Diodes DMP2123L-7 P-channel enhancement mode field effect transistor Datasheet

DMP2123L
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
NEW PRODUCT
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Mechanical Data
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•
Low RDS(ON):
•
72 mΩ @VGS = -4.5V
•
108 mΩ @VGS = -2.7V
•
123 mΩ @VGS = -2.5V
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
"Green" Device (Note 4)
Case: SOT-23
Case Material - Molded Plastic, “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish - Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram Below
Marking Information: See Page 4
Ordering Information: See page 4
Weight: 0.008 grams (approximate)
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SOT-23
Drain
D
Gate
S
G
Source
TOP VIEW
TOP VIEW
Internal Schematic
Maximum Ratings
@TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
±12
V
ID
-3.0
-2.4
A
IDM
-15
A
IS
2.0
A
Symbol
PD
Value
1.4
Unit
W
RθJA
90
°C/W
TJ, TSTG
-55 to +150
°C
Drain Current (Note 1) Continuous
TA = 25°C
TA = 70°C
Pulsed Drain Current (Note 2)
Body-Diode Continuous Current (Note 1)
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1); Steady-State
Operating and Storage Temperature Range
Notes:
1. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t ≤10s.
2. Repetitive Rating, pulse width limited by junction temperature.
3. No purposefully added lead.
4. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DMP2123L
Document number: DS31440 Rev. 1 - 2
1 of 4
www.diodes.com
May 2008
© Diodes Incorporated
DMP2123L
NEW PRODUCT
Electrical Characteristics
@TA = 25°C unless otherwise specified
Characteristic
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
On State Drain Current (Note 5)
TJ = 25°C
Static Drain-Source On-Resistance (Note 5)
Forward Transconductance (Note 5)
Diode Forward Voltage (Note 5)
Maximum Body-Diode Continuous Current (Note 1)
DYNAMIC PARAMETERS (Note 6)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes:
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
VGS(th)
ID (ON)
-20
⎯
⎯
-0.6
-15
⎯
⎯
-1
±100
-1.25
⎯
72
108
123
V
μA
nA
V
A
RDS (ON)
⎯
⎯
⎯
⎯
⎯
51
87
99
gFS
VSD
IS
⎯
⎯
⎯
7.3
0.79
⎯
⎯
-1.26
1.7
S
V
A
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Ciss
Coss
Crss
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
7.3
2.0
1.9
12
20
38
41
443
128
101
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
mΩ
Test Condition
ID = -250μA, VGS = 0V
VDS = -20V, VGS = 0V
VDS = 0V, VGS = ±12V
VDS = VGS, ID = -250μA
VGS = -4.5V, VDS = -5V
VGS = -4.5V, ID = -3.5A
VGS = -2.7V, ID = -3.0A
VGS = -2.5V, ID = -2.6A
VDS = -10V, ID = -3.0A
IS = -1.7A, VGS = 0V
⎯
VGS = -4.5V, VDS = -10V, ID = -3.0A
VGS = -4.5V, VDS = -10V, ID = -3.0A
VGS = -4.5V, VDS = -10V, ID = -3.0A
VDS = -10V, VGS = -4.5V,
RL = 10Ω, RG = 6Ω
VDS = -16V, VGS = 0V
f = 1.0MHz
5. Test pulse width t = 300μs.
6. Guaranteed by design. Not subject to production testing.
VDS = -5V
Pulsed
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
DMP2123L
Document number: DS31440 Rev. 1 - 2
2 of 4
www.diodes.com
May 2008
© Diodes Incorporated
CT, CAPACITANCE (pF)
Ciss
VGS = -2.5V
Coss
Crss
f = 1 MHz
VGS = 0V
VGS = -4.5V
VGS = -10V
0
-ID, DRAIN CURRENT (A)
Fig. 3 On-Resistance vs. Drain Current and Gate Voltage
-ID = 250µA
4
8
12
16
-VDS, DRAIN-SOURCE VOLTAGE (V)
20
Fig. 4 Typical Total Capacitance
RDS(ON), STATIC DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω)
NEW PRODUCT
DMP2123L
VGS = -4.5V
ID = -3.0A
VGS = -10V
ID = -3.5A
VGS = -2.5V
ID = -1.0A
TA, AMBIENT TEMPERATURE (C)
Fig. 6 Normalized Static Drain-Source On-Resistance
vs. Ambient Temperature
DMP2123L
Document number: DS31440 Rev. 1 - 2
3 of 4
www.diodes.com
May 2008
© Diodes Incorporated
DMP2123L
Ordering Information
(Note 7)
Part Number
DMP2123L-7
Packaging
3000/Tape & Reel
7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
M1P
Date Code Key
Year
Code
2007
U
M1P = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: U = 2007
M = Month ex: 9 = September
YM
NEW PRODUCT
Notes:
Case
SOT-23
2008
V
2009
W
2010
X
2011
Y
2012
Z
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Package Outline Dimensions
A
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
F
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
8°
0°
α
All Dimensions in mm
B C
TOP VIEW
G
H
K
M
J
D
F
L
Suggested Pad Layout
Y
Z
C
X
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
E
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DMP2123L
Document number: DS31440 Rev. 1 - 2
4 of 4
www.diodes.com
May 2008
© Diodes Incorporated
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