Foshan BC856 Silicon pnp transistor in a sot-23 plastic package Datasheet

BC856
Rev.F Apr.-2017
描述
/
DATA SHEET
Descriptions
SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package.
特征
/ Features
低电流,低电压,小封装。
Low current ,Low voltage ,S-mini package.
用途
/
Applications
用于一般放大
General power amplifier application.
内部等效电路
引脚排列
/ Equivalent Circuit
/ Pinning
3
1
2
PIN1:Base
放大及印章代码
PIN 2:Emitter
PIN 3:Collector
/ hFE Classifications & Marking
hFE Classifications
Symbol
hFE Range
Marking
http://www.fsbrec.com
A
B
125~250
220~475
H3A
H3B
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BC856
Rev.F Apr.-2017
极限参数
/
DATA SHEET
Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
Collector to Base Voltage
VCBO
-80
V
Collector to Emitter Voltage
VCEO
-65
V
Emitter to Base Voltage
VEBO
-5.0
V
Collector Current - Continuous
IC
-100
mA
Collector Power Dissipation
PC
350
mW
Junction Temperature
Tj
150
℃
Tstg
-55~150
℃
Storage Temperature Range
电性能参数
/ Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector Cut-Off Current
符号
Symbol
ICBO
测试条件
Test Conditions
VCB=-30 V IE=0
最小值
Min
典型值
Typ
最大值 单位
Max
Unit
-0.015 μA
VCE=-5.0V
IC=-2.0mA
VCE(sat)(1) IC=-10mA
IB=-0.5mA
-0.09
-0.3
V
VCE(sat)(2) IC=-100mA
IB=-5.0mA
-0.25
-0.65
V
Base to Emitter Saturation
Voltage
VBE(sat)(1)
IC=-10mA
IB=-0.5mA
-0.7
V
VBE(sat)(2)
IC=-100mA
IB=-5.0mA
-0.9
V
Base to Emitter Voltage
VBE(ON)1
VCE=-5.0V
IC=-2.0mA
Base to Emitter Voltage
VBE(ON)2
VCE=-5.0V
IC=-10mA
VCE=-5.0V
f=100MHz
VCB=-10V
f=1.0MHz
VCE=-6.0V
Rg=2KΩ
IC=10mA
DC Current Gain
Collector to Emitter Saturation
Voltage
Transition Frequency
hFE
fT
Collector Output Capacitance
Cob
Noise Figure
NF
http://www.fsbrec.com
IE=0
IC=-0.1mA
f=1.0KHz
125
-0.6
475
-0.65
-0.75
V
-0.82
V
150
MHz
4.5
pF
2.0
10
dB
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BC856
Rev.F Apr.-2017
电参数曲线图
DATA SHEET
/ Electrical Characteristic Curve
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BC856
Rev.F Apr.-2017
外形尺寸图
DATA SHEET
/ Package Dimensions
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BC856
Rev.F Apr.-2017
印章说明
/
DATA SHEET
Marking Instructions
H3A
说明:
H: 
为公司代码
3A:
为型号代码
Note:
H:
Company Code.
3A:
Product Type Code
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BC856
Rev.F Apr.-2017
DATA SHEET
回流焊温度曲线图(无铅)
/
Temperature Profile for IR Reflow Soldering(Pb-Free)
说明:
Note:
1、预热温度 25~150℃,时间 60~90sec;
1.Preheating:25~150℃, Time:60~90sec.
2、峰值温度 245±5℃,时间持续为 5±0.5sec;
2.Peak Temp.:245±5℃, Duration:5±0.5sec.
3、焊接制程冷却速度为 2~10℃/sec.
3. Cooling Speed: 2~10℃/sec.
耐焊接热试验条件
/
Resistance to Soldering Heat Test Conditions
温度:260±5℃
包装规格
Time:10±1 sec
/ REEL
Package Type
封装形式
使用说明
Temp.:260±5℃
/ Packaging SPEC.
卷盘包装
SOT-23
时间:10±1 sec.
Units 包装数量
Dimension
Units/Reel
只/卷盘
Reels/Inner Box
卷盘/盒
Units/Inner Box
只/盒
Inner Boxes/Outer Box
盒/箱
Units/Outer Box
只/箱
3,000
10
30,000
6
180,000
包装尺寸
3
(unit:mm )
Reel
Inner Box 盒
Outer Box 箱
7〞×8
180×120×180
390×385×205
/ Notices
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