ON BAT54CXV3D Dual series schottky barrier diode Datasheet

BAT54CXV3T1G
Dual Series Schottky
Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
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30 VOLT
DUAL COMMON CATHODE
SCHOTTKY BARRIER
DIODES
Features
• Extremely Fast Switching Speed
• Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mAdc
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
ANODE
3
CATHODE
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
30
V
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
PF
240
1.9
mW
mW/°C
Forward Current (DC)
IF
200 Max
mA
Non−Repetitive Peak Forward
Current, tp < 10 msec
IFSM
600
mA
Repetitive Peak Forward Current
Pulse Wave = 1 sec, Duty Cycle =
66%
IFRM
300
mA
TJ
−55 to 125
°C
Storage Temperature Range
Tstg
−55 to +150
°C
Thermal Resistance,
Junction−to−Ambient (Note 1)
RJA
525
°C/W
Junction Temperature
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 board with minimum mounting pad.
© Semiconductor Components Industries, LLC, 2010
August, 2010 − Rev. 2
2
ANODE
1
MARKING
DIAGRAM
3
1
2
SC−89
CASE 463C
STYLE 3
5CM G
G
1
5C
= Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
BAT54CXV3T1G
Package
Shipping†
SC−89
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
BAT54CXV3/D
BAT54CXV3T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Symbol
Min
Typ
Max
Unit
V(BR)R
30
−
−
V
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
CT
−
7.6
10
pF
Reverse Leakage
(VR = 25 V)
IR
−
0.5
2.0
Adc
Forward Voltage
(IF = 0.1 mAdc)
VF
−
0.22
0.24
Vdc
Forward Voltage
(IF = 30 mAdc)
VF
−
0.41
0.5
Vdc
Forward Voltage
(IF = 100 mAdc)
VF
−
0.52
0.8
Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1)
trr
−
−
5.0
ns
Forward Voltage
(IF = 1.0 mAdc)
VF
−
0.29
0.32
Vdc
Forward Voltage
(IF = 10 mAdc)
VF
−
0.35
0.40
Vdc
trr
T
Characteristic
Reverse Breakdown Voltage
(IR = 10 A)
820 +10 V
2k
100 H
0.1 F
tr
IF
0.1 F
tp
T
IF
10%
DUT
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
90%
VR
IR
INPUT SIGNAL
iR(REC) = 1 mA
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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2
BAT54CXV3T1G
100
IF, FORWARD CURRENT (mA)
1 25°C
85°C
10
1 50°C
1.0
25°C
0.1
0.0
−40°C
−55°C
0.2
0.3
0.4
0.1
0.5
VF, FORWARD VOLTAGE (VOLTS)
0.6
Figure 2. Forward Voltage
IR, REVERSE CURRENT (A)
1000
TA = 150°C
100
TA = 125°C
10
1.0
TA = 85°C
0.1
0.01
0.001
TA = 25°C
0
5
15
25
10
20
VR, REVERSE VOLTAGE (VOLTS)
30
Figure 3. Leakage Current
CT, TOTAL CAPACITANCE (pF)
14
12
10
8
6
4
2
0
0
5
10
15
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Total Capacitance
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3
25
30
BAT54CXV3T1G
PACKAGE DIMENSIONS
SC−89, 3−LEAD
CASE 463C−03
ISSUE C
A
−X−
3
1
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4. 463C−01 OBSOLETE, NEW STANDARD 463C−02.
B −Y− S
K
G
2 PL
D
0.08 (0.003)
M
C
M
DIM
A
B
C
D
G
H
J
K
L
M
N
S
3 PL
X Y
J
N
−T−
MILLIMETERS
MIN
NOM MAX
1.50
1.60
1.70
0.75
0.85
0.95
0.60
0.70
0.80
0.23
0.28
0.33
0.50 BSC
0.53 REF
0.10
0.15
0.20
0.30
0.40
0.50
1.10 REF
−−−
−−−
10 _
−−−
−−−
10 _
1.50
1.60
1.70
INCHES
NOM MAX
0.063 0.067
0.034 0.040
0.028 0.031
0.011 0.013
0.020 BSC
0.021 REF
0.004 0.006 0.008
0.012 0.016 0.020
0.043 REF
−−−
−−−
10 _
−−−
−−−
10 _
0.059 0.063 0.067
MIN
0.059
0.030
0.024
0.009
STYLE 3:
PIN 1. ANODE
2. ANODE
3. CATHODE
SEATING
PLANE
SOLDERING FOOTPRINT*
0.53
0.020
1.10
0.043
0.53
0.020
0.50
0.020
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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BAT54CXV3/D
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