MBR30H90PT & MBR30H100PT Vishay Semiconductors New Product formerly General Semiconductor High-Voltage Dual Schottky Rectifiers Reverse Voltage 90 to 100V Forward Current 30A Features TO-247AD 0.645 (16.4) 0.625 (15.9) 0.245 (6.2) 0.225 (5.7) 0.203 (5.16) 0.193 (4.90) 0.323 (8.2) 0.313 (7.9) 0.078 REF (1.98) 10 ° 30 0.170 (4.3) • Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 • Dual rectifier construction, positive center-tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • High current capability, low forward voltage drop • High surge capability • For use in low voltage, high frequency inverters, free-wheeling, and polarity protection applications • Guardring for overvoltage protection 10 TYP. BOTH SIDES 0.840 (21.3) 0.142 (3.6) 0.138 (3.5) 0.820 (20.8) 1 2 3 0.086 (2.18) 0.076 (1.93) 1 REF. BOTH SIDES 0.127 (3.22) 0.160 (4.1) 0.140 (3.5) 0.225 (5.7) 0.205 (5.2) 0.108 (2.7) 0.117 (2.97) 0.795 (20.2) 0.775 (19.6) Mechanical Data 0.118 (3.0) PIN 1 PIN 2 PIN 3 CASE Dimensions in inches and (millimeters) 0.030 (0.76) 0.048 (1.22) 0.044 (1.12) 0.020 (0.51) Case: JEDEC TO-247AD molded plastic body Terminals: Lead solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds, 0.17” (4.3mm) from case Polarity: As marked Mounting Position: Any Mounting Torque: 10 in-lbs max. Weight: 0.2 oz., 5.6 g Maximum Ratings & Thermal Characteristics Parameter Symbol Ratings per leg at TA = 25°C unless otherwise specified. MBR30H90PT MBR30H100PT Unit Maximum repetitive peak reverse voltage VRRM 90 100 V Maximum working peak reverse voltage VRWM 90 100 V VDC 90 100 V Maximum DC blocking voltage IF(AV) 30 15 A Peak repetitive forward current per leg at TC=105°C (rated VR, square wave, 20 KHZ) IFRM 30 A Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 265 A Peak repetitive reverse surge current at tp = 2µs, f = 1kHz IRRM 1.0 A Non-repetitive avalanche energy (IAS = 0.5A, L = 60mH) EAS 7.5 mJ Voltage rate of change at (rated VR) dv/dt 10,000 V/µs Thermal resistance from junction to case per leg RθJC 1.6 °C/W TJ –65 to +175 °C Maximum average forward rectified current Total device Per leg Operating junction and storage temperature range Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Parameter Maximum instantaneous forward voltage per leg at: (1) IF IF IF IF = = = = Symbol MBR30H90PT MBR30H100PT Unit 25°C 125°C 25°C 125°C VF 0.82 0.67 0.93 0.80 V TJ = 25°C TJ = 125°C IR 5.0 6.0 µA mA 15A, TJ 15A, TJ 30A, TJ 30A, TJ Maximum instantaneous reverse current at rated DC blocking voltage per leg (1) = = = = Note: (1) Pulse test: 300µs pulse width, 1% duty cycle Document Number 88678 02-Jul-02 www.vishay.com 1 MBR30H90PT & MBR30H100PT Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves Fig. 2 – Typical Instantaneous Forward Characteristics Per Leg Fig. 1 – Forward Derating Curve IF -- Instantaneous Forward Current (A) 35 Average Forward Current (A) 30 25 20 15 10 5 0 0 25 50 75 100 125 150 100 TJ = 175°C 10 150°C 1.0 125°C 100°C 0.1 25°C 0.01 175 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 10 Case Temperature (°C) Instantaneous Forward Voltage (V) Fig. 3 – Typical Reverse Characteristics Per Leg Fig. 4 – Typical Junction Capacitance Per Leg 10000 10000 TJ = 150°C Junction Capacitance (pF) IR -- Instantaneous Reverse Current (µA) 1000 125°C 100 100°C 10 1 0.1 25°C 0.01 20 40 60 80 Percent of Rated Peak Reverse Voltage (%) www.vishay.com 2 100 1000 100 10 0.1 1 10 100 1000 Reverse Voltage (V) Document Number 88678 02-Jul-02