Preliminary GS881E18/36T-11/11.5/100/80/66 100-Pin TQFP Commercial Temp Industrial Temp MHz 512K x 18, 256K x 36 ByteSafe™ 100 MHz–66 3.3 V VDD 8Mb Sync Burst SRAMs 3.3 V and 2.5 V I/O 1.10 9/2000Features counter may be configured to count in either linear or interleave order with the Linear Burst Order (LBO) input. The Burst function need not be used. New addresses can be loaded on every cycle with no degradation of chip performance. • FT pin for user-configurable flow through or pipelined operation • Dual Cycle Deselect (DCD) operation • IEEE 1149.1 JTAG-compatible Boundary Scan • On-chip write parity checking; even or odd selectable • 3.3 V +10%/–5% core power supply • 2.5 V or 3.3 V I/O supply • LBO pin for Linear or Interleaved Burst mode • Internal input resistors on mode pins allow floating mode pins • Default to Interleaved Pipeline mode • Byte Write (BW) and/or Global Write (GW) operation • Common data inputs and data outputs • Clock Control, registered, address, data, and control • Internal self-timed write cycle • Automatic power-down for portable applications • 100-lead TQFP package Flow Through/Pipeline Reads The function of the Data Output register can be controlled by the user via the FT mode pin (Pin 14). Holding the FT mode pin low places the RAM in Flow Through mode, causing output data to bypass the Data Output Register. Holding FT high places the RAM in Pipeline mode, activating the risingedge-triggered Data Output Register. DCD Pipelined Reads The GS881E18//36T is a DCD (Dual Cycle Deselect) pipelined synchronous SRAM. SCD (Single Cycle Deselect) versions are also available. DCD SRAMs pipeline disable commands to the same degree as read commands. DCD RAMs hold the deselect command for one full cycle and then begin turning off their outputs just after the second rising edge of clock. -11 -11.5 -100 -80 -66 10 ns 10 ns 12.5 ns 15 ns Pipeline tCycle 10 ns 4.0 ns 4.0 ns 4.0 ns 4.5 ns 5.0 ns 3-1-1-1 tKQ 225 mA 225 mA 225 mA 200 mA 185 mA IDD Byte Write and Global Write Byte write operation is performed by using Byte Write enable (BW) input combined with one or more individual byte write signals (Bx). In addition, Global Write (GW) is available for writing all bytes at one time, regardless of the byte write control inputs. 11 ns 11.5 ns 12 ns 14 ns 18 ns Flow tKQ 15 ns 15 ns 15 ns 20 ns Through tCycle 15 ns 2-1-1-1 IDD 180 mA 180 mA 180 mA 175 mA 165 mA ByteSafe™ Parity Functions Functional Description The GS881E18/36T features ByteSafe data security functions. See detailed discussion following. Applications Sleep Mode The GS881E18//36T is a 9,437,184-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support. Low power (Sleep mode) is attained through the assertion (high) of the ZZ signal, or by stopping the clock (CK). Memory data is retained during Sleep mode. Core and Interface Voltages The GS881E18//36T operates on a 3.3 V power supply, and all inputs/outputs are 3.3 V- and 2.5 V-compatible. Separate output power (VDDQ) pins are used to decouple output noise from the internal circuit. Controls Addresses, data I/Os, chip enables (E1, E2), address burst control inputs (ADSP, ADSC, ADV) and write control inputs (Bx, BW, GW) are synchronous and are controlled by a positive-edge-triggered clock input (CK). Output enable (G) and power down control (ZZ) are asynchronous inputs. Burst cycles can be initiated with either ADSP or ADSC inputs. In Burst mode, subsequent burst addresses are generated internally and are controlled by ADV. The burst address Rev: 1.10 9/2000 1/34 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2000, Giga Semiconductor, Inc. Preliminary GS881E18/36T-11/11.5/100/80/66 Rev: 1.10 9/2000 2/34 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. A18 NC NC VDDQ VSS NC DQA9 DQA8 DQA7 VSS VDDQ DQA6 DQA5 VSS QE VDD ZZ DQA4 DQA3 VDDQ VSS DQA2 DQA1 NC NC VSS VDDQ NC NC NC A16 LBO A5 A4 VSS NC NC DQB1 DQB2 VSS VDDQ DQB3 DQB4 FT VDD DP VSS DQB5 DQB6 VDDQ VSS DQB7 DQB8 DQB9 NC VSS VDDQ NC NC NC A1 A0 TMS TDI VSS VDD TDO TCK A10 A11 A12 A13 A14 A15 VDDQ 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 1 80 2 79 3 78 4 77 5 76 6 75 7 74 8 73 9 72 512K X 18 10 71 Top View 11 70 12 69 13 68 14 67 15 66 16 65 17 64 18 63 19 62 20 61 21 60 22 59 23 58 24 57 25 56 26 55 27 54 28 53 29 52 30 51 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 A3 A2 NC NC NC CK GW BW G ADSC ADSP ADV A8 A9 A6 A7 E1 E2 NC NC BB BA A17 VDD VSS GS881E18 100-Pin TQFP Pinout © 2000, Giga Semiconductor, Inc. Preliminary GS881E18/36T-11/11.5/100/80/66 Rev: 1.10 9/2000 3/34 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. DQB9 DQB8 DQB7 VDDQ VSS DQB6 DQB5 DQB4 DQB3 VSS VDDQ DQB2 DQB1 VSS QE VDD ZZ DQA1 DQA2 VDDQ VSS DQA3 DQA4 DQA5 DQA6 VSS VDDQ DQA7 DQA8 DQA9 A16 LBO A5 A4 VSS DQ C6 DQ C5 DQ C4 DQ C3 VSS VDDQ DQ C2 DQ C1 FT VDD DP VSS DQ D1 DQ D2 VDDQ VSS DQ D3 DQ D4 DQ D5 DQ D6 VSS VDDQ DQ D7 DQ D8 DQ D9 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 1 80 2 79 3 78 4 77 5 76 6 75 7 74 8 73 9 72 256K x 36 10 71 Top View 11 70 12 69 13 68 14 67 15 66 16 65 17 64 18 63 19 62 20 61 21 60 22 59 23 58 24 57 25 56 26 55 27 54 28 53 29 52 30 51 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 A3 A2 A1 A0 TMS TDI VSS VDD TDO TCK A10 A11 A12 A13 A14 A15 DQ C9 DQ C8 DQ C7 VDDQ CK GW BW G ADSC ADSP ADV A8 A9 A6 A7 E1 E2 BD BC BB BA A17 VDD VSS GS881E36 100-Pin TQFP Pinout © 2000, Giga Semiconductor, Inc. Preliminary GS881E18/36T-11/11.5/100/80/66 TQFP Pin Descriptio Pin Location Symbol Typ e Description 37, 36 A0, A1 I Address field LSBs and