Rev 2.0 BSL307SP OptiMOS-P Small-Signal-Transistor Feature Product Summary • P-Channel VDS -30 V • Enhancement mode RDS(on) 43 mΩ • Logic Level ID -5.5 • 150°C operating temperature A PG-TSOP-6-1 • Avalanche rated • dv/dt rated 4 3 2 1 5 6 • Qualified according to AEC Q101 • Halogen free according to IEC61249221 Type Package Tape and reel BSL307SP PG-TSOP-6-1 H6327: 3000pcs/r. sPC Drain pin 1,2, 5,6 Gate pin 3 Marking Source pin 4 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TA=25°C -5.5 TA=70°C -4.4 ID puls -22 EAS 44 mJ dv/dt -6 kV/µs Gate source voltage VGS ±20 V Power dissipation Ptot 2 W -55... +150 °C Pulsed drain current TA=25°C Avalanche energy, single pulse ID =-5.5 A , VDD =-25V, RGS =25Ω Reverse diode dv/dt IS =-5.5A, VDS =24V, di/dt=200A/µs, Tjmax =150°C TA=25°C Tj , Tstg Operating and storage temperature 55/150/56 IEC climatic category; DIN IEC 68-1 ESD Class Class 1a JESD22-A114-HBM Page 1 2014-01-09 Rev 2.0 BSL307SP Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 50 - - 230 - - 62.5 Characteristics Thermal resistance, junction - soldering point RthJS SMD version, device on PCB: RthJA @ min. footprint @ 6 cm 2 cooling area 1) K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS -30 - - VGS(th) -1 -1.5 -2 Static Characteristics Drain-source breakdown voltage V VGS =0, ID=-250µA Gate threshold voltage, VGS = VDS ID =-40µA Zero gate voltage drain current µA IDSS VDS =-30V, VGS =0, Tj =25°C - -0.1 -1 VDS =-30V, VGS =0, Tj =150°C - -10 -100 IGSS - -10 -100 nA RDS(on) - 52 74 mΩ RDS(on) - 31 43 Gate-source leakage current VGS =-20V, VDS =0 Drain-source on-state resistance VGS =-4.5V, ID =-4.2A Drain-source on-state resistance VGS =-10V, ID =-5.5A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air; t ≤ 5 sec. Page 2 2014-01-09 Rev 2.0 BSL307SP Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 4.7 9.4 - S pF Dynamic Characteristics Transconductance gfs çVDS ç≥2*çIDç*RDS(on)max ID =-4.4A Input capacitance Ciss VGS =0, VDS =-25V, - 805 - Output capacitance Coss f=1MHz - 234 - Reverse transfer capacitance Crss - 195 - Turn-on delay time td(on) VDD =-15V, VGS =-10V, - 7.3 11 Rise time tr ID =-1A, RG=6Ω - 8.4 12.6 Turn-off delay time td(off) - 36.4 55 Fall time tf - 29 44 - -2 -2.5 - -8.2 -12.3 - -23.4 -29 V(plateau) VDD =-24V, ID =-5.5A - -2.8 - V IS - - -5.5 A - - -22 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =-24V, ID =-5.5A VDD =-24V, ID =-5.5A, nC VGS =0 to -10V Gate plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS =0, |IF | = |ID | - -0.88 -1.3 V Reverse recovery time trr VR =-15V, |IF | = |lD |, - 16.6 21 ns Reverse recovery charge Qrr diF /dt=100A/µs - 6.2 7.8 nC Page 3 2014-01-09 Rev 2.0 BSL307SP 1 Power dissipation 2 Drain current Ptot = f (TA ) ID = f (TA ) parameter: |VGS |≥ 10 V 2.2 BSL307SP -6 A W -5 1.8 -4.5 1.6 -4 1.4 ID Ptot BSL307SP -3.5 1.2 -3 1 -2.5 0.8 -2 0.6 -1.5 0.4 -1 0.2 -0.5 0 0 20 40 60 80 100 °C 120 0 0 160 20 40 60 80 100 120 TA 4 Transient thermal impedance ID = f ( VDS ) ZthJS = f (tp ) parameter : D = 0 , TA = 25 °C parameter : D = tp /T 2 BSL307SP 10 2 -10 1 R (o DS VD S tp = 90.0µs 100 µs n) 10 1 Z thJS = BSL307SP K/W /I D A 160 TA 3 Safe operating area -10 °C ID 1 ms -10 0 10 0 10 -1 10 ms D = 0.50 0.20 10 -2 0.10 0.05 -10 -1 0.02 DC 10 -3 0.01 single pulse -10 -2 -1 -10 -10 0 -10 1 V -10 2 VDS 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Page 4 2014-01-09 Rev 2.0 BSL307SP 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ); Tj=25°C RDS(on) = f (ID ) parameter: tp = 80 µs parameter: VGS 50 0.1 Vgs = -5.5V Vgs = -6V Ω Vgs = -5V A Vgs = -4.5V Vgs = -4V 0.08 30 RDS(on) Vgs = -7V Vgs = -8V Vgs = -10V - ID Vgs = -3.5V Vgs = -4.5V 0.07 0.06 0.05 20 0.04 Vgs = -4V 0.03 10 Vgs= - 3V Vgs = - 3.5V Vgs = - 4.5V Vgs= - 6V Vgs = - 10V 0.02 Vgs = -3.5V 0.01 Vgs = -3V 0 0 1 2 3 4 5 6 7 8 V 0 0 10 5 10 15 20 25 30 35 40 - V DS 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); |VDS |≥ 2 x |ID| x RDS(on)max gfs = f(ID); Tj=25°C parameter: tp = 80 µs parameter: tp = 80 µs 20 50 15 S g fs A - ID A - ID 12 10 7.5 8 5 4 2.5 0 0 1 2 3 V 5 - V GS 0 0 5 10 A 20 - ID Page 5 2014-01-09 Rev 2.0 BSL307SP 9 Drain-source on-resistance 10 Typ. gate threshold voltage RDS(on) = f(Tj ) VGS(th) = f (Tj) parameter: ID = -5.5 A, VGS = -10 V parameter: VGS = VDS 2.4 60 V mΩ - VGS(th) RDS(on) 2 50 45 1.8 98% 1.6 98% 1.4 40 typ. 1.2 35 1 30 typ. 0.8 25 20 -60 2% 0.6 -20 20 60 100 °C 0.4 -60 160 -20 20 60 100 Tj °C 160 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD ) parameter: VGS =0, f=1 MHz parameter: Tj , tp = 80 µs 10 4 -10 2 BSL307SP A pF C IF -10 1 Ciss 10 3 -10 0 Tj = 25 °C typ Coss Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) Crss 10 2 0 5 10 15 20 V 30 - VDS -10 -1 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3 VSD Page 6 2014-01-09 Rev 2.0 BSL307SP 13 Typ. avalanche energy 14 Typ. gate charge EAS = f (Tj ), par.: ID = -5.5 A |VGS| = f (QGate ) VDD = -25 V, RGS = 25 Ω parameter: ID = -5.5 A pulsed 45 18 mJ V 14 - VGS E AS 35 30 12 25 10 20 8 15 6 10 4 5 2 0 25 50 75 100 °C 150 Tj 0 0 0.2 VDS max. 0.5 VDS max. 0.8 VDS max. 5 10 15 20 25 nC 35 |QGate| 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) -36 V (BR)DSS V -34 -33 -32 -31 -30 -29 -28 -27 -60 -20 20 60 100 °C 180 Tj Page 7 2014-01-09 Rev 2.0 Package Outline: BSL307SP TSOP6 2.9 ±0.2 (2.25) 1.1 MAX. B 0.1 MAX. 1 2 3 0.35 +0.1 -0.05 0.2 M B 6x 0.15 +0.1 -0.06 0.95 0.2 1.9 M 1.6 ±0.1 4 10˚ MAX. 5 2.5 ±0.1 6 0.25 ±0.1 10˚ MAX. (0.35) A A GPX09300 Footprint: Packaging: 0.5 0.2 2.7 8 2.9 1.9 4 0.95 Remark: Wave soldering possible dep. on customers process conditions Pin 1 marking 3.15 1.15 CPWG5899 HLG09283 Dimensions in mm Page 8 2014-01-09 Rev 2.0 BSS308PE BSL307SP Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 9 2014-01-09