Infineon BAR90-098LRH Optimized for low bias current antenna switches in hand held application Datasheet

BAR90...
Silicon Deep Trench PIN Diodes
• Optimized for low bias current antenna
switches in hand held applications
• Very low capacitance at zero volt
reverse bias at frequencies
above 1GHz (typ. 0.19 pF)
• Low forward resistance
(typ. 1.3 Ω @ I F = 3 mA)
• Improved ON / OFF mode harmonic
distortion balance
• Pb-free (RoHS compliant) package
BAR90-02EL
BAR90-02ELS
BAR90-098LRH
4
1
2
3
D2
D1
1
Type
BAR90-02ELS
BAR90-02EL
BAR90-098LRH
2
Package
TSSLP-2-3
TSLP-2-19
TSLP-4-7
Configuration
single, leadless
single, leadless
anti-parallel pair, leadless
LS(nH)
0.2
0.4
0.4
Marking
J*
X
T9
* Marking of TSSLP-2-3 with underline
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
VR
80
V
Forward current
IF
100
mA
Total power dissipation
Ptot
Value
mW
TS ≤ 137 °C, BAR90-02ELS
150
TS ≤ 133°C, all others
250
150
Junction temperature
Tj
Operating temperature range
Top
-55 ... 125
Storage temperature
Tstg
-55 ... 150
1
Unit
°C
2013-06-10
BAR90...
Thermal Resistance
Parameter
Symbol
Junction - soldering point1)
RthJS
Value
Unit
K/W
BAR90-02ELS
≤ 90
All others
≤ 65
Electrical Characteristics at TA = 25°C, unless otherwise specified
Symbol
Parameter
Values
Unit
min.
typ.
max.
80
-
-
V
-
-
50
nA
DC Characteristics
Breakdown voltage
V(BR)
I(BR) = 5 µA
Reverse current
IR
VR = 60 V
Forward voltage
V
VF
IF = 3 mA
IF = 100 mA
0.75
0.81
0.87
-
0.9
1
1For calculation of R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2
2013-06-10
BAR90...
Electrical Characteristics at T A = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
AC Characteristics
Diode capacitance
pF
CT
VR = 1 V, f = 1 MHz
-
0.25
0.35
VR = 0 V, f = 100 MHz
-
0.3
-
VR = 0 V, f = 1 GHz
-
0.19
-
VR = 0 V, f = 1.8 GHz
-
0.18
-
Reverse parallel resistance
kΩ
RP
VR = 0 V, f = 100 MHz
-
35
-
VR = 0 V, f = 1 GHz
-
5
-
VR = 0 V, f = 1.8 GHz
-
4
-
Forward resistance
Ω
rf
IF = 1 mA, f = 100 MHz
-
2
-
IF = 3 mA, f = 100 MHz
-
1.3
2.3
IF = 10 mA, f = 100 MHz
-
0.8
-
τ rr
-
750
-
ns
I-region width
WI
-
20
-
µm
Insertion loss1)
IL
Charge carrier life time
IF = 10 mA, IR = 6 mA, measured at IR = 3 mA,
RL = 100 Ω
dB
IF = 1 mA, f = 1.8 GHz
-
0.16
-
IF = 3 mA, f = 1.8 GHz
-
0.11
-
IF = 10 mA, f = 1.8 GHz
-
0.08
-
VR = 0 V, f = 0.9 GHz
-
18.5
-
VR = 0 V, f = 1.8 GHz
-
13.5
-
VR = 0 V, f = 2.45 GHz
-
11.5
-
Isolation1)
1BAR90-02EL
ISO
in series configuration, Z = 50 Ω
3
2013-06-10
BAR90...
