MBRTA50020 thru MBRTA50040R
Silicon Power
Schottky Diode
VRRM = 20 V - 40 V
IF(AV) = 500 A
Features
• High Surge Capability
• Types from 20 V to 40 V VRRM
Heavy Three Tower Package
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
Symbol
Conditions
MBRTA50020(R) MBRTA50030(R) MBRTA50035(R) MBRTA50040(R) Unit
VRRM
20
30
VRMS
14
VDC
Tj
Tstg
20
-55 to 150
-55 to 150
35
40
V
21
25
28
V
30
-55 to 150
-55 to 150
35
-55 to 150
-55 to 150
40
-55 to 150
-55 to 150
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Symbol
Conditions
Average forward current
(per pkg)
IF(AV)
TC = 100 °C
500
500
500
500
A
Peak forward surge current
(per leg)
IFSM
tp = 8.3 ms, half sine
3500
3500
3500
3500
A
Maximum instantaneous
forward voltage (per leg)
VF
IFM = 250 A, Tj = 25 °C
0.70
0.70
0.70
0.70
V
Reverse current at rated
DC blocking voltage (per
leg)
IR
Tj = 25 °C
Tj = 100 °C
1
10
1
10
1
10
1
10
mA
Tj = 150 °C
50
50
50
50
0.30
0.30
0.30
0.30
Parameter
MBRTA50020(R) MBRTA50030(R) MBRTA50035(R) MBRTA50040(R) Unit
Thermal characteristics
Thermal resistance,
junction - case (per leg)
RΘJC
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1
°C/W
MBRTA50020 thru MBRTA50040R
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2
MBRTA50020 thru MBRTA50040R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
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3