HSMC HSC2682 Npn epitaxial planar transistor Datasheet

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6626-B
Issued Date : 1994.12.07
Revised Date : 2000.10.01
Page No. : 1/3
HSC2682
NPN EPITAXIAL PLANAR TRANSISTOR
Description
Audio frequency power amplifier, high frequency power amplifier.
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature ............................................................................................ -50 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................... 1.2 W
Total Power Dissipation (Tc=25°C) ...................................................................................... 8 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage .................................................................................... 180 V
BVCEO Collector to Emitter Voltage................................................................................. 180 V
BVEBO Emitter to Base Voltage ........................................................................................... 5 V
IC Collector Current ....................................................................................................... 100 mA
Electrical Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min.
180
180
5
90
100
-
Typ.
120
0.8
200
200
-
Max.
1
1
500
1.5
320
5
Unit
V
V
V
uA
uA
mV
V
MHz
pF
Test Conditions
IC=1mA
IC=10mA
IE=10uA
VCB=180V
VEB=3V
IC=50mA, IB=5mA
IC=50mA, IB=5mA
IC=1mA, VCE=5V
IC=10mA, VCE=5V
IC=20mA, VCE=10V
VCB=10V
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE2
Rank
Range
O
100-200
Y
160-320
HSMC Product Specification
HI-SINCERITY
Spec. No. : HE6626-B
Issued Date : 1994.12.07
Revised Date : 2000.10.01
Page No. : 2/3
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
Saturation Voltage & Collector Current
1000
1
100
Saturation Voltage (mV)
VBE(sat) @ IC=10IB
hFE
VCE=5V
10
0.1
VCE(sat) @ IC=10IB
0.01
1
0.01
0.1
1
10
0.01
100
0.1
1
10
100
1000
10000
Collector Current (mA)
Collector Current (mA)
Capacitance & Reverse-Biased Voltage
Cutoff Freuency & Collector Current
10
Cutoff Freqiemcu (MHz)
Capacitance (pF)
1000
Cob
1
VCE=10 V
100
10
1
0.1
1
10
100
Reverse-Biased Voltage (V)
1
10
100
Collector Current (mA)
Safe Operating Area
Collector Current (mA)
10000
1000
100
PT=1 ms
PT=100 ms
10
PT=1 s
1
1
10
100
1000
Forward Voltage (V)
HSMC Product Specification
HI-SINCERITY
Spec. No. : HE6626-B
Issued Date : 1994.12.07
Revised Date : 2000.10.01
Page No. : 3/3
MICROELECTRONICS CORP.
TO-126ML Dimension
Marking :
A
HSMC Logo
Part Number
Date Code
B
D
F
C
Rank
O
H
E
Product Series
Ink Marking
3
2
I
Style : Pin 1.Emitter 2.Collector 3.Base
G
N
1
J
M
L
K
3-Lead TO-126ML Plastic Package
HSMC Package Code : D
*:Typical
Inches
Min.
Max.
0.1356
0.1457
0.0170
0.0272
0.0344
0.0444
0.0501
0.0601
0.1131
0.1231
0.0737
0.0837
0.0294
0.0494
0.0462
0.0562
DIM
A
B
C
D
E
F
G
H
Millimeters
Min.
Max.
3.44
3.70
0.43
0.69
0.87
1.12
1.27
1.52
2.87
3.12
1.87
2.12
0.74
1.25
1.17
1.42
DIM
I
J
K
L
M
N
O
Inches
Min.
Max.
*0.1795
0.0268
0.0331
0.5512
0.5906
0.2903
0.3003
0.1378
0.1478
0.1525
0.1625
0.0740
0.0842
Millimeters
Min.
Max.
*4.56
0.68
0.84
14.00
15.00
7.37
7.62
3.50
3.75
3.87
4.12
1.88
2.14
Notes : 1.Dimension and tolerance based on our Spec. dated Mar. 6,1995.
2.Controlling dimension : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory :
• Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
• Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5983621~5 Fax : 886-3-5982931
• Factory 2 : No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5977061 Fax : 886-3-5979220
HSMC Product Specification
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