Address Counter preset Inputs 35, 34, 33, 32, 100, 99, 82, 81, 44, 45, 46, 47, 48, 49, 50, 92 A2–A17 I Address Inputs 80 A18 I Address Inputs 63, 62, 59, 58, 57, 56, 53, 52 68, 69, 72, 73, 74, 75, 78, 79 13, 12, 9, 8, 7, 6, 3, 2 18, 19, 22, 23, 24, 25, 28, 29 DQA1–DQ A8 DQB1–DQ B8 DQC1–DQ C8 DQD1–DQ D8 I/O Data Input and Output pins ( x36 Version) 51, 80, 1, 30 DQA9, DQB9, DQC9, DQ D9 I/O Data Input and Output pins 58, 59, 62, 63, 68, 69, 72, 73, 74 8, 9, 12, 13, 18, 19, 22, 23, 24 DQA1–DQ A9 DQB1–DQ B9 I/O Data Input and Output pins 51, 52, 53, 56, 57 75, 78, 79, 1, 2, 3, 6, 7 25, 28, 29, 30 NC — No Connect 16 DP I Parity Input; 1 = Even, 0 = Odd 66 QE O Parity Error Out; Open Drain Output 87 BW I Byte Write—Writes all enabled bytes; active low 93, 94 BA, BB I Byte Write Enable for DQA, DQB Data I/Os; active low 95, 96 BC, BD I Byte Write Enable for DQC, DQD Data I/Os; active low ( x36 Version) 95, 96 NC — No Connect (x18 Version) 89 CK I Clock Input Signal; active high 88 GW I Global Write Enable—Writes all bytes; active low 98 E1 I Chip Enable; active low 97 E2 I Chip Enable; active high 86 G I Output Enable; active low 83 ADV I Burst address counter advance enable; active low 84, 85 ADSP, ADSC I Address Strobe (Processor, Cache Controller); active low Rev: 1.10 9/2000 4/34 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2000, Giga Semiconductor, Inc. Preliminary GS881E18/36T-11/11.5/100/80/66 Pin Location Symbol Typ e Description 64 ZZ I Sleep mode control; active high 14 FT I Flow Through or Pipeline mode; active low 31 LBO I Linear Burst Order mode; active low 38 TMS I Scan Test Mode Select 39 TDI I Scan Test Data In 42 TDO O Scan Test Data Out 43 TCK I Scan Test Clock 15, 41, 65, 91 VDD I Core power supply 5,10,17, 21, 26, 40, 55, 60, 67, 71, 76, 90 VSS I I/O and Core Ground 4, 11, 20, 27, 54, 61, 70, 77 VDDQ I Output driver power supply Rev: 1.10 9/2000 5/34 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2000, Giga Semiconductor, Inc. Preliminary GS881E18/36T-11/11.5/100/80/66 GS881E18/36 Block Diagram Register A0–An D Q A0 A0 D0 Q0 A1 A1 D1 Q1 Counter Load A LBO ADV Memory Array CK ADSC ADSP Q D Register GW BW BA D Q 36 36 Register D Q BB 4 4 Register D Q Q Register D D Q Q D D Register Register Q Register BC BD Register D 36 Q 36 36 Register E1 E2 D Q 4 32 36 Parity Encode Register D Q 4 Parity Compare FT G ZZ 36 Power Down 0 DQx0–DQx9 QE DP Control Note: Only x36 version shown for simplicity. Rev: 1.10 9/2000 6/34 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2000, Giga Semiconductor, Inc. Preliminary GS881E18/36T-11/11.5/100/80/66 ByteSafe™ Parity Functions This SRAM includes a write data parity check that checks the validity of data coming into the RAM on write cycles. In Flow Through mode, write data errors are reported in the cycle following the data input cycle. In Pipeline mode, write data errors are reported one clock cycle later. (See Write Parity Error Output Timing Diagram.) The Data Parity Mode (DP) pin must be tied high to set the RAM to check for even parity or low to check for odd parity. Read data parity is not checked by the RAM as data. Validity is best established at the data’s destination. The Parity Error Output is an open drain output and drives low to indicate a parity error. Multiple Parity Error Output pins may share a common pull-up resistor. Write Parity Error Output Timing Diagram Pipelined Mode Flow Through Mode CK DQ D In A D In B D In C tKQ tLZ QE DQ D In D tHZ tKQX Err A D In A D In E Err C D In B D In C tKQ tLZ QE D In D D In E tHZ tKQX Err A Err C BPR 1999.05.18 Rev: 1.10 9/2000 7/34 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2000, Giga Semiconductor, Inc. Preliminary GS881E18/36T-11/11.5/100/80/66 Mode Pin Functions Mode Name Pin Name Burst Order Control LBO Output Register Control FT Power Down Control ZZ ByteSafe Data Parity Control DP State Function L Linear Burst H or NC Interleaved Burst L Flow Through H or NC Pipeline L or NC Active H Standby, IDD = ISB L Check for Odd Parity H or NC Check for Even Parity Note: There are pull-up devices on the LBO, DP and FT pins and a pull down device on the ZZ pin, so those input pins can be unconnected and the chip will operate in the default states as specified in the above table. Burst Counter Sequences Interleaved Burst Sequence Linear Burst Sequence A[1:0] A[1:0] A[1:0] A[1:0] A[1:0] A[1:0] A[1:0] A[1:0] 1st address 00 01 10 11 1st address 00 01 10 11 2nd address 01 10 11 00 2nd address 01 00 11 10 3rd address 10 11 00 01 3rd address 10 11 00 01 4th address 11 00 01 10 4th address 11 10 01 00 Note: The burst counter wraps to initial state on the 5th clock. Note: The burst counter wraps to initial state on the 5th clock. BPR 1999.05.18 Rev: 1.10 9/2000 8/34 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2000, Giga Semiconductor, Inc. Preliminary GS881E18/36T-11/11.5/100/80/66 Byte Write Truth Table Function GW BW BA BB BC BD Notes Read H H X X X X 1 Read H L H H H H 1 Write byte a H L L H H H 2, 3 Write byte b H L H L H H 2, 3 Write byte c H L H H L H 2, 3, 4 Write byte d H L H H H L 2, 3, 4 Write all bytes H L L L L L 2, 3, 4 Write all bytes L X X X X X Notes: 1. All byte outputs are active in read cycles regardless of the state of Byte Write Enable inputs. 2. Byte Write Enable inputs BA, BB, BC, and/or BD may be used in any combination with BW to write single or multiple bytes. 3. All byte I/Os remain High-Z during all write operations regardless of the state of Byte Write Enable inputs. 