AOL1414 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1414 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 6.5mΩ (VGS = 10V) RDS(ON) < 7.5mΩ (VGS = 4.5V) -RoHS Compliant -Halogen and Antimony Free Green Device* UIS Tested Rg,Ciss,Coss,Crss Tested Ultra SO-8TM Top View D D Bottom tab connected to drain G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current B Pulsed Drain Current Avalanche Current C C Repetitive avalanche energy L=0.3mH TC=25°C 70 IDM 200 Junction and Storage Temperature Range Maximum Junction-to-Case C 11 IAR 30 A EAR 135 mJ 100 2.08 -55 to 175 Symbol Alpha & Omega Semiconductor, Ltd. W 1.3 TJ, TSTG t ≤ 10s Steady-State Steady-State W 50 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A A IDSM PD TC=100°C TA=25°C Power Dissipation V 14 TA=70°C A ±12 ID TA=25°C Power Dissipation B Units V 85 TC=100°C Continuous Drain Current G Maximum 30 RθJA RθJC Typ 14.4 37 1 °C Max 25 60 1.5 Units °C/W °C/W °C/W www.aosmd.com AOL1414 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Typ V 1 TJ=55°C 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±12V Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 100 100 VGS=10V, ID=20A 1.5 6.5 6.9 8.3 7.5 VGS=4.5V, ID=20A 6 gFS Forward Transconductance VDS=5V, ID=20A 90 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current 0.74 DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 2100 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge VGS=4.5V, VDS=15V, ID=20A V mΩ mΩ S 1 V 85 A 2520 536 0.5 nA 2 4.9 Static Drain-Source On-Resistance TJ=125°C µA A RDS(ON) Output Capacitance Units 30 VDS=30V, VGS=0V VGS(th) Coss Max pF pF 165 231 pF 0.95 1.5 Ω 19.7 24 nC 3.6 4.6 nC Qgs Gate Source Charge Qgd Gate Drain Charge 7.9 tD(on) Turn-On DelayTime 5.9 10 ns tr Turn-On Rise Time 11 17 ns tD(off) Turn-Off DelayTime 36.2 55 ns tf Turn-Off Fall Time 12 18 ns ns nC VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω nC trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs 35 42 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 33 50 A: The value of RθJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. TC=25°C Continuous Drain Current E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. C F. These curves are basedTon the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, C=100° assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. * This device is guaranteed green after date code 8P11 (June 1ST 2008) Rev 5: May 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1414 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 60 10V 3.5V 50 50 VDS=5V 3V 40 40 ID(A) ID (A) 125°C 30 30 20 25°C 20 VGS=2.5V 10 10 0 0 0 1 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics 5 7 1 1.5 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics 3.5 1.8 ID=20A Normalized On-Resistance 6.5 VGS=4.5V RDS(ON) (mΩ ) VGS=10V 1.6 6 1.4 5.5 5 VGS=4.5V 1.2 VGS=10V 4.5 4 1 0.8 0 10 20 30 40 50 60 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature Continuous Drain Current TC=25°C 20 1.0E+02 TC=100°C 1.0E+01 16 125°C 1.0E+00 IS (A) ID=20A RDS(ON) (mΩ ) 25 12 1.0E-01 25°C 1.0E-02 125°C 1.0E-03 8 25°C 1.0E-04 1.0E-05 4 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 www.aosmd.com AOL1414 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3500 5 VDS=15V ID=20A 3000 Capacitance (pF) VGS (Volts) 4 3 2 2500 Ciss 2000 1500 Coss 1000 1 Crss 500 0 0 0 5 10 15 20 25 0 Qg (nC) Figure 7: Gate-Charge Characteristics 1000 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 250 10µs RDS(ON) limited 1ms 100µs DC 10 TJ(Max)=175°C TC=25°C 1 TJ(Max)=175°C TC=25°C 210 Power (W) 100 ID (Amps) 5 170 130 90 50 0.1 0.0001 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Continuous Drain Current TC=25°C Zθ JC Normalized Transient Thermal Resistance 10 T =100°C C D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJC=1.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1414 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 TA=25°C 80 Power Dissipation (W) ID(A), Peak Avalanche Current 100 60 40 20 0 90 60 30 0 0.00001 0.0001 0.001 0.01 0 25 50 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note B) 100 100 80 80 Power (W) Current rating ID(A) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 60 40 60 40 20 20 0 0 0 25 50 75 100 125 150 0.01 175 TCASE (°C) Figure 14: Current De-rating (Note B) 0.1 1 10 100 1000 10000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) Continuous Drain Current TC=25°C Zθ JA Normalized Transient Thermal Resistance 10 1 D=TonT/T C=100°C TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 PD 0.001 Ton T Single Pulse 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1414 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd L Vgs Ig Alpha & Omega Semiconductor, Ltd. Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.aosmd.com