NOT RECOMMENDED FOR NEW DESIGN USE DMP3018SFV DMG7401SFG P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary RDS(ON) max ID max TA = +25°C 13mΩ @ VGS = -10V -9.8A 25mΩ @ VGS = -4.5V -7.0A Low RDS(ON) – Ensures on state losses are minimized Small form factor thermally efficient package enables higher density end products Occupies just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate Datasheet (DMG7401SFGQ) Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data Applications Backlighting Power Management Functions DC-DC Converters Case: PowerDI3333-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.0174 grams (Approximate) Drain PowerDI3333-8 Pin 1 S S S G Gate D D ESD PROTECTED Top View D Gate Protection Diode Bottom View Equivalent Circuit D Source Ordering Information (Note 4) Part Number DMG7401SFG-7 DMG7401SFG-13 Notes: Case PowerDI3333-8 PowerDI3333-8 Packaging 2000/Tape & Reel 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information YYWW NEW PRODUCT BVDSS -30V Features and Benefits G75 = Product Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 17 for 2017) WW = Week Code (01 to 53) G75 PowerDI is a registered trademark of Diodes Incorporated. DMG7401SFG Document number: DS35623 Rev. 12 - 3 1 of 7 www.diodes.com September 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMP3018SFV DMG7401SFG Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage NEW PRODUCT Continuous Drain Current (Note 6) VGS = -10V Steady State t<10s TA = +25°C TA = +70°C TA = +25°C TA = +70°C Value -30 ±25 -9.8 -7.7 ID A -13.5 -10.8 -3.0 -80 -14 104 ID Maximum Continuous Body Diode Forward Current (Note 5) Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Avalanche Current (Notes 7 & 8) Repetitive Avalanche Energy (Notes 7 & 8) L = 1mH Unit V V IS IDM IAR EAR A A A A mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Symbol TA = +25°C TA = +70°C Steady State t<10s TA = +25°C TA = +70°C Steady State t<10s Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range PD RθJA PD RθJA RθJC TJ, TSTG Value 0.94 0.6 137 82 2.2 1.3 60 36 3.0 -55 to +150 Unit W °C/W °C/W W °C/W °C/W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -30 — — — — — — -1 ±10 V μA μA VGS = 0V, ID = -250μA VDS = -30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) RDS(ON) -3.0 11 13 25 — mΩ |Yfs| — 9 10 17 21 V Static Drain-Source On-Resistance -1.7 — — — — VDS = VGS, ID = -250μA VGS = -20V, ID = -12A VGS = -10V, ID = -9A VGS = -4.5V, ID = -5A VDS = -5V, ID = -10A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF — — — — — — — — — — — — 2246 352 294 5.1 20.5 41 7.6 8.0 11.3 15.4 38.0 22.0 2987 468 391 10 30 58 — — 23 31 61 38 pF pF pF Ω nC nC nC nC ns ns ns ns VSD tRR QRR — — — -0.7 20 9.5 -1.0 31 18 V ns nC Forward Transfer Admittance DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time BODY DIODE CHARACTERISTICS Diode Forward Voltage Reverse Recovery Time (Note 9) Reverse Recovery Charge (Note 9) Notes: S Test Condition VDS = -15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz VDS = -15V, ID = -12A VDD = -15V, VGS = -10V, RL = 1.25Ω, RG = 3Ω VGS = 0V, IS = -1A IS = -9.5A, dI/dt = 100A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAR and EAR ratings are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMG7401SFG Document number: DS35623 Rev. 12 - 3 2 of 7 www.diodes.com September 2017 © Diodes Incorporated 30 25 25 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 30 )A ( T 20 N E R R U C 15 N IA R D 10 ,D I- VGS = -10V VGS = -5.0V VGS = -4.5V VGS = -4.0V VGS = -3.5V 0 0.5 1.0 1.5 -VDS , DRAIN -SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 15 10 TA = 150C 0.02 0.01 0 5 10 15 20 25 -ID, DRAIN SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage RDS(on), DRAIN-SOURCE ON-RESISTANCE ( ) 1.5 1.3 1.1 0.9 0.7 1.5 2.0 2.5 3.0 3.5 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics VGS= -4.5V 4.0 TA = 150C TA = 125C TA = 85C 0.02 TA = 25C TA = -55 C 0.01 0 0 5 10 15 20 25 -ID, DRAIN SOURCE CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 30 0.040 0.036 0.032 0.028 VGS = -4.5V ID = -5A 0.024 0.020 0.016 0.012 VGS = -10V ID = -10A 0.008 0.004 0.5 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 5 On-Resistance Variation with Temperature Document number: DS35623 Rev. 12 - 3 T A = 25C 0.03 30 1.7 DMG7401SFG TA = 85C TA = 125 C 0 1.0 2.0 0.03 0 20 TA = -55C VGS = -3.0V R DS(ON), DRAIN-SOURCE ON-RESISTANCE() RDS(ON),DRAIN-SOURCE ON-RESISTANCE() 0 DMG7401SFG VDS = -5.0V 5 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized) NEW PRODUCT NOT RECOMMENDED FOR NEW DESIGN USE DMP3018SFV 3 of 7 www.diodes.com 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 6 On-Resistance Variation with Temperature September 2017 © Diodes Incorporated 30 2.5 25 -IS, SOURCE CURRENT (A) -V , GATE THRESHOLD VOLTAGE (V) VGS(TH) GS(TH), GATE THRESHOLD VOLTAGE(V) 3.0 2.0 1.5 1.0 0.5 DMG7401SFG 20 15 10 5 0 -50 0 0.4 -25 0 25 50 75 100 125 150 (°C)) TA, AMBIENT TEMPERATURE (癈 Fig. 7 Gate Threshold Variation vs. Ambient Temperature 10,000 0.6 0.8 1.0 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 10 -VGS, GATE-SOURCE VOLTAGE (V) C T, JUNCTION CAPACITANCE (pF) f = 1MHz C iss 1,000 Coss Crss 100 0 5 10 15 20 25 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Junction Capacitance 300 2 0 5 10 15 20 25 30 35 40 Qg, TOTAL GATE CHARGE (nC) Fig. 10 Gate-Charge Characteristics 45 RDS(ON) Limited Single Pulse RJA = 135C/W RJA(t) = r(t) * RJA TJ - TA = P * RJA(t) )A 10 ( T N E DC R R PW = 10s U 1 C PW = 1s N IA PW = 100ms R D PW = 10ms ,D PW = 1ms I- 0.1 T J(max) = 150°C 200 150 100 50 0 1E-05 1E-04 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (sec) Fig. 11 Single Pulse Maximum Power Dissipation Document number: DS35623 Rev. 12 - 3 4 100 250 DMG7401SFG 6 -ID, DRAIN CURRENT (A) 350 8 0 30 400 P(PK), PEAK TRANSIENT POIWER (W) NEW PRODUCT NOT RECOMMENDED FOR NEW DESIGN USE DMP3018SFV TA = 25°C VGS = -10V Single Pulse DUT on 1 * MRP Board 0.01 0.01 4 of 7 www.diodes.com PW = 100µs 0.1 1 10 -VDS , DRAIN-SOURCE VOLTAGE (V) Fig. 12 SOA, Safe Operation Area 100 September 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMP3018SFV DMG7401SFG r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 R (t) == r(t) r(t) ** R RθJA RθJA JA(t) JA RθJA 135癈 /W JA == 135℃/W Duty Cycle, D = t1/ t1 /t2t2 Single Pulse 0.001 0.0001 DMG7401SFG Document number: DS35623 Rev. 12 - 3 0.001 0.01 0.1 1 10 t1, (sec) t1, PULSE PULSE DURATION DURATIONTIMES TIME (sec) Fig. 13 13 Transient Transient Thermal Thermal Resistance Resistance Fig. 5 of 7 www.diodes.com 100 1,000 September 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMP3018SFV DMG7401SFG Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 A3 NEW PRODUCT A1 A Seating Plane D L(4x) D2 1 Pin #1 ID E4 b2(4x) E E3 E2 L1(3x) 8 z(4x) PowerDI3333-8 Dim Min Max Typ A 0.75 0.85 0.80 A1 0.00 0.05 0.02 A3 0.203 b 0.27 0.37 0.32 b2 0.15 0.25 0.20 D 3.25 3.35 3.30 D2 2.22 2.32 2.27 E 3.25 3.35 3.30 E2 1.56 1.66 1.61 E3 0.79 0.89 0.84 E4 1.60 1.70 1.65 e 0.65 L 0.35 0.45 0.40 L1 0.39 z 0.515 All Dimensions in mm b e Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 X3 8 Y2 X2 Dimensions Value (in mm) C 0.650 X 0.420 X1 0.420 X2 0.230 X3 2.370 Y 0.700 Y1 1.850 Y2 2.250 Y3 3.700 Y4 0.540 Y4 X1 Y1 Y3 Y 1 X DMG7401SFG Document number: DS35623 Rev. 12 - 3 C 6 of 7 www.diodes.com September 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMP3018SFV DMG7401SFG IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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