AO4616 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4616 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications.Standard Product AO4616 is Pb-free (meets ROHS & Sony 259 specifications). AO4616L is a Green Product ordering option. AO4616 and AO4616L are electrically identical. n-channel VDS (V) = 30V ID = 8.1A (VGS=10V) RDS(ON) < 20mΩ (VGS=10V) < 28mΩ (VGS=4.5V) S2 G2 S1 G1 1 2 3 4 8 7 6 5 p-channel -30V -7.1A (VGS = -10V) RDS(ON) < 25mΩ (VGS = -10V) < 40mΩ (VGS = -4.5V) D2 D2 D2 D1 D1 D1 G2 SOIC-8 G1 S2 S1 n-channel p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 Continuous Drain TA=25°C 8.1 Current A TA=70°C ID 6.5 B Pulsed Drain Current IDM 30 TA=25°C TA=70°C Power Dissipation Junction and Storage Temperature Range PD TJ, TSTG Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-AmbientA A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead t ≤ 10s Maximum Junction-to-AmbientA A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead Alpha & Omega Semiconductor, Ltd. Max p-channel -30 ±20 -7.1 -5.6 -30 A 2 2 1.28 -55 to 150 1.28 -55 to 150 Symbol RθJA RθJL RθJA RθJL Device n-ch n-ch n-ch p-ch p-ch p-ch Typ 48 74 35 48 74 35 Units V V Max 62.5 110 60 62.5 110 40 W °C Units °C/W °C/W °C/W °C/W °C/W °C/W AO4616 N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 30 RDS(ON) Static Drain-Source On-Resistance TJ=55°C 5 VGS=10V, ID=8.1A TJ=125°C VGS=4.5V, ID=6A Forward Transconductance VDS=5V, ID=8.1A VSD Body-Diode Forward Voltage Maximum Body-Diode Continuous Current IS=1A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge 1.8 VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=8.1A µA 100 nA 3 V A 16.4 20 20 25 23.4 28 mΩ 1 V 3 A 1250 pF 23 0.75 1040 VGS=0V, VDS=15V, f=1MHz Units V 1 Zero Gate Voltage Drain Current gFS Max 30 VDS=24V, VGS=0V IDSS IS Typ mΩ S 180 pF 110 pF 0.7 Ω 19.2 nC 9.36 nC 2.6 nC Qgs Gate Source Charge Qgd Gate Drain Charge 4.2 nC tD(on) Turn-On DelayTime 5.2 ns tr Turn-On Rise Time 4.4 ns tD(off) Turn-Off DelayTime 17.3 ns tf Turn-Off Fall Time trr Qrr VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω 3.3 ns Body-Diode Reverse Recovery Time IF=8.1A, dI/dt=100A/µs 16.7 21 Body-Diode Reverse Recovery Charge IF=8.1A, dI/dt=100A/µs 6.7 10 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev 0 : July 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha Omega Semiconductor, Ltd. AO4616 N-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 2.00E+01 4V 10V 25 20 3.5V 1.20E+01 ID(A) ID (A) VDS=5V 1.60E+01 4.5V 15 125°C 8.00E+00 10 25°C VGS=3V 4.00E+00 5 0 0.00E+00 0 1 2 3 4 5 1.5 VDS (Volts) Fig 1: On-Region Characteristics 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 28 1.6 Normalized On-Resistance 26 VGS=4.5V 24 RDS(ON) (mΩ) 2 22 20 18 VGS=10V 16 VGS=10V ID=8.1A 2 1.4 24 VGS=4.5V ID=6A 1.2 1 14 0 5 10 15 0.8 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 50 ID=8.1A 1.0E+00 1.0E-01 IS (A) RDS(ON) (mΩ) 40 30 125°C 1.0E-02 125°C 25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 1.0E-03 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF 20 SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 25°C 1.0E-04 FUNCTIONS AND RELIABILITY WITHOUT NOTICE 1.0E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4616 N-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1500 10 VDS=15V ID=8.1A 1250 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 1000 750 500 Coss 250 0 Crss 0 0 4 8 12 16 20 0 5 