PD - 97728A
IRFTS8342PbF
RDS(on) max
19
m
29
m
4.8
nC
8.2
A
(@VGS = 10V)
RDS(on) max
(@VGS = 4.5V)
Qg (typical)
ID
(@TA = 25°C)
6
V
'
±20
'
VGS
HEXFET® Power MOSFET
*
V
'
30
'
VDS
TSOP-6
Applications
System/Load Switch
Features and Benefits
Features
Industry-Standard TSOP-6 Package
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
Orderable part number
Package Type
IRFTS8342TRPBF
TSOP-6
Absolute Maximum Ratings
Parameter
Resulting Benefits
Multi-Vendor Compatibility
Environmentally Friendlier
Increased Reliability
Standard Pack
Form
Quantity
Tape and Reel
3000
Max.
VDS
Drain-to-Source Voltage
30
VGS
Gate-to-Source Voltage
±20
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
8.2
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
6.6
IDM
Pulsed Drain Current
c
PD @TA = 70°C
e
Power Dissipation e
TJ
Linear Derating Factor
Operating Junction and
TSTG
Storage Temperature Range
PD @TA = 25°C
Power Dissipation
Note
Units
V
A
80
2.0
1.3
0.02
-55 to + 150
W
W/°C
°C
Notes through are on page 2
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1
02/23/12
IRFTS8342PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
VDSS/TJ
RDS(on)
Min.
Typ.
Max.
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
30
–––
–––
18
–––
–––
Static Drain-to-Source On-Resistance
–––
–––
15
22
19
29
VGS = 0V, ID = 250μA
V
mV/°C Reference to 25°C, ID = 1mA
VGS = 10V, ID = 8.2A
m
VGS = 4.5V, ID = 6.6A
d
d
VGS(th)
Gate Threshold Voltage
1.35
1.80
2.35
V
VGS(th)
IDSS
Gate Threshold Voltage Coefficient
–––
-5.7
–––
mV/°C
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
–––
–––
–––
–––
–––
–––
1.0
150
100
Gate-to-Source Reverse Leakage
Forward Transconductance
–––
12
–––
–––
-100
–––
Total Gate Charge
Gate-to-Source Charge
–––
–––
4.8
2.1
–––
–––
Qgd
RG
Gate-to-Drain Charge
Gate Resistance
–––
–––
1.6
2.6
–––
–––
td(on)
tr
td(off)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
–––
–––
–––
7.3
15
9.1
–––
–––
–––
tf
Ciss
Fall Time
Input Capacitance
–––
–––
8.2
560
–––
–––
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
–––
–––
102
48
–––
–––
pF
Min.
Typ.
Max.
Units
gfs
Qg
Qgs
Conditions
Units
μA
nA
VDS = VGS, ID = 25μA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 20V
S
VGS = -20V
VDS = 10V, ID = 6.6A
nC
VGS = 4.5V
VDS = 15V
ID = 6.6A
ns
VDD = 15V, VGS = 4.5V
ID = 6.6.A
e
RG = 6.8
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
–––
–––
2.5
ISM
Pulsed Source Current
(Body Diode)
–––
–––
80
c
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
D
G
S
TJ = 25°C, IS = 6.6A, VGS = 0V d
VSD
Diode Forward Voltage
–––
–––
1.0
V
trr
Reverse Recovery Time
–––
8.2
12
ns
TJ = 25°C, IF = 6.6A, VDD = 24V
Qrr
Reverse Recovery Charge
–––
4.5
5.4
nC
di/dt = 100/μs
Thermal Resistance
Parameter
RJA
Junction-to-Ambient
e
d
Typ.
Max.
Units
–––
62.5
°C/W
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width 400μs; duty cycle 2%.
When mounted on 1 ich square copper board.
