FGPF50N30T tm 300V, 50A PDP IGBT Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. • Low saturation voltage: VCE(sat) =1.4V @ IC = 30A • High input impedance • Fast switching • RoHS compliant Applications • PDP System C G TO-220F 1 1.Gate 2.Collector 3.Emitter E Absolute Maximum Ratings Symbol Description Ratings Units VCES Collector to Emitter Voltage 300 V VGES Gate to Emitter Voltage ± 30 V ICM (1) Pulsed Collector Current 120 A PD @ TC = 25oC o Maximum Power Dissipation @ TC = 25 C 46.8 W Maximum Power Dissipation @ TC = 100oC 18.7 W TJ Operating Junction Temperature -55 to +150 o C Tstg Storage Temperature Range -55 to +150 o C TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 o C Thermal Characteristics Symbol Parameter Typ. Max. Units RθJC(IGBT) Thermal Resistance, Junction to Case - 2.67 o C/W RθJA Thermal Resistance, Junction to Ambient - 62.5 o C/W Notes: 1: Repetitive test , Pulse width=100usec , Duty=0.1 * IC_pluse limited by max Tj ©2008 Fairchild Semiconductor Corporation FGPF50N30T Rev. A 1 www.fairchildsemi.com FGPF50N30T 300V, 50A PDP IGBT January 2008 Device Marking Device Package Packaging Type FGPF50N30T FGPF50N30TTU TO-220F Rail / Tube Electrical Characteristics of the IGBT Symbol Parameter Max Qty Qty per Tube per Box 50ea - TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 300 - - V Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA ∆BVCES ∆TJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 250µA - 0.3 - V/oC ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 250 µA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA IC = 250µA, VCE = VGE 3.0 4.5 5.5 V On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 15A, VGE = 15V - 1.1 1.5 V IC = 30A, VGE = 15V - 1.4 - V IC = 50A, VGE = 15V, TC = 25oC - 1.65 - V IC = 50A, VGE = 15V, TC = 125oC - 1.60 - V - 2320 - pF VCE = 30V, VGE = 0V, f = 1MHz - 92 - pF - 80 - pF - 31 - ns Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf td(on) VCC = 200V, IC = 30A, RG = 15Ω, VGE = 15V, Resistive Load, TC = 25oC - 78 - ns - 156 - ns Fall Time - 200 300 ns Turn-On Delay Time - 30 - ns tr Rise Time td(off) Turn-Off Delay Time tf Qg Qge Gate to Emitter Charge Qgc Gate to Collector Charge VCC = 200V, IC = 30A, RG = 15Ω, VGE = 15V, Resistive Load, TC = 125oC - 78 - ns - 163 - ns Fall Time - 260 - ns Total Gate Charge - 97 - nC - 15 - nC - 41 - nC FGPF50N30T Rev. A VCE = 200V, IC = 30A, VGE = 15V 2 www.fairchildsemi.com FGPF50N30T 300V, 50A PDP IGBT Package Marking and Ordering Information FGPF50N30T 300V, 50A PDP IGBT Typical Performance Characteristics Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics 120 120 o TC = 25 C o TC = 125 C 20V 20V 15V 12V 10V 80 VGE = 8V 40 0 0.0 1.5 3.0 4.5 Collector-Emitter Voltage, VCE [V] 10V 80 VGE = 8V 40 0 0.0 6.0 Figure 3. Typical Saturation Voltage Characteristics 1.5 3.0 4.5 Collector-Emitter Voltage, VCE [V] 6.0 Figure 4. Transfer Characteristics 120 120 Common Emitter VCE = 20V Common Emitter VGE = 15V 100 o o Collector Current, IC [A] Collector Current, IC [A] 12V Collector Current, IC [A] Collector Current, IC [A] 15V TC = 25 C o TC = 125 C 80 60 40 TC = 25 C o TC = 125 C 80 40 20 0 0 0 1 2 3 Collector-Emitter Voltage, VCE [V] 2 4 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 20 Common Emitter VGE = 15V 1.8 50A 1.6 30A 1.2 IC = 15A 1.0 0.8 25 