Freescale MRF19090 Rf power field effect transistor Datasheet

Freescale Semiconductor
Technical Data
Document Number: MRF19090
Rev. 6, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for Class AB PCN and PCS base station applications with
frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM, and
multicarrier amplifier applications.
• Typical CDMA Performance: 1990 MHz, 26 Volts
IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 9 Watts Avg.
Power Gain — 10 dB
Adjacent Channel Power —
885 kHz: - 47 dBc @ 30 kHz BW
1.25 MHz: - 55 dBc @ 12.5 kHz BW
2.25 MHz: - 55 dBc @ 1 MHz BW
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 1960 MHz, 90 Watts CW
Output Power
Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF19090R3
MRF19090SR3
1930- 1990 MHz, 90 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF19090R3
CASE 465C - 02, STYLE 1
NI - 880S
MRF19090SR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
VDSS
- 0.5, +65
Vdc
Gate- Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
270
1.54
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value
Unit
RθJC
0.65
°C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Class
1 (Minimum)
M3 (Minimum)
MRF19090R3 MRF19090SR3
1
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
V(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
gfs
—
7.2
—
S
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 μAdc)
VGS(th)
2.0
—
4.0
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 750 mAdc)
VGS(Q)
2.5
3.8
4.5
Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
—
0.10
—
Vdc
Crss
—
4.2
—
pF
Two - Tone Common - Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
Gps
10
11.5
—
dB
Two - Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
η
33
35
—
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
IMD
—
- 30
- 28
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
IRL
—
- 12
—
dB
P1dB
—
90
—
W
Characteristic
Off Characteristics
Drain- Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 μA)
On Characteristics
Forward Transconductance
(VDS = 10 Vdc, ID = 3 Adc)
Dynamic Characteristics
Reverse Transfer Capacitance (1)
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Functional Tests (In Freescale Test Fixture)
Pout, 1 dB Compression Point
(VDD = 26 Vdc, Pout = 90 W CW, f = 1990 MHz)
1. Part is internally matched both on input and output.
MRF19090R3 MRF19090SR3
2
RF Device Data
Freescale Semiconductor
VBIAS
B1
B3
B4
B2
VSUPPLY
+
+
+
+
+
C13
C14
+
C19
C9
C10
C8
C7
L1
C5
C6
C11
C12
+
+
C15
C16
C17
L2
R1
RF
INPUT
Z1
Z2
Z3
Z4
C2
C1
B1, B2
B3, B34
C1, C18
C2, C5, C8
C3
C4
C6, C7
C9, C12
C10, C11
C13, C17
C14, C16
C15, C19
R2
Z5
Z6
Z7
RF
OUTPUT
C3
DUT
2 Ferrite Beads, Round, Ferroxcube #56- 590- 65- 3B
Ferrite Beads, Surface Mount, Ferroxcube
0.4 - 2.5 pF Variable Capacitors, Johanson Gigatrim #27285
10 pF Chip Capacitors, ATC #100B100CCA500X
12 pF Chip Capacitor, ATC #100B120CCA500X
0.3 pF Chip Capacitor, ATC #100B0R3CCA500X
120 pF Chip Capacitors, ATC #100B12R1CCA500X
0.1 μF Chip Capacitors, Kemet #CDR33BX104AKWS
1000 pF Chip Capacitors, ATC #100B102JCA50X
22 μF, 35 V Tantalum Chip Capacitors,
Kemet #T491X226K035AS4394
10 μF, 35 V Tantalum Chip Capacitors,
Kemet #T495X106K035AS4394
1 μF, 35 V Tantalum Chip Capacitors,
Kemet #T495X105K035AS4394
Z9
Z8
C4
C18
L1, L2
8 Turns, #26 AWG, 0.085″ OD, 0.330″
Long, Copper Wire
R1, R2
270 Ω, 1/4 W Chip Resistors, Garrett
Instruments #RM73B2B271JT
Z1
ZO = 50 Ohms
Z2
ZO = 50 Ohms, Lambda = 0.123
Z3
ZO = 15.24 Ohms, Lambda = 0.0762
Z4
ZO = 10.11 Ohms, Lambda = 0.0392
Z5
ZO = 6.34 Ohms, Lambda = 0.0711
Z6
ZO = 5.02 Ohms, Lambda = 0.0476
Z7
ZO = 5.54 Ohms, Lambda = 0.0972
Z8
ZO = 50.0 Ohms, Lambda = 0.194
Z9
ZO = 50.0 Ohms
Raw PCB Material 0.030″ Glass Teflon®, εr = 2.55,
2 oz Copper, 3″ x 5″ Dimensions
Figure 1. MRF19090 Test Circuit Schematic
MRF19090R3 MRF19090SR3
RF Device Data
Freescale Semiconductor
3
C9
C10
RFB3 C11 C12
RFB2
RFB4
RFB1
C19
C13 C14
C6
C5
C7
C15
C8
C16 C17
L2
L1
R1
C2
CUTOUT
C3
C4
C1
C18
R2
0.14λ
0.212λ
MRF19090
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF19090 Test Circuit Component Layout
MRF19090R3 MRF19090SR3
4
RF Device Data
Freescale Semiconductor
35
−15
IRL
30
VDD = 26 Vdc
Pout = 90 W (PEP)
IDQ = 750 mA
100 kHz Tone Spacing
25
−20
−25
20
IMD
−30
15
Gps
10
1900
1920
1960
1980
1940
f, FREQUENCY (MHz)
2000
−35
2020
30
VDD = 26 Vdc, IDQ = 1.1 A, f = 1960 MHz, Channel Spacing
(Channel Bandwidth): 885 kHz (30 kHz), 1.25 MHz
(12.5 kHz), 2.25 MHz (1 MHz)
−40
25
885 kHz
−50
2.25 MHz
20
1.25 MHz
10
0
5
15
10
20
25
Pout, OUTPUT POWER (WATTS (Avg.))