2
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IRFTS8342PbF
100
100
VGS
10V
8.0V
7.0V
4.5V
3.5V
3.0V
2.75V
2.5V
10
BOTTOM
VGS
10V
8.0V
7.0V
4.5V
3.5V
3.0V
2.75V
2.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
1
2.5V
0.1
BOTTOM
10
2.5V
60μs PULSE WIDTH
60μs PULSE WIDTH
Tj = 150°C
Tj = 25°C
1
0.01
0.01
0.1
1
10
0.1
100
100
100
1.6
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
10
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
T J = 150°C
10
T J = 25°C
VDS = 15V
60μs PULSE WIDTH
1.0
ID = 8.2A
VGS = 10V
1.4
1.2
1.0
0.8
0.6
2
3
4
5
6
7
-60 -40 -20 0
Fig 3. Typical Transfer Characteristics
10000
Fig 4. Normalized On-Resistance vs. Temperature
14.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
VGS, Gate-to-Source Voltage (V)
ID= 6.6A
C oss = C ds + C gd
1000
Ciss
Coss
100
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
1
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Crss
10
12.0
VDS= 24V
VDS= 15V
10.0
VDS= 6.0V
8.0
6.0
4.0
2.0
0.0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
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0
2
4
6
8
10
12
14
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3
IRFTS8342PbF
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
T J = 150°C
10
T J = 25°C
1
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100μsec
1msec
10
10msec
1
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
0.1
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.01
1.6
0.1
1
10
100
VDS, Drain-toSource Voltage (V)
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
10
VGS(th) , Gate threshold Voltage (V)
2.2
8
ID, Drain Current (A)
DC
6
4
2
0
2.0
1.8
1.6
ID = 25μA
1.4
ID = 250μA
ID = 1.0mA
1.2
1.0
0.8
25
50
75
100
125
150
-75 -50 -25
T A , Ambient Temperature (°C)
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 9. Maximum Drain Current vs.
Ambient Temperature
Fig 10. Threshold Voltage vs. Temperature
Thermal Response ( Z thJA ) °C/W
100
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
1
0.1
SINGLE PULSE
( THERMAL RESPONSE )
0.01
0.001
1E-006
1E-005
0.0001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
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40
RDS(on), Drain-to -Source On Resistance ( m)
RDS(on), Drain-to -Source On Resistance (m )
IRFTS8342PbF
ID = 8.2A
35
30
25
T J = 125°C
20
15
T J = 25°C
10
0
5
10
15
90
80
70
Vgs = 4.5V
60
50
40
Vgs = 10V
30
20
10
20
0
10
20
30
40
50
60
70
80
ID, Drain Current (A)
VGS, Gate -to -Source Voltage (V)
Fig 13. Typical On-Resistance vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
1000
100
ID
TOP
0.96A
1.5A
BOTTOM 6.6A
90
80
70
800
Single Pulse Power (W)
EAS , Single Pulse Avalanche Energy (mJ)
100
60
50
40
30
20
600
400
200
10
0
25
50
75
100
125
0
1E-6
150
1E-5
1E-4
Starting T J , Junction Temperature (°C)
Driver Gate Drive
+
-
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
P.W.
Period
D.U.T. ISD Waveform
Reverse
Recovery
Current
V DD
D=
Period
*
RG
1E+0
VGS=10V
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
-
1E-1
Fig 15. Typical Power vs. Time
+
1E-2
Time (sec)
Fig 14. Maximum Avalanche Energy vs. Drain Current
D.U.T
1E-3
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
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5
IRFTS8342PbF
Id
Vds
Vgs
L
VCC
DUT
0
1K
Vgs(th)
S
Qgs1 Qgs2
Qgd
Qgodr
Fig 17b. Gate Charge Waveform
Fig 17a. Gate Charge Test Circuit
V(BR)DSS
15V
DRIVER
L
VDS
D.U.T
RG
+
V
- DD
IAS
20V
tp
A
I AS
0.01
tp
Fig 18a. Unclamped Inductive Test Circuit
V DS
V GS
RG
RD
VDS
90%
D.U.T.
+
-V DD
V10V
GS
Pulse Width µs
Duty Factor
Fig 19a. Switching Time Test Circuit
6
Fig 18b. Unclamped Inductive Waveforms
10%
VGS
td(on)
tr
td(off)
tf
Fig 19b. Switching Time Waveforms
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IRFTS8342PbF
TSOP-6 Package Outline
TSOP-6 Part Marking Information
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DATE CODE MARKING INSTRUCTIONS
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Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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7
IRFTS8342PbF
TSOP-6 Tape & Reel Information
Qualification information†
Qualification level
Moisture Sensitivity Level
Cons umer
(per JE DE C JE S D47F
†††
guidelines )
MS L1
TSOP-6
†††
(per JE DE C J-S T D-020D
RoHS compliant
††
)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 02/2012
8
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