4. Bytes “C” and “D” are only available on the x36 version. Rev: 1.10 9/2000 9/34 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2000, Giga Semiconductor, Inc. Preliminary GS881E18/36T-11/11.5/100/80/66 Synchronous Truth Table Operation Address Used State Diagram Key5 E1 Deselect Cycle, Power Down None X H X X Deselect Cycle, Power Down None X L F Deselect Cycle, Power Down None X L Read Cycle, Begin Burst External R Read Cycle, Begin Burst External Write Cycle, Begin Burst E22 ADV W3 DQ4 L X X High-Z L X X X High-Z F H L X X High-Z L T L X X X Q R L T H L X F Q External W L T H L X T D Read Cycle, Continue Burst Next CR X X H H L F Q Read Cycle, Continue Burst Next CR H X X H L F Q Write Cycle, Continue Burst Next CW X X H H L T D Write Cycle, Continue Burst Next CW H X X H L T D Read Cycle, Suspend Burst Current X X H H H F Q Read Cycle, Suspend Burst Current H X X H H F Q Write Cycle, Suspend Burst Current X X H H H T D Write Cycle, Suspend Burst Current H X X H H T D (x36only) ADSP ADSC Notes: 1. X = Don’t Care, H = High, L = Low. 2. For x36 Version, E = T (True) if E2 = 1; E = F (False) if E2 = 0. 3. W = T (True) and F (False) is defined in the Byte Write Truth Table preceding. 4. G is an asynchronous input. G can be driven high at any time to disable active output drivers. G low can only enable active drivers (shown as “Q” in the Truth Table above). 5. 6. 7. All input combinations shown above are tested and supported. Input combinations shown in gray boxes need not be used to accomplish basic synchronous or synchronous burst operations and may be avoided for simplicity. Tying ADSP high and ADSC low allows simple non-burst synchronous operations. See BOLD items above. Tying ADSP high and ADV low while using ADSC to load new addresses allows simple burst operations. See ITALIC items above. Rev: 1.10 9/2000 10/34 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2000, Giga Semiconductor, Inc. Preliminary GS881E18/36T-11/11.5/100/80/66 Simplified State Diagram X Deselect W R Simple Burst Synchronous Operation Simple Synchronous Operation W X R R First Write CW First Read CR W X CR R R X Burst Write Burst Read X CR CW CR Notes: 1. The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low. 2. The upper portion of the diagram assumes active use of only the Enable (E1 and E2) and Write (BA, BB, BC, BD, BW, and GW) control inputs, and that ADSP is tied high and ADSC is tied low. 3. The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs, and assumes ADSP is tied high and ADV is tied low. Rev: 1.10 9/2000 11/34 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2000, Giga Semiconductor, Inc. Preliminary GS881E18/36T-11/11.5/100/80/66 Simplified State Diagram with G X Deselect W R W X R R First Write CR CW W CW W X First Read X CR R Burst Write R CR CW W Burst Read X CW CR Notes: 1. The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G. 2. Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from Read cycles to Write cycles without passing through a Deselect cycle. Dummy Read cycles increment the address counter just like normal Read cycles. 3. Transitions shown in grey tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet Data Input Set Up Time. Rev: 1.10 9/2000 12/34 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2000, Giga Semiconductor, Inc. Preliminary GS881E18/36T-11/11.5/100/80/66 Absolute Maximum Ratings (All voltages reference to VSS) Symbol Description Value Unit VDD Voltage on VDD Pins –0.5 to 4.6 V VDDQ Voltage in VDDQ Pins –0.5 to VDD V VCK Voltage on Clock Input Pin –0.5 to 6 V VI/O Voltage on I/O Pins –0.5 to VDDQ +0.5 (≤ 4.6 V max.) V VIN Voltage on Other Input Pins –0.5 to VDD +0.5 (≤ 4.6 V max.) V IIN Input Current on Any Pin +/–20 mA IOUT Output Current on Any I/O Pin +/–20 mA PD Package Power Dissipation 1.5 W TSTG Storage Temperature –55 to 125 oC TBIAS Temperature Under Bias –55 to 125 oC Note: Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of this component. Recommended Operating Conditions Parameter Symbol Min. Typ. Max. Unit Notes Supply Voltage VDD 3.135 3.3 3.6 V I/O Supply Voltage VDDQ 2.375 2.5 VDD V 1 Input High Voltage VIH 1.7 — VDD +0.3 V 2 Input Low Voltage VIL –0.3 — 0.8 V 2 Ambient Temperature (Commercial Range Versions) TA 0 25 70 °C 3 Ambient Temperature (Industrial Range Versions) TA –40 25 85 °C 3 Notes: 1. Unless otherwise noted, all performance specifications quoted are evaluated for worst case at both 2.75 V ≤ VDDQ ≤ 2.375 V (i.e., 2.5 V I/O) and 3.6 V ≤ VDDQ ≤ 3.135 V (i.e., 3.3 V I/O), and quoted at whichever condition is worst case. 2. This device features input buffers compatible with both 3.3 V and 2.5 V I/O drivers. 3. Most speed grades and configurations of this device are offered in both Commercial and Industrial Temperature ranges. The part number of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are evaluated for worst case in the temperature range marked on the device. 4. Input Under/overshoot voltage must be –2 V > Vi < VDD +2 V with a pulse width not to exceed 20% tKC. Rev: 1.10 9/2000 13/34 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2000, Giga Semiconductor, Inc. Preliminary GS881E18/36T-11/11.5/100/80/66 Undershoot Measurement and Timing Overshoot Measurement and Timing VIH 20% tKC VDD + 2.0 V VSS 50% 50% VDD VSS – 2.0 V 20% tKC VIL Capacitance (TA = 25oC, f = 1 MHZ, VDD = 3.3 V) Parameter Symbol Test conditions Typ. Max. Unit Input Capacitance CIN VIN = 0 V 4 5 pF Input/Output Capacitance CI/O VOUT = 0 V 6 7 pF Note: These parameters are sample tested. Package Thermal Characteristics Rating Layer Board Symbol Max Unit Notes Junction to Ambient (at 200 lfm) single RΘJA 40 °C/W 1,2 Junction to Ambient (at 200 lfm) four RΘJA 24 °C/W 1,2 Junction to Case (TOP) — RΘJC 9 °C/W 3 Notes: 1. Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature, ambient. Temperature air flow, board density, and PCB thermal resistance. 2. SCMI G-38-87 3. Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1 Rev: 1.10 9/2000 14/34 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2000, Giga Semiconductor, Inc. Preliminary GS881E18/36T-11/11.5/100/80/66 AC Test Conditions Parameter Conditions Input high level 2.3 V Input low level 0.2 V Input slew rate 1 V/ns Input reference level 1.25 V Output reference level 1.25 V Output load Fig. 1& 2 Notes: 1. Include scope and jig capacitance. 2. Test conditions as specified with output loading as shown in Fig. 1 unless otherwise noted. 3. Output Load 2 for tLZ, tHZ, tOLZ and tOHZ 4. Device is deselected as defined by the Truth Table. Output Load 2 Output Load 1 DQ 2.5 V 50Ω 30pF* 225Ω DQ 5pF* VT = 1.25 V 225Ω * Distributed Test Jig Capacitance DC Electrical Characteristics Parameter Symbol Test Conditions Min Max Input Leakage Current (except mode pins) IIL VIN = 0 to VDD –1 uA 1 uA ZZ Input Current IINZZ VDD ≥ VIN ≥ VIH 0 V ≤ VIN ≤ VIH –1 uA –1 uA 1 uA 300 uA Mode Pin Input Current IINM VDD ≥ VIN ≥ VIL 0 V ≤ VIN ≤ VIL –300 uA –1 uA 1 uA 1 uA Output Leakage Current IOL Output Disable, VOUT = 0 to VDD –1 uA 1 uA Output High Voltage VOH IOH = –8 mA, VDDQ = 2.375 V 1.7 V — Output High Voltage VOH IOH = –8 mA, VDDQ = 3.135 V 2.4 V — Output Low Voltage VOL IOL = 8 mA — 0.4 V Rev: 1.10 9/2000 15/34 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2000, Giga Semiconductor, Inc. Preliminary GS881E18/36T-11/11.5/100/80/66 Operating Currents -11 –40 to 85°C 0 to 70°C –40 to 85°C 0 to 70°C –40 to 85°C 0 to 70°C –40 to 85°C Unit IDD Pipeline 225 235 225 235 225 235 200 210 185 195 mA IDD Flow-Thru 180 190 180 190 180 190 175 185 165 175 mA ISB Pipeline 30 40 30 40 30 40 30 40 30 40 mA ISB Flow-Thru 30 40 30 40 30 40 30 40 30 40 mA IDD Pipeline 80 90 80 90 80 90 70 80 60 70 mA IDD Flow-Thru 65 75 65 75 65 75 55 65 50 60 mA Operating Current Device Selected; All other inputs ≥VIH or ≤ VIL Output open Deselect Current Rev: 1.10 9/2000 -66 0 to 70°C Symbol Device Deselected; All other inputs ≥ VIH or ≤ VIL -80 –40 to 85°C Test Conditions ZZ ≥ VDD - 0.2V -100 0 to 70°C Parameter Standby Current -11.5 16/34 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2000, Giga Semiconductor, Inc. Preliminary GS881E18/36T-11/11.5/100/80/66 AC Electrical Characteristics Pipeline FlowThru Parameter Symbol Clock Cycle Time -11 -11.5 -100 -80 -66 Unit Min Max Min Max Min Max Min Max Min Max tKC 10 — 10 — 10 — 12.5 — 15 — ns Clock to Output Valid tKQ — 4.0 — 4.0 — 4.0 — 4.5 — 5 ns Clock to Output Invalid tKQX 1.5 — 1.5 — 1.5 — 1.5 — 1.5 — ns 1 Clock to Output in Low-Z tLZ 1.5 — 1.5 — 1.5 — 1.5 — 1.5 — ns Clock Cycle Time tKC 15.0 — 15.0 — 15.0 — 15.0 — 20 — ns Clock to Output Valid tKQ — 11.0 — 11.5 — 12.0 — 14.0 — 18 ns Clock to Output Invalid tKQX 3.0 — 3.0 — 3.0 — 3.0 — 3.0 — ns Clock to Output in Low-Z tLZ1 3.0 — 3.0 — 3.0 — 3.0 — 3.0 — ns Clock HIGH Time tKH 1.7 — 1.7 — 2 — 2 — 2.3 — ns Clock LOW Time tKL 2 — 2 — 2.2 — 2.2 — 2.5 — ns Clock to Output in High-Z tHZ1 1.5 4.0 1.5 4.2 1.5 4.5 1.5 4.5 1.5 4.8 ns G to Output Valid tOE — 4.0 — 4.2 — 4.5 — 4.5 — 4.8 ns G to output in Low-Z tOLZ1 0 — 0 — 0 — 0 — 0 — ns G to output in High-Z tOHZ1 — 4.0 — 4.2 — 4.5 — 4.5 — 4.8 ns Setup time tS 1.5 — 2.0 — 2.0 — 2.0 — 2.0 — ns Hold time tH 0.5 — 0.5 — 0.5 — 0.5 — 0.5 — ns ZZ setup time tZZS2 5 — 5 — 5 — 5 — 5 — ns ZZ hold time tZZH2 1 — 1 — 1 — 1 — 1 — ns ZZ recovery tZZR 20 — 20 — 20 — 20 — 20 — ns Notes: 1. These parameters are sampled and are not 100% tested. 2. ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold times as specified above. Rev: 1.10 9/2000 17/34 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2000, Giga Semiconductor, Inc. Preliminary GS881E18/36T-11/11.5/100/80/66 Write Cycle Timing Single Write Burst Write Deselected Write CK tS tH tKH tKL tKC ADSP is blocked by E inactive ADSP tS tH ADSC initiated write ADSC tS tH ADV tS tH A0–An ADV must be inactive for ADSP Write WR2 WR1 WR3 tS tH GW tS tH BW tS tH BA–BD WR1 WR1 WR2 tS tH WR3 WR3 E1 masks ADSP E1 tS tH Deselected with E2 E2 E2 only sampled with ADSP or ADSC G tS tH DQA–DQD Rev: 1.10 9/2000 Hi-Z D1A Write specified byte for 2A and all bytes for 2B, 2C& 2D D2A D2B D2C D2D 18/34 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. D3A © 2000, Giga Semiconductor, Inc. Preliminary GS881E18/36T-11/11.5/100/80/66 Flow Through Read Cycle Timing Single Read Burst Read tKL CK tKH tS tH tKC ADSP is blocked by E inactive ADSP tS tH ADSC initiated read ADSC tS tH Suspend Burst Suspend Burst ADV tS tH A0–An RD1 RD2 RD3 tS tH tS tH GW BW BA–BD tS tH E1 masks ADSP E1 tS tH E2 only sampled with ADSP or ADSC Deselected with E 2 E2 tOE tOHZ G tKQX tOLZ DQA–DQD Q1A Hi-Z Q2A tKQX Q2B Q2c Q2D Q3A tLZ tHZ tKQ Rev: 1.10 9/2000 19/34 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2000, Giga Semiconductor, Inc. Preliminary GS881E18/36T-11/11.5/100/80/66 Flow Through Read-Write Cycle Timing Single Write Single Read Burst Read CK tS tH tKC tKH tKL ADSP is blocked by E inactive ADSP tS tH ADSC initiated read ADSC tS tH ADV tS tH A0–An RD1 WR1 tS RD2 tH GW tH tS BW tS tH BA–BD WR1 tS tH E1 masks ADSP E1 tS tH E2 only sampled with ADSP and ADSC E2 tOE tOHZ G tS tKQ DQA–DQD Hi-Z Q1A tH D1A Q2A Q2B Q2c Q2D Q2A Burst wrap