100 120 140 VR - Reverse Voltage [V] 160 180 200 0 0.2 0.4 0.6 0.8 1 VF - Instantaneours Forward Voltage [V] Number: DB-151 March 2010, Revision D Page 2 TAK CHEONG ® SEM ICON DU CTO R Figure 7. MBRF20150CT Typical Forward Voltage (Per Diode) Figure 8. MBRF20200CT Typical Forward Voltage (Per Diode) 100 IF - Forward Currect [mA] IF - Forward Current [mA] 100 10 Ta=150℃ 1 Ta=125℃ 0.1 Ta=75℃ 10 1 Ta=150℃ Ta=125℃ Ta=75℃ 0.1 Ta=25℃ Ta=25℃ 0.01 0.01 0 0.2 0.4 0.6 0.8 1 0 0.2 0.4 0.6 0.8 1 VF - Instantaneous Forw ard Voltage [V] VF - Instantaneous Forward Voltage [V] TO220FP SG PACKAGE OUTLINE DIM MILLIMETERS MIN MAX INCHES MIN MAX A1 2.7 3.3 0.106 0.130 A2 15.0 15.7 0.591 0.618 A4 6.2 6.6 0.244 0.260 b 0.5 0.9 0.020 0.035 b1 0.9 1.2 0.035 0.047 b2 1.0 1.2 0.039 0.047 c 0.4 0.6 0.016 0.024 D 9.8 10.3 0.386 0.406 e 2.34 2.74 0.092 0.108 E 4.3 4.6 0.169 0.181 E1 2.5 2.9 0.098 0.114 F 2.6 3.0 0.102 0.118 L 10.3 10.7 0.406 0.421 ØP 3.0 3.4 0.118 0.134 Q 2.3 2.7 0.091 0.106 Number: DB-151 March 2010, Revision D Page 3 TAK CHEONG ® DISC LA I MER NOTIC E NOTICE The information presented in this document is for reference only. Tak Cheong reserves the right to make changes without notice for the specification of the products displayed herein. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Tak Cheong Semiconductor Co., Ltd., or anyone on its behalf, assumes no responsibility or liability for any damagers resulting from such improper use of sale. This publication supersedes & replaces all information reviously supplied. For additional information, please visit our website http://www.takcheong.com, or consult your nearest Tak Cheong’s sales office for further assistance. Number: DB-100 April 14, 2008 / A