Diode capacitance CT = ƒ (VR)
Reverse parallel resistance RP = ƒ(VR)
f = Parameter
f = Parameter
10 4
0.5
KOhm
pF
10 3
0.4
Rp
CT
100 MHz
0.35
1 GHz
1 MHz
100 MHz
1 GHz
1.8 GHz
0.3
0.25
10
2
10 1
0.2
1.8 GHz
10 0
0.15
0.1
0
2
4
6
8
10
12
14
16
V
10 -1
0
20
2
4
6
8
10
12
14
16
VR
V
20
VR
Forward resistance rf = ƒ (IF)
Forward current IF = ƒ (VF)
f = 100 MHz
TA = Parameter
10 1
10 -1
A
10 -2
rf
IF
Ohm
10 -3
10 0
10 -4
-40°C
+25 °C
+85 °C
+125 °C
10 -5
10 -1 -1
10
10
0
10
1
mA
10
10 -6
0.2
2
IF
0.4
0.6
0.8
V
1.2
VF
4
2013-06-10
BAR90...
Forward current IF = ƒ (TS )
Forward current IF = ƒ (TS )
BAR90-02EL / -098LRH
BAR90-02ELS
120
120
mA
100
100
90
90
80
80
IF
IF
mA
70
70
60
60
50
50
40
40
30
30
20
20
10
10
0
0
15
30
45
60
75
90 105 120 °C
0
0
150
15
30
45
60
90 105 120 °C
75
TS
150
TS
Permissible Puls Load RthJS = ƒ (t p)
Permissible Pulse Load
BAR90-02EL / -098LRH
IFmax/ IFDC =ƒ (tp) BAR90-02EL /-098LRH
10 2
10 2
10
IFmax/IFDC
RthJS
mA
1
10 0
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 -1 -7
-6
-5
-4
-3
-2
-1
10
10
10
10
10
10
10
mA
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
°C 10
10 0 -7
10
1
tp
10
-6
10
-5
10
-4
10
-3
10
-2
°C
10
0
tp
5
2013-06-10
BAR90...
Permissible Puls Load RthJS = ƒ (t p)
Permissible Pulse Load
BAR90-02ELS
IFmax/ IFDC = ƒ (t p)
BAR90-02ELS
IFmax/IFDC
10
RthJS
10 2
2
10 1
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
10 0
10 -1 -7
10
10
-6
10
-5
10
-4
10
-3
-
10 1
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
-2
s
10
10 0 -7
10
0
10
-6
10
-5
10
-4
10
-3
10
-2
tp
s
10
0
tp
Insertion loss IL = -|S21|2 = ƒ(f)
Isolation ISO = -|S21 |2 = ƒ(f)
IF = Parameter
VR = Parameter
BAR90-02EL in series configuration, Z = 50Ω
BAR90-02EL in series configuration, Z = 50Ω
0
0
dB
dB
|S21|²
|S21|²
-0.1
-0.15
-0.2
-0.25
-0.3
-10
-15
10mA
3mA
1mA
0.5mA
-20
0V
1V
10 V
-25
-0.35
-0.4
0
1
2
3
4
GHz
-30
0
6
f
1
2
3
4
GHz
6
f
6
2013-06-10
Package TSLP-2-19
7
BAR90...
2013-06-10
Package TSLP-4-7
BAR90...
Package Outline
Bottom view
0.8 ±0.05
4 x 0.25 ±0.035 1)
0.75 ±0.05
0.05 MAX.
3
2
4
1
2
3
1
1.2 ±0.05
0.39 +0.01
-0.03
4 x 0.35 ±0.035
1)
Top view
4
0.45 ±0.05
Pin 1 marking
1) Dimension applies to plated terminal
Foot Print
For board assembly information please refer to Infineon website "Packages"
0.8
0.4
0.38
0.42
1.18
0.4
1.2
0.4
0.38
0.78
0.28
0.3
0.28
0.3
0.22
0.2
Copper
Stencil apertures
Solder mask
Marking Layout (Example)
BAR90-07LRH
Type code
Pin 1 marking
Laser marking
Standard Packing
Reel ø180 mm = 15.000 Pieces/Reel
0.5
1.45
8
4
Pin 1
marking
1.05
8
2013-06-10
Package TSSLP-2-3
9
BAR90...
2013-06-10
BAR90...
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
10
2013-06-10
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