Production specification Silicon Epitaxial Planar Transistor MMST2222A FEATURES z Epitaxial planar die construction. Pb z Complements the MMST2907A. Lead-free z Ultra-small surface mount package. APPLICATIONS z NPN Silicon Epitaxial Planar Transistor. SOT-323 ORDERING INFORMATION Type No. Marking Package Code MMST2222A K3P SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 600 mA PC Collector Dissipation 200 mW RθJA Thermal resistance, junction to ambient 625 ℃/W Tj,Tstg Junction and Storage Temperature -55 to +150 ℃ F006 Rev.A www.gmicroelec.com 1 Production specification Silicon Epitaxial Planar Transistor MMST2222A ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC=10μA,IE=0 75 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=10μA,IC=0 6 V Collector cut-off current ICBO VCB=60V,IE=0 VCB=60V,IE=0 TA=150℃ 10 nA μA Collector cut-off current ICEX VCE=60V,VEB(OFF)=3.0V 10 nA Base cut-off current IBL VCE=60V,VEB(OFF)=3.0V 20 nA Emitter cut-off current IEBO VEB=3.0V,IC=0 10 nA DC current gain hFE VCE=10V,IC=0.1mA VCE=10V,IC=1mA VCE=10V,IC=10mA VCE=10V,IC=150mA VCE=10V,IC=500mA VCE=1V,IC=150mA Collector-emitter saturation voltage VCE(sat) ICE=500mA,IB=50mA ICE=150mA,IB=15mA Base-emitter saturation voltage VBE(sat) ICE=500mA,IB=50mA ICE=150mA,IB=15mA Transition frequency fT VCE=20V, IC= 20mA,f=100MHz Output capacitance Cobo VCB=10V,IE=0,f=1MHz 8 pF Input capacitance Cibo VEB=0.5V,IC=0,f=1MHz 25 pF Noise figure NF VCE=10V,IC=100μA RS=1.0KΩ,f=1.0kHz 4.0 dB Delay Time td 10 ns Rise Time tr 25 ns Storang Time ts 225 ns Fall Time tf 60 ns F006 Rev.A VCC=30V,IC=150mA VBE(OFF)=-0.5V,IB1=15mA VCC=30V,IC=150mA IB1= IB2=15mA MIN TYP 35 50 75 100 40 35 MAX UNIT 300 1.0 0.3 2.0 1.2 300 V V MHz www.gmicroelec.com 2 Production specification Silicon Epitaxial Planar Transistor MMST2222A PACKAGE OUTLINE Plastic surface mounted package SOT-323 A SOT-323 E K B C D J G Dim Min Max A 2.00 2.20 B 1.15 1.35 C 0.95 Typical D 0.30 Typical E 0.25 0.40 G 1.2 1.4 H 0.02 0.10 H J K 0.10 Typical 2.20 2.40 All Dimensions in mm SOLDERING FOOTPRINT 0.65 0.65 1.90 0.90 0.70 PACKAGE Unit : mm INFORMATION Device Package Shipping MMST2222A SOT-323 3000/Tape&Reel F006 Rev.A www.gmicroelec.com 3