SanRex DKR200AB60 Diode module Datasheet

DIODE MODULE(NON-ISOLATED TYPE)
DKR200AB60
DKR200AB60 is a high speed (fast recovery) dual diode module designed for high
power switching application. DKR200AB60 is suitable for high frequency application
requiring low loss and high speed control.
● High Speed Diode trr≦200ns
● IF(AV)=100A(each device)
● High Surge Capability
(Applications)
Switching Power Supply, Inverter Welding Power Supply
Power Supply for Telecommunication
20.
0±0.
1
2−
26.
5
depth 8mm
6.5
2−12.
0
26.
5
MAX16
2−M6
5
.
4
A
92.
0±0.
1
80.
0±0.
3
35.
0±0.
2
A
MARKING AREA
Tc point(depth 2mm)
Unit:㎜
K
■Maximum Ratings
(Tj=25℃ unless otherwise specified)
Ratings
Symbol
Item
VRRM
Repetitive peak reverse Voltage
600
V
VR(DC)
D.C. Reverse Voltage
480
V
Symbol
IF
Item
Per module
Forward
Current
Condition
Unit
200
A
100
Per leg
1/ cycle,
2
1/ cycle,
2
I2t
I2t (for fusing)
Value for one cycle surge current
Tj
Tstg
Ratings
D.C. TC=133℃
Surge Forward Current
IFSM
Unit
DKR200AB60
60HZ, Peak value. non-repetitive
3600
50HZ, Peak value. non-repetitive
3200
A
54000
A2S
Operating Junction Temperature
−40 to +150
℃
Storage Temperature
−40 to +125
℃
Mounting
Torque
Mounting
(M6)
Recommended Value 25-40
Mounting
(M4)
Recommended Value 10-14
Terminal
(M6)
Recommended Value 25-40
Mass
48
(㎏f・B)
4.7
Recommended Value 2.5-3.9
N・m
15
(㎏f・B)
1.5
Recommended Value 1.0-1.4
N・m
48
(㎏f・B)
4.7
Recommended Value 2.5-3.9
N・m
80
Typical Value
g
■Electrical Characteristics
Symbol
Item
Condition
Ratings
Min.
Typ. Max.
Unit
IRRM
Repetitive Peak Reverse Current
Tj=125℃, VD=VRRM
200
mA
VFM
Forward Voltage Drop
IF=200A, Inst.measurement
1.4
V
trr
Reverse Recovery Time
IF=200A,ーdi/dt=200A/μs
Rth(j-c) Thermal Impedance
SanRex
Junction to case, 1/2module
100
200
ns
0.063
℃/W
®
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected]
DKR200AB60
Reverse Recovery Time trr(ns)
Reverse Recovery Charge Qrr(μC)
Reverse Recovery CurrentI
r
r
(A)
Forward Characteristics
1000
Forward Current I(A)
F
1000
Reverse Recovery Characteristics
Trr
Trr
100
100
Max
T
j=25℃
10
1
0
0.
5
1
1.
5
2
Irr
10
Irr
Qrr
1
Qrr
0.
1
0
2.
5
50
Reverse Recovery Time trr(ns)
Reverse Recovery Charge Qrr(μC)
Reverse Recovery CurrentI
r
r
(A)
Transient Thermal Impedance(℃/W)
Transient Thermal Impedance
1000
150
200
250
1.0Eー2
ー3
1.0E
300
350
400
Reverse Recovery Characteristics
IF=200[A]
Trr
100
1.0Eー1
Max.
Junction to Case
Irr
Trr
Irr
10
Qrr
1
Qrr
0.
1
1.0Eー4
ー5
1.0E
1.0Eー6
100
Forward Current I(A)
F
Forward Voltage Drop V(V)
F
1.0Eー0
T
j=25℃
T
j=150℃
-di/dt=200[A/μs]
1.0Eー5
1.0Eー4
1.0Eー3 1.0Eー2
Time t(sec.)
1.0Eー1
1.0E0
1.0E1
0.
01
10
T
j=25℃
T
j=150℃
20
50
100
200
500
1000
Critical rate of rise of on-state current di/dt(A/μs)
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected]
Similar pages