Infineon AUIRFS3107-7P Advanced process technology Datasheet

AUTOMOTIVE GRADE
AUIRFS3107-7P
HEXFET® Power MOSFET
Features
 Advanced Process Technology
 Ultra Low On-Resistance
 Enhanced dV/dT and dI/dT capability
 175°C Operating Temperature
 Fast Switching
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
 Automotive Qualified *
VDSS
RDS(on) typ.
max.
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications.
Base Part Number
Package Type
AUIRFS3107-7P
D2Pak 7 Pin
75V
2.1m
ID (Silicon Limited)
2.6m
260A
ID (Package Limited)
240A
D2Pak 7 Pin
AUIRFS3107-7P
G
D
S
Gate
Drain
Source
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRFS3107-7P
AUIRFS3107-7PTRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
190
240
IDM
PD @TC = 25°C
Pulsed Drain Current 
Maximum Power Dissipation
1060
370
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited) 
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery 
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Symbol
RJC
RJA
Parameter
Junction-to-Case 
Junction-to-Ambient 
Units
260
A
W
2.5
± 20
320
See Fig.14,15, 22a, 22b
13
-55 to + 175
W/°C
V
mJ
A
mJ
V/ns
°C
300
Typ.
Max.
Units
–––
–––
0.40
40
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
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AUIRFS3107-7P
Static @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
Min.
75
Typ. Max. Units
–––
–––
V
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
RDS(on)
Static Drain-to-Source On-Resistance
–––
2.1
2.6
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
RG
Forward Trans conductance
Gate Resistance
IDSS
Drain-to-Source Leakage Current
260
–––
–––
–––
2.1
–––
–––
–––
20
–––
–––
250
S VDS = 25V, ID = 160A

