Zetex BC80725-5BZ Pnp silicon planar medium power transistor Datasheet

SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
BC807
ISSUE 3 – MARCH 2001
PARTMARKING DETAILS
BC80716 –
5AZ
BC80725 –
5BZ
BC80740 –
5CZ
E
C
B
COMPLEMENTARY TYPE
BC817
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
V CBO
-50
V
V CEO
-45
V
Emitter-Base Voltage
V EBO
-5
V
Peak Pulse Current
I CM
-1
A
Continuous Collector Current
IC
-500
mA
Base Current
IB
-100
mA
Peak Base Current
I BM
-200
mA
Power Dissipation at T amb=25°C
P tot
330
mW
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
Collector Cut-Off
Current
I CBO
MIN.
TYP.
MAX. UNIT CONDITIONS.
-0.1
-0.5
µA
V CB=-20V, I E=0
V CB=-20V, I E=0, T amb=150°C
Emitter Cut-Off Current I EBO
-10
µA
V EB=-5V, I C=0
Collector-Emitter
Saturation Voltage
V CE(sat)
-700
mV
I C=-500mA, I B=-50mA*
Base-Emitter
Saturation Voltage
V BE(on)
-1.2
V
I C=-500mA, V CE=-1V*
Static Forward Current
Transfer Ratio
h FE
BC80716
100
250
I C=-100mA, V CE=-1V*
BC80725
160
400
I C=-100mA, V CE=-1V*
250
600
BC80740
All bands
I C=-100mA, V CE=-1V*
I C=-500mA, V CE=-1V*
40
Transition Frequency
fT
100
MHz
I C=-10mA, V CE=-5V
f=35MHz
Output Capacitance
C obo
8.0
pF
V CB=-10V f=1MHz
*Measured under pulsed conditions.
Spice parameter data is available upon request for these devices
tba
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