MRF314A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRF314A is Designed for Class C Power Amplifier Applications up to 200 MHz. PACKAGE STYLE .380 4L STUD .112x45° FEATURES: • PG = 10 dB min. at 30 W/ 150 MHz • Withstands 30:1 Load VSWR • Omnigold™ Metalization System C B E ØC E B D MAXIMUM RATINGS H I J G #8-32 UNC-2A 4.0 A IC A F E VCBO 65 V VCEO 35 V VEBO 4.0 V PDISS O 60 W @ TC = 25 C O O O O -65 C to +200 C TJ TSTG -65 C to +150 C θJC O inches / mm inches / mm A .230 / 5.84 B .980 / 24.89 C .370 / 9.40 .385 / 9.78 D .004 / 0.10 .007 / 0.18 E .320 / 8.13 .330 / 8.38 F .100 / 2.54 .130 / 3.30 G .450 / 11.43 .490 / 12.45 H .090 / 2.29 .100 / 2.54 I .155 / 3.94 .175 / 4.45 .750 / 19.05 ORDER CODE: ASI10770 O TC = 25 C NONETEST CONDITIONS SYMBOL MINIMUM .220 / 5.59 J 2.9 C/W CHARACTERISTICS MAXIMUM DIM MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 200 mA 35 V BVCES IC = 200 mA 65 V BVEBO IE = 10 mA 4.0 V ICBO VE = 28 V hFE VCE = 5.0 V COB VCB = 28 V PG ηC ψ VCC = 28 V IC = 200 mA 5 f = 1.0 MHz POUT = 30 W f = 150 MHz 10 50 13.5 60 2.0 mA --- --- 50 pF dB % 30:1 minimum without degration in output power A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1