14 3 Common Emitter o TC = 25 C 16 12 8 30A 4 50A IC = 15A 0 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] FGPF50N30T Rev. A 6 8 10 12 Gate-Emitter Voltage,VGE [V] Figure 6. Saturation Voltage vs. VGE 2.0 1.4 4 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGPF50N30T 300V, 50A PDP IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE Figure 8. Capacitance Characteristics 20 10000 Common Emitter Common Emitter VGE = 0V, f = 1MHz TC = 125 C Cies 16 Capacitance [pF] Collector-Emitter Voltage, VCE [V] o 12 8 o TC = 25 C Coes 1000 Cres 30A 4 50A 100 IC = 15A 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 50 20 Figure 9. Gate charge Characteristics 1 10 Collector-Emitter Voltage, VCE [V] 30 Figure 10. SOA Characteristics 15 500 Common Emitter TC = 25 C VCC = 100V 200V 9 6 3 0 0 25 50 75 Gate Charge, Qg [nC] 100µs 10 1ms 10 ms 1 DC Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature 0.1 0.01 0.1 100 Figure 11. Turn-on Characteristics vs. Gate Resistance 1 10 100 Collector-Emitter Voltage, VCE [V] 500 Figure 12. Turn-off Characteristics vs. Gate Resistance 5500 400 Common Emitter VCC = 200V, VGE = 15V IC = 30A tr Switching Time [ns] Switching Time [ns] 10µs 100 12 Collector Current, Ic [A] Gate-Emitter Voltage, VGE [V] o 100 td(on) Common Emitter VCC = 200V, VGE = 15V IC = 30A o 1000 TC = 25 C td(off) o TC = 125 C tf 100 o TC = 25 C o TC = 125 C 10 10 0 FGPF50N30T Rev. A 20 40 60 80 Gate Resistance, RG [Ω] 0 100 20 40 60 80 100 Gate Resistance, RG [Ω] 4 www.fairchildsemi.com FGPF50N30T 300V, 50A PDP IGBT Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Collector Current Figure 14. Turn-off Characteristics vs. Collector Current 1000 500 Common Emitter VGE = 15V, RG = 15Ω Common Emitter VGE = 15V, RG = 15Ω o o TC = 25 C TC = 25 C o TC = 125 C tr 100 TC = 125 C Switching Time [ns] Switching Time [ns] o td(on) tf td(off) 10 10 20 30 40 100 10 50 20 30 40 50 Collector Current, IC [A] Collector Current, IC [A] Figure 15. Switching Loss vs. Gate Resistance Figure 16. Switching Loss vs.Gate Resistance 2000 3000 Common Emitter VCC = 200V, VGE = 15V o IC = 30A 1000 1000 o o Switching Loss [µJ] Switching Loss [µJ] TC = 25 C Eoff TC = 125 C Eon 100 0 Common Emitter VGE = 15V, RG = 15Ω 20 40 60 80 Gate Resistance, RG [Ω] TC = 25 C Eon 100 30 10 100 Eoff o TC = 125 C 20 30 40 50 Collector Current, IC [A] Figure 17.Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 10 1 0.5 0.2 0.1 0.1 0.05 0.02 PDM 0.01 t1 0.01 t2 single pulse 1E-3 1E-5 1E-4 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 0.01 0.1 1 10 100 Rectangular Pulse Duration [sec] FGPF50N30T Rev. A 5 www.fairchildsemi.com FGPF50N30T 300V, 50A PDP IGBT Mechanical Dimensions 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 0° (3 9.75 ±0.30 MAX1.47 ) #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters FGPF50N30T Rev. A 6 www.fairchildsemi.com The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EZSWITCH™ * FPS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ™ ® tm Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * PDP-SPM™ Power220® POWEREDGE® Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 ® tm SupreMOS™ SyncFET™ ® The Power Franchise® tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I33 FGPF50N30T Rev. A 7 www.fairchildsemi.com FGPF50N30T 300V, 50A PDP IGBT TRADEMARKS