VDS = 75V, VGS = 0V
µA
VDS = 75V,VGS = 0V,TJ =125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
–––
–––
100
-100
0.083 –––
V/°C Reference to 25°C, ID = 5mA 
m VGS = 10V, ID = 160A 
nA
VDS = VGS, ID = 250µA
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
160
38
57
103
17
80
100
64
9200
850
240
–––
–––
–––
–––
–––
–––
–––
–––
–––
Crss
Reverse Transfer Capacitance
–––
400
–––
Coss eff.(ER)
Effective Output Capacitance (Energy Related)
–––
1150
–––
VDD = 49V
ID = 160A
ns
RG= 2.7
VGS = 10V
VGS = 0V
VDS = 50V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 60V
Coss eff.(TR)
Effective Output Capacitance (Time Related)
–––
1500
–––
VGS = 0V, VDS = 0V to 60V
Min.
Typ. Max. Units
–––
––– 260
–––
–––
1060
–––
–––
–––
–––
–––
–––
–––
52
63
110
160
3.8
1.3
–––
–––
–––
–––
–––
Diode Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
ID = 160A
VDS = 38V
nC
VGS = 10V
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V TJ = 25°C,IS = 160A,VGS = 0V 
TJ = 25°C
VDD = 64V
ns
TJ = 125°C
IF = 160A,
TJ = 25°C di/dt = 100A/µs 
nC
TJ = 125°C
A TJ = 25°C 
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 240A. Note that
current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
 Repetitive rating; pulse width limited by max. junction temperature.
 Limited by TJmax, starting TJ = 25°C, L = 0.026mH, RG = 25, IAS = 160A, VGS =10V. Part not recommended for use above this value.
 ISD 160A, di/dt 1420A/µs, VDD V(BR)DSS, TJ  175°C.
 Pulse width 400µs; duty cycle  2%.
 Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
 Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
 When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
 R is measured at TJ approximately 90°C.
RJC value shown is at time zero
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AUIRFS3107-7P
1000
1000
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
100
BOTTOM
4.5V
100
4.5V
60µs PULSE WIDTH
60µs PULSE WIDTH
Tj = 25°C
10
Tj = 175°C
10
0.1
1
10
100
0.1
V DS, Drain-to-Source Voltage (V)
Fig. 2 Typical Output Characteristics
T J = 175°C
T J = 25°C
10
1
VDS = 25V
60µs PULSE WIDTH
2
3
4
5
6
7
ID = 160A
VGS = 10V
2.0
(Normalized)
R DS(on) , Drain-to-Source On Resistance
100
1.5
1.0
0.5
0.1
-60 -40 -20 0 20 40 60 80 100 120 140160 180
8
T J , Junction Temperature (°C)
VGS , Gate-to-Source Voltage (V)
Fig. 4 Normalized On-Resistance vs. Temperature
Fig. 3 Typical Transfer Characteristics
100000
14.0
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
VGS , Gate-to-Source Voltage (V)
ID= 160A
Coss = Cds + Cgd
C, Capacitance (pF)
100
2.5
1000
C iss
10000
Coss
Crss
1000
100
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3
10
V DS, Drain-to-Source Voltage (V)
Fig. 1 Typical Output Characteristics
ID, Drain-to-Source Current (A)
1
12.0
VDS = 60V
VDS = 38V
10.0
8.0
6.0
4.0
2.0
0.0
0
25
50
75 100 125 150 175 200 225
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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AUIRFS3107-7P
10000
T J = 175°C
100
T J = 25°C
10
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
1
100µsec
100
10msec
1msec
10
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
0.1
0.1
0.0
0.5
1.0
1.5
2.0
1
VSD , Source-to-Drain Voltage (V)
300
Limited By Package
ID, Drain Current (A)
250
200
150
100
50
0
50
75
100
125
150
Id = 5mA
90
85
80
75
70
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
175
T J , Temperature ( °C )
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10. Drain-to-Source Breakdown Voltage
1400
EAS , Single Pulse Avalanche Energy (mJ)
3.5
3.0
ID
TOP
28A
50A
BOTTOM 160A
1200
2.5
Energy (µJ)
1000
95
T C , Case Temperature (°C)
1000
2.0
1.5
1.0
0.5
0.0
-10
0
10
20
30
40
50
60
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
4
100
Fig 8. Maximum Safe Operating Area
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
25
10
VDS , Drain-to-Source Voltage (V)
70
80
800
600
400
200
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. Drain Current
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AUIRFS3107-7P
Thermal Response ( Z thJC ) °C/W
1
D = 0.50
0.1
0.20
0.10
J
0.05
0.01
0.02
0.01
R1
R1
J
1
R2
R2
R3
R3
C
2
1
2
3
3
4
C
4
Ci= iRi
Ci= iRi
1E-005
I (sec)
0.01083
0.00001
0.05878
0.000086
0.15777
0.001565
0.17478
0.011192
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
Ri (°C/W)
R4
R4
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming  Tj = 150°C and
Tstart =25°C (Single Pulse)
0.01
0.05
10
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming  j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Avalanche Current vs. Pulse width
350
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 160A
EAR , Avalanche Energy (mJ)
300
250
200
150
100
50
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 15. Maximum Avalanche Energy vs. Temperature
5
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 18a, 18b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 13, 14).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
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AUIRFS3107-7P
30
4.0
3.5
3.0
IRR (A)
VGS(th) , Gate threshold Voltage (V)
4.5
ID = 250µA
ID = 1.0mA
2.5
20
TJ = 25°C
TJ = 125°C
15
10
ID = 1.0A
2.0
25
IF = 106A
V R = 64V
5
1.5
0
1.0
-75 -50 -25
0
0
25 50 75 100 125 150 175
200
Fig 16. Threshold Voltage vs. Temperature
20
TJ = 25°C
TJ = 125°C
800
1000
1000
IF = 106A
VR = 64V
900
800
TJ = 25°C
TJ = 125°C
700
QRR (nC)
IRR (A)
25
600
Fig. 17 - Typical Recovery Current vs. dif/dt
30
IF = 160A
V R = 64V
400
diF /dt (A/µs)
T J , Temperature ( °C )
15
10
600
500
400
300
5
200
0
0
200
400
600
800
100
1000
0
200
diF /dt (A/µs)
400
600
800
1000
diF /dt (A/µs)
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig. 19 - Typical Stored Charge vs. dif/dt
1000
IF = 160A
VR = 64V
900
TJ = 25°C
TJ = 125°C
QRR (nC)
800
700
600
500
400
300
200
0
200
400
600
800
1000
diF /dt (A/µs)
Fig. 20 - Typical Stored Charge vs. dif/dt
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AUIRFS3107-7P
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V(BR)DSS
15V
tp
L
VDS
D.U.T
RG
IAS
20V
tp
DRIVER
+
V
- DD
A
0.01
Fig 22a. Unclamped Inductive Test Circuit
Fig 23a. Switching Time Test Circuit
I AS
Fig 22b. Unclamped Inductive Waveforms
Fig 23b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2
Fig 24a. Gate Charge Test Circuit
7
Qgd
Qgodr
Fig 24b. Gate Charge Waveform
2015-10-20
AUIRFS3107-7P
D2Pak - 7 Pin Package Outline (Dimensions are shown in millimeters (inches))
D2Pak - 7 Pin Part Marking Information
Part Number
AUFS3107-7P
YWWA
IR Logo
XX

Date Code
Y= Year
WW= Work Week
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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AUIRFS3107-7P
D2Pak - 7 Pin Tape and Reel
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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2015-10-20
AUIRFS3107-7P
Qualification Information
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Qualification Level
Moisture Sensitivity Level
D2-Pak 7 Pin
Machine Model
Human Body Model
ESD
Charged Device Model
RoHS Compliant
MSL1
Class M4 (+/- 800V)†
AEC-Q101-002
Class H3A (+/- 6000V)†
AEC-Q101-001
Class C5 (+/- 2000V)†
AEC-Q101-005
Yes
† Highest passing voltage.
Revision History
Date
10/20/2015
Comments


Updated datasheet with corporate template
Corrected ordering table on page 1.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
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Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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