IPB100N04S2-04 IPP100N04S2-04 OptiMOS® Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS(on),max (SMD version) 3.3 mΩ ID 100 A • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO263-3-2 • Green package (lead free) PG-TO220-3-1 • Ultra low Rds(on) • 100% Avalanche tested Type Package Ordering Code Marking IPB100N04S2-04 PG-TO263-3-2 SP0002-19061 PN0404 IPP100N04S2-04 PG-TO220-3-1 SP0002-19056 PN0404 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Value 100 Unit A 100 Pulsed drain current2) I D,pulse T C=25 °C 400 Avalanche energy, single pulse2) E AS I D=80A 810 mJ Gate source voltage4) V GS ±20 V Power dissipation P tot 300 W Operating and storage temperature T j, T stg -55 ... +175 °C Rev. 1.0 T C=25 °C page 1 2006-03-02 IPB100N04S2-04 IPP100N04S2-04 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - 0.5 Thermal resistance, junction ambient, leaded R thJA - - 62 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area5) - - 40 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 40 - - Gate threshold voltage V GS(th) V DS=V GS, I D=250 µA 2.1 3.0 4.0 Zero gate voltage drain current I DSS V DS=40 V, V GS=0 V, T j=25 °C - 0.01 1 - 1 100 V DS=40 V, V GS=0 V, T j=125 °C2) V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance RDS(on) V GS=10 V, I D=80 A, - 2.8 3.6 mΩ V GS=10 V, I D=80 A, SMD version - 2.5 3.3 Rev. 1.0 page 2 2006-03-02 IPB100N04S2-04 IPP100N04S2-04 Parameter Symbol Values Conditions Unit min. typ. max. - 5300 - - 2200 - Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 580 - Turn-on delay time t d(on) - 27 - Rise time tr - 46 - Turn-off delay time t d(off) - 56 - Fall time tf - 33 - Gate to source charge Q gs - 26 37 Gate to drain charge Q gd - 46 80 Gate charge total Qg - 125 172 Gate plateau voltage V plateau - 4.9 - V - - 100 A - - 400 V GS=0 V, V DS=25 V, f =1 MHz V DD=20 V, V GS=10 V, I D=80 A, R G=2.2 Ω pF ns Gate Charge Characteristics2) V DD=32 V, I D=100 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD V GS=0 V, I F=80 A, T j=25 °C - 0.9 1.3 V Reverse recovery time2) t rr V R=20 V, I F=I S, di F/dt =100 A/µs - 66 80 ns Reverse recovery charge2) Q rr V R=20 V, I F=I S, di F/dt =100 A/µs - 153 190 nC T C=25 °C 1) Current is limited by bondwire; with an R thJC = 0.5K/W the chip is able to carry 210A at 25°C. For detailed information see Application Note ANPS071E at www.infineon.com/optimos 2) Defined by design. Not subject to production test. 3) See diagram 13 4) Qualified at -20V and +20V. 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2006-03-02 IPB100N04S2-04 IPP100N04S2-04 1 Power dissipation 2 Drain current P tot = f(T C); V GS ≥ 4 V I D = f(T C); V GS ≥ 10 V 350 120 300 100 250 200 I D [A] P tot [W] 80 150 60 40 100 20 50 0 0 0 50 100 150 200 0 50 T C [°C] 100 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 100 1 µs 0.5 10 µs 100 µs 100 10-1 0.1 I D [A] Z thJC [K/W] 1 ms 0.05 10-2 10 0.01 10-3 1 0.1 1 10 100 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] V DS [V] Rev. 1.0 10-7 single pulse page 4 2006-03-02 IPB100N04S2-04 IPP100N04S2-04 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = (I D); T j = 25 °C parameter: V GS parameter: V GS 400 12 10V 5.5V 350 6.5V 10 300 8 250 R DS(on) [mΩ] I D [A] 6.0V 200 150 6 6V 5.5V 4 6.5V 100 10V 5.0V 2 50 0 0 2 4 6 8 0 10 0 20 40 V DS [V] 60 80 100 120 I D [A] 7 Typ. transfer characteristics 8 Typ. Forward transconductance I D = f(V GS); V DS = 6V g fs = f(I D); T j = 25°C parameter: T j parameter: g fs 200 200 180 160 150 140 g fs [S] I D [A] 120 100 100 80 60 50 40 175 °C 20 25 °C -55 °C 0 0 1 2 3 4 5 6 7 Rev. 1.0 0 50 100 150 200 I D [A] V GS [V] page 5 2006-03-02 IPB100N04S2-04 IPP100N04S2-04 9 Typ. Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(ON) = f(T j) V GS(th) = f(T j); V GS = V DS parameter: I D = 80 A; VGS = 10 V parameter: I D 5 4 3.5 3 1250µA 250µA 2.5 V GS(th) [V] R DS(on) [mΩ] 4 3 2 1.5 2 1 0.5 1 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Typical forward diode characteristicis C = f(V DS); V GS = 0 V; f = 1 MHz IF = f(VSD) parameter: T j 104 103 Ciss Coss I F [A] C [pF] 102 103 Crss 102 100 0 5 10 15 20 25 30 V DS [V] Rev. 1.0 25 °C 175 °C 101 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD [V] page 6 2006-03-02 IPB100N04S2-04 IPP100N04S2-04 13 Typical avalanche energy 14 Typ. gate charge E AS = f(T j) V GS = f(Q gate); I D = 100A pulsed parameter: I D = 80A 900 12 800 8V 32V 10 700 600 E AS [mJ] 8 V GS [V] 500 400 300 6 4 200 2 100 0 0 25 75 125 0 175 40 80 120 Q gate [nC] T j [°C] 15 Typ. drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS) = f(T j); I D = 1 mA 48 V GS 46 Qg V BR(DSS) [V] 44 42 40 Q gate 38 Q gs Q gd 36 -60 -20 20 60 100 140 180 T j [°C] Rev. 1.0 page 7 2006-03-02 IPB100N04S2-04 IPP100N04S2-04 Published by Infineon Technologies AG St.-Martin-Straße 53 D-81541 München © Infineon Technologies AG 2004 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies Office (www.infineon.com) Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies Office. effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2006-03-02