Infineon BAR80 Silicon rf switching diode Datasheet

BAR80
Silicon RF Switching Diode
3
Design for use in shunt configuration
4
High shunt signal isolation
Low shunt insertion loss
2
1
VSO05553
Type
Marking
BAR80
AAs
Pin Configuration
1=C
2=A
3=C
Package
4=A
MW-4
Maximum Ratings
Parameter
Symbol
Diode reverse voltage
VR
35
V
Forward current
IF
100
mA
Junction temperature
Tj
150
°C
Operating temperature range
Top
-55 ... 125
Storage temperature
Tstg
-55 ... 150
1
Value
Unit
Aug-17-2001
BAR80
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
IR
-
-
20
nA
VF
0.8
-
1
V
DC characteristics
Reverse current
VR = 20 V
Forward voltage
IF = 100 mA
AC characteristics
Diode capacitance
pF
CT
VR = 1 V, f = 1 MHz
-
1
1.6
VR = 3 V, f = 1 MHz
0.6
0.92
1.3
rf
-
0.5
0.7
Ls
-
0.14
-
nH
Shunt signal isolation
SI
-
23
-
dB
Shunt insertion loss
IL
-
0.15
-
Forward resistance
IF = 5 mA, f = 100 MHz
Series inductance chip to ground
Application information
IF = 10 mA, f = 2 GHz, RG=RL =50
VR = 5 V, f = 2 GHz, RG=RL =50
Configuration of the shunt-diode
- A perfect ground is essential for optimum isolation
- The anode pins should be used as passage for RF
2
Aug-17-2001
BAR80
Forward current IF = f (TS )
160
mA
IF
120
100
80
60
40
20
0
0
20
40
60
80
120 °C
100
150
TS
Permissible Pulse Load
Permissible Pulse Load RthJS = f(tp )
IFmax / IFDC = f(tp)
10 2
10 3
IFmax / IFDC
RthJS
K/W
10 2
-
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 1
10 0 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
10 0 -7
10
0
tp
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
3
Aug-17-2001
BAR80
Forward resistance rf = f (IF )
Diode capacitance CT = f (VR)
f = 1MHz
f = 100MHz
EHD07010
10 1
rf
CT
Ω
EHD07009
2.0
pF
1.6
1.2
10 0
0.8
0.4
10 -1
10 -1
10 0
10 1
mA
0.0
10 2
ΙF
0
10
20
V
30
VR
4
Aug-17-2001
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