MITSUBISHI IGBT MODULES CM600DU-24NFH HIGH POWER SWITCHING USE CM600DU-24NFH ¡IC ................................................................... 600A ¡VCES ......................................................... 1200V ¡Insulated Type ¡2-elements in a pack APPLICATION High frequency switching use (30kHz to 60kHz). Gradient amplifier, Induction heating, power supply, etc. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 110 (8.5) (8.5) 14 3-M6 NUTS 14 25 7 E2 G2 17.5 G1 E1 CIRCUIT DIAGRAM (9) 18.25 C1 14 25 18 7 21.5 18 TAB #110. t = 0.5 LABEL 21.2 29 +1.0 –0.5 8.5 18 C1 E2 80 15 4-φ6.5 MOUTING HOLES E2 C2E1 6 G1 E1 9.25(10) (22.2) C2E1 62 ±0.25 6 E2 G2 (9) 93 ±0.25 Aug.2004 MITSUBISHI IGBT MODULES CM600DU-24NFH HIGH POWER SWITCHING USE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) PC’ (Note 3) Tj Tstg Viso — — — (Tj = 25°C) Parameter Collector current Emitter current Maximum collector dissipation Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weight ELECTRICAL CHARACTERISTICS Symbol Conditions Collector-emitter voltage Gate-emitter voltage G-E Short C-E Short Operation Pulse Operation Pulse TC = 25°C TC’ = 25°C*4 Ratings 1200 ±20 600 1200 600 1200 1500 3670 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 580 (Note 2) (Note 2) (Note 2) (Note 2) Main Terminal to base plate, AC 1 min. Main Terminal M6 Mounting holes M6 Typical value Unit V V A A A A W W °C °C V N•m N•m g (Tj = 25°C) Test conditions Parameter Limits Typ. — Max. 1 Unit ICES Collector cutoff current VCE = VCES, VGE = 0V Min. — VGE(th) Gate-emitter threshold voltage IC = 60mA, VCE = 10V 4.5 6 7.5 V IGES Gate leakage current Collector-emitter saturation voltage (Note 4) Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage VGE = VGES, VCE = 0V — — — — — — — — — — — — — — — — — — — 0.52 — 5.0 5.0 — — — 2700 — — — — — 28 — — — 0.02 — — — 2.0 6.5 — 95 8.0 1.8 — 400 120 700 150 250 — 3.5 0.083 0.15 — µA VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q Rth(j-c’)R RG Thermal resistance*1 Contact thermal resistance Thermal resistance*4 IC = 600A, VGE = 15V Tj = 25°C Tj = 125°C VCE = 10V VGE = 0V VCC = 600V, IC = 600A, VGE = 15V VCC = 600V, IC = 600A VGE1 = VGE2 = 15V RG = 0.52Ω, Inductive load switching operation IE = 600A IE = 600A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to fin, Thermal compound Applied*2 (1/2 module) IGBT part (1/2 module) FWDi part (1/2 module) External gate resistance 0.034*3 0.06*3 5.2 mA V nF nF nF nC ns ns ns ns ns µC V °C/W °C/W °C/W °C/W °C/W Ω *1 : TC measured point is shown in page OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. *3 : If you use this value, Rth(f-a) should be measured just under the chips. *4 : TC’ measured point is just under the chips. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. No short circuit capability is designed. Aug.2004 MITSUBISHI IGBT MODULES CM600DU-24NFH HIGH POWER SWITCHING USE PERFORMANCE CURVES TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) Tj = 25°C 1000 1200 14 VGE=20 (V) VCE = 10V 13 COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A) 1200 15 12 800 600 11 400 10 200 9 1000 800 600 400 200 Tj = 25°C Tj = 125°C 8 0 2 4 6 8 0 10 5 10 15 20 GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 9 VGE = 15V 8 Tj = 25°C Tj = 125°C 7 6 5 4 3 2 1 0 0 200 400 600 800 Tj = 25°C IC = 1200A 8 6 IC = 600A 4 IC = 240A 2 6 8 10 12 14 16 18 20 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE CHARACTERISTICS (TYPICAL) 103 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 103 Tj = 125°C 7 5 Tj = 25°C 3 2 102 7 5 3 2 101 10 0 1000 1200 104 EMITTER CURRENT IE (A) 0 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 0 0 1 2 3 4 5 EMITTER-COLLECTOR VOLTAGE VEC (V) 7 5 3 2 102 7 5 3 2 Cies 101 7 5 3 2 Coes 100 Cres 7 5 3 2 VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Aug.2004 MITSUBISHI IGBT MODULES CM600DU-24NFH HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) SWITCHING TIME (ns) 7 5 td(off) 3 2 td(on) tf 102 7 5 3 2 tr 101 7 5 3 2 100 1 10 2 3 5 7 102 Conditions: VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 125°C Inductive load 2 3 5 7 103 REVERSE RECOVERY TIME trr (ns) 103 5 5 Irr 3 3 2 2 trr 102 102 7 5 7 3 2 101 1 10 2 3 5 7 102 Conditions: 5 VCC = 600V VGE = ±15V 3 RG = 1.0Ω 2 Tj = 25°C Inductive load 101 2 3 5 7 103 COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 7 5 3 2 Single Pulse TC = 25°C 10–1 10–1 7 5 3 2 7 5 3 2 10–2 10–2 7 5 3 Per unit base = 2 7 5 3 2 Rth(j–c) = 0.083°C/W 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 103 Tj = 25°C 7 7 REVERSE RECOVERY CURRENT Irr (A) HIGH POWER SWITCHING USE 7 5 3 2 Single Pulse TC = 25°C 10–1 10–1 7 5 3 2 7 5 3 2 10–2 10–2 7 5 3 Per unit base = 2 Rth(j–c) = 0.15°C/W 10–3 7 5 3 2 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 600A VCC = 400V 15 VCC = 600V 10 5 0 0 500 1000 1500 2000 2500 3000 3500 4000 GATE CHARGE QG (nC) Aug.2004