Tak Cheong MBRF20150CT 20a schottky barrier diode full pack high voltage schottky rectifier Datasheet

®
SEM ICON DU CTO R
20A SCHOTTKY BARRIER DIODE
Full Pack High Voltage Schottky
Rectifier
Specification Features:
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
1
2
3
High Voltage Wide Range Selection, 100V, 150V & 200V
TO-220FP
DEVICE MARKING DIAGRAM
High Switching Speed Device
Low Forward Voltage Drop
Low Power Loss and High Efficiency
Guard Ring for Over-voltage Protection
L = Tak Cheong Logo
xxyy = Monthly Date Code
Line 2 = MBRF
Line 3 = 20xxxCT
Line 4 = Polarity
L xxyy
Line 2
Line 3
Line 4
High Surge Capability
RoHS Compliant
Matte Tin(Sn) Lead Finish
Terminal Leads Surface is Corrosion Resistant
and can withstand to 260°C Wave Soldering or
per MIL-STD-750, Method 2026.
POLARITY CONFIGURATION
1. Anode
2. Cathode
3. Anode
MAXIMUM RATINGS (Per Leg, unless otherwise specified )
Symbol
Parameter
VRRM
VRWM
VR
Maximum Repetitive Reverse Voltage
Working Peak Reverse Voltage
Maximum DC Reverse Voltage
Average Rectified Forward Current
Per Leg
Per Package
Non-repetitive Peak Forward Surge Current
8.3mS Single Phase @ Rated Load
Storage Temperature Range
IF(AV)
IFSM
TSTG
TJ
MBRF20100CT
MBRF20150CT
MBRF20200CT
Units
100
150
200
V
A
10
20
150
A
-65 to +150
°C
+150
°C
Operating Junction Temperature
These ratings are limiting values above which the serviceability of the diode may be impaired.
THERMAL CHARACTERISTICS
TA = 25°C unless otherwise noted
Parameter
Symbol
Value
Units
RθJC
Maximum Thermal Resistance, Junction-to-Case
2.0
°C/W
RθJA
Maximum Thermal Resistance, Junction-to-Ambient (per leg)
60
°C/W
ELECTRICAL CHARACTERISTICS (Per Diode )
Symbol
Parameter
IR
Reverse Current
VF
Forward Voltage
TA = 25°C unless otherwise noted
MBRF20100CT
MBRF20150CT
MBRF20200CT
(Note 1)
Min
Max
Min
Max
Min
Max
@ rated VR
---
200
---
200
---
200
Test Condition
IF = 10A
IF = 20A
0.85
---
0.92
---
0.95
μA
1.00
---
1.00
Units
V
1.25
Note/s:
1. Tested under pulse condition of 300μS.
Number: DB-151
March 2010, Revision D
Page 1
MBRF20100CT through MBRF20200CT
TAK CHEONG
TAK CHEONG
®
SEM ICON DU CTO R
TYPICAL CHARACTERISTICS
Figure 2. Junction Capacitance (Per Diode)
Figure 1. Forward Current Derating Curve (Per Diode)
1000.0
f = 1MHz
Typical Junction Capacitance
[pF]
Average Forw ard Current [A]
20
16
12
8
4
0
Ta = 25℃
MBRF20100CT
MBRF20150CT
100.0
MBRF20200CT
10.0
0
25
50
75
100
125
150
0
5
10
Tc - Case Temperature [ ℃ ]
Figure 3. MBRF20100CT Typical Reverse Current (Per Diode)
25
30
35
40
10000.000
IR - Reverse Current [uA])
IR - Reverse Current [uA])
20
Figure 4. MBRF20150CT Typical Reverse Current (Per Diode)
10000.000
Ta= 150℃
1000.000
Ta=125℃
100.000
Ta=75℃
10.000
1.000
Ta=25℃
0.100
1000.000
Ta= 150℃
100.000
Ta=125℃
10.000
Ta=75℃
1.000
0.100
0.010
Ta=25℃
0.001
0.010
0
10
20
30
40
50
60
70
80
90
0
100
15
30
45
60
75
90
105
120
135
150
VR - Reverse Voltage [V]
VR - Reverse Voltage [V]
Figure 5. MBRF20200CT Typical Reverse Current (Per Diode)
Figure 6. MBRF20100CT Typical Forward Voltage (Per Diode)
10000.000
100
1000.000
IF - Forward Current [mA]
IR - Reverse Current [uA])
15
Reverse Voltage [V]
Ta= 150℃
100.000
Ta=125℃
10.000
Ta=75℃
1.000
0.100
0.010
10
Ta=150℃
1
Ta=125℃
Ta=75℃
0.1
Ta=25℃
Ta=25℃
0.01
0.001
0
20
40
60
80
100
120
140
VR - Reverse Voltage [V]
160
180
200
0
0.2
0.4
0.6
0.8
1
VF - Instantaneours Forward Voltage [V]
Number: DB-151
March 2010, Revision D
Page 2
TAK CHEONG
®
SEM ICON DU CTO R
Figure 7. MBRF20150CT Typical Forward Voltage (Per Diode)
Figure 8. MBRF20200CT Typical Forward Voltage (Per Diode)
100
IF - Forward Currect [mA]
IF - Forward Current [mA]
100
10
Ta=150℃
1
Ta=125℃
0.1
Ta=75℃
10
1
Ta=150℃
Ta=125℃
Ta=75℃
0.1
Ta=25℃
Ta=25℃
0.01
0.01
0
0.2
0.4
0.6
0.8
1
0
0.2
0.4
0.6
0.8
1
VF - Instantaneous Forw ard Voltage [V]
VF - Instantaneous Forward Voltage [V]
TO220FP SG PACKAGE OUTLINE
DIM
MILLIMETERS
MIN
MAX
INCHES
MIN
MAX
A1
2.7
3.3
0.106
0.130
A2
15.0
15.7
0.591
0.618
A4
6.2
6.6
0.244
0.260
b
0.5
0.9
0.020
0.035
b1
0.9
1.2
0.035
0.047
b2
1.0
1.2
0.039
0.047
c
0.4
0.6
0.016
0.024
D
9.8
10.3
0.386
0.406
e
2.34
2.74
0.092
0.108
E
4.3
4.6
0.169
0.181
E1
2.5
2.9
0.098
0.114
F
2.6
3.0
0.102
0.118
L
10.3
10.7
0.406
0.421
ØP
3.0
3.4
0.118
0.134
Q
2.3
2.7
0.091
0.106
Number: DB-151
March 2010, Revision D
Page 3
TAK CHEONG
®
DISC LA I MER NOTIC E
NOTICE
The information presented in this document is for reference only. Tak Cheong reserves the right to make
changes without notice for the specification of the products displayed herein.
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not
designed to be used with equipment or devices which require high level of reliability and the malfunction of with
would directly endanger human life (such as medical instruments, transportation equipment, aerospace
machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Tak Cheong Semiconductor
Co., Ltd., or anyone on its behalf, assumes no responsibility or liability for any damagers resulting from such
improper use of sale.
This publication supersedes & replaces all information reviously supplied. For additional information, please visit
our website http://www.takcheong.com, or consult your nearest Tak Cheong’s sales office for further assistance.
Number: DB-100
April 14, 2008 / A
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