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 24 10ms 0.1s 1.0 1s TJ(Max)=150°C TA=25°C DC 20 0 0.001 0.1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) D=T on/T TJ,PK=T A+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) ZθJA Normalized Transient Thermal Resistance 30 10 10s 1 TJ(Max)=150°C 2 TA=25°C 40 10µs Power (W) ID (Amps) 100µs 1ms 10.0 10 30 50 RDS(ON) limited 0.1 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS NOT ASSUME ANY LIABILITY ARISING 0.1 IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 AO4616 P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -30 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.4 ID(ON) On state drain current VGS=-10V, VDS=-5V 30 RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current TJ=55°C VGS=-10V, ID=-7.1A TJ=125°C VGS=-4.5V, ID=-5.6A VDS=-5V, ID=-7.1A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time Max VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-7.1A VGS=-10V, VDS=-15V, RL=2.2Ω, RGEN=3Ω Units V VDS=-24V, VGS=0V IDSS IS Typ -5 -2 µA ±100 nA -2.7 V A 20 25 27 33 29 40 19.6 -0.7 mΩ mΩ S -1 V -4.2 A 1573 pF 319 pF 211 pF 6.7 Ω 30.9 nC 16.1 nC 8 nC 4.4 nC 9.5 ns 8 ns 44.2 ns 22.2 ns trr Body Diode Reverse Recovery Time IF=-7.1A, dI/dt=100A/µs 25.5 Qrr Body Diode Reverse Recovery Charge IF=-7.1A, dI/dt=100A/µs 14.7 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The The value value in any in given any a application given application depends depends on the on user's the user's specificspecific board board design.design. The current The current rating is rating based is based on the on t the ≤ 10s t thermal ≤ 10s thermal resistance rating. resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev 0 : July 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha Omega Semiconductor, Ltd. AO4616 P-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 30 -10V -5V VDS=-5V 25 25 -4V 20 -ID(A) -ID (A) 20 15 -3.5V 10 125°C 10 VGS=-3V 5 15 5 0 25°C 0 0 1 2 3 4 5 1 1.5 40 2.5 3 3.5 4 4.5 5 Normalized On-Resistance 1.60 35 RDS(ON) (mΩ) 2 -VGS(Volts) Figure 17: Transfer Characteristics -VDS (Volts) Fig 16: On-Region Characteristics VGS=-4.5V 30 25 VGS=-10V 20 15 ID=-7.1A 1.40 VGS=-10V 1.20 VGS=-4.5V ID=-5.6A 1.00 0.80 10 0 5 10 15 20 0 25 25 50 75 100 125 150 175 Temperature (°C) Figure 19: On-Resistance vs. Junction Temperature -ID (A) Figure 18: On-Resistance vs. Drain Current and Gate Voltage 60 1.0E+01 1.0E+00 ID=-7.1A 50 125°C 40 -IS (A) RDS(ON) (mΩ) 1.0E-01 125°C 1.0E-02 1.0E-03 30 1.0E-04 20 25°C 1.0E-05 25°C 1.0E-06 10 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 20: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 -VSD (Volts) Figure 21: Body-Diode Characteristics 1.0 AO4616 P-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2250 10 VDS=-15V ID=-7.1A 2000 Ciss 1750 Capacitance (pF) -VGS (Volts) 8 6 4 1500 1250 1000 Coss 750 Crss 500 2 250 0 0 0 4 8 12 16 20 24 28 32 0 -Qg (nC) Figure 22: Gate-Charge Characteristics 10µs 100µs 25 30 0.1s 30 Power (W) -ID (Amps) 20 TJ(Max)=150°C TA=25°C RDS(ON) limited 1ms 10ms 1s 20 10 10s DC 0 0.001 0.1 0.1 15 40 TJ(Max)=150°C, TA=25°C 1.0 10 -VDS (Volts) Figure 23: Capacitance Characteristics 100.0 10.0 5 1 10 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 25: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) Figure 24: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 26: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000