Vishay MB4S-E3/45 Miniature glass passivated fast recovery surface mount bridge rectifier Datasheet

MB2S, MB4S, MB6S
www.vishay.com
Vishay General Semiconductor
Miniature Glass Passivated Fast Recovery
Surface Mount Bridge Rectifier
FEATURES
• UL recognition, file number E54214
~
• Saves space on printed circuit boards
~
• Ideal for automated placement
• High surge current capability
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
~
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
~
TO-269AA (MBS)
General purpose use in AC/DC bridge full wave rectification
for power supply, lighting ballaster, battery charger, home
appliances, office equipment, and telecommunication
applications.
MECHANICAL DATA
PRIMARY CHARACTERISTICS
Package
TO-269AA (MBS)
IF(AV)
0.5 A
VRRM
200 V, 400 V, 600 V
IFSM
35 A
IR
5 μA
VF at IF = 0.4 A
1.0 V
TJ max.
150 °C
Diode variations
Quad
Case: TO-269AA (MBS)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test
per
Polarity: As marked on body
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MB2S
2
4
6
Maximum repetitive peak reverse voltage
VRRM
200
400
600
V
Maximum RMS voltage
VRMS
140
280
420
V
VDC
200
400
600
V
Device marking code
Maximum DC blocking voltage
Maximum average forward output
rectified current (fig. 1)
on glass-epoxy PCB (1)
on aluminum substrate (2)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Rating for fusing (t < 8.3 ms)
Operating junction and storage temperature range
IF(AV)
MB4S
MB6S
UNIT
0.5
A
0.8
IFSM
35
A
I2t
5.0
A2s
TJ, TSTG
- 55 to + 150
°C
Notes
(1) On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads
(2) On aluminum substrate PCB with an area of 0.8" x 0.8" (20 mm x 20 mm) mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) solder pad
Revision: 19-Aug-13
Document Number: 88661
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MB2S, MB4S, MB6S
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward
voltage per diode
IF = 0.4 A
Maximum DC reverse current at rated DC blocking
voltage per diode
TA = 125 °C
Typical junction capacitance per diode
4.0 V, 1 MHz
SYMBOL
MB2S
MB4S
VF
TA = 25 °C
MB6S
UNIT
1.0
V
5.0
IR
μA
100
13
CJ
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MB4S
85
RJA (2)
70
RJL (1)
20
RJA
Typical thermal resistance
MB2S
(1)
MB6S
UNIT
°C/W
Notes
(1) On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads
(2) On aluminum substrate PCB with an area of 0.8" x 0.8" (20 mm x 20 mm) mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) solder pad
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
MB2S-E3/45
0.22
45
100
Tube
MB2S-E3/80
0.22
80
3000
13" diameter paper tape and reel

RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
35
TA = 40 °C
Single Half Sine-Wave
Aluminum Substrate
0.7
Peak Forward Surge Current (A)
Average Forward Rectified Current (A)
0.8
0.6
0.5
Glass
Epoxy
PCB
0.4
0.3
0.2
Resistive or Inductive Load
0.1
30
25
20
f = 50 Hz
f = 60 Hz
15
10
5
1.0 Cycle
0
0
0
20
40
60
80
100
120
140
160
1
10
100
Ambient Temperature (°C)
Number of Cycles
Fig. 1 - Derating Curve for Output Rectified Current
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Revision: 19-Aug-13
Document Number: 88661
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MB2S, MB4S, MB6S
www.vishay.com
Vishay General Semiconductor
30
Junction Capacitance (pF)
Instantaneous Forward Current (A)
10
TJ = 150 °C
TJ = 25 °C
1
0.1
Pulse Width = 300 µs
1 % Duty Cycle
0.01
0.3
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
25
20
15
10
5
0
0.5
0.7
1.5
1.3
1.1
0.9
0.1
10
1
1000
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Forward Voltage Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Instantaneous Reverse Leakage
Current (µA)
100
TJ = 125 °C
10
1
0.1
TJ = 25 °C
0.01
0
20
40
80
60
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-269AA (MBS)
0.029 (0.74)
0.017 (0.43)
Mounting Pad Layout
0.023 MIN.
(0.58 MIN.)
0.161 (4.10)
0.144 (3.65)
0.272 (6.90)
0.252 (6.40)
0.272 MAX.
(6.91 MAX.)
0.030 MIN.
(0.76 MIN.)
0.105 (2.67)
0.095 (2.41)
0.195 (4.95)
0.179 (4.55)
0 to 8°
0.205 (5.21)
0.195 (4.95)
0.049 (1.24)
0.039 (0.99)
0.062 (1.57)
0.058 (1.47)
0.106 (2.70)
0.090 (2.30)
0.114 (2.90)
0.094 (2.40)
Revision: 19-Aug-13
0.0075 (0.19)
0.0065 (0.16)
0.038 (0.96)
0.019 (0.48)
0.008 (0.20)
0.004 (0.10)
0.114 (2.90)
0.110 (2.80)
0.058 (1.47)
0.054 (1.37)
0.105 (2.67)
0.095 (2.41)
0.016 (0.41)
0.006 (0.15)
0.018 (0.46)
0.014 (0.36)
Document Number: 88661
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000