30
−80
35
−30
550 mA
−35
−40
750 mA
−45
950 mA
−50
1
10
Pout, OUTPUT POWER (WATTS) PEP
VDD = 26 Vdc
IDQ = 750 mA
f = 1960 MHz
100 kHz Tone Spacing
−30
−40
3rd Order
−50
5th Order
−60
7th Order
−70
100
1
Figure 5. Third Order Intermodulation Distortion
versus Output Power
100
10
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Products
versus Output Power
13
−22
12.5
Pout = 90 W (PEP)
IDQ = 750 mA, f = 1960 MHz
100 kHz Tone Spacing
12.5
G ps , POWER GAIN (dB)
750 mA
550 mA
11
VDD = 26 Vdc
f = 1960 MHz
100 kHz Tone Spacing
10.5
1
10
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Power Gain versus Output Power
−26
12
950 mA
12
11.5
−24
Gps
−28
−30
11.5
IMD
−32
−34
11
−36
100
10.5
22
24
26
28
30
−38
32
VDD, DRAIN VOLTAGE (VOLTS)
Figure 8. Third Order Intermodulation Distortion
and Gain versus Supply Voltage
MRF19090R3 MRF19090SR3
RF Device Data
Freescale Semiconductor
5
IMD, INTERMODULATION DISTORTION (dBc)
VDD = 26 Vdc
f = 1960 MHz
100 kHz Tone Spacing
−25
G ps , POWER GAIN (dB)
−70
Gps
−20
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
η
−60
Figure 4. CDMA Performance ACPR, Gain and
Drain Efficiency versus Output Power
−20
10
9 Channel Forward
Pilot:0, Paging:1, Traffic:8−13,
Sync:32
15
Figure 3. Class AB Performance versus Frequency
−55
−30
35
ADJACENT CHANNEL POWER RATIO (dB)
η
η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
−10
40
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATION DISTORTION (dBc)
η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
TYPICAL CHARACTERISTICS
Zo = 10 Ω
Zsource
Zload
f = 1930 MHz
f = 1990 MHz
1990 MHz
1930 MHz
VDD = 26 V, IDQ = 750 mA, Pout = 90 Watts (PEP)
f
MHz
Zsource
Ω
1930
4.5 - j6.1
1.1 - j4.5
1960
4.4 - j6.0
1.1 - j4.4
1990
4.3 - j6.1
1.1 - j4.3
Zload
Ω
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
source
Z
load
Figure 9. Series Equivalent Source and Load Impedance
MRF19090R3 MRF19090SR3
6
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
B
4
G
2X
1
Q
bbb
M
T A
B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. RECOMMENDED BOLT CENTER DIMENSION OF
1.16 (29.57) BASED ON M3 SCREW.
M
B
(FLANGE)
3
K
2
bbb
M
D
T A
B
M
M
M
bbb
M
T A
M
B
M
ccc
M
T A
M
B
M
N
R
(INSULATOR)
ccc
M
T A
M
aaa
M
T A
M
B
S
(LID)
B
(LID)
M
(INSULATOR)
M
H
C
F
E
T
A
A
SEATING
PLANE
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
1.335
1.345
0.535
0.545
0.147
0.200
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.175
0.205
0.872
0.888
0.871
0.889
.118
.138
0.515
0.525
0.515
0.525
0.007 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
33.91
34.16
13.6
13.8
3.73
5.08
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.44
5.21
22.15
22.55
19.30
22.60
3.00
3.51
13.10
13.30
13.10
13.30
0.178 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
(FLANGE)
CASE 465B - 03
ISSUE D
NI - 880
MRF19090R3
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
1
B
(FLANGE)
K
2
bbb
M
D
T A
M
B
M
M
bbb
M
T A
M
B
ccc
M
T A
M
B
ccc
M
N
R
(INSULATOR)
M
T A
M
B
M
S
(LID)
aaa
M
T A
M
B
(LID)
M
(INSULATOR)
M
H
C
F
E
T
A
A
(FLANGE)
DIM
A
B
C
D
E
F
H
K
M
N
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
0.905
0.915
0.535
0.545
0.147
0.200
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.872
0.888
0.871
0.889
0.515
0.525
0.515
0.525
0.007 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
22.99
23.24
13.60
13.80
3.73
5.08
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
22.15
22.55
19.30
22.60
13.10
13.30
13.10
13.30
0.178 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
SEATING
PLANE
CASE 465C - 02
ISSUE D
NI - 880S
MRF19090SR3
MRF19090R3 MRF19090SR3
RF Device Data
Freescale Semiconductor
7
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© Freescale Semiconductor, Inc. 2006. All rights reserved.
MRF19090R3 MRF19090SR3
Document Number: MRF19090
8Rev. 6, 5/2006
RF Device Data
Freescale Semiconductor
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