around to it’s initial state Rev: 1.10 9/2000 20/34 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2000, Giga Semiconductor, Inc. Preliminary GS881E18/36T-11/11.5/100/80/66 Pipelined DCD Read Cycle Timing Single Read tKL Burst Read CK tS tH tKH tKC ADSP is blocked by E1 inactive ADSP tS tH ADSC initiated read ADSC tS tH Suspend Burst ADV tS tH A0–An RD1 RD3 RD2 tS tH tS tH GW BW BA–BD tS tH E1 masks ADSP E1 tS tH E2 only sampled with ADSP or ADSC E2 tOE G tOHZ Hi-Z tOLZ Q1A DQA–DQD tKQX Q2A tKQX Q2B Q2c Q2D Q3A tLZ tHZ tKQ Rev: 1.10 9/2000 21/34 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2000, Giga Semiconductor, Inc. Preliminary GS881E18/36T-11/11.5/100/80/66 Pipelined DCD Read-Write Cycle Timing Single Write Burst Read Single Read tKL CK tS tH tKH tKC ADSP is blocked by E1 inactive ADSP tS tH ADSC initiated read ADSC tS tH ADV tS tH A0–An WR1 RD1 RD2 tS tH GW tS tH BW tH tS BA–BD WR1 tS tH E1 masks ADSP E1 tS tH E2 only sampled with ADSP and ADSC E2 tOE tOHZ G DQA–DQD Rev: 1.10 9/2000 Hi-Z tS tH tKQ Q1A D1a Q2A 22/34 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Q2B Q2c Q2D © 2000, Giga Semiconductor, Inc. Preliminary GS881E18/36T-11/11.5/100/80/66 CK tS tH tKC tKH tKL ADSP ADSC tZZS ZZ ~ ~ ~ ~ ~ ~ ~~ ~ ~ Sleep Mode Timing Diagram tZZH tZZR Snooze Application Tips Single and Dual Cycle Deselect SCD devices force the use of “dummy read cycles” (read cycles that are launched normally but that are ended with the output drivers inactive) in a fully synchronous environment. Dummy read cycles waste performance but their use usually assures there will be no bus contention in transitions from reads to writes or between banks of RAMs. DCD SRAMs do not waste bandwidth on dummy cycles and are logically simpler to manage in a multiple bank application (wait states need not be inserted at bank address boundary crossings) but greater care must be exercised to avoid excessive bus contention. JTAG Port Operation Overview The JTAG Port on this RAM operates in a manner consistent with IEEE Standard 1149.1-1990, a serial boundary scan interface standard (commonly referred to as JTAG), but does not implement all of the functions required for 1149.1 compliance. Some functions have been modified or eliminated because they can slow the RAM. Nevertheless, the RAM supports 1149.1-1990 TAP (Test Access Port) Controller architecture, and can be expected to function in a manner that does not conflict with the operation of Standard 1149.1 compliant devices. The JTAG Port interfaces with conventional TTL / CMOS logic level signaling. Disabling the JTAG Port It is possible to use this device without utilizing the JTAG port. The port is reset at power-up and will remain inactive unless clocked. TCK, TDI, and TMS are designed with internal pull-up circuits. To assure normal operation of the RAM with the JTAG Port unused, TCK, TDI, and TMS may be left floating or tied to either VDD or VSS. TDO should be left unconnected. Rev: 1.10 9/2000 23/34 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2000, Giga Semiconductor, Inc. Preliminary GS881E18/36T-11/11.5/100/80/66 JTAG Pin Descriptions Pin Pin Name I/O Description TCK Test Clock In Clocks all TAP events. All inputs are captured on the rising edge of TCK and all outputs propagate from the falling edge of TCK. TMS Test Mode Select In The TMS input is sampled on the rising edge of TCK. This is the command input for the TAP controller state machine. An undriven TMS input will produce the same result as a logic one input level. TDI Test Data In In The TDI input is sampled on the rising edge of TCK. This is the input side of the serial registers placed between TDI and TDO. The register placed between TDI and TDO is determined by the state of the TAP Controller state machine and the instruction that is currently loaded in the TAP Instruction Register (refer to the TAP Controller State Diagram). An undriven TDI pin will produce the same result as a logic one input level. TDO Test Data Out Out Output that is active depending on the state of the TAP state machine. Output changes in response to the falling edge of TCK. This is the output side of the serial registers placed between TDI and TDO. Note: This device does not have a TRST (TAP Reset) pin. TRST is optional in IEEE 1149.1. The Test-Logic-Reset state is entered while TMS is held high for five rising edges of TCK. The TAP Controller is also reset automaticly at power-up. JTAG Port Registers Overview The various JTAG registers, refered to as TAP Registers, are selected (one at a time) via the sequences of 1s and 0s applied to TMS as TCK is strobed. Each of the TAP Registers are serial shift registers that capture serial input data on the rising edge of TCK and push serial data out on the next falling edge of TCK. When a register is selected it is placed between the TDI and TDO pins. Instruction Register The Instruction Register holds the instructions that are executed by the TAP controller when it is moved into the Run, Test/Idle or the various data register states. Instructions are 3 bits long. The Instruction Register can be loaded when it is placed between the TDI and TDO pins. The Instruction Register is automatically preloaded with the IDCODE instruction at power-up or whenever the controller is placed in Test-Logic-Reset state. Bypass Register The Bypass Register is a single-bit register that can be placed between TDI and TDO. It allows serial test data to be passed through the RAMs JTAG Port to another device in the scan chain with as little delay as possible. Boundary