Freescale MRF9030NR1 Rf power field effect transistor Datasheet

Freescale Semiconductor
Technical Data
Document Number: MRF9030N
Rev. 10, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
MRF9030NR1
MRF9030NBR1
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these
devices make them ideal for large-signal, common-source amplifier applications
in 26 volt base station equipment.
945 MHz, 30 W, 26 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFETs
• Typical Performance at 945 MHz, 26 Volts
Output Power — 30 Watts PEP
Power Gain — 20 dB
Efficiency — 41% (Two Tones)
IMD — - 31 dBc
• Integrated ESD Protection
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW
Output Power
Features
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Dual - Lead Boltdown Plastic Package Can Also Be Used As Surface
Mount.
• 200_C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• TO - 272 - 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
13 inch Reel.
• TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
CASE 1265 - 08, STYLE 1
TO - 270- 2
PLASTIC
MRF9030NR1
CASE 1337 - 03, STYLE 1
TO - 272- 2
PLASTIC
MRF9030NBR1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain- Source Voltage
Rating
VDSS
- 0.5, +65
Vdc
Gate- Source Voltage
VGS
- 0.5, + 15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
139
0.93
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value (1)
Unit
RθJC
1.08
°C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M2 (Minimum)
Charge Device Model
MRF9030NR1
MRF9030NBR1
C7 (Minimum)
C6 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
3
260
°C
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF9030NR1 MRF9030NBR1
1
Table 5. Electrical Characteristics (Tc = 25°c Unless Otherwise Noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 μAdc)
VGS(th)
2
2.9
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 250 mAdc)
VGS(Q)
3
3.8
5
Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 0.7 Adc)
VDS(on)
—
0.23
0.4
Vdc
gfs
—
2.7
—
S
Input Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Ciss
—
49
—
pF
Output Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
27
—
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
1.2
—
pF
Two - Tone Common - Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
Gps
18
20
—
dB
Two - Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
η
37
41
—
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IMD
—
- 31
- 28
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IRL
—
- 13
-9
dB
Two - Tone Common - Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
Gps
—
20
—
dB
Two - Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
η
—
40.5
—
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
IMD
—
- 31
—
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
IRL
—
- 12
—
dB
Off Characteristics
On Characteristics
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture)
MRF9030NR1 MRF9030NBR1
2
RF Device Data
Freescale Semiconductor
B2
B1
VDD
VGG
+
C8
RF
INPUT
C7
L1
L2
C5
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z10
Z9
C15
+
+
+
C16
C17
C18
C9
DUT Z11
Z12 Z13
Z14
Z15
Z16
Z17
Z18
RF
OUTPUT
C14
C1
C2
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
C3
C4
C6
0.260″ x 0.060″ Microstrip
0.240″ x 0.060″ Microstrip
0.500″ x 0.100″ Microstrip
0.200″ x 0.270″ Microstrip
0.330″ x 0.270″ Microstrip
0.140″ x 0.270″ x 0.520″, Taper
0.040″ x 0.520″ Microstrip
0.090″ x 0.520″ Microstrip
0.370″ x 0.520″ Microstrip (MRF9030NR1)
0.290″ x 0.520″ Microstrip (MRF9030NBR1)
0.130″ x 0.520″ Microstrip (MRF9030NR1)
0.210″ x 0.520″ Microstrip (MRF9030NBR1)
C10
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z18
Board
C11
C12
C13
0.360″ x 0.270″ Microstrip
0.050″ x 0.270″ Microstrip
0.110″ x 0.060″ Microstrip
0.220″ x 0.060″ Microstrip
0.100″ x 0.060″ Microstrip
0.870″ x 0.060″ Microstrip
0.240″ x 0.060″ Microstrip
0.340″ x 0.060″ Microstrip
Taconic RF - 35- 0300, εr = 3.5
Figure 1. 930 - 960 MHz Broadband Test Circuit Schematic
