PD - 95633
IRF7420PbF
HEXFET® Power MOSFET
l
l
l
l
l
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Lead-Free
VDSS
RDS(on) max
ID
-12V
14mΩ@VGS = -4.5V
-11.5A
17.5mΩ@VGS = -2.5V
26mΩ@VGS = -1.8V
-9.8A
-8.1A
Description
These P-Channel HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery
and load management applications..
A
D
S
1
8
S
2
7
D
S
3
6
D
G
4
5
D
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
SO-8
Top View
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
-20
-11.5
-9.2
-46
2.5
1.6
20
±8
-55 to +150
V
A
W
mW/°C
V
°C
Thermal Resistance
Parameter
RθJA
www.irf.com
Maximum Junction-to-Ambient
Max.
Units
50
°C/W
1
8/11/04
IRF7420PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-12
–––
–––
-0.4
32
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.007
–––
–––
–––
–––
–––
–––
–––
–––
–––
38
8.1
8.7
8.8
8.8
291
225
3529
1013
656
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
––– V/°C Reference to 25°C, I D = -1mA
14
VGS = -4.5V, ID = -11.5A
17.5 mΩ VGS = -2.5V, ID = -9.8A
26
VGS = -1.8V, ID = -8.1A
-0.9
V
VDS = VGS, ID = -250µA
–––
S
VDS = -10V, ID = -11.5A
-1.0
VDS = -9.6V, VGS = 0V
µA
-25
VDS = -9.6V, VGS = 0V, TJ = 70°C
-100
nA VGS = -8V
100
VGS = 8V
–––
ID = -11.5A
–––
nC
VDS = -6V
–––
VGS = -4.5V
13
V
DD = -6V, VGS = -4.5V
ns
13
ID = -1.0A
437
RD = 6Ω
338
RG = 6Ω
–––
VGS = 0V
–––
pF
VDS = -10V
–––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
-2.5
-46
–––
–––
–––
–––
62
61
-1.2
93
92
A
V
ns
µC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -2.5A, VGS = 0V
TJ = 25°C, IF = -2.5A
di/dt = -100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Surface mounted on 1 in square Cu board, t ≤ 10sec.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
www.irf.com
IRF7420PbF
100
VGS
TOP
-7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
BOTTOM -1.0V
10
1
0.1
-1.0V
VGS
-7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
BOTTOM -1.0V
TOP
-ID, Drain-to-Source Current (A)
-ID, Drain-to-Source Current (A)
100
10
1
-1.0V
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.1
0.01
0.1
1
10
0.1
100
-VDS, Drain-to-Source Voltage (V)
-I D , Drain-to-Source Current (A)
100
TJ = 150 ° C
TJ = 25 ° C
1
V DS = -10V
20µs PULSE WIDTH
0.1
0.5
1.0
1.5
2.0
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
10
100
Fig 2. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 1. Typical Output Characteristics
10
1
-VDS, Drain-to-Source Voltage (V)
2.5
2.0
ID = -11.5A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -4.5V
0
20 40 60 80 100 120 140 160
TJ , Junction Temperature ( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7420PbF
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
5000
C, Capacitance(pF)
4500
4000
Ciss
3500
Coss = Cds + Cgd
3000
2500
2000
Coss
1500
Crss
1000
500
6
-VGS , Gate-to-Source Voltage (V)
5500
4
3
2
1
0
10
100
0
10
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
30
40
50
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
-IID , Drain Current (A)
-ISD , Reverse Drain Current (A)
20
QG , Total Gate Charge (nC)
-VDS, Drain-to-Source Voltage (V)
100
10
TJ = 150 ° C
TJ = 25 ° C
1
0.1
0.2
0.4
0.6
0.8
1.0
Fig 7. Typical Source-Drain Diode
Forward Voltage
100us
1ms
10
10ms
TC = 25 °C
TJ = 150 °C
Single Pulse
V GS = 0 V
-VSD ,Source-to-Drain Voltage (V)
4
V DS=-9.6V
V DS=-6V
5
0
1
ID = -11.5A
1.2
1
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
www.irf.com
IRF7420PbF
12
VDS
-ID , Drain Current (A)
VGS
9
RD
D.U.T.
RG
-
+
VDD
VGS
6
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
3
td(on)
tr
t d(off)
tf
VGS
0
25
50
75
100
125
TC , Case Temperature ( °C)
150
10%
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Fig 10b. Switching Time Waveforms
Thermal Response(Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
PDM
0.02
1
t1
0.01
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
IRF7420PbF
0.020
0.015
ID = -11.5A
0.010
0.005
0.0
2.0
4.0
6.0
-VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs.
Gate Voltage
8.0
RDS ( on ) , Drain-to-Source On Resistance Ω
( )
(
RDS(on), Drain-to -Source On ResistanceΩ)
0.025
0.08
0.06
VGS = -1.8V
0.04
VGS = -2.5V
0.02
VGS = -4.5V
0
0.0
10.0
20.0
30.0
40.0
50.0
-ID , Drain Current ( A )
Fig 13. Typical On-Resistance Vs.
Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
QG
QGS
.2µF
.3µF
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 14a. Basic Gate Charge Waveform
6
12V
IG
ID
Current Sampling Resistors
Fig 14b. Gate Charge Test Circuit
www.irf.com
1.0
400
0.9
350
0.8
300
0.7
Power (W)
-VGS(th) ( V )
IRF7420PbF
ID = -250µA
0.6
250
200
0.5
150
0.4
100
0.3
50
0
0.2
-75
-50
-25
0
25
50
75
100
TJ , Temperature ( °C )
Fig 15. Typical Vgs(th) Vs.
Junction Temperature
www.irf.com
125
150
0.0001
0.0010
0.0100 0.1000
1.0000 10.0000 100.0000
Time (sec)
Fig 16. Typical Power Vs. Time
7
IRF7420PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
D
DIM
B
5
A
8
6
7
6
H
E
1
6X
2
3
0.25 [.010]
4
A
e
e1
8X b
0.25 [.010]
A
MILLIMET ERS
MAX
MIN
.0532
.0688
1.35
1.75
A1 .0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
e1
.025 BASIC
0.635 BAS IC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
A
5
INCHES
MIN
MAX
K x 45°
C
y
0.10 [.004]
A1
8X L
8X c
7
C A B
FOOT PRINT
NOT ES :
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS.
MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS.
MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O
A SUBS T RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
EXAMPLE: T HIS IS AN IRF7101 (MOSFET )
INT ERNAT IONAL
RECT IFIER
LOGO
XXXX
F 7101
DAT E CODE (YWW)
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF T HE YEAR
WW = WEEK
A = AS SEMBLY S IT E CODE
LOT CODE
PART NUMBER
8
www.irf.com
IRF7420PbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/04
www.irf.com
9