Scan Register Boundary Scan Register is a collection of flip flops that can be preset by the logic level found on the RAM’s input or I/O pins. The flip flops are then daisy chained together so the levels found can be shifted serially out of the JTAG Port’s TDO pin. The Boundary Scan Register also includes a number of place holder flip flops (always set to a logic 1). The relationship between the device pins and the bits in the Boundary Scan Register is described in the Scan Order Table following. The Boundary Scan Register, under the control of the TAP Controller, is loaded with the contents of the RAMs I/O ring when the controller is in Capture-DR state and then is placed between the TDI and TDO pins when the controller is moved to Shift-DR state. Two TAP instructions can be used to activate the Boundary Scan Register. Rev: 1.10 9/2000 24/34 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2000, Giga Semiconductor, Inc. Preliminary GS881E18/36T-11/11.5/100/80/66 JTAG TAP Block Diagram 0 Bypass Register 2 1 0 Instruction Register TDI TDO ID Code Register 31 30 29 · · · · 2 1 0 Boundary Scan Register n · · · · · · · · · 2 1 0 TMS Test Access Port (TAP) Controller TCK Identification (ID) Register The ID Register is a 32-bit register that is loaded with a device and vendor specific 32-bit code when the controller is put in Capture-DR state with the IDCODE command loaded in the Instruction Register. The code is loaded from a 32-bit on-chip ROM. It describes various attributes of the RAM as indicated below. The register is then placed between the TDI and TDO pins when the controller is moved into Shift-DR state. Bit 0 in the register is the LSB and the first to reach TDO when shifting begins. Die Revision Code I/O Configuration Not Used GSI Technology JEDEC Vendor ID Code Presence Register ID Register Contents Bit # 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 1 10 9 8 7 6 5 4 3 2 1 1 0 x36 X X X X 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 0 0 0 1 1 0 1 1 0 0 1 1 x18 X X X X 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 1 0 0 0 1 1 0 1 1 0 0 1 1 Tap Controller Instruction Set Overview There are two classes of instructions defined in the Standard 1149.1-1990; the standard (Public) instructions, and device specific (Private) instructions. Some Public instructions, are mandatory for 1149.1 compliance. Optional Public instructions must be implemented in prescribed ways. Although the TAP controller in this device follows the 1149.1 conventions, it is not 1194.1compliant because some of the mandatory instructions are not fully implemented. The TAP on this device may be used to monitor all input and I/O pads, but cannot be used to load address, data or control signals into the RAM or to preload the I/O buffers.This device will not perform EXTEST, INTEST or the SAMPLE/PRELOAD command. When the TAP controller is placed in Capture-IR state the two least significant bits of the instruction register are loaded with 01. When the controller is moved to the Shift-IR state the Instruction Register is placed between TDI and TDO. In this state the desired Rev: 1.10 9/2000 25/34 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2000, Giga Semiconductor, Inc. Preliminary GS881E18/36T-11/11.5/100/80/66 instruction is serially loaded through the TDI input (while the previous contents are shifted out at TDO). For all instructions, the TAP executes newly loaded instructions only when the controller is moved to Update-IR state. The TAP instruction set for this device is listed in the following table. JTAG Tap Controller State Diagram 1 0 Test Logic Reset 0 Run Test Idle 1 Select DR 1 Select IR 0 0 1 1 Capture DR Capture IR 0 0 Shift DR 1 1 1 Shift IR 0 1 1 Exit1 DR 0 Exit1 IR 0 0 Pause DR 1 Exit2 DR 1 0 Pause IR 1 Exit2 IR 0 1 Update DR Update IR 1 1 0 0 0 0 Instruction Descriptions BYPASS When the BYPASS instruction is loaded in the Instruction Register the Bypass Register is placed between TDI and TDO. This occurs when the TAP controller is moved to the Shift-DR state. This allows the board level scan path to be shortened to facilitate testing of other devices in the scan path. SAMPLE/PRELOAD SAMPLE/PRELOAD is a Standard 1149.1 mandatory public instruction. When the SAMPLE/PRELOAD instruction is loaded in the Instruction Register, moving the TAP controller into the Capture-DR state loads the data in the RAMs input and I/O buffers into the Boundary Scan Register. Because the RAM clock is independent from the TAP Clock (TCK) it is possible for the TAP to attempt to capture the I/O ring contents while the input buffers are in transition (i.e. in a metastable state). Although allowing the TAP to sample metastable inputs will not harm the device, repeatable results cannot be expected. RAM input signals must be stabilized for long enough to meet the TAPs input data capture set-up plus hold time (tTS plus tTH ). The RAMs clock inputs need not be paused for any other TAP operation except capturing the I/O ring contents into the Boundary Scan Register. Moving the controller to Shift-DR state then places the boundary scan register between the TDI and TDO pins. Because the PRELOAD portion of the command is not implemented in this device, moving the controller to the UpdateDR state with the SAMPLE / PRELOAD instruction loaded in the Instruction Register has the same effect as the Pause-DR command. This functionality is not Standard 1149.1-compliant. Rev: 1.10 9/2000 26/34 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2000, Giga Semiconductor, Inc. Preliminary