CHENYI MBR1060CT 10amp schottky barrier rectifier 30-60volt Datasheet

Shanghai Lunsure Electronic
Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
MBR1030CT
THRU
MBR1060CT
Features
•
•
•
•
Metal of siliconrectifier, majonty carrier conducton
Guard ring for transient protection
Low power loss high efficiency
High surge capacity, High current capability
10 Amp
Schottky Barrier
Rectifier
30-60 Volts
Maximum Ratings
•
•
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +175°C
Catalog
Number
MBR1030CT
MBR1035CT
MBR1040CT
MBR1045CT
MBR1050CT
MBR1060CT
:
Maximum
Recurrent
Peak
Reverse
Voltage
30V
35V
40V
45V
50V
60V
Device
Marking
MBR1030CT
MBR1035CT
MBR1040CT
MBR1045CT
MBR1050CT
MBR1060CT
TO-220AB
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
B
M
C
Peak Forward Surge
Current
Maximum Forward
Voltage Drop Per
Element
MBR1030CT-45CT
MBR1050CT-60CT
MBR1030CT-45CT
MBR1050CT-60CT
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Typical Junction
Capacitance
MBR1030CT-45CT
MBR1050CT-60CT
IF(AV)
10A
D
A
K
21V
24.5V
28V
31.5V
35V
42V
30V
35V
40V
45V
50V
60V
PIN
E
F
G
I
J
N
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
L
H H
TC = 105°C
PIN 1
IFSM
125A
8.3ms, half sine
IFM = 5A
TJ = 25°C
IFM = 5A
TJ = 125°C
VF
.70V
.80V
.57V
.65V
IR
0.1mA
15mA
TJ = 25°C
T J = 125°C
CJ
170pF
220pF
Measured at
1.0MHz, VR=4.0V
PIN 2
CASE
PIN 3
A
B
C
D
E
F
G
H
I
J
K
L
M
N
INCHES
.560
.625
.380
.420
.100
.135
.230
.270
.380
.420
-----.250
.500
.580
.090
.110
.020
.045
.012
.025
.139
.161
.140
.190
.045
.055
.080
.115
*Pulse test: Pulse width 300 µsec, Duty cycle 2%
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. cnelectr.com
MM
14.22
9.65
2.54
5.84
9.65
-----12.70
2.29
0.51
0.30
3.53
3.56
1.14
2.03
15.88
10.67
3.43
6.86
10.67
6.35
14.73
2.79
1.14
0.64
4.09
4.83
1.40
2.92
RATING AND CHARACTERISTIC CURVES
MBR1030CT thru MBR1060CT
12
8
4
0
RESISTIVE OR
INDUCTIVE LOAD
25
50
75
100
125
150
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD CURRENT
AMPERES
FIG.1 - FORWARD CURRENT DERATING CURVE
16
175
150
125
100
75
50
25
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
0
1
2
5
CASE TEMPERATURE , C
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
50
100
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
INSTANTANEOUS FORWARD CURRENT ,(A)
100
10
TJ = 125 C
1.0
0.1
0.01
TJ = 25 C
0.001
MBR1030CT ~ MBR1045CT
10
MBR1050CT ~ MBR1060CT
1.0
TJ = 25 C
PULSE WIDTH 300us
2% Duty cycle
0.1
0
20
40
60
80
100
140
120
0.1
0.2
0.3
0.4
0.5
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
MBR1030CT ~ MBR1045CT
100
MBR1050CT ~ MBR1060CT
TJ = 25 C, f= 1MHz
10
0.1
1
0.6
0.7
0.8
0.9
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%)
CAPACITANCE , (pF)
INSTANTANEOUS REVERSE CURRENT ,(mA)
20
10
NUMBER OF CYCLES AT 60Hz
4
10
100
REVERSE VOLTAGE , VOLTS
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