Table 6. 930 - 960 MHz Broadband Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Short Ferrite Bead, Surface Mount
95F786
Newark
B2
Long Ferrite Bead, Surface Mount
95F787
Newark
C1, C7, C14, C15
47 pF Chip Capacitors
100B470JP 500X
ATC
C2
0.6- 4.5 Variable Capacitor, Gigatrim
44F3360
Newark
C3, C11
3.9 pF Chip Capacitors
100B3R6BP 500X
ATC
C4, C12
0.8- 8.0 Variable Capacitors, Gigatrim
44F3360
Newark
C5, C6
6.8 pF Chip Capacitors
100B7R5JP 500X
ATC
C8, C16, C17
10 μF, 35 V Tantulum Chip Capacitors
93F2975
Newark
C9, C10
10 pF Chip Capacitors
100B100JP 500X
ATC
C13
1.8 pF Chip Capacitor (MRF9030NR1)
0.6- 4.5 Variable Capacitor, Gigatrim (MRF9030NBR1)
100B1R8BP
44F3360
ATC
Newark
C18
220 μF Electrolytic Chip Capacitor
14F185
Newark
L1, L2
12.5 nH Coilcraft Inductors
A04T- 5
Coilcraft
WB1, WB2
20 mil Brass Shim (0.250 x 0.250)
RF - Design Lab
RF - Design Lab
PCB
Etched Circuit Board
900 MHz μ250/Viper Rev 02
DSelectronics
MRF9030NR1 MRF9030NBR1
RF Device Data
Freescale Semiconductor
3
C18
C8
VGG
B1
VDD
B2
C7
C16 C17
C15
C1
L1
C2
C5
C14
L2
CUT OUT AREA
C4 WB1
C3
C6
C9
WB2
C10
C11
C12
C13
900 MHz
Rev 02
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. 930 - 960 MHz Broadband Test Circuit Component Layout (MRF9030NR1)
C18
C8
VGG
B2 VDD
B1
C7
C15
L1
C2
WB1
C3
C4 C6
WB2
CUT OUT AREA
C1
C5
C16 C17
L2
C9
C14
C10
C11
C12
C13
MRF9030M
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 3. 930 - 960 MHz Broadband Test Circuit Component Layout (MRF9030NBR1)
MRF9030NR1 MRF9030NBR1
4
RF Device Data
Freescale Semiconductor
G ps , POWER GAIN (dB)
21
45
Gps
20
40
η
19
35
18
−30
IMD
17
−32
IRL
16
VDD = 26 Vdc
Pout = 30 W (PEP)
IDQ = 250 mA
Two−Tone, 100 kHz Tone Spacing
15
14
930
935
940
945
950
955
−34
−36
−38
960
−10
−12
−14
−16
IRL, INPUT RETURN
LOSS (dB)
50
IMD, INTERMODULATION
DISTORTION (dBc)
22
h , DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
−18
f, FREQUENCY (MHz)
Figure 4. Class AB Broadband Circuit Performance
20.5
300 mA
20
250 mA
19.5
VDD = 26 Vdc
f1 = 945 MHz
f2 = 945.1 MHz
200 mA
19
IMD, INTERMODULATION DISTORTION (dBc)
18.5
0.1
−15
−20
−25
−30
−35
IDQ = 200 mA
−40
300 mA
−45
−50
250 mA
−55
1
10
100
0.1
VDD = 26 Vdc
375 mA f1 = 945 MHz
f2 = 945.1 MHz
1
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Power Gain versus Output Power
Figure 6. Intermodulation Distortion versus
Output Power
−10
22
VDD = 26 Vdc
IDQ = 250 mA
f1 = 945 MHz
f2 = 945.1 MHz
−20
−30
20
3rd Order
−40
−50
5th Order
−60
7th Order
1
10
100
60
Gps
50
18
40
16
30
14
20
12
−70
−80
0.1
100
10
Pout, OUTPUT POWER (WATTS) PEP
10
0.1
VDD = 26 Vdc
IDQ = 250 mA
f = 945 MHz
η
1
10
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Intermodulation Distortion Products
versus Output Power
Figure 8. Power Gain and Efficiency versus
Output Power
η, DRAIN EFFICIENCY (%)
IDQ = 375 mA
G ps , POWER GAIN (dB)
G ps , POWER GAIN (dB)
21
IMD, INTERMODULATION DISTORTION (dBc)
21.5
10
0
100
MRF9030NR1 MRF9030NBR1
RF Device Data
Freescale Semiconductor
5
22
G ps , POWER GAIN (dB)
20
60
Gps
40
20
18
VDD = 26 Vdc
IDQ = 250 mA
f1 = 945 MHz
f2 = 945.1 MHz
η
16
0
14
12
10
0.1
−20
−40
IMD
1
10
η, DRAIN EFFICIENCY (%)
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
−60
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 9. Power Gain, Efficiency and IMD
versus Output Power
MTTF FACTOR (HOURS X AMPS2)
1010
109
108
107
90 100 110 120 130 140 150 160 170 180 190 200 210
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 10. MTTF Factor versus Junction Temperature
MRF9030NR1 MRF9030NBR1
6
RF Device Data
Freescale Semiconductor
Zo = 5 Ω
Zsource
f = 930 MHz
Zload
f = 960 MHz
f = 960 MHz
f = 930 MHz
VDD = 26 V, IDQ = 250 mA, Pout = 30 Watts (PEP)
f
MHz
Zload
Ω
Zsource
Ω
930
1.07 + j0.160
3.53 - j0.20
945
1.14 + j0.385
3.41 - j0.24
960
1.17 + j0.170
3.60 - j0.17
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
Note:
= Test circuit impedance as measured
from drain to ground.
