Rohm MMST3906 Pnp general purpose transistor Datasheet

UMT3906/SST3906/MMST3906
Transistors
PNP General Purpose Transistor
UMT3906 / SST3906 / MMST3906
zDimensions (Unit : mm)
zFeatures
1) BVCEO > −40V (IC= −1mA)
2) Complements the T3904/SST3904/MMST3909.
3) Low capacitance.
UMT3906
(1) Emitter
(2) Base
(3) Collector
ROHM : UMT3
EIAJ : SC-70
zPackage, marking, and packaging specifications
Type
UMT3906
Packaging type
UMT3
SST3
Marking
R2A
R2A
R2A
Code
T106
T116
T146
Basic ordering unit (pieces)
3000
3000
3000
SST3906
SST3906 MMST3906
SMT3
(1) Emitter
(2) Base
(3) Collector
ROHM : SST3
MMST3906
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
−40
V
Collector-emitter voltage
VCEO
−40
V
Emitter-base voltage
VEBO
−5
V
IO
−0.2
A
Collector current
UMT3906
SST3906,MMST3906
Collector Power
dissipation
Pd
SST3906,MMST3906
6.2
W
W
°C
°C
Junction temperature
Tj
0.35
150
Storage temperature
Tstg
−55 to +150
∗
5 0.6mm ceramic board.
+
+
∗ When mounted on a 7
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
BVCBO
−40
−
−
V
IC= −10µA
Collector-emitter breakdown voltage
BVCEO
−40
−
−
V
IC= −1mA
Emitter-base breakdown voltage
BVEBO
−5
−
−
V
IE= −10µA
Collector cutoff current
ICES
−
−
−50
nA
VCB= −30V
Emitter cutoff current
IEBO
−
−
−50
nA
−
−
−0.25
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
VBE(sat)
−
−
−0.4
−0.65
−
−0.85
−
−
−0.95
60
−
−
V
V
Conditions
VEB= −3V
IC/IB= −10mA/ −1mA
IC/IB= −50mA/ −5mA
IC/IB= −10mA/ −1mA
IC/IB= −50mA/ −5mA
VCE= −1V, IC= −0.1mA
80
−
−
100
−
300
60
−
−
30
−
−
fT
250
−
−
MHz
Collector output capacitance
Cob
−
−
4.5
pF
Emitter input capacitance
Cib
−
−
10
pF
VCB= −0.5V, f=100kHz, IC=0A
td
−
−
35
ns
VCC= −3V, VBE(OFF)= −0.5V,IC= −10mA, IB1= −1mA
VCC= −3V, VBE(OFF)= −0.5V,IC= −10mA, IB1= −1mA
DC current transfer ratio
Transition frequency
Delay time
Rise time
Storage tiem
Fall time
hFE
VCE= −1V, IC= −1mA
−
VCE= −1V, IC= −10mA
VCE= −1V, IC= −50mA
VCE= −1V, IC= −100mA
VCE= −20V, IE=10mA, f=100MHz
VCB= −10V, f=100kHz, IE=0A
tr
−
−
35
ns
tstg
−
−
225
ns
VCC= −3V, IC= −10mA, IB1= −IB2= −1mA
tf
−
−
75
ns
VCC= −3V, IC= −10mA, IB1= −IB2= −1mA
Rev.B
1/4
UMT3906/SST3906/MMST3906
Transistors
IC-COLLECTOR CURRENT (mA)
10
Ta=25°C
50
45
40
8
35
30
6
25
20
4
15
10
2
5
IB=0µA
10
0
0
20
VCE-COLLECTOR-EMITTER VOLTAGE (V)
VCE(sat)COLLECTOR EMITTER SATURATION VOLTAGE (V)
zElectrical characteristics curves
IC / IB=10
Ta=25°C
0.3
0.2
0.1
0
0.1
1.0
10
100
IC EMITTER COLLECTOR CURRENT (mA)
Fig.1 Grounded emitter output
characteristics
Fig.2 Collector-emitter saturation
voltage vs. collector current
500
hFE-DC CURRENT GAIN
Ta=25°C
VCE=5V
100
3V
1V
10
5
0.1
1.0
10
100
1000
IC-COLLECTOR CURRENT (mA)
Fig.3 DC current gain vs.collector current ( Ι )
500
hFE-DC CURRENT GAIN
VCE=5V
Ta=125°C
Ta=25°C
100
Ta= −55°C
10
5
0.1
1.0
10
100
1000
IC-COLLECTOR CURRENT (mA)
Fig.4 DC current gain vs. collector current ( ΙΙ )
Rev.B
2/4
UMT3906/SST3906/MMST3906
500
VBE(SAT)BASE EMITTER SATURATION VOLTAGE (V)
Transistors
hFE-AC CURRENT GAIN
Ta=25°C
VCE=5V
f=1kHz
100
10
5
0.01
0.1
1.0
IC-COLLECTOR CURRENT (mA)
10
100
1.8
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1
1.2
Ta=25°C
IC / IB=10
100
1.0
0.8
0.6
0.4
1000
tr-RISE TIME (ns)
