ACE ACE8202B Dual n-channel enhancement mode field effect transistor with esd protection Datasheet

ACE8202B
Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection
Description
The ACE8202B uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
They offer operation over a wide gate drive range from 2.5V to 12V. It is ESD protected. This device is
suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain
configuration.
Features





VDS(V)=20V
ID=7.5A (VGS=4.5V)
RDS(ON)<21 mΩ (VGS=4.5V)
RDS(ON)<35 mΩ (VGS=2.5V)
ESD Protected: 2000V
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±12
V
Continuous Drain Current *AC
TA=25℃
TA=70℃
Pulsed Drain Current
Power Dissipation
ID
IDM
TA=25℃
TA=70℃
PD
7.5
6
25
2.5
1.6
Operating Junction Temperature / Storage Temperature Range TJ/TSTG -55/150
A
A
W
O
C
Packaging Type
DFN3*3-8L
VER 1.2
1
ACE8202B
Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection
Ordering information
ACE8202B XX + H
Halogen - free
Pb - free
NN : DFN3*3-8L
Electrical Characteristics
TA=25℃, unless otherwise noted.
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS=0V, ID=250 uA
20
Gate Threshold Voltage
VGS(th)
VDS=VGS, IDS=250uA
0.4
Gate Leakage Current
IGSS
VDS=0V,VGS=±12V
Zero Gate Voltage Drain Current
IDSS
VDS=20V, VGS=0V
Maximum Body-Diode
Continuous Current
IS
Drain-Source On-Resistance
RDS(ON)
Forward Transconductance
Diode Forward Voltage
V
0.65
1
6.5
10
uA
1
uA
2.5
A
VGS=4.5V, ID=8A
15.7
21
VGS=2.5V, ID=7A
26
35
gfs
VDS=5V,ID=7A
34
VSD
ISD=2.5A, VGS=0V
0.77
mΩ
S
1
V
Switching
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
3.2
td(on)
300
Turn-On Time
Turn-Off Time
tr
td(off)
11
VDS=10V, VGS=4.5V, ID=7A
VGS=5V, RL=2.5Ω, VDS=10V,
RGEN=3Ω
tf
2
nC
600
nS
790
440
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
REVERSE Transfer Capacitance
Crss
920
VGS=0V, VDS=10V, f=1MHz
155
pF
75
VER 1.2
2
ACE8202B
Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection
Note:
1. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤
10s thermal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient .
4. The static characteristics are obtained using <300 μs pulses, duty cycle 0.5% max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C. The SOA curve provides a single pulse rating.
Typical Performance Characteristics
VER 1.2
3
ACE8202B
Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection
Typical Performance Characteristics
VER 1.2
4
ACE8202B
Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection
Typical Performance Characteristics
VER 1.2
5
ACE8202B
Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection
Packing Information
DFN3*3-8L
VER 1.2
6
ACE8202B
Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.2
7
Similar pages