GS881E18/36T-11/11.5/100/80/66 EXTEST EXTEST is an IEEE 1149.1 mandatory public instruction. It is to be executed whenever the instruction register, whatever length it may be in the device, is loaded with all logic 0s. EXTEST is not implemented in this device. Therefore, this device is not 1149.1-compliant. Nevertheless, this RAM’s TAP does respond to an all zeros instruction, as follows. With the EXTEST (000) instruction loaded in the instruction register the RAM responds just as it does in response to the BYPASS instruction described above. IDCODE The IDCODE instruction causes the ID ROM to be loaded into the ID register when the controller is in Capture-DR mode and places the ID register between the TDI and TDO pins in Shift-DR mode. The IDCODE instruction is the default instruction loaded in at power up and any time the controller is placed in the Test-Logic-Reset state. SAMPLE-Z If the SAMPLE-Z instruction is loaded in the instruction register, all RAM outputs are forced to an inactive drive state (high-Z) and the Boundary Scan Register is connected between TDI and TDO when the TAP controller is moved to the Shift-DR state. RFU These instructions are Reserved for Future Use. In this device they replicate the BYPASS instruction. JTAG TAP Instruction Set Summary Instruction Code Description Notes EXTEST 000 Replicates BYPASS instruction. Places Bypass Register between TDI and TDO. This RAM does not implement 1149.1 EXTEST function. *Not 1149.1 Compliant * IDCODE 001 Preloads ID Register and places it between TDI and TDO. SAMPLE-Z 010 Captures I/O ring contents. Places the Boundary Scan Register between TDI and TDO. Forces all RAM output drivers to High-Z. 1 RFU 011 Do not use this instruction; Reserved for Future Use. Replicates BYPASS instruction. Places Bypass Register between TDI and TDO. 1 SAMPLE/ PRELOAD 100 Captures I/O ring contents. Places the Boundary Scan Register between TDI and TDO. This RAM does not implement 1149.1 PRELOAD function. *Not 1149.1 Compliant * 1 GSI 101 GSI private instruction. 1 RFU 110 Do not use this instruction; Reserved for Future Use. Replicates BYPASS instruction. Places Bypass Register between TDI and TDO. 1 BYPASS 111 Places Bypass Register between TDI and TDO. 1 1 1, 2 Notes: 1. Instruction codes expressed in binary, MSB on left, LSB on right. 2. Default instruction automatically loaded at power-up and in test-logic-reset state. Rev: 1.10 9/2000 27/34 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2000, Giga Semiconductor, Inc. Preliminary GS881E18/36T-11/11.5/100/80/66 JTAG Port Recommended Operating Conditions and DC Characteristics Parameter Symbol Min. Max. Unit Notes Test Port Input High Voltage VIHT 1.7 VDD +0.3 V 1, 2 Test Port Input Low Voltage VILT –0.3 0.8 V 1, 2 TMS, TCK and TDI Input Leakage Current IINTH –300 1 uA 3 TMS, TCK and TDI Input Leakage Current IINTL –1 1 uA 4 TDO Output Leakage Current IOLT –1 1 uA 5 Test Port Output High Voltage VOHT 2.4 — V 6, 7 Test Port Output Low Voltage VOLT — 0.4 V 6, 8 Notes: 1. This device features input buffers compatible with both 3.3 V and 2.5 V I/O drivers. 2. Input Under/overshoot voltage must be –2 V > Vi < V DD +2 V with a pulse width not to exceed 20% tTKC. 3. VDD ≥ VIN ≥ VIL 4. 0 V ≤ VIN ≤ VIL 5. Output Disable, VOUT = 0 to VDD 6. The TDO output driver is served by the VDD supply. 7. IOH = –4 mA 8. IOL = +4 mA JTAG Port AC Test Conditions Parameter Conditions Input high level 2.3 V Input low level 0.2 V Input slew rate 1 V/ns Input reference level 1.25 V Output reference level 1.25 V DQ 50Ω 30pF* VT = 1.25 V * Distributed Test Jig Capacitance Notes: 1. Include scope and jig capacitance. Rev: 1.10 9/2000 JTAG Port AC Test Load 28/34 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2000, Giga Semiconductor, Inc. Preliminary GS881E18/36T-11/11.5/100/80/66 JTAG Port Timing Diagram tTKH tTKL tTKC TCK tTS tTH TMS TDI TDO tTKQ JTAG Port AC Electrical Characteristics Parameter Symbol Min Max Unit TCK Cycle Time tTKC 20 — ns TCK Low to TDO Valid tTKQ — 10 ns TCK High Pulse Width tTKH 10 — ns TCK Low Pulse Width tTKL 10 — ns TDI & TMS Set Up Time tTS 5 — ns TDI & TMS Hold Time tTH 5 — ns Rev: 1.10 9/2000 29/34 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2000, Giga Semiconductor, Inc. Preliminary GS881E18/36T-11/11.5/100/80/66 GS811E18/36T TQFP Boundary Scan Register Order x36 x18 Pin Order x36 x18 Pin Order x36 x18 Pin 1 PH = 0 n/a 30 A9 81 59 FT 14 2 PH = 0 n/a 31 A8 82 60 DP 16 3 A10 44 32 ADV 83 61 PH = 0 n/a 4 A11 45 33 ADSP 84 62 DQD1 DQB5 18 5 A12 46 34 ADSC 85 63 DQD2 DQB6 19 6 A13 47 35 G 86 64 DQD3 DQB7 22 7 A14 48 36 BW 87 65 DQD4 DQB8 23 8 A15 49 37 GW 88 66 DQD5 DQB9 24 9 A16 50 38 CK 89 67 DQD6 NC = 1 25 10 x36 = DQA9 NC = 1 51 39 PH = 0 n/a 68 DQD7 NC = 1 28 11 DQA8 NC = 1 52 40 PH = 0 n/a 69 DQD8 NC = 1 29 12 DQA7 NC = 1 53 41 A17 92 70 x36 = DQD9 NC = 1 30 13 DQA6 NC = 1 56 42 BA 93 71 LBO 31 14 DQA5 NC = 1 57 43 BB 94 72 A5 32 15 DQA4 DQA1 58 44 BC NC = 1 95 73 A4 33 16 DQA3 DQA2 59 45 BD NC = 1 96 74 A3 34 17 DQA2 DQA3 62 46 E2 97 75 A2 35 18 DQA1 DQA4 63 47 E1 98 76 A1 36 19 ZZ 64 48 A7 99 77 A0 37 20 QE 66 49 A6 100 78 PH = 0 n/a 21 DQB1 DQA5 68 50 x36 = DQC9 NC = 1 1 22 DQB2 DQA6 69 51 DQC8 NC = 1 2 23 DQB3 DQA7 72 52 DQC7 NC = 1 3 24 DQB4 DQA8 73 53 DQC6 NC = 1 6 25 DQB5 DQA9 74 54 DQC5 NC = 1 7 26 DQB6 NC = 1 75 55 DQC4 DQB1 8 27 DQB7 NC = 1 78 56 DQC3 DQB2 9 28 DQB8 NC = 1 79 57 DQC2 DQB3 12 29 x36 = DQB9 A18 80 58 DQC1 DQB4 13 BPR 1999.08.11 Notes: 1. The Boundary Scan Register contains a number of registers that are not connected to any pin. They default to the value shown at reset. 