1.4
1000
ton-TURN ON TIME (ns)
100
Ta=25°C
IC / =IB=10
100
15V
40V
VCC=3V
10
10
0.2
0
0.1
1
1.0
1.0
10
100
IC-COLLECTOR CURRENT (mA)
Fig.7 Grounded emitter propagation
characteristics
IC=101B1=101B2
Ta=25°C
40V
100
Fig.8 Turn-on time vs. collector
current
1000
15V
Fig.9
Rise time vs. collector
current
50
100
VCC=3V
10
100
IC-COLLECTOR CURRENT (mA)
f=1MHz
Ta=25°C
IC=101B1=101B2
Ta=25°C
tf-FALL TIME (ns)
tS-STORAGE TIME (ns)
1000
1
1.0
10
100
IC-COLLECTOR CURRENT (mA)
CAPACITANCE (pF)
VBE(ON)-BASE EMITTER ON VOLTAGE (V)
VCE=5V
Ta=25°C
1.6
1.0
10
IC-COLLECTOR CURRENT (mA)
Fig.6 Base-emitter saturation
voltage vs. collector current
Fig.5 AC current gain vs. collector current
1.8
IC / IB=10
Ta=25°C
1.6
10
Cib
Cob
1
10
1.0
10
100
IC-COLLECTOR CURRENT (mA)
Fig.10 Storage time vs. collector
current
10
1.0
10
100
IC-COLLECTOR CURRENT (mA)
Fig.11 Fall time vs. collector
current
0.5
0.1
1
10
REVERSE BIAS VOLTAGE (V)
Fig.12
100
Input / output capacitance
vs. voltage
Rev.B
3/4
UMT3906/SST3906/MMST3906
300MHz
1.0
200MHz
0.1
0.1
100MHz
1
10
100
IC-COLLECTOR CURRENT (mA)
100
1
NF-NOISE FIGURE (dB)
10
8
6
4
2
1k
f-FREQUENCY (Hz)
10k
VCB=25V
100n
10n
1n
0.1n
0
25
50
75
100
125 150
TA-AMBIENT TEMPERATURE (°C)
10k
NF
=1
B
B
2d
B
RS-SOURCE RESISTANCE (Ω)
Ta=25°C
VCE=5V
f=10Hz
8d
0.1
1
IC-COLLECTOR CURRENT (mA)
100k
3d
dB
B
100
0.01
100
B
5d
RS-SOURCE RESISTANCE (Ω)
B
Noise characteristics ( ΙΙ )
=1
1k
NF
=
5d 3dB
B
8d
B
B
Fig.18
10
NF
3d
8d
0.1
1
IC-COLLECTOR CURRENT (mA)
1k
B
5d
B
5d B
8d dB
12
100
0.01
Ta=25°C
VCE=5V
f=10kHz
8d
B
dB
dB
B
=1
3d
=1
NF
1k
10k
NF
dB
B
=1
Ta=25°C
VCE=5V
f=30Hz
12
dB
3d
NF
5d
B
10k
5d
RS-SOURCE RESISTANCE (Ω)
B
B
1
10
IC-COLLECTOR CURRENT (mA)
Fig.17 Noise characteristics ( Ι )
100k
8d
hre
1µ
100k
12
3d
hfe
1
10µ
Fig.16 Noise vs. collector current
dB
hoe
Fig.15 h parameter vs. collector current
Fig.14 Gain bandwidth product
vs. collector current
Ta=25°C
VCE=5V
IC=100µA
RS=10kΩ
100k
VCE=5V
f=270Hz
Ta=25°C
10
0.1
0.1
10
100
IC-COLLECTOR CURRENT (mA)
12
100
IC=1mA
hie=4.08kΩ
hfe=146
hre=2.20 10−4
hoe=34.3µS
hie
10
Fig.13 Gain bandwidth product
0
10
100
VCE=5V
Ta=25°C
h-PARAMETER NORMALIZED TO 1mA
400MHz
10
1000
ICBO-COLLECTOR CUTOFF CURRENT (A)
Ta=25°C
200MHz
100MHz
300MHz
+
VCE COLLECTOR-EMITTER VOLTAGE (V)
100
f T-CORRENT GAIN-BANDWIDTH PRODUCT (MHz)
Transistors
10
Fig.19 Noise characteristics (ΙΙΙ)
100
0.01
0.1
1
IC-COLLECTOR CURRENT (mA)
10
ΙΛ
Fig.20 Noise characteristics ( )
Rev.B
4/4
Appendix
Notes
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The contents described herein are subject to change without notice. The specifications for the
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that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
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ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
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It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
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range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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Appendix1-Rev2.0
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