Zload was chosen based on tradeoffs between gain, output
power, drain efficiency and intermodulation distortion.
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
source
Z
load
Figure 11. Series Equivalent Source and Load Impedance (MRF9030NR1)
MRF9030NR1 MRF9030NBR1
RF Device Data
Freescale Semiconductor
7
Zo = 5 Ω
Zload
Zsource
f = 960 MHz
f = 960 MHz
f = 930 MHz
f = 930 MHz
VDD = 26 V, IDQ = 250 mA, Pout = 30 Watts (PEP)
Zload
Ω
f
MHz
Zsource
Ω
930
1.0 - j0.18
3.05 - j0.09
945
1.0 - j0.10
3.00 - j0.07
960
1.0 - j0.03
2.95 - j0.03
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
Note:
= Test circuit impedance as measured
from drain to ground.
Zload was chosen based on tradeoffs between gain, output
power, drain efficiency and intermodulation distortion.
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
source
Z
load
Figure 12. Series Equivalent Source and Load Impedance (MRF9030NBR1)
MRF9030NR1 MRF9030NBR1
8
RF Device Data
Freescale Semiconductor
NOTES
MRF9030NR1 MRF9030NBR1
RF Device Data
Freescale Semiconductor
9
NOTES
MRF9030NR1 MRF9030NBR1
10
RF Device Data
Freescale Semiconductor
NOTES
MRF9030NR1 MRF9030NBR1
RF Device Data
Freescale Semiconductor
11
PACKAGE DIMENSIONS
MRF9030NR1 MRF9030NBR1
12
RF Device Data
Freescale Semiconductor
MRF9030NR1 MRF9030NBR1
RF Device Data
Freescale Semiconductor
13
MRF9030NR1 MRF9030NBR1
14
RF Device Data
Freescale Semiconductor
2X
aaa
M
A
E1
B
r1
C A B
GATE
LEAD
D1
2X
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
DRAIN
LEAD
b1
aaa
M
D
C A
2
E
DRAIN ID
PIN 3
1
NOTE 8
E2
VIEW Y - Y
c1
H
F
ZONE "J"
DATUM
PLANE
A
A1
A2
7
E2
Y
Y
C
SEATING
PLANE
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
CASE 1337 - 03
ISSUE C
TO - 272 - 2
PLASTIC
MRF9030NBR1
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DATUM PLANE −H− IS LOCATED AT THE TOP OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE TOP OF THE PARTING LINE.
4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE −H−.
5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE "b1" DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS −A− AND −B− TO BE DETERMINED AT
DATUM PLANE −H−.
7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY.
8. CROSSHATCHING REPRESENTS THE EXPOSED
AREA OF THE HEAT SLUG.
DIM
A
A1
A2
D
D1
E
E1
E2
F
b1
c1
r1
aaa
INCHES
MIN
MAX
.100
.104
.039
.043
.040
.042
.928
.932
.810 BSC
.438
.442
.248
.252
.241
.245
.025 BSC
.193
.199
.007
.011
.063
.068
.004
MILLIMETERS
MIN
MAX
2.54
2.64
0.99
1.09
1.02
1.07
23.57
23.67
20.57 BSC
11.12
11.23
6.30
6.40
6.12
6.22
0.64 BSC
5.05
4.90
.28
.18
1.73
1.60
.10
MRF9030NR1 MRF9030NBR1
RF Device Data
Freescale Semiconductor
15
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MRF9030NR1 MRF9030NBR1
Document Number: MRF9030N
Rev. 10, 5/2006
16
RF Device Data
Freescale Semiconductor
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