2. Registers are listed in exit order (i.e. Location 1 is the first out of the TDO pin. 3. NC = No Connect, NA = Not Active, PH = Place Holder (No associated pin) Rev: 1.10 9/2000 30/34 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2000, Giga Semiconductor, Inc. Preliminary GS881E18/36T-11/11.5/100/80/66 Output Driver Characteristics 120.0 100.0 Pull Down Drivers 80.0 60.0 40.0 20.0 VDDQ I Out (mA) I Out 0.0 VOut -20.0 VSS -40.0 -60.0 Pull Up Drivers -80.0 -100.0 -120.0 -140.0 -0.5 0 0.5 1 1.5 2 2.5 3 3.5 4 V Out (Pull Down) VDDQ - V Out (Pull Up) 3.6V PD HD 3.3V PD HD 3.1V PD HD 3.1V PU HD 3.3V PU HD 3.6V PU HD BPR 1999.05.18 Rev: 1.10 9/2000 31/34 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2000, Giga Semiconductor, Inc. Preliminary GS881E18/36T-11/11.5/100/80/66 TQFP Package Drawing L Min. Nom. Max Standoff 0.05 0.10 0.15 A2 Body Thickness 1.35 1.40 1.45 b Lead Width 0.20 0.30 0.40 c Lead Thickness 0.09 — 0.20 D Terminal Dimension 21.9 22.0 22.1 D1 Package Body 19.9 20.0 20.1 E Terminal Dimension 15.9 16.0 16.1 E1 Package Body 13.9 14.0 14.1 e Lead Pitch — 0.65 — L Foot Length 0.45 0.60 0.75 L1 Lead Length — 1.00 — Y Coplanarity — — 0.10 θ Lead Angle 0° — 7° c e D A1 L1 D1 Description Pin 1 Symbol θ b A1 A2 E1 Y E Notes: 1. All dimensions are in millimeters (mm). 2. Package width and length do not include mold protrusion. BPR 1999.05.18 Rev: 1.10 9/2000 32/34 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2000, Giga Semiconductor, Inc. Preliminary GS881E18/36T-11/11.5/100/80/66 Ordering Information for GSI Synchronous Burst RAMs Org Part Number1 Type Package Speed2 (MHz/ns) TA3 514K x 18 GS881E18T-11 ByteSafe DCD Pipeline/Flow Through TQFP 100/11 C 514K x 18 GS881E18T-11.5 ByteSafe DCD Pipeline/Flow Through TQFP 100/11.5 C 514K x 18 GS881E18T-100 ByteSafe DCD Pipeline/Flow Through TQFP 100/12 C 514K x 18 GS881E18T-80 ByteSafe DCD Pipeline/Flow Through TQFP 80/14 C 514K x 18 GS881E18T-66 ByteSafe DCD Pipeline/Flow Through TQFP 66/18 C 256K x 36 GS881E36T-11 ByteSafe DCD Pipeline/Flow Through TQFP 100/11 C 256K x 36 GS881E36T-11.5 ByteSafe DCD Pipeline/Flow Through TQFP 100/11.5 C 256K x 36 GS881E36T-100 ByteSafe DCD Pipeline/Flow Through TQFP 100/12 C 256K x 36 GS881E36T-80 ByteSafe DCD Pipeline/Flow Through TQFP 80/14 C 256K x 36 GS881E36T-66 ByteSafe DCD Pipeline/Flow Through TQFP 66/18 C 514K x 18 GS881E18T-11I ByteSafe DCD Pipeline/Flow Through TQFP 100/11 I 514K x 18 GS881E18T-11.5I ByteSafe DCD Pipeline/Flow Through TQFP 100/11.5 I 514K x 18 GS881E18T-100I ByteSafe DCD Pipeline/Flow Through TQFP 100/12 I 514K x 18 GS881E18T-80I ByteSafe DCD Pipeline/Flow Through TQFP 80/14 I 514K x 18 GS881E18T-66I ByteSafe DCD Pipeline/Flow Through TQFP 66/18 I 256K x 36 GS881E36T-11I ByteSafe DCD Pipeline/Flow Through TQFP 100/11 I 256K x 36 GS881E36T-11.5I ByteSafe DCD Pipeline/Flow Through TQFP 100/11.5 I 256K x 36 GS881E36T-100I ByteSafe DCD Pipeline/Flow Through TQFP 100/12 I 256K x 36 GS881E36T-80I ByteSafe DCD Pipeline/Flow Through TQFP 80/14 I 256K x 36 GS881E36T-66I ByteSafe DCD Pipeline/Flow Through TQFP 66/18 I Status Notes: 1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS881E18TT. 2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each device is Pipeline/Flow Through mode-selectable by the user. 3. TA = C = Commercial Temperature Range. TA = I = Industrial Temperature Range. 4. GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings. Rev: 1.10 9/2000 33/34 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2000, Giga Semiconductor, Inc. Preliminary GS881E18/36T-11/11.5/100/80/66 Revision History DS/DateRev. Code: Old; New Types of Changes Format or Content Format/Typos • Last Page/Fixed “GSGS..” in Ordering Information Note. • Fromatted Pin Outs and Pin Description to new small caps. • Formatted Block diagrams to new small caps. • Formatted Timing Diagrams to new small caps. • Changed “Flow thru” to “Flow Through” in Timing Diagrams. • Boundary Scan Register/Formatted to new small caps. • Package Diagram/Changed “Dimesion” to “Dimension”. Content • 5/Fixed pin description table to match pinouts. • Pin Description/Changed chip enables to match pins. • Pin Description/Changed pin 80 from NC to Address Input. • Pin Description/Rearranged Address Inputs to match order of Pinout • Changed I to O for TDO • Package Diagram/Changed Dimension D Max from 20.1 to 22.1 • GS881E18/36TRev1.04h 5/ 1999; 1.05 9/1999I GS881E18/36T1.05 9/ 1999I;1.05 11/1999J GS881E18/36T1.05 11/ 1999K881E18/36T1.06 1/ 200010L GS881E18/36T1.06 1/ 2000L; GS881E18/36T1.07 3/ 2000N; GS881E18/36T1.07 3/ 2000N; GS881E18/36T1.08 3/ 2000O; Content Content Content Content 881E GS881E18/36T1.08 3/ 2000O; 881E183236_r1_09 Content/Format 881E18_r1_09; 881E18_r1_10 Content Rev: 1.10 9/2000 Page;Revisions;Reason • First Release of 880 F. • Changed order of TQFP Address Inputs to match pinout. • Changed order of TQFP DATA Input and Output pins to match pinout. • New GSI Logo. • Changed all speed bin information (headings, references, tables, ordering info..) to reflect 150 - 80Mhz • Corrections to AC Electrical Characteristics Table • Fixed Boundary Scan Register Added Pin 29 • Removed 150 MHz speed bin • Changed 133 MHz and 117 MHz speed bins to 11 ns and 11.5 ns (100 MHz) numbers • Updated format to comply with Technical Publications standards • Updated Capitance table—removed Input row and changed Output row to I/O 34/34 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2000, Giga Semiconductor, Inc.