NST45011MW6T1G, NSVT45011MW6T3G Dual Matched General Purpose Transistor NPN Matched Pair http://onsemi.com These transistors are housed in an ultra−small SOT−363 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need for costly trimming. Applications are Current Mirrors; Differential, Sense and Balanced Amplifiers; Mixers; Detectors and Limiters. SOT−363 CASE 419B STYLE 1 Features • • • • • Current Gain Matching to 10% Base−Emitter Voltage Matched to 2 mV Drop−In Replacement for Standard Device NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* Symbol Value Unit Collector −Emitter Voltage Rating VCEO 45 V Collector −Base Voltage VCBO 50 V Emitter −Base Voltage VEBO 6.0 V IC 100 mAdc Collector Current − Continuous Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic (2) (1) Q1 Q2 (4) (5) (6) MARKING DIAGRAMS MAXIMUM RATINGS Total Device Dissipation Per Device FR−5 Board (Note 1) TA = 25°C Derate Above 25°C (3) 2F MG G 2F M G = Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Symbol Max Unit PD 380 250 mW 3.0 mW/°C Thermal Resistance, Junction to Ambient RqJA 328 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Package Shipping† NST45011MW6T1G SOT−363 (Pb−Free) 3,000 / Tape & Reel NSVT45011MW6T3G SOT−363 (Pb−Free) 10,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1. FR−5 = 1.0 x 0.75 x 0.062 in *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 February, 2013 − Rev. 4 1 Publication Order Number: NST45011MW6/D NST45011MW6T1G, NSVT45011MW6T3G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage, (IC = 10 mA) V(BR)CEO 45 − − V Collector −Emitter Breakdown Voltage, (IC = 10 mA, VEB = 0) V(BR)CES 50 − − V Collector −Base Breakdown Voltage, (IC = 10 mA) V(BR)CBO 50 − − V Emitter −Base Breakdown Voltage, (IE = 1.0 mA) V(BR)EBO 6.0 − − V − − − − 15 5.0 nA mA 150 200 0.9 − 300 1.0 − 500 1.1 − − − − 250 600 700 850 750 890 800 950 VBE(1) − VBE(2) 580 − − 660 − 1.0 700 770 2.0 OFF CHARACTERISTICS Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) ICBO ON CHARACTERISTICS hFE DC Current Gain (IC = 10 mA, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) (Note 2) hFE(1)/hFE(2) Collector −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) VCE(sat) Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) VBE(sat) Base −Emitter On Voltage (IC = 2.0 mA, VCE = 5.0 V) (IC = 10 mA, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) (Note 3) VBE(on) − mV mV mV SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product, (IC = 10 mA, VCE = 5 Vdc, f = 100 MHz) fT 100 − − MHz Output Capacitance, (VCB = 10 V, f = 1.0 MHz) Cob − − 4.5 pF Noise Figure, (IC = 0.2 mA, VCE = 5 Vdc, RS = 2 kW, f = 1 kHz, BW = 200Hz) NF − − 10 dB Noise Figure, (IC = 0.1 mA, VCE = 10 Vdc, RS = 1 kW, f = 1 kHz, BW = 200Hz) NF − 1.0 − dB 2. hFE(1)/hFE(2) is the ratio of one transistor compared to the other transistor within the same package. The smaller hFE is used as numerator. 3. VBE(1) − VBE(2) is the absolute difference of one transistor compared to the other transistor within the same package. http://onsemi.com 2 NST45011MW6T1G, NSVT45011MW6T3G TYPICAL CHARACTERISTICS 1.0 VCE = 10 V TA = 25°C 1.5 TA = 25°C 0.9 0.8 V, VOLTAGE (VOLTS) hFE , NORMALIZED DC CURRENT GAIN 2.0 1.0 0.8 0.6 0.4 VBE(sat) @ IC/IB = 10 0.7 VBE(on) @ VCE = 10 V 0.6 0.5 0.4 0.3 0.2 0.3 VCE(sat) @ IC/IB = 10 0.1 0.2 0.2 0.5 50 1.0 20 2.0 5.0 10 IC, COLLECTOR CURRENT (mAdc) 100 0 0.1 200 Figure 1. Normalized DC Current Gain 1.0 θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (V) TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA IC = 50 mA IC = 100 mA 0.8 0.4 0.02 10 0.1 1.0 IB, BASE CURRENT (mA) 20 -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) C, CAPACITANCE (pF) TA = 25°C 5.0 Cib 3.0 Cob 2.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 100 Figure 4. Base−Emitter Temperature Coefficient 10 7.0 10 1.0 IC, COLLECTOR CURRENT (mA) 0.2 Figure 3. Collector Saturation Region 1.0 50 70 100 Figure 2. “Saturation” and “On” Voltages 2.0 0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 40 400 300 200 VCE = 10 V TA = 25°C 100 80 60 40 30 20 0.5 0.7 Figure 5. Capacitances 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 Figure 6. Current−Gain − Bandwidth Product http://onsemi.com 3 50 NST45011MW6T1G, NSVT45011MW6T3G TYPICAL CHARACTERISTICS The safe operating area curves indicate IC−VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 7 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. 200 IC, COLLECTOR CURRENT (mA) 1s 3 ms 100 50 TA = 25°C TJ = 25°C 10 5.0 2.0 1.0 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 5.0 10 30 45 VCE, COLLECTOR-EMITTER VOLTAGE (V) 65 100 Figure 7. Active Region Safe Operating Area http://onsemi.com 4 NST45011MW6T1G, NSVT45011MW6T3G PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE W D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. e 6 5 4 HE DIM A A1 A3 b C D E e L HE −E− 1 2 3 b 6 PL 0.2 (0.008) M E M A3 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 STYLE 1: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 C A A1 MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 L SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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